1. A semiconductor laser device comprising;
a plurality of laser light oscillators that each emit a laser beam from a respective outlet;
a diffraction grating with vertical and horizontal grooves that cross each other and that at least partially directs a sufficient portion of a laser beam from the plurality of laser light oscillators to enter another of the plurality of laser light oscillators to enable a phase locking of the respective laser light oscillators while transmitting the remaining portion of the laser beam, when the respective outlets of the laser light oscillators are aligned with the diffraction grating to enable each one of the laser light oscillators to receive at least a portion of the laser beam from another of the plurality of laser light oscillators to enable a phase locking of each one of the plurality of laser light oscillators, and
one or more condenser lenses, wherein the one or more condenser lenses receives the laser beam emitted from an outlet portion of the diffraction grating and the diffracting grating is positioned optically between the plurality of laser light oscillators and the one or more condenser lenses.
2. The semiconductor laser device according to claim 1 wherein the diffraction grating is a flat plate.
3. The semiconductor laser device according to claim 1 wherein the diffraction grating includes a hologram to collimate portions of the laser beams transmitted therethrough.
4. The semiconductor laser device according to claim 1 wherein the laser light oscillators each have a refractive index guided self-aligned structure and are arranged parallel to each other.
5. The semiconductor laser device according to claim 4 wherein each of the laser light oscillators include GaInPAlGaInP quantum well active layers.
6. The semiconductor laser device according to claim 1 wherein the diffraction grating directs between 10% to 30% of the incident laser beam to enter other laser light oscillators.
7. The semiconductor laser device according to claim 1 wherein the diffraction grating directs the sufficient portion of the laser beam at an optical axis of another laser light oscillator.
8. The semiconductor laser device of claim 1 wherein the plurality of laser light oscillators are arranged in a plurality of arrays, each array includes a plural number of laser light oscillators, the arrays are vertically stacked and the diffraction grating partially directs a sufficient portion of a plurality of laser beams from each array to enter laser light oscillators of other stacked arrays to enable a phase locking of all of the laser light oscillators.
9. A semiconductor laser device comprising:
a plurality of laser light oscillators that each emit a laser beam from an outlet thereof;
a diffraction grating that transmits a laser beam that is oscillated in at least one of the laser light oscillators and is emitted from an outlet thereof, so that a portion of the laser beam is incident on at least one of the other laser light oscillators,
wherein the diffraction grating is a flat plate which includes the diffraction grating on a main surface thereof, the main surface being an incidence plane of the laser beam, and the flat plate partially diffracts the laser beam on the diffraction grating at a predetermined angle when the diffraction grating partially reflects the laser beam,
wherein the diffraction grating directs \u22121st order diffracted light and +1st order diffracted light generated when the laser beam is partially diffracted, so as to be respectively incident on laser light oscillators that are adjacent to the at least one of the laser light oscillators from which the laser beam has been emitted, and
one or more condenser lenses, wherein the one or more condenser lenses receives the laser beam emitted from an outlet portion of the diffraction grating and the diffracting grating is positioned optically between the plurality of laser light oscillators and the one or more condenser lenses, and the plurality of laser light oscillators are included in a semiconductor laser array element, and
the diffraction grating is disposed so as to face the outlet of the at least one of the laser light oscillators, the diffraction grating being a translucent member that (a) partially transmits the laser beam and (b) partially reflects or scatters the laser beam so that a portion of the laser beam is directed to the at least one of the other laser light oscillators.
10. The semiconductor laser device according to claim 9
wherein the plurality of semiconductor laser array elements respectively include substrate layers that have been cut out of one semiconductor wafer.
11. The semiconductor laser device according to claim 9
wherein the plurality of semiconductor laser array elements each have a real refractive index guided self-aligned structure.
12. A semiconductor laser device comprising:
a plurality of laser light oscillators that each emit a laser beam from an outlet thereof;
a diffraction grating that transmits a laser beam that is oscillated in at least one of the laser light oscillators and is emitted from an outlet thereof, so that a portion of the laser beam is incident on at least one of the other laser light oscillators,
wherein the diffraction grating is a flat plate which includes a diffraction grating on a main surface thereof, the main surface being an incidence plane of the laser beam, and the flat plate partially diffracts the laser beam on the diffraction grating at a predetermined angle when the diffraction grating partially reflects the laser beam,
wherein the diffraction grating directs \u22121st order diffracted light and +1st order diffracted light generated when the laser beam is partially diffracted, so as to be respectively incident on laser light oscillators that are adjacent to the at least one of the laser light oscillators from which the laser beam has been emitted, and
one or more condenser lenses, wherein the one or more condenser tenses receives the laser beam emitted from an outlet portion of the diffraction grating and the diffracting grating is positioned optically between the plurality of laser light oscillators and the one or more condenser lenses, and
wherein the plurality of laser light oscillators are included in a plurality of semiconductor laser array elements in such a manner that at least two laser light oscillators are included in each laser light oscillator in an array, the plurality of semiconductor laser array elements being stacked up, and
the diffraction grating is disposed so as to face the outlet of the at least one of the laser light oscillators included in one of the semiconductor laser array elements, the diffraction grating being a translucent member that (a) partially transmits the laser beam and (b) partially reflects or scatters the laser beam so that a portion of the laser beam is directed to the at least one of the other laser light oscillators included in the other semiconductor laser array elements.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for forming a film pattern by arranging a functional fluid on a base substrate and drying the functional fluid, the functional fluid including a solvent, the method comprising:
forming a plurality of liquid reception portions on the base substrate, the plurality of liquid reception portions being formed in a first area located proximate a center of the base substrate and a second area of the base substrate that entirely peripherally surrounds the first area and is located at peripheral edges of the base substrate;
depositing droplets of the functional fluid in the liquid reception portions formed in the first area; and
depositing droplets of the functional fluid or the solvent in the liquid reception portions formed in the second area,
wherein, in the second area, an amount of the solvent that is deposited in the liquid reception portions increases as a distance between the respective liquid reception portion and the center of the base substrate increases.
2. The method for forming a film pattern according to claim 1, wherein the second area includes a first region proximate the first area, a second region distal the first area compared to the first region, and a third region distal the second region, and an amount of solvent deposited in the third region is greater than amounts of solvent deposited in the second and first regions, and the amount of solvent deposited in the second region is greater than the amount of solvent deposited in the first region.
3. The method for forming a film pattern according to claim 1, wherein the first and second areas are rectangular, and an amount of the solvent is largest in the liquid reception portions located at corner portions of the rectangular second area.
4. The method for forming a film pattern according to claim 1, wherein the liquid reception portions are areas defined by partitions.
5. The method for forming a film pattern according to claim 1, wherein a size of the liquid reception portions in the first area is substantially identical to a size of the liquid reception portions in the second area.
6. The method for forming a film pattern according to claim 1, wherein a size of the liquid reception portions in the second area is larger than a size of the liquid reception portions in the first area.
7. The method for forming a film pattern according to claim 1, wherein, in the second area, a size of the liquid reception portions increases as the distance between the respective liquid reception area and the center of the base substrate increases.
8. The method for forming a film pattern according to claim 1, wherein an interval between adjacent liquid reception portions in the first area is substantially identical to an interval between adjacent liquid reception portions in the second area.
9. The method for forming a film pattern according to claim 1, wherein the liquid reception portions in the second area are formed in at least two rows along a periphery of the first area.
10. The method for forming a film pattern according to claim 1, wherein arrangement of the functional fluid or the solvent is performed employing a droplet discharge method.
11. The method of claim 1, wherein, in the second area, each droplet of functional fluid consists of solvent.