1. A Cu2Zn0.14Sn0.25Te2.34 nanocrystalline solution, wherein the particle size of Cu2Zn0.14Sn0.25Te2.34 nanocrystallines dispersed in the Cu2Zn0.14Sn0.25Te2.34 nanocrystalline solution is 5 to 20 nm; the band gap of the Cu2Zn0.14Sn0.25Te2.34 nanocrystallines is 0.8 to 1.5 ev; and the grain surface of the Cu2Zn0.14Sn0.25Te2.34 nanocrystallines has organic functional groups.
2. A method for preparing the Cu2Zn0.14Sn0.25Te2.34 nanocrystalline solution according to claim 1, comprising:
adding 0.1 to 1 mmol copper acetylacetonate, 0.2 to 2 mmol zinc acetylacetonate and 0.1 to 1 mmol stannous chloride into 5 to 50 ml oleyl amine to form a mixed solution;
heating the mixed solution up to 100-150\xb0 C., performing vacuum pumping until no bubble is produced in the mixed solution, stopping vacuum pumping, and introducing nitrogen, argon or other inert gas into the mixed solution;
heating the mixed solution up to 120-180\xb0 C., and adding 1 to 10 ml of 1 molL tributyl phosphate-tellurium (TBP-Te) precursor solution into the mixed solution;
heating the mixed solution up to 150-220\xb0 C., and reacting for 5 to 10 min; and
cooling the mixed solution to the room temperature after the reaction process is over, and adding a dispersant into the mixed solution to obtain the Cu2Zn0.14Sn0.25Te2.34 nanocrystalline solution,
wherein the tributyl phosphate-tellurium (TBP-Te) precursor solution is obtained by dissolving elemental tellurium in a tributyl phosphate (TBP) solvent under the protection of protective atmosphere.
3. The preparation method according to claim 2, comprising:
adding 0.25 mmol copper acetylacetonate, 0.5 mmol zinc acetylacetonate, and 0.25 mmol stannous chloride into 12 ml oleyl amine to form a mixed solution;
heating the mixed solution up to 110\xb0 C., performing vacuum pumping until no bubble is produced in the mixed solution, stopping vacuum pumping, and introducing nitrogen into the mixed solution;
heating the mixed solution up to 160\xb0 C., and adding 2 ml of 1 molL tributyl phosphate-tellurium (TBP-Te) precursor solution into the mixed solution;
heating the mixed solution up to 200\xb0 C., and reacting for 5 min; and
cooling the mixed solution to the room temperature after the reaction process is over, and adding a dispersant into the mixed solution to obtain the Cu2Zn0.14Sn0.25Te2.34 nanocrystalline solution.
4. (canceled)
5. The preparation method according to claim 2, wherein the step of cooling the mixed solution to the room temperature after the reaction process is over and adding the dispersant into the mixed solution to obtain the Cu2Zn0.14Sn0.25Te2.34 nanocrystalline solution includes:
cooling the mixed solution to the room temperature after the reaction process is over and adding n-hexane into the mixed solution to obtain the Cu2Zn0.14Sn0.25Te2.34 nanocrystalline solution, in which
the volume of the n-hexane added is 5 to 10 times the volume of the mixed solution.
6. A photosensitive resin solution for forming black matrix, comprising a light shielding material, an organic solvent and a resin, wherein
the light shielding material comprises a ternary or quaternary compound of Cu, Zn, Sn, S, Se, and Te.
7. The photosensitive resin solution according to claim 6, wherein the light shielding material is the Cu2Zn0.14Sn0.25Te2.34 nanocrystalline solution according to claim 1.
8. The photosensitive resin solution according to claim 6, wherein the concentration of the photosensitive resin solution is 0.5 to 100 gL.
9. The photosensitive resin solution according to claim 6, wherein the organic solvent is at least one selected from ethanol, ethylene glycol, n-butanol, isobutanol, isoamylol, tertiary amyl alcohol and glycerol; or
the organic solvent is at least one selected from ethylene diamine, isobutylamine, diisopropylamine, hexamethylene diamine and triethylamine; or
the organic solvent is at least one selected from acetic acid, propionic acid and ethane diacid.
10. A method for manufacturing black matrix, wherein the manufacturing method is used for forming the black matrix in a CF substrate and comprises:
forming a photosensitive resin solution which is the photosensitive resin solution according to claim 6;
cleaning a substrate obtained after forming a CF layer thereon;
spraying the photosensitive resin solution onto the side of the substrate provided with the CF layer by a solution method via a mask; and
drying the substrate sprayed with the photosensitive resin solution to obtain the black matrix.
11. The manufacturing method according to claim 10, wherein the step of forming the photosensitive resin solution includes:
dispersing the light shielding material into the organic solvent to form a mixed solution; and
dispersing the resin into the mixed solution to form the photosensitive resin solution.
12. The manufacturing method according to claim 10, wherein the solution method includes spray coating method, inkjet printing method, or screen printing method.
13. (canceled)
14. (canceled)
15. The preparation method according to claim 3, wherein the step of cooling the mixed solution to the room temperature after the reaction process is over and adding the dispersant into the mixed solution to obtain the Cu2Zn0.14Sn0.25Te2.34 nanocrystalline solution includes:
cooling the mixed solution to the room temperature after the reaction process is over and adding n-hexane into the mixed solution to obtain the Cu2Zn0.14Sn0.25Te2.34 nanocrystalline solution, in which
the volume of the n-hexane added is 5 to 10 times the volume of the mixed solution.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An intracerebral probe comprising: a first part with laser treatment means, and further comprising: a hollow second part surrounding the first part and having a longitudinal axis, the first part sliding inside the second part along said longitudinal axis; a plurality of detectors carried by the second part and distributed along a portion of the second part for identifying a brain dysfunction zone along the longitudinal axis of the second part; and a cooling system provided in the first part of the probe; wherein the laser treatment means is configured to treat the dysfunction zone by heating the dysfunction zone and the cooling system is configured to limit the heating.
2. An intracerebral probe according to claim 1, in which the detectors are electrodes, each electrode being adapted for detecting electrical activity in a zone of the brain surrounding the electrodes.
3. An intracerebral probe according to claim 1, in which the detectors are distributed circumferentially over the second part, around the longitudinal axis of the second part, or are segmented circumferentially so as to identify a position of the brain dysfunction zone angularly around said longitudinal axis.
4. An intracerebral probe according to claim 1, in which the second part of the probe presents a lateral treatment window enabling an action of the laser treatment means to be directed, said lateral treatment window being a window that is transparent to laser radiation emitted by said laser treatment means.
5. An intracerebral probe according to claim 4, in which said lateral treatment window extends along the longitudinal axis of the second part andor circumferentially around said longitudinal axis of the second part.
6. An intracerebral probe according to claim 5, in which a circumferential width of said lateral treatment window varies along the longitudinal axis of the second part.
7. An intracerebral probe according to claim 1, including a fastener system mounted on one or the other of the first and second parts of the probe and adapted to hold the first and second parts of the probe fixed in a determined relative position.
8. An intracerebral probe according to claim 1, such that all of the materials constituting the intracerebral probe are compatible with MRI, thereby making it possible to perform MRI monitoring while using the intracerebral probe.
9. A kit comprising the intracerebral probe according to claim 1, a guide for guiding the second part of the probe while it is being implanted in the brain, and a fastener system for holding said second part and the guide fixed in a determined relative position.
10. A kit according to claim 9, comprising a plastic sheath extending between said guide and an extracranial end of the first part of the probe so as to maintain a sterile environment for junctions between the guide and the second part of the probe, and between the first and second parts of the probe.
11. A treatment system comprising the intracerebral probe according to claim 1 and a control system for controlling operation of said laser treatment means, said control means system being connected to the detectors of the probe and adapted for, during treatment, receiving information from said detectors and modulating the operation of said laser treatment means as a function of the information received.
12. A treatment system according to claim 11, further comprising a connection system for connecting said control system to an MRI appliance so as to, during treatment, receive information from said MRI appliance and modulate the operation of said laser treatment means as a function of the information received.
13. A treatment system according to claim 11, including a position-identifier system co-operating with said detectors of the probe in order to identify a position of the brain dysfunction zone, and actuator(s) for moving the first part of the probe in such a manner as to bring the laser treatment means up to the identified position of the brain dysfunction zone.
14. An intracerebral probe according to claim 1, wherein said cooling system is a system for moving cooling liquid back and forth.
15. A treatment method comprising the following steps:
identifying the brain dysfunction zone, based on information collected by the detectors of the intracerebral probe of claim 1;
moving the first part of the intracerebral probe so as to bring the laser treatment means up to the dysfunction zone.
16. The treatment method of claim 15, wherein the information collected by the detectors is a brain electrical activity.
17. The treatment method of claim 15, wherein the intensity of the heating treatment is modulated based on information collected by the detectors during treatment.
18. The treatment method of claim 15, wherein the intensity of the heating treatment is modulated based on heating information collected by MRI during treatment.
19. The treatment method of claim 15, wherein moving and positioning of the intracerebral probe are tracked by MRI.
20. The treatment method of claim 15 used for treating epilepsy.
21. An intracerebral probe according to claim 1, wherein the second part of the probe has first, second, and third lateral windows juxtaposed along the longitudinal axis of the second part, the first lateral window having an aperture angle of 90 degrees about the longitudinal axis, the second lateral window having an aperture angle of 180 degrees about the longitudinal axis, and the third lateral window having an aperture angle of 360 degrees about the longitudinal axis.