1460913487-b8fd45ef-4c00-4648-8037-6f1eaa52b6e2

1. A method for manufacturing a semiconductor device, the method comprising:
forming a metal-containing layer over a semiconductor substrate;
forming an insulating film so as to cover the semiconductor substrate and the metal-containing layer;
forming a first contact hole that penetrates through the insulating film to reach the semiconductor substrate;
forming a second contact hole that penetrates through the insulating film to reach the metal-containing layer;
forming a first conductive plug on a portion, exposed through the first contact hole, of the semiconductor substrate, the first conductive plug including a first material;
forming a second conductive plug on the first conductive plug, the second conductive plug including a second material different from the first material, the semiconductor substrate being closer to a lower surface of the second conductive plug than to an upper surface of the metal-containing layer; and
forming a third conductive plug on a portion, exposed through the second contact hole, of the metal-containing layer, the third conductive plug including a third material.
2. The method of claim 1, wherein
the forming the first contact hole includes substantially the same process as the forming the second contact hole includes.
3. The method of claim 1, wherein
the forming the second conductive plug includes substantially the same process as the forming the third conductive plug includes.
4. The method of claim 1, wherein
the forming the first contact hole includes substantially the same process as the forming the second contact hole includes; and
the forming the second conductive plug includes substantially the same process as the forming the third conductive plug includes.
5. The method of claim 1, wherein
the second material is the same as the third material.
6. The method of claim 5, wherein
the metal-containing layer includes at least one of metal silicide, tungsten, and copper,
the first material is silicon, and
the second material is tungsten.
7. The method of claim 1, wherein
the metal-containing layer includes at least one of metal silicide, tungsten, and copper,
the forming the first conductive plug includes
forming an amorphous silicon film, and
thereafter etching the amorphous silicon film to a position where an upper surface of the amorphous silicon film is lower than the upper surface of the metal-containing layer, and

the forming the second conductive plug includes
forming a barrier metal layer including titanium, titanium nitride, or a lamination film of respective films made of titanium and titanium nitride, and
thereafter forming a metal layer having tungsten.
8. The method of claim 7, wherein
the forming the first contact hole includes substantially the same process as the forming the second contact hole includes; and
the forming the second conductive plug includes substantially the same process as the forming the third conductive plug includes.
9. The method of claim 1, further comprising:
after the forming the first conductive plug and before the forming the second conductive plug, introducing at least one of boron, phosphorus, and arsenic by implantation into the first conductive plug.
10. The method of claim 1, further comprising:
after the forming the second contact hole and before the forming the first conductive plug, forming a trench having a wiring pattern shape in an upper portion of at least one of the first contact hole and the second contact hole.
11. The method of claim 1, further comprising:
after the forming the first contact hole and before the forming the first conductive plug, forming a metal silicide layer at a lower portion of the first contact hole.
12. A semiconductor device comprising:
a semiconductor substrate;
an impurity diffusion layer provided in the semiconductor substrate;
a metal-containing layer provided above the semiconductor substrate;
an insulating film configured to cover the semiconductor substrate and the metal-containing layer;
a first contact hole configured to penetrate through the insulating film to reach the impurity diffusion layer;
a first conductive plug provided in a lower portion of the first contact hole, the first conductive plug containing a first material;
a second conductive plug provided above the first conductive plug in the first contact hole, the second conductive plug having a lower surface, the semiconductor substrate being closer to the lower surface of the second conductive plug than to an upper surface of the metal-containing layer, the second conductive plug containing a second material different from the first material;
a second contact hole configured to penetrate through the insulating film to reach the metal-containing layer; and
a third conductive plug provided in the second contact hole, the third conductive plug containing a third material.
13. The semiconductor device of claim 12 wherein
the second material is the same as the third material.
14. The semiconductor device of claim 13, wherein
the first material is silicon, and
the second material and the third material are tungsten.
15. The semiconductor device of claim 12, wherein
the second conductive plug includes
a first barrier metal layer including at least one of titanium and titanium nitride, and
a first metal layer including tungsten, and

the third conductive plug includes
a second barrier metal layer including at least one of titanium and titanium nitride, and
a second metal layer including tungsten.
16. The semiconductor device of claim 15, wherein
the metal-containing layer includes at least one of metal silicide, tungsten, and copper,
the first conductive plug includes silicon;
17. The semiconductor device of claim 16, wherein
the first conductive plug including at least one of boron, phosphorus and arsenic.
18. The semiconductor device of claim 16, further comprising:
a metal silicide layer provided between the first conductive plug and the semiconductor substrate.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1-22. (canceled)
23. A method for delivering a biological tissue adhesive for injection in a human body, comprising:
providing a fibrinogen component, a thrombin component, and a corticosteroid-containing solution to form a system for delivering a biological tissue adhesive.
24. The method of claim 23, wherein the system further comprises a calcium chloride solution.
25. The method of claim 23, wherein the thrombin and the corticosteroid-containing solution are in a single vial.
26. The method of claim 23, wherein the thrombin is in one vial and the corticosteroid-containing solution is in a second vial.
27. The method of claim 23, wherein the system further comprises a Y connector.
28. The method of claim 23, wherein the system further comprises a dual-syringe.
29. The method of claim 23, wherein the system further comprises at least one curved spinal needle.
30. The method of claim 23, wherein the system further comprises a contrast agent component.
31. The method of claim 23, wherein the corticosteroid is betamethasone.
32. The method of claim 23, wherein the corticosteroid is triamicinalone.
33. The method of claim 23, wherein the corticosteroid is methylprednisolone.
34. The method of claim 23, wherein the corticosteroid is betamethasone acetate.
35. The method of claim 23, wherein the corticosteroid is betamethasone sodium phosphate.
36. The method of claim 23, wherein the fibrinogen component is in the freeze dried state.
37. The method of claim 23, wherein the thrombin is in the freeze dried state.
38. The method of claim 23, wherein the system further comprises an anti-caking component.
39. The method of claim 23, wherein the system further comprises a polysorbate anti-caking component.
40. The method of claim 23, wherein the system further comprises at least one additional component selected from the group consisting of an antibiotic, an antiproliferativecytotoxic drug, an antiviral, a cytokine, a colony stimulating factor, erythropoietin, an antifungal, an antiparasitic agent, an anti-inflammatory agent, a steroid, an anesthetic, an analgesic, an oncology agent, a hormone, a glycoprotein, fibronectin, a peptide, a protein, a carbohydrate, a protoglycan, an antiangiogenin, an antigen, an oligonucleotide, a BMP, a DBM, an antibody, a gene therapy reagent, a cell, a stem cell, a cell growth factor, an oxygen-containing component, an enzyme, a nutrient, or a growth factor.
41. The method of claim 23, wherein the fibrinogen component is removed from the human body of claim 23.
42. The method of claim 23, wherein the fibrinogen is derived from frozen fibrinogen.
43. A method for delivering a biological tissue adhesive for injection in a human body, comprising:
providing a freeze-dried fibrinogen component, a freeze-dried thrombin component, and a corticosteroid-containing solution to form a system for delivering a biological tissue adhesive.
44. The method of claim 43, wherein the system further comprises a calcium chloride solution.
45. The method of claim 43, wherein the thrombin is in one vial and the corticosteroid-containing solution is in a second vial.
46. The method of claim 43, wherein the system further comprises a Y connector.
47. The method of claim 43, wherein the system further comprises a dual-syringe.
48. The method of claim 43, wherein the system further comprises at least one curved spinal needle.
49. The method of claim 43, wherein the system further comprises a contrast agent component.
50. The method of claim 43, wherein the corticosteroid is betamethasone.
51. The method of claim 43, wherein the corticosteroid is triamicinalone.
52. The method of claim 43, wherein the corticosteroid is methylprednisolone.
53. The method of claim 43, wherein the corticosteroid is betamethasone acetate.
54. The method of claim 43, wherein the corticosteroid is betamethasone sodium phosphate.
55. The method of claim 43, wherein the system further comprises an anti-caking component.
56. The method of claim 43, wherein the system further comprises a polysorbate anti-caking component.
57. The method of claim 43, wherein the system further comprises at least one additional component selected from the group consisting of an antibiotic, an antiproliferativecytotoxic drug, an antiviral, a cytokine, a colony stimulating factor, erythropoietin, an antifungal, an antiparasitic agent, an anti-inflammatory agent, a steroid, an anesthetic, an analgesic, an oncology agent, a hormone, a glycoprotein, fibronectin, a peptide, a protein, a carbohydrate, a protoglycan, an antiangiogenin, an antigen, an oligonucleotide, a BMP, a DBM, an antibody, a gene therapy reagent, a cell, a stem cell, a cell growth factor, an oxygen-containing component, an enzyme, a nutrient, or a growth factor.
58. A method for delivering a biological tissue adhesive for injection in a human body, comprising:
providing a spinal needle, a dual syringe, a freeze-dried fibrinogen component, a freeze-dried thrombin component, and a betamethasone-containing solution to form a system for delivering a biological tissue adhesive.
59. The method of claim 58, wherein the system further comprises a calcium chloride solution.
60. The method of claim 58, wherein the thrombin is in one vial and the corticosteroid-containing solution is in a second vial.
61. The method of claim 58, wherein the spinal needle is curved.
62. The method of claim 58, wherein the system further comprises a contrast agent component.
63. The method of claim 58, wherein the system further comprises an anti-caking component.
64. The method of claim 58, wherein the system further comprises a polysorbate anti-caking component.
65. The method of claim 58, wherein the system further comprises at least one additional component selected from the group consisting of an antibiotic, an antiproliferativecytotoxic drug, an antiviral, a cytokine, a colony stimulating factor, erythropoietin, an antifungal, an antiparasitic agent, an anti-inflammatory agent, a steroid, an anesthetic, an analgesic, an oncology agent, a hormone, a glycoprotein, fibronectin, a peptide, a protein, a carbohydrate, a protoglycan, an antiangiogenin, an antigen, an oligonucleotide, a BMP, a DBM, an antibody, a gene therapy reagent, a cell, a stem cell, a cell growth factor, an oxygen-containing component, an enzyme, a nutrient, or a growth factor.
66. The method of claim 58, wherein the betamethasone is betamethasone acetate.
67. The method of claim 58, wherein the betamethasone is betamethasone sodium phosphate.