What is claimed is:
1. A semiconductor device, comprising:
a lower layer including at least one selected from the group consisting of a positional detection mark, a quality testing element, and a circuit element;
a shielding film formed on said lower layer for shielding an energy beam used for detecting a positional detection mark; and
an upper layer including a positional detection mark formed on said shielding film.
2. The semiconductor device as recited in claim 1, wherein
said shielding film has a substantially flat upper surface.
3. The semiconductor device as recited in claim 1, wherein
said shielding film is a metal film.
4. The semiconductor device as recited in claim 3, wherein
said metal film is an aluminum film.
5. The semiconductor device as recited in claim 3, wherein
said metal film has a substantially flat upper surface.
6. The semiconductor device as recited in claim 1, wherein
said lower layer includes an insulating film, and
the positional detection mark included in said lower layer is a groove formed in said insulating film.
7. The semiconductor device as recited in claim 6, wherein
said upper layer includes an upper layer insulating film, and
the positional detection mark included in said upper layer is a groove formed in said upper layer insulating film.
8. The semiconductor device as recited in claim 6, wherein
said upper layer includes an upper layer metal film, and
the positional detection mark included in said upper layer is a groove formed in said upper layer metal film.
9. The semiconductor device as recited in claim 6, wherein
said shielding film is a metal film.
10. The semiconductor device as recited in claim 1, wherein
said lower layer includes a lower layer metal film, and
the positional detection mark included in said lower layer is a groove formed in said lower layer metal film.
11. The semiconductor device as recited in claim 10, wherein
said upper layer includes an upper layer insulating film, and
the positional detection mark included in said upper layer is a groove formed in said upper layer insulating film.
12. The semiconductor device as recited in claim 10, wherein
said upper layer includes an upper layer metal film, and
the positional detection mark included in said upper layer is a groove formed in said upper layer metal film.
13. The semiconductor device as recited in claim 1, wherein
said upper layer includes an upper layer insulating film, and
the positional detection mark included in said upper layer is a groove formed in said upper layer insulating film.
14. The semiconductor device as recited in claim 1, wherein
said upper layer includes an upper layer metal film, and
the positional detection mark included in said upper layer is a groove formed in said upper layer metal film.
15. The semiconductor device as recited in claim 1, wherein
said positional detection mark is formed by a polysilicon film.
16. A semiconductor device, comprising:
a lower layer including at least one of a positional detection mark and a quality testing element;
an isolation insulating film formed on said lower layer; and
an upper layer formed on said isolation insulating film and including at least one selected from the group consisting of a quality testing element, an external electrode, and a dummy layer.
17. The semiconductor device as recited in claim 16, wherein
said lower layer includes an insulating film, and
the positional detection mark included in said lower layer is a groove formed in said insulating film.
18. The semiconductor device as recited in claim 16, wherein
said lower layer includes a metal film, and
the positional detection mark included in said lower layer is a groove formed in said metal film.
19. A method of manufacturing a semiconductor device, comprising the steps of:
forming a lower layer including at least one selected from the group consisting of a positional detection mark, a quality testing element, and a circuit element;
forming a shielding film for shielding an energy beam used for detecting a positional detection mark on said lower layer; and
forming an upper layer including a positional detection mark on said shielding film.
20. The method as recited in claim 19, further comprising the steps of:
forming an interlayer insulating film between said lower layer and said shielding film; and
planarizing an upper surface of said interlayer insulating film.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A macular sparing control method for ophthalmic laser treatment device, wherein that a control system automatically controls the switch of the said laser treatment device during the treatment process of fundus by the said laser treatment device: stops excitation of the laser treatment device when the laser spot irradiates onto the macular area, and starts excitation of the laser treatment device when the laser spot leaves the macular area.
2. The macular sparing control method for ophthalmic laser treatment device according to claim 1, wherein the said method comprises steps of:
S1 collect a fundus image;
S2 recognize a macular area on the fundus image;
S3 a control system monitors the movement of the laser spot on the fundus image; and
S4 stop excitation of the laser treatment device when the laser spot irradiates onto the macular area, start excitation of the laser treatment device when the laser spot leaves the macular area.
3. The macular sparing control method for ophthalmic laser treatment device according to claim 2, wherein the said fundus image in the said step S2 collected during the recognition of the macular area on the fundus image will be converted to a binary image.
4. The macular sparing control method for ophthalmic laser treatment device according to claim 3, wherein the said step S2 comprises steps of:
S21 enhance image contrast;
S22 perform a further filtering process on the image which contrast has been regulated;
S23 perform a hole filling process on the filtered image; and
S24 perform a thinning process on the hole filled image.
5. The macular sparing control method for ophthalmic laser treatment device according to claim 2, wherein the said step S3 comprises steps of:
S31 collect image which contains the position of the laser spot on the fundus;
S32 recognize the position of the laser spot;
S33 perform a superimposed-contrast between the image which the laser spot position has been recognized and the image which the macular area has been recognized in step S2, and judge whether there is a superimposition of the spot and the macular area. If there is a superimposition, it will judge that the spot irradiates onto the macular area, otherwise, it will judge that the spot doesn’t irradiate onto the macular area; and
repeat steps from S31 to S33 in high frequency.
6. The macular sparing control method for ophthalmic laser treatment device according to claim 2, wherein the said step S3 comprises steps of:
S310 continuously collect images which contain the position of the laser spot on the fundus;
S320 recognize positions of the laser spot on continuous images, to form a trajectory of the laser spot;
S330 predict the position of the laser spot on the next fundus image based on the said trajectory;
S340 judge whether the said position of the laser spot enters the recognized macular area. If it enters, it will judge that the spot irradiates onto the macular area, otherwise, it will judge that the spot doesn’t irradiate onto the macular area; and
repeat steps from S310 to S340 in high frequency.
7. The macular sparing control method for ophthalmic laser treatment device according to claim 1, wherein a circular pre-warning area is set outside the said macular area, the said control system sounds the alarm when the laser spot irradiates onto the pre-warning area.
8. The macular sparing control method for ophthalmic laser treatment device according to claim 7, wherein the way of forming the said pre-warning area is:
S5 isometrically extend the macular area outward 1\u02dc2 mm to form a pre-warning area.
9. A macular sparing control system for ophthalmic laser treatment device which employs the control method of claim 1, comprising:
a laser treatment device;
a fundus image acquisition device; and
a control system for processing images, monitoring the movement of the laser spot and automatically controlling the switch of the laser treatment device.
10. The said control system according to claim 9, wherein the said laser treatment device employs 810 nm semiconductor laser for micropulse threshold photo-coagulation, the said 810 nm semiconductor laser has:
laser pulse width: 0.15\u02dc0.25 ms;
laser slot time: 1.6\u02dc2.2 ms;
load factor: 8%\u02dc12%.