1460919647-f9032eda-309e-4436-ade1-d0e239f10e40

1. A process for improving the electrical properties of an amorphous oxide-noble metal thin film resistor comprising:
simultaneously depositing an amorphous oxide and a noble metal using thin film deposition sources to form a layer of nanocomposite material such that a change in resistance with temperature of the nanocomposite material is substantially that of the amorphous oxide and is intermediate to that of the noble metal.
2. The process of claim 1, that comprises the steps of:
selecting a vessel having a main reaction chamber with a plurality of sputter gun targets and a load lock chamber;
selecting a plurality of sputter guns connected to a power supply and directed to the plurality of sputter gun targets;
selecting a first set of shutters that are integrated into each of the sputter guns;
selecting a second set of shutters that cover a deposition source in the main reaction chamber;
operating the load lock chamber to isolate the main reaction chamber from exposure to the atmosphere;
controlling the pressure of gases inside the main reaction chamber forming a vacuum condition to eliminate contaminants;
using a magnetically coupled load arm to deliver a sample of amorphous oxide and noble metal material to the plurality of sputter gun targets in the main reaction chamber;
isolating the sample of amorphous oxide and noble metal material from the deposition substrate by the second set of shutters;
activating the power supply to operate the plurality of sputter guns directed to the sputter gun targets loaded with amorphous oxide and noble metal material;
depositing a thin film of amorphous oxide and noble metal material onto the deposition substrate while the first set of shutters on the plurality of sputter guns blocks the stream of material from exiting each gun; and
transferring the thin film on the deposition substrate from the main reaction chamber through the load lock chamber for removal of the thin film and evaluation as a resistor.
3. The process of claim 2, further comprising the step of rotating the sample of amorphous oxide and metal material about a central axis during the deposition process.
4. The process of claim 3, wherein the amorphous oxide is selected from the group consisting of oxides of vanadium and amorphous silicon.
5. The process of claim 3, wherein the metal is selected from the group consisting of: gold, platinum, palladium, indium, gallium, copper, and silver.
6. A structure composition for a thin film resistor consisting essentially of:
an amorphous oxide-noble metal comprising co-dispersed amorphous oxide and a noble metal using thin film deposition source to form a layer of nanocomposite material having crystalline regions of a noble metal within the amorphous oxide such that a change in resistance with temperature is substantially that of the amorphous semiconducting oxide and is intermediate to that of the noble metal.
7. The composition of claim 6, wherein the amorphous oxide is vanadium oxide and the crystalline noble metal is gold.
8. A method for fabricating vanadium oxide-noble metal thin film composites comprising the steps of:
a) selecting a processing vessel a first chamber and a second chamber;
b) coating a plurality of substrates with thermally insulating membranes;
c) mounting the plurality of substrates on a holder in the first chamber;
d) allowing oxygen and argon to flow until the flow and the second chamber pressure stabilizes;
e) loading the substrates of step c) into the second chamber with vanadium and a noble metal;
f) applying power to the vanadium noble metal target;
g) depositing removably a thin film of vanadium oxide noble metal on the substrate inside the second chamber; and
h) removing vanadium oxide noble metal thin film composites for use in infrared imaging and detection.
9. The method of claim 8, wherein the first chamber is a load lock chamber.
10. The method of claim 8, wherein the second chamber is a main processing chamber.
11. The method of claim 8, wherein the noble metal is selected from at least one of platinum (Pt) and gold (Au).
12. The method of claim 8, wherein the vanadium oxide noble metal is gold (Au) addition to vanadium oxide.
13. The method of claim 8, wherein the vanadium oxide is selected from at least one of VO2, V2 O3 and V2 O5.
14. The process of claim 1 further comprising the step of:
controlling a temperature and a oxygen concentration during and after the depositing step to control a crystal structure of vanadium oxide.
15. The composition of claim 6, wherein the amorphous oxide is selected from the group consisting of oxides of vanadium and amorphous silicon.
16. The composition of claim 6, wherein the noble metal is selected from at least one of platinum (Pt) and gold (Au).
17. The composition of claim 7, wherein the vanadium oxide is selected from at least one of VO2, V2 O3 and V2 O5.
18. The composition of claim 6, wherein the structure is a thin film.
19. The composition of claim 6, wherein the noble metal is selected from a group consisting of: gold, platinum, palladium, indium, gallium, copper, and silver.
20. A process for producing a resistor consisting essentially of:
co-dispersing a mixture of a high resistivity material with a low resistivity material to form a nanocomposite material combined such that the change in resistance with temperature of the nanocomposite material is substantially that of the high resistivity material and that the resistance of the nanocomposite materials is intermediate to that of the high resistivity materials and that of the low resistivity material.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for communication within a networked computer system including multiple processing clusters, the clusters comprising a plurality of physical or virtual processing modes, the method comprising:
designating at least one target node in a first one of the processing clusters;
identifying the at least one target node to a given one of the processing nodes in a second one of the processing clusters;
providing a link layer address to use for communication between the first and second processing cluster;
transmitting a message from the given processing node to the target node by identifying the target node using the target node name, wherein the message contains the link layer address;
responsive to the transmitting, receiving the message at the target node;
responsive to the receiving, storing the link layer address in a second shared storage accessible by the processing nodes in the first cluster;
notifying second other ones of the processing nodes in the second cluster of the configuration change, whereby the at least one first gateway node is notified that the link layer address is available to enable communications with the second cluster; and
subsequently communicating between at least one first gateway node in the first cluster and at least one second gateway node in the second cluster using the link layer address, whereby the at least one first gateway node and the at least one second gateway node communicate independent of whether the first and second processing clusters are on the same network.
2. The method of claim 1, further comprising:
responsive to the designating and the identifying, storing the link layer address in a first shared storage accessible by the processing nodes in the second cluster; and
notifying first other ones of the processing nodes in the second cluster of a configuration change, whereby the first other nodes are notified that the link layer address is available in the first shared storage, to enable the at least second gateway node to communicate with the first cluster.
3. The method of claim 1, wherein the designating designates at least two target nodes to provide redundant communication of the link address between the first and the second clusters.
4. The method of claim 1, wherein the subsequently communicating comprises transmitting and receiving status change event messages between the first and second clusters.
5. The method of claim 4, wherein the subsequently communicating comprises transmitting and receiving node status change messages between the first and the second clusters.
6. A method for communication within a networked computer system including multiple processing clusters, the clusters comprising a plurality of physical or virtual processing modes, the method comprising:
designating at least one target node in a first one of the processing clusters;
identifying the at least one target node to a given one of the processing nodes in a second one of the processing clusters;
providing a link layer address to use for communication between the first and second processing cluster;
responsive to the designating and the identifying, storing the link layer address in a first shared storage accessible by the processing nodes in the second cluster;
transmitting a message from the given processing node to the target node by identifying the target node using the target node name, wherein the message contains the link layer address;
notifying first other ones of the processing nodes in the second cluster of a configuration change, whereby the first other nodes are notified that the link layer address is available in the first shared storage, to enable the at least second gateway node to communicate with the first cluster; and
subsequently communicating between at least one first gateway node in the first cluster and at least one second gateway node in the second cluster using the link layer address, whereby the at least one first gateway node and the at least one second gateway node communicate independent of whether the first and second processing clusters are on the same network.
7. The method of claim 6, wherein the designating designates at least two target nodes to provide redundant communication of the link address between the first and the second clusters.
8. The method of claim 6, wherein the subsequently communicating comprises transmitting and receiving status change event messages between the first and second clusters.
9. The method of claim 6, wherein the subsequently communicating comprises transmitting and receiving node status change messages between the first and the second clusters.
10. A networked computer system comprising a plurality of processing clusters including a plurality of physical or virtual processing modes, the computer system comprising at least one processor for executing program instructions and at least one memory coupled to the processor for executing the program instructions, wherein the program instructions are program instructions for providing communications between the clusters, the program instructions comprising program instructions for:
receiving user input designating at least one target node in a first one of the processing clusters and a link layer address to use for communication between the first and second processing cluster;
identifying the at least one target node to a given one of the processing nodes in a second one of the processing clusters;
responsive to the designating and the identifying, storing the link layer address in a first shared storage accessible by the processing nodes in the second cluster;
transmitting a message from the given processing node to the target node by identifying the target node using the target node name, wherein the message contains the link layer address;
subsequently communicating between at least one first gateway node in the first cluster and at least one second gateway node in the second cluster using the link layer address, whereby the at least one first gateway node and the at least one second gateway node communicate independent of whether the first and second processing clusters are on the same network; and
notifying first other ones of the processing nodes in the second cluster of a configuration change, whereby the first other nodes are notified that the link layer address is available in the first shared storage, to enable the at least second gateway node to communicate with the first cluster.
11. The computer system of claim 10, wherein the program instructions for receiving user input receive a user input designating at least two target nodes to provide redundant communication of the link address between the first and second processing clusters.
12. The computer system of claim 10, wherein the program instructions for subsequently communicating comprise program instructions for comprises transmitting and receiving status change event messages between the first and second clusters.
13. The computer system of claim 12, wherein the program instructions for subsequently communicating comprise program instructions for transmitting and receiving node status change messages between the first and the second clusters.