1. A Group III nitride semiconductor light-emitting device, comprising:
a substrate including an embossed main surface;
a Group III nitride semiconductor layer formed on the main surface of the substrate; and
non-translucent electrodes which are electrically conducted to the Group III nitride semiconductor layer,
wherein the substrate comprises a heterogeneous substrate having a chemical composition different from that of the Group III nitride semiconductor layer;
wherein the heterogeneous substrate includes a first region including a plurality of protrusions, and a second region including a plurality of protrusions which are arranged at a pitch larger than that of the protrusions in the first region, each of the protrusions of the second region has a hexagonal pyramidal shape,
wherein the second region has a perimeter being included within a region defined by a region perimeter located 6 \u03bcm or less outward from a perimeter of a projection area of each of the non-translucent electrodes as viewed through the main surface of the heterogeneous substrate, and is defined by a region perimeter located 6 \u03bcm or less inward from the perimeter of the projection area,
wherein a portion of the semiconductor layer above the second region exhibits a threading dislocation density higher than that of a portion of the semiconductor layer above the first region, and
wherein light distribution in the second region is larger than light distribution in the first region.
2. The Group III nitride semiconductor light-emitting device according to claim 1, wherein, in the second region, the protrusions located more distant from a boundary between the first region and the second region are arranged at a larger pitch.
3. The Group III nitride semiconductor light-emitting device according to claim 2, wherein a relation of L2=a\xd7L1 and a relation of 1.1\u2266a\u22663 are satisfied, wherein L1 represents a pitch between adjacent protrusions in the first region, and L2 represents a pitch between adjacent protrusions in the second region.
4. The Group III nitride semiconductor light-emitting device according to claim 3, which comprises a transparent electrode, wherein the Group III nitride semiconductor layer includes a p-type contact layer, and the transparent electrode is formed on the p-type contact layer.
5. The Group III nitride semiconductor light-emitting device according to claim 3, wherein at least one of the non-translucent electrodes comprises a pad electrode which is to be electrically conducted to an external electrode.
6. The Group III nitride semiconductor light-emitting device according to claim 5, wherein the non-translucent electrodes comprise a plurality of dot electrodes which are distributed with respect to a light-emitting surface, and one or more wiring electrodes for electrically connecting the dot electrodes to the pad electrodes, the wiring electrodes comprising comb electrodes.
7. The Group III nitride semiconductor light-emitting device according to claim 2, wherein at least one of the non-translucent electrodes comprises a pad electrode which is to be electrically conducted to an external electrode.
8. The Group III nitride semiconductor light-emitting device according to claim 7, wherein the non-translucent electrodes comprise a plurality of dot electrodes which are distributed with respect to a light-emitting surface, and one or more wiring electrodes for electrically connecting the dot electrodes to the pad electrodes, the wiring electrodes comprising comb electrodes.
9. The Group III nitride semiconductor light-emitting device according to claim 2, which comprises a transparent electrode, wherein the Group III nitride semiconductor layer includes a p-type contact layer, and the transparent electrode is formed on the p-type contact layer.
10. The Group III nitride semiconductor light-emitting device according to claim 1, wherein a relation of L2=a\xd7L1 and a relation of 1.1\u2266a\u22663 are satisfied, wherein L1 represents a pitch between adjacent protrusions in the first region, and L2 represents a pitch between adjacent protrusions in the second region.
11. The Group III nitride semiconductor light-emitting device according to claim 10, wherein at least one of the non-translucent electrodes comprises a pad electrode which is to be electrically conducted to an external electrode.
12. The Group III nitride semiconductor light-emitting device according to claim 11, wherein the non-translucent electrodes comprise a plurality of dot electrodes which are distributed with respect to a light-emitting surface, and one or more wiring electrodes for electrically connecting the dot electrodes to the pad electrodes, the wiring electrodes comprising comb electrodes.
13. The Group III nitride semiconductor light-emitting device according to claim 10, which comprises a transparent electrode, wherein the Group III nitride semiconductor layer includes a p-type contact layer, and the transparent electrode is formed on the p-type contact layer.
14. The Group III nitride semiconductor light-emitting device according to claim 1, wherein at least one of the non-translucent electrodes comprises a pad electrode which is to be electrically conducted to an external electrode.
15. The Group III nitride semiconductor light-emitting device according to claim 1, which comprises a transparent electrode, wherein the Group III nitride semiconductor layer includes a p-type contact layer, and the transparent electrode is formed on the p-type contact layer.
16. A Group III nitride semiconductor light-emitting device comprising:
a substrate including an embossed main surface;
a Group III nitride semiconductor layer formed on the main surface of the substrate; and
non-translucent electrodes which are electrically conducted to the Group III nitride semiconductor layer, the non-translucent electrodes comprising a pad electrode, a plurality of dot electrodes which are distributed with respect to a light-emitting surface, and one or more wiring electrodes for electrically connecting the dot electrodes to the pad electrodes, the wiring electrodes comprising comb electrodes,
wherein the substrate comprises a heterogeneous substrate including a chemical composition different from that of the Group III nitride semiconductor layer,
wherein the heterogeneous substrate includes a first region including a plurality of protrusions, and a second region including a plurality of protrusions which are arranged at a pitch larger than that of the protrusions in the first region, and each of the protrusions of the second region has a hexagonal pyramidal shape,
wherein the second region has a perimeter being included within a region defined by a region perimeter located 6 \u03bcm or less outward from a perimeter of a projection area of each of the non-translucent electrodes as viewed through the main surface of the heterogeneous substrate, and is defined by a region perimeter located 6 \u03bcm or less inward from the perimeter of the projection area.
17. A Group III nitride semiconductor light-emitting device, comprising:
a substrate including an embossed main surface;
a Group III nitride semiconductor layer formed on the main surface of the substrate; and
non-translucent electrodes which are electrically conducted to the Group III nitride semiconductor layer,
wherein the substrate comprises a heterogeneous substrate including a chemical composition different from that of the Group III nitride semiconductor layer,
wherein the heterogeneous substrate includes a first region including a plurality of protrusions, and a second region including a plurality of protrusions which are arranged at a pitch larger than that of the protrusions in the first region,
wherein the second region has a perimeter being included within a region defined by a region perimeter located 6 \u03bcm or less outward from a perimeter of a projection area of each of the non-translucent electrodes as viewed through the main surface of the heterogeneous substrate, and is defined by a region perimeter located 6 \u03bcm or less inward from the perimeter of the projection area, and
wherein a region between a projection area of the non-translucent electrodes as viewed through the main surface of the heterogeneous substrate and an edge of the light-emitting device includes the first region.
18. The Group III nitride semiconductor light-emitting device according to claim 17, wherein the first region, the second region, the first region, the second region, and the first region are disposed in order from an edge of the light-emitting device to another edge of the light-emitting device.
19. The Group III nitride semiconductor light-emitting device according to claim 17, wherein the first region is disposed in an outermost portion of the light-emitting device.
20. The Group III nitride semiconductor light-emitting device according to claim 19, wherein, with respect to the first region, the second region is disposed in an inner portion of the light-emitting device.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A CMP method comprising
applying a CMP slurry containing substantially dispersed, solid abrasive material to a substrate;
applying to the substrate a surfactant containing material that exhibits the characteristic of decreasing a settling time for the abrasive material in an aqueous dilution of the slurry by complexing between at least a portion of the abrasive material and the surfactant to form floccule and flocculating at least a majority portion of the abrasive material with the surfactant; and
removing at least some of the abrasive material.
2. The CMP method of claim 1 further comprising polishing the substrate with the slurry before applying the surfactant containing material.
3. The CMP method of claim 1 wherein the abrasive material comprises ceria.
4. The CMP method of claim 1 wherein the surfactant comprises a cationic surfactant.
5. The CMP method of claim 4 wherein the cationic surfactant comprises a quaternary ammonium substituted salt.
6. A CMP method comprising
applying a CMP slurry containing substantially dispersed, solid abrasive material to a substrate;
applying to the substrate a surfactant containing material, the surfactant exhibiting a one-hour settling rate constant of greater than 0.035 for the abrasive material in an aqueous mixture of about 0.1 weight percent surfactant and about 1 weight percent slurry complexing between at least a portion of the abrasive material and the surfactant to form floccule; and
flocculating at least a majority portion of the abrasive material with the surfactant and removing at least some of the abrasive material.
7. The CMP method of claim 6 further comprising polishing the substrate with the slurry before applying the surfactant containing material.
8. The CMP method of claim 6 wherein the abrasive material comprises ceria.
9. The CMP method of claim 6 wherein the settling rate constant is greater than about 0.09.
10. The CMP method of claim 6 wherein the surfactant comprises a cationic surfactant.
11. The CMP method of claim 10 wherein the cationic surfactant comprises a quaternary ammonium substituted salt.
12. A CMP method comprising:
applying a CMP slurry containing a solid, ceria-comprising abrasive material to a substrate;
polishing the substrate with the abrasive material;
applying to the substrate a quaternary ammonium substituted salt surfactant containing material that exhibits the characteristic of decreasing a settling time for the abrasive material in an aqueous dilution of the slurry;
flocculating and complexing the abrasive material with the surfactant; and
removing at least a majority portion of the abrasive material.
13. The CMP method of claim 12 wherein a temperature of the substrate during the flocculating does not exceed about 40 degrees Celsius.
14. The CMP method of claim 12 wherein the quaternary ammonium substituted salt exhibits a one-hour settling rate constant of greater than 0.09 for the abrasive material in an aqueous mixture of about 0.1 weight percent surfactant and about 1 weight percent slurry.
15. The CMP method of claim 12 wherein a concentration of the quaternary ammonium substituted salt in the surfactant containing material is from about 10 micrograms per milliliter (\u03bcgml) to about 10,000 \u03bcgml.
16. The CMP method of claim 12 wherein the quaternary ammonium substituted salt comprises a quaternary ammonium halide.
17. The CMP method of claim 16 wherein the quaternary ammonium halide comprises a cetyltrimethylammonium bromide.
18. The CMP method of claim 16 wherein the quaternary ammonium halide comprises a polyethoxylated quaternary ammonium halide.
19. A CMP method comprising:
applying a CMP slurry containing substantially dispersed, solid abrasive ceria to a substrate;
applying to the substrate a surfactant containing material that exhibits the characteristic of decreasing a settling time for the abrasive ceria in an aqueous dilution of the slurry by complexing between at least a portion of the abrasive ceria and the surfactant to form floccule; and
removing at least some of the floccule containing abrasive ceria.