What is claimed is:
1. A film forming method, comprising the steps of:
(a) coating a resist film for silylation on a surface of an insulation film of a semiconductor substrate;
(b) exposing a pattern on the resist film for silylation;
(c) performing a silylation process with causing the resist film for silylation chemically react with a compound including silicon and forming a silylated layer;
(d) etching the insulation film using the silylated layer as a mask; and
(e) forming a metal film on the silylated layer without removing the silylated layer used as the mask.
2. The film forming method as set forth in claim 1,
wherein the mask is formed with dry etching the silylated layer in the step (d).
3. The film forming method as set forth in claim 1,
wherein a step of hardening the silylated layer with performing at least one of an electron beam processing and an ultraviolet ray processing is provided before the step (d).
4. The film forming method as set forth in claim 2,
wherein a step of hardening the silylated layer with performing at least one of electron beam processing and ultraviolet ray processing is provided after the step (d).
5. The film forming method as set forth in claim 2,
wherein a step of planarizing the film surface with performing a chemical mechanical polishing using the silylated layer as a stopper is provided after the step (e).
6. A film forming apparatus disposed adjacent to an aligner selectively exposing a resist film for silylation, an etching apparatus etching an insulation film using a silylated layer as a mask, and a metal film forming apparatus forming a metal film on the silylated layer being used as the mask without removing thereof, comprising:
a resist film for silylation forming portion forming a resist film for silylation on a surface of an insulation film formed on a surface of a substrate;
a silylated layer forming portion performing a silylation process for forming a silylated layer with causing the resist film for silylation chemically react with a compound including silicon; and
a transfer mechanism transferring the substrate among the resist film for silylation forming portion, the silylated layer forming portion, the aligner, the etching apparatus and the metal film forming apparatus.
7. The film forming apparatus as set forth in claim 6,
wherein the etching apparatus forms the mask with dry etching the silylated layer.
8. The film forming apparatus disposed adjacent to a hardening process apparatus hardening the silylated layer with performing at least one of an electron beam processing and an ultraviolet ray processing, as set forth in claim 6,
wherein the transfer mechanism transfers the substrate to and receives thereof from the hardening process apparatus.
9. The film forming apparatus disposed adjacent to a planarization processing apparatus planarizing a surface of the insulation film with performing a chemical mechanical polishing using the silylated layer as a stopper as set forth in claim 6,
wherein the transfer mechanism transfers the substrate to and receives thereof from the planarization processing apparatus.
10. A film forming apparatus, comprising:
a resist film for silylation forming portion forming a resist film for silylation on an insulation film surface formed on the surface of a substrate;
a silylated layer forming portion performing a silylation process and forming a silylated layer with causing the resist film for silylation chemically react with a compound including silicon;
an aligner selectively exposing the resist film for silylation;
an etching portion etching the insulation film with using the silylated layer as a mask;
a metal film forming portion forming a metal film on the silylated layer without removing the silylated layer used as the mask; and
a transfer mechanism transferring the substrate among the silylated layer forming portion, the aligner, the etching poriton, and the metal film forming portion.
11. The film forming apparatus as set forth in claim 10,
wherein the etching portion forms the mask with dry etching the silylated layer.
12. The film forming apparatus as set forth in claim 10, further comprising:
a hardening process portion hardening the silylated layer with performing at least one of an electron beam processing and an ultraviolet ray processing.
wherein the transfer mechanism further transfers the substrate to and receives thereof from the hardening process portion.
13. The film forming apparatus as set forth in claim 10, further comprising:
a planarization processing portion planarizing the silylated layer with performing a chemical mechanical polishing using the silylated layer as a stopper.
wherein the transfer mechanism further transfers the substrate to and receives thereof from the planarization processing portion.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A secondary para-phenylene diamine chosen from compounds of formula (I) and the addition salts thereof:
wherein:
R is chosen from linear and branched C2-C18 alkyl radicals comprising from 2 to 4 hydroxyl groups, wherein the alkyl radicals are unsubstituted or substituted with at least one entity chosen from amino, mono(C1-C15)alkylamino, di(C1-C15)alkylamino, (C1-C15)alkylcarbonyl, amido, mono(C1-C15)alkylaminocarbonyl, and di(C1-C15)alkylaminocarbonyl groups, and wherein the alkyl radicals are interrupted with at least one heteroatom chosen from oxygen and nitrogen;
R1 is chosen from hydrogen, C1-C5 alkyl radicals, C1-C15 alkoxy radicals, hydroxy((C1-C15)alkoxy) radicals, (C1-C15)alkoxy(C1-C15)alkyl radicals, C1-C15 monohydroxyalkyl radicals, C1-C15 polyhydroxyalkyl radicals, and halogen atoms; and
n is an integer ranging from 1 to 4;
with the proviso that the compound of formula (I) is not N-(2,3-dihydroxypropyl)-para-phenylenediamine.
2. The secondary para-phenylene diamine according to claim 1, wherein R1 is chosen from hydrogen, and C1-C6 alkyl and C1-C6 alkoxy radicals.
3. The secondary para-phenylene diamine according to claim 1, wherein the compound of formula (I) is chosen from:
2-2-(4-Aminophenylamino)ethyl-(2-hydroxyethyl)aminoethanol;
2-2-(4-Amino-2-methylphenylamino)ethyl-(2-hydroxyethyl)aminoethanol;
2-2-(4-Amino-3-methylphenylamino)ethyl-(2-hydroxyethyl)aminoethanol;
3-3-4-Aminophenylamino)propoxylpropane-1,2-diol; and
2-4-(4-Aminophenylamino)butyl-(2-hydroxyethyl)aminoethanol.
4. The secondary para-phenylene diamine according to claim 1, wherein the addition salts of the compounds of formula (I) are acid addition salts chosen from hydrochlorides, hydrobromides, sulfates, citrates, succinates, tartrates, lactates, tosylates, benzenesulfonates, phosphates, and acetates.
5. A cosmetic composition for dyeing keratin fibers,: comprising, in a medium that is suitable for dyeing, at least one compound chosen from those of formula (I) and the addition salts thereof:
wherein:
R is chosen from linear and branched C2-C18 alkyl radicals comprising from 2 to 4 hydroxyl groups, wherein the alkyl radicals are unsubstituted or substituted with at least one entity chosen from amino, mono(C1-C15)alkylamino, di(C1-C15)alkylamino, (C1-C15)alkylcarbonyl, amido, mono(C1-C15)alkylaminocarbonyl, and di(C1-C15)alkylaminocarbonyl groups, and wherein the alkyl radicals are interrupted with at least one heteroatom chosen from oxygen and nitrogen;
R1, is chosen from hydrogen, C1-C15 alkyl radicals, C1-C15 alkoxy radicals, hydroxy((C1-C15)alkoxy) radicals, (C1-C15)alkoxy(C1-C15)alkyl radicals, C1-C15 monohydroxyalkyl radicals, C1-C15 polyhydroxyalkyl radicals, and halogen atoms; and
n is an integer ranging from 1 to 4;
with the proviso that the compound of formula (I) is not N-(2,3-dihydroxypropyl)-para-phenylenediamine.
6. The cosmetic composition according to claim 5, wherein R1 is chosen from hydrogen, and C1-C6 alkyl and C1-C6 alkoxy radicals.
7. The cosmetic composition according to claim 5, wherein the compound of formula (I) is chosen from:
2-(4-Aminophenylamino)ethyl-(2-hydroxyethyl)aminoethanol;
2-2-(4-Amino-2-methylphenylamino)ethyl-(2-hydroxyethyl)aminoethanol;
2-2-(4-Amino-3-methylphenylamino)ethyl-(2-hydroxyethyl)aminoethanol
3-3-4-Aminophenylamino)propoxylpropane-1,2-diol; and
2-4-(4-Aminophenylamino)butyl-(2-hydroxyethyl)aminoethanol.
8. The composition according to claim 5, wherein the addition salts of the compounds of formula (I) are acid addition salts chosen from hydrochlorides, hydrobromides, sulfates, citrates, succinates, tartrates, lactates, tosylates, benzenesulfonates, phosphates and acetates.
9. The composition according to claim 5, wherein the at least one: compound of formula (I) is present in an amount ranging from 0.0001% to 20% by weight, relative to the total weight of the composition.
10. The composition according to claim 5, wherein the medium that is suitable for dyeing comprises water or comprises a mixture of water and of at least one organic solvent chosen from branched and unbranched C1-C4 lower alcohols; polyols and polyol ethers; and aromatic alcohols.
11. The composition according to claim 5, further comprising at least one cosmetic adjuvant chosen from antioxidants, penetrating agents, sequestering agents, fragrances, buffers, dispersants, surfactants, conditioning agents, film-forming agents, polymers, ceramides, preserving agents, nacreous agents, opacifiers, vitamins and provitamins.
12. The composition according to claim 11, wherein the at least one cosmetic adjuvant is present, in an amount for each of them, ranging from 0.01% to 20% by weight, relative to the total weight of the composition.
13. The composition according to claim 5, further comprising at least one oxidation coupler chosen from meta-phenylenediamines, meta-aminophenols meta-diphenols, naphthalenetased couplers, heterocyclic couplers, and the addition salts thereof.
14. The composition according to claim 13, wherein the at least one oxidation coupler is present in an amount ranging from 0.0001% to 20% by weight, relative to the total weight of the composition.
15. The composition according to claim 5, further comprising at least one additional oxidation base other than those of formula (I), chosen from para-phenylenediamines, bis(phenyl)alkylenediamines, para-aminophenols, ortho-aminophenols, heterocyclic bases, and the addition salts thereof.
16. The composition according to claim 15, wherein the at least one additional oxidation base is present in an amount ranging from 0.0001% to 20% by weight, relative to the total weight of the composition.
17. The composition according to claim 5, further comprising at least one direct dye chosen from natural and cationic direct dyes.
18. A ready-to-use cosmetic composition, comprising, in a medium that is suitable for dyeing, at least one compound chosen from those of formula (I) and the addition salts thereof:
wherein:
R is chosen from linear and branched C2-C18 alkyl radicals comprising from 2 to 4 hydroxyl groups, wherein the alkyl radicals are unsubstituted or substituted with at least one entity chosen from amino, mono(C1-C15)alkylamino, di(C1-C15)alkylamino, (C1-C15)alkylcarbonyl, amido, mono(C1-C15)alkylaminocarbonyl, and di(C1-C15)alkylaminocarbonyl groups, and wherein the alkyl radicals are interrupted with at least one heteroatom chosen from oxygen and nitrogen;
R1 is chosen from hydrogen, C1-C15 alkyl radicals, C1-C15 alkoxy radicals, hydroxy((C1-C15)alkoxy) radicals, (C1-C15)alkoxy(C1-C15)alkyl radicals, C1-C15 monohydroxyalkyl radicals, C1-C15 polyhydroxyalkyl radicals, and halogen atoms; and
n is an integer ranging from 1 to 4;
with the proviso that the compound of formula (I) is not N-(2,3-dihydroxypropyl)-para-phenylenediamine, and at least one oxidizing agent chosen from hydrogen peroxide, urea peroxide, alkali metal bromates, persalts, peracids, and oxidase enzymes.