1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a metal silicate film on an underlying material containing silicon, said metal silicate film containing, as main chemical elements, silicon, oxygen and one, two or more of metallic element or elements selected from the group consisting of Hf, La, Zr and Al: and
removing said metal silicate film to expose said underlying material,
wherein said metal silicate film is removed during said removal of said metal silicate film by employing a chemical liquid solution containing one or more solvent or solvents selected from the group consisting of an ether-type organic solvent, N-methylpyrrolidone (NMP), propylene carbonate, butyrolactone, dimethylsulfoxide (DMSO), dimethylacetamide and dihydrofurfuryl alcohol (THFA), and hydrofluoric acid or a salt thereof.
2. The method of claim 1, wherein said underlying material containing silicon is SiO2.
3. The method of claim 1, wherein said ether-type organic solvent is butyl diglycol (BDG).
4. The method of claim 3, wherein a concentration of the hydrofluoric acid is between 0.5% and 5%.
5. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate insulating film comprising a metal silicate film on an underlying material containing silicon, said metal silicate film containing, as main chemical elements, silicon, oxygen and one, two or more of metallic element or elements selected from the group consisting of Hf, La, Zr and Al:
forming a gate electrode film on said gate insulating film;
selectively removing said gate electrode film to process thereof to a geometry of a gate electrode and to expose said metal silicate film; and
removing said metal silicate film to expose a surface of said underlying material,
wherein said metal silicate film is removed during said removal of said metal silicate film by employing a chemical liquid solution containing one or more solvent or solvents selected from the group consisting of an ether-type organic solvent, N-methylpyrrolidone (NMP), propylene carbonate, butyrolactone, dimethylsulfoxide (DMSO), dimethylacetamide and dihydrofurfuryl alcohol (THFA), and hydrofluoric acid or a salt thereof.
6. The method of claim 5, wherein said underlying material containing silicon is SiO2.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for detecting the presence of P-glycoprotein A (PGP-A), P-glycoprotein B (PGP-B), or P-glycoprotein O (PGP-O) in Haemonchus contortus, which comprises the steps of:
(a) preparing an antibody which is specific for a P-glycoprotein encoded by a nucleic acid molecule which comprises the nucleotide sequence of SEQ ID NO:3, SEQ ID NO:5, SEQ ID NO:7, or SEQ ID NO:8;
(b) preparing a specimen of Haemonchus contortus for reaction with the antibody;
(c) contacting the specimen with the antibody under suitable conditions that allow antibody-antigen binding to occur; and
(d) determining the presence or absence of antibody-antigen binding, wherein detection of said binding is indicative of the presence of the P-glycoprotein in the specimen.
2. The method according to claim 1, wherein the nucleic acid molecule comprises the nucleotide sequence of SEQ ID NO:3.
3. The method according to claim 2, wherein the nucleotide sequence of SEQ ID NO:3 encodes the P-glycoprotein of SEQ ID NO:6.