We claim:
1. A production method, which comprises:
providing a monocrystalline silicon substrate having a silicon surface;
forming a cavity in the silicon substrate and covering walls of the cavity with a cover layer at least in an upper end region of the cavity;
depositing a covering layer on the silicon substrate with a selective epitaxial process; and
thereby growing the covering layer substantially only on the silicon surface to cover the cavity with the covering layer and to form a covered cavity in the monocrystalline silicon substrate.
2. The method according to claim 1, wherein the cover layer is spaced from the surface of the silicon substrate by a predetermined width.
3. The method according to claim 1, wherein the cover layer is a silicon dioxide layer.
4. The method according to claim 1, which comprises spacing the cover layer from the silicon surface by:
filling the cavity with a stop layer;
subsequently selectively wet-etching to remove the cover layer from an upper edge area of the walls of the cavity; and
etching the stop layer out of the cavity.
5. The method according to claim 4, which comprises using an exposure lacquer as the stop layer.
6. The method according to claim 5, which comprises removing the exposure lacquer from the upper edge area of the wall by plasma etching after the cover layer has been etched away.
7. The method according to claim 1, wherein the cavity is a trench, and a doping layer is incorporated in the silicon substrate adjoining the trench, the doping layer representing a first electrode of a trench capacitor, and the method further comprising:
removing the covering layer;
at least partially covering the wall of the trench with a dielectric layer and at least partially covering the dielectric layer with an electrically conductive layer to form a second electrode of the trench capacitor.
8. The method according to claim 7, which comprises forming a memory cell with the trench capacitor, and incorporating components of a memory module into the silicon substrate.
9. The method according to claim 8, which comprises forming a DRAM memory module.
10. The method according to claim 7, which comprises forming a memory cell with the trench capacitor, and applying components of a memory module on the silicon substrate.
11. The method according to claim 10, which comprises forming a DRAM memory module.
12. A semiconductor component, comprising:
a monocrystalline silicon substrate having a cavity with a wall formed therein;
a cover layer covering the wall of the cavity at least in an upper edge area thereof; and
an epitaxial layer covering said cavity, said epitaxial layer projecting to a predetermined depth into said cavity.
13. The semiconductor component according to claim 12, wherein said epitaxial layer is a silicon layer, and said cover layer is a silicon dioxide layer.
14. The semiconductor component according to claim 12, wherein said epitaxial layer is grown on a predetermined edge area on the wall of said cavity.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A cross for a universal joint comprising:
a block having an interior, a first pair of openings, and a second pair of openings;
an inner cross disposed within said interior of said block, said inner cross having a first bore that is aligned with said first pair of openings in said block and a second bore that is aligned with said second pair of openings in said block;
a pair of first cross member components, each of said first cross member components extending through one of said first pair of openings of said block into engagement with said first bore of said inner cross; and
a second cross member extending through said second pair of openings of said block and through said second bore of said inner cross.
2. The cross defined in claim 1 wherein said first bore of said inner cross is threaded, and wherein said pair of first cross member components extends into threaded engagement with said threaded first bore of said inner cross.
3. The cross defined in claim 2 wherein said pair of first cross member components is a pair of bolts.
4. The cross defined in claim 1 wherein said second cross member is a bolt.
5. The cross defined in claim 1 further including a pair of thrust bearings that are respectively disposed in said first pair of openings of said block and engage said inner cross.
6. The cross defined in claim 1 further including a pair of thrust bearings that are respectively disposed in said second pair of openings of said block and engage a sleeve extending therebetween.
7. The cross defined in claim 1 further including a first pair of thrust bearings that are respectively disposed in said first pair of openings of said block and engage said inner cross and a second pair of thrust bearings that are respectively disposed in said second pair of openings of said block and engage a sleeve extending therebetween.
8. The cross defined in claim 7 wherein said first bore of said inner cross is threaded, and wherein said pair of first cross member components extends into threaded engagement with said threaded first bore of said inner cross.
9. The cross defined in claim 8 wherein said pair of first cross member components is a pair of bolts.
10. The cross defined in claim 7 wherein said second cross member is a bolt.
11. A universal joint comprising:
a first yoke;
a second yoke; and
a cross connecting said first and second yokes, said cross including: a block having an interior, a first pair of openings, and a second pair of openings; an inner cross disposed within said interior of said block, said inner cross having a first bore that is aligned with said first pair of openings in said block and a second bore that is aligned with said second pair of openings in said block; a pair of first cross member components connected to said first yoke, each of said first cross member components extending through one of said first pair of openings of said block into engagement with said first bore of said inner cross; and a second cross member connected to said second yoke and extending through said second pair of openings of said block and through said second bore of said inner cross.
12. The universal joint defined in claim 11 wherein said first bore of said inner cross is threaded, and wherein said pair of first cross member components extends into threaded engagement with said threaded first bore of said inner cross.
13. The universal joint defined in claim 12 wherein said pair of first cross member components is a pair of bolts.
14. The universal joint defined in claim 11 wherein said second cross member is a bolt.
15. The universal joint defined in claim 11 further including a pair of thrust bearings that are respectively disposed in said first pair of openings of said block and engage said inner cross.
16. The universal joint defined in claim 11 further including a pair of thrust bearings that are respectively disposed in said second pair of openings of said block and engage a sleeve extending therebetween.
17. The universal joint defined in claim 11 further including a first pair of thrust bearings that are respectively disposed in said first pair of openings of said block and engage said inner cross and a second pair of thrust bearings that are respectively disposed in said second pair of openings of said block and engage a sleeve extending therebetween.
18. The universal joint defined in claim 17 wherein said first bore of said inner cross is threaded, and wherein said pair of first cross member components extends into threaded engagement with said threaded first bore of said inner cross.
19. The universal joint defined in claim 18 wherein said pair of first cross member components is a pair of bolts.
20. The universal joint defined in claim 17 wherein said second cross member is a bolt.