1. A power supply control device comprising:
a DC power supply;
a relay provided between one electrode of said DC power supply and a load device;
a semiconductor switching element connected in parallel to said relay; and
a control unit performing precharge processing for supplying electric charges from said DC power supply to said load device through said semiconductor switching element before turn-on of said relay; and
said control unit being configured to control a control voltage of said semiconductor switching element during said precharge processing such that power loss of said semiconductor switching element does not exceed maximum rated power of said semiconductor switching element.
2. The power supply control device according to claim 1, wherein
said semiconductor switching element is implemented by a field-effect transistor, and
said control unit controls a gate voltage of said field-effect transistor such that said field-effect transistor operates in a saturation region.
3. The power supply control device according to claim 1, wherein
said semiconductor switching element is implemented by a bipolar transistor, and
said control unit controls a base voltage of said bipolar transistor such that said bipolar transistor operates in an active region.
4. A power supply control device comprising:
a DC power supply;
a relay provided between one electrode of said DC power supply and a load device;
a semiconductor switching element connected in parallel to said relay;
a control unit performing precharge processing for supplying electric charges from said DC power supply to said load device through said semiconductor switching element before turn-on of said relay; and
a temperature detection unit detecting a temperature of said semiconductor switching element; and
said control unit being configured to decrease an amount of current flow in said semiconductor switching element as the temperature of said semiconductor switching element is higher during said precharge processing by controlling a control voltage of said semiconductor switching element.
5. A power supply control device comprising:
a DC power supply;
a relay provided between one electrode of said DC power supply and a load device;
a semiconductor switching element connected in parallel to said relay;
a control unit performing precharge processing for supplying charges from said DC power supply to said load device through said semiconductor switching element before turn-on of said relay; and
a temperature detection unit detecting a temperature of said semiconductor switching element; and
said control unit being configured to subject said semiconductor switching element to switching control during said precharge processing when the temperature of said semiconductor switching element is raised.
6. The power supply control device according to claim 5, wherein
said control unit lowers on-duty of said semiconductor switching element during said precharge processing, with increase in the temperature of said semiconductor switching element.
7. A precharge processing method of performing precharge from a power supply device to a load device, said power supply device including a DC power supply, a relay provided between one electrode of said DC power supply and said load device, and a semiconductor switching element connected in parallel to said relay, comprising:
the first step of calculating a control voltage of said semiconductor switching element such that power loss of said semiconductor switching element does not exceed maximum rated power of said semiconductor switching element;
the second step of outputting the calculated control voltage to a control electrode of said semiconductor switching element;
the third step of determining whether said precharge performed through said semiconductor switching element is completed; and
the fourth step of turning on said relay when it is determined that said precharge is completed.
8. The precharge processing method according to claim 7, wherein
said semiconductor switching element is implemented by a field-effect transistor, and
in said first step, a gate voltage of said field-effect transistor is calculated such that said field-effect transistor operates in a saturation region.
9. The precharge processing method according to claim 7, wherein
said semiconductor switching element is implemented by a bipolar transistor, and
in said first step, a base voltage of said bipolar transistor is calculated such that said bipolar transistor operates in an active region.
10. A precharge processing method of performing precharge from a power supply device to a load device, said power supply device including a DC power supply, a relay provided between one electrode of said DC power supply and said load device, a semiconductor switching element connected in parallel to said relay, and a temperature detection unit detecting a temperature of said semiconductor switching element, comprising:
the first step of obtaining a detected temperature from said temperature detection unit;
the second step of calculating a control voltage of said semiconductor switching element such that an amount of current flow in said semiconductor switching element is decreased with increase in the obtained detected temperature;
the third step of outputting the calculated control voltage to a control electrode of said semiconductor switching element;
the fourth step of determining whether said precharge performed through said semiconductor switching element is completed; and
the fifth step of turning on said relay when it is determined that said precharge is completed.
11. A precharge processing method of performing precharge from a power supply device to a load device, said power supply device including a DC power supply, a relay provided between one electrode of said DC power supply and said load device, a semiconductor switching element connected in parallel to said relay, and a temperature detection unit detecting a temperature of said semiconductor switching element, comprising:
the first step of obtaining a detected temperature from said temperature detection unit;
the second step of subjecting said semiconductor switching element to switching control when the obtained detected temperature is raised;
the third step of determining whether said precharge performed through said semiconductor switching element is completed; and
the fourth step of turning on said relay when it is determined that said precharge is completed.
12. The precharge processing method according to claim 11, wherein
in said second step, said semiconductor switching element is subjected to switching control such that on-duty of said semiconductor switching element is lowered with increase in said detected temperature.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An aircraft with a hybrid power supply, the aircraft comprising:
an external structure (12 to 20);
electrical equipment (34);
internal combustion propulsion means (40); and
means for feeding energy to the propulsion means;
the aircraft being characterized in that it further comprises:
a plurality of converters (22 to 30) for directly converting light energy into electrical energy, which converters are disposed on at least a fraction of the outside surface of the external structure;
means (32) for comparing the electrical energy produced by said converters with the instantaneous consumption of said electrical equipment (34);
means (36) for recovering the excess electrical energy, if any; and
means (38, 46, 50) for delivering to said propulsion means (40) additional energy taken from said excess electrical energy, if any.
2. An aircraft according to claim 1, characterized in that the means for delivering the additional energy comprise at least one electric motor (38) powered by said excess electrical energy if any, said electric motor co-operating with said propulsion means (40).
3. An aircraft according to claim 2, characterized in that said electric motor (38) is the starter of the propulsion means.
4. An aircraft according to claim 1, characterized in that said means for delivering additional energy comprise:
a hydrogen-production assembly (44) for producing hydrogen from water, said hydrogen-production assembly being fed with said excess electrical energy, if any; and
means (46, 50) for delivering the hydrogen to the heat energy production means.
5. An aircraft according to claim 4, characterized in that it comprises:
means (52) for condensing at least some of the exhaust gas from the propulsion means (40);
means (60) for recovering liquid water from the condensate produced; and
means (64) for feeding the hydrogen production assembly with the water obtained in this way.
6. An aircraft according to claim 5, characterized in that said heat energy production means include a few regulator circuits (50), the hydrogen produced by the hydrogen production means (44, 46) being injected into said combustion chamber.