1: A light exposure condition setting method comprising:
forming a resist film on an etching target layer disposed on a test substrate, and performing sequential light exposure with a predetermined test pattern on the resist film sequentially at a plurality of areas, while respectively using different combinations of a light exposure amount and a focus value, along with subsequent development, thereby forming resist patterns at the plurality of areas;
measuring shapes of the resist patterns at the plurality of areas by means of a scatterometory technique;
etching the etching target layer by use of the resist film with the resist patterns formed thereon as an etching mask, and removing the resist film from the substrate, thereby forming etched patterns at the plurality of areas;
measuring shapes of the etched patterns at the plurality of areas by means of a scatterometory technique; and
determining a management span of combinations of a light exposure amount and a focus value admissible to obtain an etched pattern with a predetermined shape, with reference to the combinations of a light exposure amount and a focus value used in the sequential light exposure for the plurality of areas, measurement results of the shapes of the resist patterns formed at the plurality of areas, and measurement results of the shapes of the etched patterns formed at the plurality of areas.
2: The light exposure condition setting method according to claim 1, wherein the method further comprises:
determining one combination of a light exposure amount and a focus value within the management span after determining the management span;
forming a resist film on an etching target layer disposed on a product substrate, and performing light exposure with a predetermined product pattern on the resist film, while using the combination of a light exposure amount and a focus value thus determined, along with subsequent development; and etching the etching target layer and removing the resist film, thereby forming an etched pattern;
measuring a shape of the etched pattern by means of a scatterometory technique;
judging whether or not the shape of the etched pattern is within a predetermined admissible dimension range; and,
if the shape of the etched pattern is out of the admissible dimension range,
determining a new combination of a light exposure amount and a focus value within the management span such that a shape of an etched pattern to be formed on another product substrate subsequently processed is brought into the admissible dimension range.
3: The light exposure condition setting method according to claim 1, wherein the method further comprises:
determining one combination of a light exposure amount and a focus value within the management span after determining the management span;
forming a resist film on an etching target layer disposed on a product substrate, and performing light exposure with a predetermined product pattern on the resist film, while using the combination of a light exposure amount and a focus value thus determined, along with subsequent development; and etching the etching target layer and removing the resist film, thereby forming an etched pattern;
measuring a shape of the etched pattern by means of a scatterometory technique;
judging whether or not the shape of the etched pattern is within a predetermined admissible dimension range;
if the shape of the etched pattern formed on the product substrate is out of the predetermined admissible dimension range, and a new combination of a light exposure amount and a focus value, determined such that a shape of an etched pattern to be formed on another product substrate subsequently processed is brought into the admissible dimension range, is out of the management span,
performing light exposure with the product pattern on said another product substrate, while using the new combination of a light exposure amount and a focus value thus determined, along with subsequent development; and measuring a shape of a resist pattern thereby obtained;
if the shape of the resist pattern is within a predetermined dimension range,
determining a new management span of combinations of a light exposure amount and a focus value, with reference to a target dimension of the test pattern, the shapes of the resist patterns formed on the test substrate, and the combinations of a light exposure amount and a focus value used in the sequential light exposure; and,
if the shape of the resist pattern is out of a predetermined dimension range,
re-executing a series of processes to determine a new management span of combinations of a light exposure amount and a focus value, while using a new test substrate.
4: The light exposure condition setting method according to claim 3, wherein, in order to determine the new management span, while using the new test substrate, the method further comprises, prior to processing the new test substrate, checking apparatuses used for a series of processes from resist film formation through an etching process to resist film removal.
5: The light exposure condition setting method according to claim 1, wherein the plurality of areas form a matrix with a light exposure amount and a focus value used as parameters.
6: The light exposure condition setting method according to claim 1, wherein a measurement target of a pattern includes a line width of the pattern.
7: A substrate processing apparatus comprising:
a light exposure processing section configured to perform light exposure with a predetermined pattern on a resist film formed on an etching target layer disposed on a substrate;
a pattern shape measuring section configured to measure a shape of a resist pattern and a shape of an etched pattern by means of a scatterometory technique; and
a control section configured to control the light exposure processing section and the pattern shape measuring section,
wherein the control section makes reference to:
a result of performing sequential light exposure with a predetermined test pattern on a resist film formed on a substrate, sequentially at a plurality of areas, while respectively using different combinations of a light exposure amount and a focus value, along with subsequent development, thereby forming resist patterns at the plurality of areas, and then measuring shapes of the resist patterns at the plurality of areas by the pattern shape measuring section;
a result of etching the etching target layer by use of the resist film with the resist patterns formed thereon as an etching mask, thereby forming etched patterns at the plurality of areas, and then measuring shapes of the etched patterns at the plurality of areas by the pattern shape measuring section; and
the combinations of a light exposure amount and a focus value used in the sequential light exposure for the plurality of areas,
so as to determine a management span of combinations of a light exposure amount and a focus value admissible to obtain a predetermined etched pattern.
8: The substrate processing apparatus according to claim 7, wherein,
if a shape of an etched pattern formed on a product substrate by performing light exposure thereon, while using one combination of a light exposure amount and a focus value determined within the management span, is out of the admissible dimension range,
the control section determines a new combination of a light exposure amount and a focus value within the management span such that a shape of an etched pattern to be formed on another product substrate subsequently processed is brought into the admissible dimension range.
9: The substrate processing apparatus according to claim 7, wherein,
if a shape of an etched pattern formed on a product substrate by performing light exposure thereon, while using one combination of a light exposure amount and a focus value determined within the management span, is out of the admissible dimension range, and a new combination of a light exposure amount and a focus value, determined such that a shape of an etched pattern to be formed on another product substrate subsequently processed is brought into the admissible dimension range, is out of the management span,
the control section controls the light exposure processing section to perform light exposure on said another product substrate, while using the new combination of a light exposure amount and a focus value thus determined, and,
if a shape of a resist pattern formed on said another product substrate by performing light exposure thereon, while using the new combination of a light exposure amount and a focus value, is within a predetermined dimension range,
the control section determines a new management span of combinations of a light exposure amount and a focus value, with reference to the shapes of the resist patterns formed on the substrate by the sequential light exposure, a target dimension of a photo mask used for forming the resist patters, and the combinations of a light exposure amount and a focus value used in the sequential light exposure.
10: The substrate processing apparatus according to claim 7, wherein the pattern shape measuring section includes a first measuring section configured to measure a shape of a resist pattern and a second measuring section configured to measure a shape of an etched pattern.
11: A computer readable medium containing program instructions for execution on a processor used for a substrate processing apparatus, which comprises a light exposure processing section configured to perform light exposure with a predetermined pattern on a resist film formed on a substrate, and a pattern shape measuring section configured to measure a shape of a resist pattern and a shape of an etched pattern by means of a scatterometory technique, wherein the program instructions, when executed by the computer, control the apparatus to perform a method comprising:
forming a resist film on an etching target layer disposed on a test substrate, and performing sequential light exposure with a predetermined test pattern on the resist film sequentially at a plurality of areas, while respectively using different combinations of a light exposure amount and a focus value, along with subsequent development, thereby forming resist patterns at the plurality of areas;
measuring shapes of the resist patterns at the plurality of areas by means of a scatterometory technique;
etching the etching target layer by use of the resist film with the resist patterns formed thereon as an etching mask, and removing the resist film from the substrate, thereby forming etched patterns at the plurality of areas;
measuring shapes of the etched patterns at the plurality of areas by means of a scatterometory technique; and
determining a management span of combinations of a light exposure amount and a focus value admissible to obtain an etched pattern with a predetermined shape, with reference to the combinations of a light exposure amount and a focus value used in the sequential light exposure for the plurality of areas, measurement results of the shapes of the resist patterns formed at the plurality of areas, and measurement results of the shapes of the etched patterns formed at the plurality of areas.
12: The computer readable medium according to claim 11, wherein the method further comprises:
determining one combination of a light exposure amount and a focus value within the management span after determining the management span;
forming a resist film on an etching target layer disposed on a product substrate, and performing light exposure with a predetermined product pattern on the resist film, while using the combination of a light exposure amount and a focus value thus determined, along with subsequent development; and etching the etching target layer and removing the resist film, thereby forming an etched pattern;
measuring a shape of the etched pattern by means of a scatterometory technique;
judging whether or not the shape of the etched pattern is within a predetermined admissible dimension range; and,
if the shape of the etched pattern is out of the admissible dimension range,
determining a new combination of a light exposure amount and a focus value within the management span such that a shape of an etched pattern to be formed on another product substrate subsequently processed is brought into the admissible dimension range.
13: The computer readable medium according to claim 11, wherein the method further comprises:
determining one combination of a light exposure amount and a focus value within the management span after determining the management span;
forming a resist film on an etching target layer disposed on a product substrate, and performing light exposure with a predetermined product pattern on the resist film, while using the combination of a light exposure amount and a focus value thus determined, along with subsequent development; and etching the etching target layer and removing the resist film, thereby forming an etched pattern;
measuring a shape of the etched pattern by means of a scatterometory technique;
judging whether or not the shape of the etched pattern is within a predetermined admissible dimension range;
if the shape of the etched pattern formed on the product substrate is out of the predetermined admissible dimension range, and a new combination of a light exposure amount and a focus value, determined such that a shape of an etched pattern to be formed on another product substrate subsequently processed is brought into the admissible dimension range, is out of the management span,
performing light exposure with the product pattern on said another product substrate, while using the new combination of a light exposure amount and a focus value thus determined, along with subsequent development; and measuring a shape of a resist pattern thereby obtained;
if the shape of the resist pattern is within a predetermined dimension range,
determining a new management span of combinations of a light exposure amount and a focus value, with reference to a target dimension of the test pattern, the shapes of the resist patterns formed on the test substrate, and the combinations of a light exposure amount and a focus value used in the sequential light exposure; and,
if the shape of the resist pattern is out of a predetermined dimension range,
re-executing a series of processes to determine a new management span of combinations of a light exposure amount and a focus value, while using a new test substrate.
14: A light exposure condition setting method comprising:
forming a resist film on an etching target layer disposed on a test substrate, and performing sequential light exposure with a predetermined test pattern on the resist film sequentially at a plurality of areas, while respectively using different combinations of a light exposure amount and a focus value, along with subsequent development, thereby forming resist patterns at the plurality of areas;
measuring shapes of the resist patterns at the plurality of areas by means of a scatterometory technique;
forming a resist film on an etching target layer disposed on a product substrate, and performing light exposure with a predetermined product pattern on the resist film, while using a predetermined combination of a light exposure amount and a focus value, along with subsequent development, etching, and resist film removal, thereby forming an etched patterns; and measuring shapes of the etched patterns by means of a scatterometory technique; and,
if the etched patterns include an etched pattern at an area with a shape out of an admissible dimension range,
changing the combination of a light exposure amount and a focus value used for performing light exposure on a product substrate, such that shapes of all etched patterns are brought into the admissible dimension range, with reference to the combinations of a light exposure amount and a focus value used in the sequential light exposure for the plurality of areas on the test substrate and measurement data of the shapes of the resist patterns formed on the test substrate.
15: The light exposure condition setting method according to claim 14, wherein a new combination of a light exposure amount and a focus value is applied to an area with a shape of an etched pattern out of the admissible dimension range, and a preceding combination of a light exposure amount and a focus value is applied to an area with a shape of an etched pattern within the admissible dimension range.
16: A substrate processing apparatus comprising:
a light exposure processing section configured to perform light exposure with a predetermined pattern on a resist film formed on an etching target layer disposed on a substrate;
a pattern shape measuring section configured to measure a shape of a resist pattern and a shape of an etched pattern by means of a scatterometory technique; and
a control section configured to control the light exposure processing section and the pattern shape measuring section,
wherein the control section makes reference to:
a result of performing sequential light exposure with a predetermined test pattern on a resist film formed on a test substrate, sequentially at a plurality of areas, while respectively using different combinations of a light exposure amount and a focus value, along with subsequent development, thereby forming resist patterns at the plurality of areas, and then measuring shapes of the resist patterns at the plurality of areas by the pattern shape measuring section;
the combinations of a light exposure amount and a focus value used in the sequential light exposure for the plurality of areas; and
a result of performing light exposure with a predetermined product pattern on a resist film formed on an etching target layer disposed on a product substrate, while using a predetermined combination of a light exposure amount and a focus value, along with subsequent development, etching, and resist film removal, thereby forming an etched patterns; and measuring shapes of the etched patterns by the pattern shape measuring section,
if the etched patterns include an etched pattern at an area with a shape out of an admissible dimension range, and when the control section changes the combination of a light exposure amount and a focus value used for performing light exposure on a product substrate, such that shapes of all etched patterns are brought into the admissible dimension range.
17: The substrate processing apparatus according to claim 16, wherein the control section is arranged such that a new combination of a light exposure amount and a focus value is applied to an area with a shape of an etched pattern out of the admissible dimension range, and a preceding combination of a light exposure amount and a focus value is applied to an area with a shape of an etched pattern within the admissible dimension range.
18: A computer readable medium containing program instructions for execution on a processor used for a substrate processing apparatus, which comprises a light exposure processing section configured to perform light exposure with a predetermined pattern on a resist film formed on a substrate, and a pattern shape measuring section configured to measure a shape of a resist pattern and a shape of an etched pattern by means of a scatterometory technique, wherein the program instructions, when executed by the computer, control the apparatus to perform a method comprising:
forming a resist film on an etching target layer disposed on a test substrate, and performing sequential light exposure with a predetermined test pattern on the resist film sequentially at a plurality of areas, while respectively using different combinations of a light exposure amount and a focus value, along with subsequent development, thereby forming resist patterns at the plurality of areas;
measuring shapes of the resist patterns at the plurality of areas by means of a scatterometory technique;
forming a resist film on an etching target layer disposed on a product substrate, and performing light exposure with a predetermined product pattern on the resist film, while using a predetermined combination of a light exposure amount and a focus value, along with subsequent development, etching, and resist film removal, thereby forming an etched patterns; and measuring shapes of the etched patterns by means of a scatterometory technique; and,
if the etched patterns include an etched pattern at an area with a shape out of an admissible dimension range,
changing the combination of a light exposure amount and a focus value used for performing light exposure on a product substrate, such that shapes of all etched patterns are brought into the admissible dimension range, with reference to the combinations of a light exposure amount and a focus value used in the sequential light exposure for the plurality of areas on the test substrate and measurement data of the shapes of the resist patterns formed on the test substrate.
19: The computer readable medium according to claim 18, wherein a new combination of a light exposure amount and a focus value is applied to an area with a shape of an etched pattern out of the admissible dimension range, and a preceding combination of a light exposure amount and a focus value is applied to an area with a shape of an etched pattern within the admissible dimension range.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A sulfonylindoline compound, selected from the group consisting of:
i) compounds corresponding to formula i
in which:
R1 is a hydrogen atom, a halogen, a C1-C4 alkyl group, a C1-C4 alkoxy group, a trifluoromethyl group or a totally or partially halogenated methoxy group,
R2 is a hydrogen atom, a halogen, a C1-C4 alkyl group or a trifluoromethyl group,
R3 is a hydrogen atom, a halogen, a C1-C4 alkyl group or a trifluoromethyl group, with the proviso that R1, R2 and R3 are not simultaneously a hydrogen atom,
R4 is a hydrogen atom or a C1-C4 alkoxy group,
Y is a linear or branched C1-C8 alkylene group optionally substituted by a trifluoromethyl group or by a phenyl ring, or containing a cyclized part having 3 to 6 carbon atoms, or is a group \u2014(CH2)n\u2014W\u2014,
W is an oxygen atom, a group \u2014NH\u2014 or a sulfur atom,
n is 2, 3 or 4,
Z is an optionally partially halogenated C1-C4 alkyl group, trifluoromethyl, \u2014CORa, \u2014CH2\u2014N(R)2, or an aromatic, heteroaromatic or heterocyclic ring selected from phenyl, pyrrolidinyl, pyrrolidinylone, imidazolyl, pyridinyl, pyridinyl oxide, piperidinyl, piperazinyl, pyridazinyl, morpholinyl and indolinylone groups, and optionally substituted by one, two or three identical or different substituents selected from a halogen, a C1-C4 alkyl group, C1-C4 alkoxy, trifluoromethyl, nitro, N(R)2, \u2014CH2\u2014N(R)2, \u2014O\u2014(CH2)n\u2014N(R)2, hydroxyl, cyano, C2-C3 cyanoalkyl, 5-oxo-1,2,4-oxadiazolidinyl and a group of the formula \u2014X\u2014C(R)2p\u2014CORa,
X is a single bond, an oxygen atom, \u2014O\u2014CH2\u2014, a sulfur atom, a group \u2014NR\u2014 or a 1,1-cyclopropylene group,
Ra is OR or N(R)2,
R is a hydrogen atom or a C1-C4 alkyl group, and
p is equal to 0, 1, 2, 3 or 4; and
ii) the pharmaceutically acceptable salts of said compounds of formula (I).
2. A compound according to claim 1, wherein the asymmetric carbon of the indoline group is of S configuration.
3. A compound according to claim 1, wherein R1 is a fluorine atom or a trifluoromethyl group.
4. A compound according to claim 1, wherein
Y is a group \u2014CH2\u2014 or a group \u2014(CH2)2\u2014O\u2014 and
Z is an aromatic ring substituted by a group containing a carboxylic acid group, said aromatic ring optionally containing one or two other substituents selected from a halogen, a C1-C4 alkyl group, preferably methyl, a C1-C4 alkoxy group, preferably methoxy, and a trifluoromethyl group.
5. A pharmaceutical composition comprising a compound according to claim 1 and at least one pharmaceutically acceptable carrier or adjuvant.
6. A method of treating or inhibiting a disorder or disease state selected from the group consisting of neurodegeneration, cardiovascular disease, inflammatory disease, hypercholesterolemia, dyslipidemia, obesity and diabetes in a subject in need thereof, said method comprising administering to said subject a pharmacologically effective amount of a compound according to claim 1.
7. A method according to claim 6, wherein said disorder or disease state is cardiovascular disease, hypercholesterolemia, dyslipidemia or obesity.
8. A method according to claim 6, wherein said disorder or disease state is diabetes.
9. A method according to claim 6, wherein said disorder or disease state is neurodegeneration.
10. A method according to claim 6, wherein said disorder or disease state is inflammatory disease.
11. A process for preparing a compound according to claim 1, said process comprising:
reacting a benzenesulfonyl chloride corresponding to the formula IX
in which:
R1 is a hydrogen atom, a halogen, a C1-C4 alkyl group, a C1-C4 alkoxy group, a trifluoromethyl group or a totally or partially halogenated methoxy group,
R2 is a hydrogen atom, a halogen, a C1-C4 alkyl group or a trifluoromethyl group, and
R3 is a hydrogen atom, a halogen, a C1-C4 alkyl group or a trifluoromethyl group, with the proviso that R1, R2 and R3 are not simultaneously a hydrogen atom,
with an indoline compound corresponding to formula V
in which:
R4 is a hydrogen atom or a C1-C4 alkoxy group,
Y is a linear or branched C1-C8 alkylene group optionally substituted by a trifluoromethyl group or by a phenyl ring, or containing a cyclized part having 3 to 6 carbon atoms, or is a group \u2014(CH2)n\u2014W\u2014,
W is an oxygen atom, a group \u2014NH\u2014 or a sulfur atom,
n is 2, 3 or 4,
Z is an optionally partially halogenated C1-C4 alkyl group, trifluoromethyl, CORa, CH2\u2014N(R)2, or an aromatic, heteroaromatic or heterocyclic ring selected from phenyl, 1-pyrrolidinyl, pyrrolidinylone, 1-imidazolyl, pyridinyl, 1-piperidinyl, 4-alkyl-1-piperazinyl, pyridazinyl, 4-morpholinyl and indolinylone groups, and optionally substituted by one, two or three identical or different substituents selected from a halogen, a C1-C4 alkyl group, C1-C4 alkoxy, trifluoromethyl, nitro, N(R)2, \u2014CH2\u2014N(R)2, \u2014O\u2014(CH2)n\u2014N(R)2, hydroxyl, cyano, C2-C3 cyanoalkyl and a group of the formula \u2014X\u2014C(R)2p\u2014CORa,
X is a single bond, an oxygen atom, a sulfur atom, an NH group or a 1,1-cyclopropylene group,
Ra is OR or N(R)2,
R is a C1-C4 alkyl group, and
p is equal to 0, 1, 2, 3 or 4,
in an anhydrous solvent at room temperature, for 2 to 10 hours, to give a compound corresponding to the formula I
in which R1, R2, R3, R4, Y and Z are as defined above.