1. A memory device comprising:
a flag cell settable between a multi bit per cell position and a single bit per cell position;
a memory cell associated with the flag cell, the memory cell responsive to the flag cell position to provide a multi bit output when the flag cell is in the multi bit per cell position and a single bit output when the flag cell is in the single bit per cell position.
2. The memory device of claim 1, wherein the memory cell is a step up voltage flash cell.
3. The memory device of claim 1, wherein the flag cell is associated with a plurality of memory cells, each of the plurality of memory cells responsive to the flag cell to provide a multi bit per cell output when the flag cell is in the multi bit per cell position and a single bit per cell output when the flag cell is in the single bit per cell position.
4. The memory device of claim 1, the memory cell comprising a memory device of the group of memory devices consisting of a read only memory (ROM), an erasable programmable read only memory (EPROM), a conventional electrically erasable programmable read only memory (EEPROM), and a dynamic random access memory (DRAM).
5. The memory device of claim 1, the flag cell comprising a multi bit per cell cell of the memory.
6. The memory device of claim 1, wherein the memory cell is a cell of an array of multi bit per cell cells.
7. The memory device of claim 1, wherein the flag cell comprises a multi bit per cell cell of an array of multi bit per cell cells.
8. The memory device of claim 1 comprising a second flag cell and a memory cell associated with the second flag cell, the second flag cell being settable between a multi bit per cell position and a single bit per cell position, and the memory cell associated with the second flag cell having a multi bit output when the flag cell is in the multi bit per cell position and a single bit output when the flag cell is in the single bit per cell position.
9. The memory device of claim 1, the memory cell having a single bit output specific voltage threshold for determining the single bit output and a count mask to overwrite the multi bit output to provide the single bit output when the flag cell is in the single bit per cell position.
10. An integrated circuit comprising the memory device of claim 1.
11. A semiconductor device comprising the memory device of claim 1.
12. A method of reading a memory cell, the method comprising:
reading a flag cell, the flag cell being settable between a multi bit per cell position and a single bit per cell position; and
reading a memory cell associated with the flag cell and providing an output, the output being a multi bit output when the flag cell is in the multi bit per cell position and a single bit output when the flag cell is in the single bit per cell position.
13. The method of claim 12, wherein reading a memory cell comprises reading a single bit output specific voltage threshold of the memory cell when the flag cell is in the single bit per cell position.
14. The method of claim 12, wherein providing an output comprises using a count mask to overwrite a multi bit output to provide a single bit output when the flag cell is in the single bit per cell position.
15. The method of claim 12, wherein reading a memory cell comprises reading a plurality of memory cells associated with the flag cell and providing an output comprises providing an output corresponding to each memory cell of the plurality of memory cells as a multi bit output when the flag cell is in the multi bit per cell position and a single bit output when the flag cell is in the single bit per cell position.
16. The method of claim 12, comprising reading a second flag cell, the second flag cell being settable between a multi bit per cell position and a single bit per cell position; and
reading a second memory cell associated with the second flag cell and providing a second output, the second output being a multi bit output when the second flag cell is in the multi bit per cell position and a single bit output when the second flag cell is in the single bit per cell position.
17. A control program for a controller associated with a memory device, the control program for reading a memory cell of the memory device, the control program comprising:
a first routine for reading a flag cell, the flag cell being settable between a multi bit per cell position and a single bit per cell position;
a second routine for reading a memory cell associated with the flag cell; and
a third routine for providing an output, the output being a multi bit output when the flag cell is in the multi bit per cell position and a single bit output when the flag cell is in the single bit per cell position.
18. The control program of claim 17, wherein reading a memory cell comprises reading a single bit output specific voltage threshold of the memory cell when the flag cell is in the single bit per cell position.
19. The control program of claim 17, wherein providing an output comprises using a count mask to overwrite a multi bit output to provide a single bit output when the flag cell is in the single bit per cell position.
20. The control program of claim 17, comprising:
a fourth routine for reading a second flag cell, the second flag cell being settable between a multi bit per cell position and a single bit per cell position;
a fifth routine for reading a second memory cell associated with the second flag cell; and
a sixth routine for providing a second output, the second output being a multi bit output when the second flag cell is in the multi bit per cell position and a single bit output when the second flag cell is in the single bit per cell position.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A liquid container closure comprising
a cap including a top wall having a perimeter edge, a grip support extending around the top wall, and an annular skirt depending from the grip support and cooperating with the top wall and the grip support to define an interior region of the cap, the grip support and the perimeter edge of the top wall cooperating to form an annular channel, the grip support being formed to include extrusion holes providing passageways communicating with the annular channel and the interior region of the cap,
a monolithic compliant member including a cap liner located in the interior region of the cap to contact the top wall, a grip ring located in the annular channel to lie outside of the interior region of the cap, and extrusion posts coupled at one end to the cap liner and at another end to the grip ring and arranged to extend through the extrusion holes formed in the grip support to tether the cap liner to the grip ring and retain the monolithic compliant member on the cap
wherein the annular skirt includes an annular upper edge, the grip support includes an annular lateral wall extending away from the perimeter edge of the top wall and mating with the annular upper edge of the annular skirt, and wherein the perimeter edge of the top wall and an exterior surface of the annular lateral wall cooperate to define a boundary of the annular channel formed in the cap and engage the grip ring located in the annular channel, and
wherein the annular lateral wall is formed to include the extrusion holes.
2. The closure of claim 1, wherein the extrusion holes are formed to lie in circumferentially spaced-apart relation to one another in a circular pattern around the perimeter edge of the top wall.
3. The closure of claim 1, wherein the extrusion posts are arranged to extend vertically to lie in spaced-apart parallel relation to one another.
4. The closure of claim 1, wherein the annular skirt is arranged to extend in a vertical direction and the annular lateral wall is arranged to extend in a horizontal direction to lie in orthogonal relation to the annular skirt.
5. A liquid container closure comprising
a cap including a top wall having a perimeter edge, a grip support extending around the top wall, and an annular skirt depending from the grip support and cooperating with the top wall and the grip support to define an interior region of the cap, the grip support and the perimeter edge of the top wall cooperating to form an annular channel, the grip support being formed to include extrusion holes providing passageways communicating with the annular channel and the interior region of the cap,
a monolithic compliant member including a cap liner located in the interior region of the cap to contact the top wall, a grip ring located in the annular channel to lie outside of the interior region of the cap, and extrusion posts coupled at one end to the cap liner and at another end to the grip ring and arranged to extend through the extrusion holes formed in the grip support to tether the cap liner to the grip ring and retain the monolithic compliant member on the cap
wherein the annular skirt includes an annular upper edge, the grip support includes an annular lateral wall extending away from the perimeter edge of the top wall and mating with the annular upper edge of the annular skirt, and wherein the perimeter edge of the top wall and an exterior surface of the annular lateral wall cooperate to define a boundary of the annular channel formed in the cap and engage the grip ring located in the annular channel, and
wherein the annular lateral wall terminates at an outer edge, the grip support also includes an annular upright wall extending from the outer edge of the annular lateral wall downwardly to mate with the annular upper edge of the annular skirt, the annular upper edge of the annular skirt, the perimeter edge of the top wall, exterior surfaces of the annular lateral and upright walls, and the annular upper edge of the annular skirt cooperate to define a boundary of the annular channel and wherein each of the annular skirt and annular upright wall is arranged to extend in a vertical direction, each of the top wall and the annular lateral wall is arranged to extend in a horizontal direction to lie in orthogonal relation to the annular upright wall, and one of the annular upright and annular lateral walls is formed to include the extrusion holes.
6. A liquid container closure comprising
a cap including a top wall having a perimeter edge, a grip support extending around the top wall, and an annular skirt depending from the grip support and cooperating with the top wall and the grip support to define an interior region of the cap, the grip support and the perimeter edge of the top wall cooperating to form an annular channel, the grip support being formed to include extrusion holes providing passageways communicating with the annular channel and the interior region of the cap,
a monolithic compliant member including a cap liner located in the interior region of the cap to contact the top wall, a grip ring located in the annular channel to lie outside of the interior region of the cap, and extrusion posts coupled at one end to the cap liner and at another end to the grip ring and arranged to extend through the extrusion holes formed in the grip support to tether the cap liner to the grip ring and retain the monolithic compliant member on the cap
wherein the grip support includes a lateral wall arranged to extend away from the perimeter edge of the top wall and formed to include the extrusion holes.
7. The closure of claim 6, wherein the extrusion posts are arranged to extend vertically to lie in spaced-apart parallel relation to one another.
8. The closure of claim 6, wherein the extrusion posts extend along radially outwardly extending lines intersecting a central vertical axis extending through the top wall and extend horizontally in circumferentially spaced-apart parallel relation to one another.