1. An air cooled brushless wind alternator comprising:
a propeller blade and a shaft;
said propeller blade fixedly attached to said shaft, and
a hoop having a periphery;
said hoop being fixedly attached to said shaft, and
said periphery of said hoop having permanent magnets fixedly attached, and a base;
said base having at least one bearing for rotatably supporting said shaft, and electromagnets;
said electromagnets being fixedly attached to said base in magnetic coupling proximity to said permanent magnets attached to said periphery of said hoop.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for fabricating a metal-insulator-metal capacitor (MIMCAP) comprising the steps of:
providing a first inter-level dielectric (ILD) layer over an isolation region;
forming a MIMCAP pattern in said first ILD layer over said isolation region;
depositing a first conformal conductive liner over said MIMCAP pattern and said first ILD layer;
depositing an insulator over said first conformal conductive liner;
forming a contact pattern through said conformal conductive liner, said insulator and said first inter-level dielectric (ILD) layer;
depositing a second conformal conductive liner over said MIMCAP pattern, said contact pattern and said first ILD layer; and
depositing a conductive stud over said second conformal conductive liner in said MIMCAP pattern and said contact pattern.
2. A method for fabricating a metal-insulator-metal capacitor as recited in claim 1 includes forming a first level metal layer on said conductive stud in said MIMCAP pattern and said contact pattern.
3. A method for fabricating a metal-insulator-metal capacitor as recited in claim 2 wherein forming said first level metal layer includes a damascene line wire level process including depositing a second inter-level dielectric (ILD) layer.
4. A method for fabricating a metal-insulator-metal capacitor as recited in claim 1 includes providing an initial structure defining said isolation region; said initial structure including a substrate, and a buried oxide layer; and forming shallow trench isolation (STI) regions to pattern SOI regions on said buried oxide layer; and converting said SOI regions to salicide (self-aligned silicide) regions.
5. A method for fabricating a metal-insulator-metal capacitor as recited in claim 4 wherein converting said SOI regions to salicide (self-aligned silicide) includes deposition of metal, thermal reaction, and selective etching.
6. A method for fabricating a metal-insulator-metal capacitor as recited in claim 4 includes forming a barrier layer over said STI regions and said salicide regions.
7. A method for fabricating a metal-insulator-metal capacitor as recited in claim 6 wherein forming said barrier layer includes depositing SiN using chemical vapor deposition (CVD).
8. A method for fabricating a metal-insulator-metal capacitor as recited in claim 1 wherein providing said first inter-level dielectric (ILD) layer includes depositing said first inter-level dielectric (ILD) layer using chemical vapor deposition (CVD) over said isolation region.
9. A method for fabricating a metal-insulator-metal capacitor as recited in claim 1 wherein forming said MIMCAP pattern includes forming said MIMCAP pattern in said first ILD layer over said isolation region using lithography and reactive ion etch (RIE) processing.
10. A method for fabricating a metal-insulator-metal capacitor as recited in claim 1 wherein depositing said first conformal conductive liner includes using selected one of sputtering, chemical vapor deposition (CVD), atomic level deposition (ALD).
11. A method for fabricating a metal-insulator-metal capacitor as recited in claim 1 wherein depositing said first conformal conductive liner includes depositing a selected material or a combination of materials selected from a group consisting of TiN, TaN, W, Al, Cu, Ni, Co, and Ru.
12. A method for fabricating a metal-insulator-metal capacitor as recited in claim 1 wherein depositing said insulator over said first conformal conductive liner using a selected one of chemical vapor deposition (CVD), atomic level deposition (ALD).
13. A method for fabricating a metal-insulator-metal capacitor as recited in claim 1 wherein depositing said insulator over said first conformal conductive liner includes depositing a selected material or a combination of materials selected from a group consisting of an oxide, SiN, TaO5, HfO, ZrO, and AlO.
14. A method for fabricating a metal-insulator-metal capacitor as recited in claim 1 wherein forming said contact pattern through said conformal conductive liner, said insulator and said first inter-level dielectric (ILD) layer includes depositing a resist; and forming said contact pattern using lithography and reactive ion etch (RIE) processing.
15. A method for fabricating a metal-insulator-metal capacitor as recited in claim 1 wherein depositing said second conformal conductive liner over said MIMCAP pattern, said contact pattern and said first ILD layer includes using selected one of sputtering, chemical vapor deposition (CVD), atomic level deposition (ALD).
16. A method for fabricating a metal-insulator-metal capacitor as recited in claim 1 wherein depositing said second conformal conductive liner over said MIMCAP pattern, said contact pattern and said first ILD layer includes depositing a selected material or a combination of materials selected from a group consisting of TiN, TaN, W, Al, Cu, Ni, Co, and Ru.
17. A method for fabricating a metal-insulator-metal capacitor as recited in claim 1 wherein depositing said conductive stud over said second conformal conductive liner in said MIMCAP pattern and said contact pattern includes depositing said conductive stud formed of tungsten using chemical vapor deposition (CVD).
18. A method for fabricating a metal-insulator-metal capacitor (MIMCAP) comprising the steps of:
providing an initial structure; said initial structure including a substrate, and a buried oxide layer;
forming shallow trench isolation (STI) regions to pattern SOI regions on said buried oxide layer; and converting said SOI regions to salicide (self-aligned silicide) regions for defining an isolation region;
forming a barrier layer over said STI regions and said salicide regions;
providing a first inter-level dielectric (ILD) layer over said isolation region;
forming a MIMCAP pattern in said first ILD layer over said isolation region;
depositing a first conformal conductive liner over said MIMCAP pattern and said first ILD layer;
depositing an insulator over said first conformal conductive liner;
forming a contact pattern through said conformal conductive liner, said insulator, said first inter-level dielectric (ILD) layer and said barrier layer;
depositing a second conformal conductive liner over said MIMCAP pattern, said contact pattern and said first ILD layer; and
depositing a conductive stud over said second conformal conductive liner in said MIMCAP pattern and said contact pattern.
19. A method for fabricating a metal-insulator-metal capacitor (MIMCAP) as recited in claim 18 includes forming a first level metal layer on said conductive stud in said MIMCAP pattern and said contact pattern.
20. A method for fabricating a metal-insulator-metal capacitor (MIMCAP) as recited in claim 19 wherein forming said first level metal layer includes a damascene line wire level process including depositing a second inter-level dielectric (ILD) layer.