1. A method comprising:
forming a dielectric isolation feature in a semiconductor substrate;
removing a portion of the semiconductor substrate to form a recess adjacent the dielectric isolation feature;
forming a semiconductor material in the recess;
incorporating a doping species into the semiconductor material, the doping species selected from the group consisting of sulfur and selenium; and
forming a gate structure on the semiconductor material.
2. The method of claim 1, further comprising recessing the dielectric isolation feature prior to forming the gate structure on the semiconductor material.
3. The method of claim 1, wherein forming the gate structure over the semiconductor material includes forming a dielectric layer over the semiconductor material and forming a gate electrode over the dielectric layer.
4. The method of claim 1, wherein incorporating the doping species into the semiconductor material includes performing an implantation process to incorporate the doping species into the semiconductor material.
5. The method of claim 1, further comprising forming a sourcedrain feature in the semiconductor substrate.
6. The method of claim 1, further comprising planarizing a top surface of the dielectric isolation feature and a top surface of the semiconductor substrate.
7. The method of claim 1, wherein the dielectric isolation feature includes a shallow trench isolation structure.
8. The method of claim 1, wherein the semiconductor substrate has a first lattice constant and the semiconductor material has a second lattice constant different from the first lattice constant.
9. The method of claim 1, wherein the semiconductor material includes germanium.
10. A method comprising:
forming a fin structure on a semiconductor substrate;
incorporating a doping species into the fin structure, the doping species selected from the group consisting of sulfur and selenium; and
forming a gate structure over the fin structure.
11. The method of claim 10, wherein forming the fin structure on the semiconductor substrate includes:
removing a portion of the semiconductor substrate to form a recess; and
forming a semiconductor material in the recess.
12. The method of claim 11, wherein the semiconductor substrate has a first lattice constant and the semiconductor material has a second lattice constant different from the first lattice constant.
13. The method of claim 10, wherein incorporating the doping species into the fin structure includes performing an implantation process to incorporate the doping species into the fin structure.
14. The method of claim 10, further comprising
forming a shallow trench isolation structure in the semiconductor substrate; and
removing a portion of the shallow trench isolation structure prior to incorporating the doping species into the fin structure.
15. The method of claim 10, wherein forming the fin structure on the semiconductor substrate include epitaxially growing a semiconductor material on the semiconductor substrate.
16. A method of forming a fin field effect transistor (FinFET) structure, the method comprising:
forming a plurality of shallow trench isolation (STI) features in a semiconductor substrate of a first semiconductor material, thereby defining a plurality of semiconductor features separated from each other by the STI features;
recessing the semiconductor features;
epitaxy growing a second semiconductor material on the recessed semiconductor features to form a plurality of fin active regions of the second semiconductor material, wherein the second semiconductor material has a lattice mismatch with the first semiconductor material, generating threading dislocation defects in the fin active regions; and
performing a fluorine implantation to the fin active regions to deactivate the threading dislocation defects formed in the fin active regions.
17. The method of claim 16, further comprising:
performing a polishing process to remove excessive second semiconductor material after the epitaxy growing a second semiconductor material; and
thereafter, recessing the STI features.
18. The method of claim 16, further comprising performing an annealing process to fluorine doping species in the fin active regions after the performing a fluorine implantation for defect deactivation.
19. The method of claim 18, wherein
the first semiconductor material is silicon,
the epitaxy growing a second semiconductor material includes epitaxy growing silicon germanium, and
the annealing process has an annealing temperature ranging between about 500 C and about 900 C.
20. The method of claim 16, wherein the performing a fluorine implantation includes performing the fluorine implantation with a dose ranging between about 1\xd71012cm2 and about 1\xd71016cm2.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A quick connector assembly for establishing fluid communication between a first fluid line and a second fluid line and a sensor, said assembly comprising:
a coupling housing extending along a coupling axis between an inlet end and an outlet end;
a fluid quick connector disposed about one of said ends;
said coupling housing defining a coupling passageway extending along said coupling axis between said ends and an auxiliary passageway in fluid communication with said coupling passageway and extending along an auxiliary axis which intersects said coupling axis;
said coupling housing including a sensor quick connector axially aligned with said auxiliary axis; and
a sensor housing insertable along said auxiliary axis and including at least one locking barb to establish interlocking relationship with said sensor quick connector.
2. A connector assembly as set forth in claim 1 wherein said sensor quick connector includes at least one leg and said locking barb extends radially outwardly for flexing said leg during axial movement of said sensor housing along said auxiliary axis to establish said interlocked position of said coupling housing and said sensor housing.
3. A connector assembly as set forth in claim 2 wherein said leg includes a mechanical stop and said locking barb includes a first shoulder for engaging said mechanical stop in said interlocked position to prevent axial movement of said sensor housing.
4. A connector assembly as set forth in claim 3 wherein said sensor housing includes a male portion extending downwardly from said locking barb to a distal end disposed within said auxiliary passageway in said interlocked position.
5. A connector assembly as set forth in claim 4 wherein said sensor housing includes a receiving portion for coupling a sensor with said sensor housing and said male portion defines a sensor housing passageway extending from said receiving portion to said distal end for establishing communication between the sensor and said coupling housing to allow the sensor to monitor a characteristic of fluid in said coupling passageway and said auxiliary passageway.
6. A connector assembly as set forth in claim 4 wherein said auxiliary passageway has an auxiliary passageway diameter and said male portion is cylindrical to define a male portion diameter complementary to said auxiliary passageway diameter for establishing abutting relationship between said male portion and said auxiliary passageway.
7. A connector assembly as set forth in claim 6 wherein said male portion defines an annular notch and an o-ring is disposed within said annular notch for establishing sealed relationship between said sensor housing and said coupling housing in said interlocked position.
8. A connector assembly as set forth in claim 4 wherein said at least one locking barb includes a secondary gripping barb extending radially outwardly from said male portion between said locking barb and said distal end and said coupling housing defines a groove for receiving said secondary gripping barb in said interlocked position of said housings to establish secondary interlocking relationship between said housings and prevent rotational movement of said sensor housing about said auxiliary axis.
9. A connector assembly as set forth in claim 8 wherein said secondary gripping barb extends circumferentially about said male portion to define a second shoulder and said groove annularly disposed about said auxiliary passageway to define a second mechanical stop wherein said second shoulder and said second mechanical stop interact to establish said secondary interlocking relationship and further prevent axial movement of said sensor housing.
10. A connector assembly as set forth in claim 2 wherein said coupling housing includes a collar extending circumferentially about said auxiliary axis to further define said auxiliary passageway and said at least one leg extends from said collar to a receiving end for allowing said leg to flex about said collar during said axial movement of said sensor housing.
11. A connector assembly as set forth in claim 10 wherein said leg having a first tapered surface being tapered towards said receiving end and said locking barb having a second tapered surface sized complementary to said first tapered surface and being tapered from said first shoulder towards said distal end for establishing sliding engagement along said tapered surfaces during axial movement of said sensor housing to flex said leg radially outwardly about said auxiliary axis.
12. A connector assembly as set forth in claim 11 wherein said leg having a first transition surface extending between said first tapered surface and said mechanical stop and said locking barb having a second transition surface sized complementary to said first transition surface and extending between said first shoulder and said second tapered surface for establishing sliding engagement along said tapered surfaces during axial movement of said sensor housing to align said mechanical stop and said first shoulder and allow said leg to snap radially inwardly and establish said interlocked position of said sensor housing and said coupling housing.
13. A connector assembly as set forth in claim 12 wherein said locking barb extends circumferentially about said male portion to define said first shoulder.
14. A connector assembly as set forth in claim 13 wherein said leg is semi-cylindrical to define a convex surface relative to the auxiliary axis and disposed opposite said first transition surface and wherein said first transition surface is concave relative to the auxiliary axis to correspond with said locking barb.
15. A connector assembly as set forth in claim 14 wherein said leg defines a window extending therethrough between said surfaces to define said first mechanical stop.
16. A connector assembly as set forth in claim 15 wherein said leg defines at least one channel disposed next adjacent said surfaces and extending between said collar and said receiving end for reducing mechanical resistance of said leg to said flexing.
17. A connector assembly as set forth in claim 1 wherein said auxiliary axis is disposed transverse to said coupling axis.