1. A wafer-scale nanometrology system for sensing position of a nanofabrication element when illuminated by a patterned optical projection defining a grid or position measuring gauge, comprising:
(a) a frequency stabilized laser emitter configured to generate a laser emission at a selected frequency, wherein said laser emission forms a diverging beam configured to illuminate a selected area occupied by a target fabrication object having a proximal surface;
(b) an optical pattern generator configured to be illuminated by said laser emission and generate a patterned optical projection grid for projection upon the target fabrication object’s proximal surface;
(c) a movable nanofabrication element carrying an optical sensor array on a selected surface, said sensor array being configured to detect at least a portion of said patterned optical projection grid, and, in response to said detection, is configured to generate projection grid position data; and
(d) a computing device configured to receive said projection grid position data and programmed to correlate said patterned optical projection grid and said projection grid position data to determine a location for said nanofabrication element relative to said fabrication object’s proximal surface.
2. The wafer-scale nanometrology system of claim 1, further comprising: a stage or support configured to receive a target fabrication object in the form of a substantially planar semiconductor manufacturing wafer.
3. The wafer-scale nanometrology system of claim 1, wherein said optical pattern generator comprises a diffraction grating defined in an optically transmissive wafer.
4. The wafer-scale nanometrology system of claim 1, wherein said movable nanofabrication element carrying an optical sensor array on a selected surface comprises a scanning probe carrying a photodetector array.
5. The wafer-scale nanometrology system of claim 1, wherein said movable nanofabrication element carrying an optical sensor array on a selected surface comprises a scanning probe carrying a CMOS imager with a two dimensional array of pixels.
6. The wafer-scale nanometrology system of claim 1, wherein said frequency stabilized laser emitter comprises a surface emitting laser, a beam splitter and a beam expander.
7. The wafer-scale nanometrology system of claim 6, wherein said frequency stabilized laser emitter further comprises a an atom vapor cell configured such that the surface emitting laser locks to an absorption line of atom vapor such as that of rubidium or cesium.
8. The wafer-scale nanometrology system of claim 1, wherein said optical pattern generator comprises a diffraction grating defined in an optically transmissive wafer as an optical grid pattern which generates a precise patterned optical projection between said optical pattern generator and said target fabrication object’s proximal surface, to provide a precise optical gauge which provides absolute three dimensional position information for said nanofabrication element.
9. The wafer-scale nanometrology system of claim 8, wherein said optical pattern generator comprises a diffraction grating defined in an optically transmissive wafer as a Penrose tile vertices or otherwise quasiperiodic pattern which generates a spatially unique set of dense spots in space, and thereby generates a precise patterned optical projection between said optical pattern generator and said target fabrication object’s proximal surface, to provide a precise optical gauge which provides absolute three dimensional position information for said nanofabrication element.
10. A method for sensing position of a nanofabrication element, comprising:
(a) generating a diverging laser emission at a selected frequency, wherein said laser emission forms a diverging beam;
(b) illuminating a selected area occupied by a target fabrication object having a proximal surface;
(c) providing an optical pattern generator, and illuminating said optical pattern generator with said laser emission
(d) projecting a patterned optical projection grid upon the target fabrication object’s proximal surface;
(e) providing a movable nanofabrication element carrying an optical sensor array on a selected surface
(f) detecting at least a portion of said patterned optical projection grid when projected upon said movable nanofabrication element’s optical sensor array, and, in response to said detection, generating projection grid position data; and
(g) providing a computing device configured to receive said projection grid position data; and
(h) cross correlating said patterned optical projection grid and said projection grid position data to determine a location for said nanofabrication element relative to said fabrication object’s proximal surface.
11. The method for sensing position of a nanofabrication element of claim 10, further comprising using an imaging chip to sense the optical projection grid to determine the position of the imaging chip.
12. The method for sensing position of a nanofabrication element of claim 11, further comprising determining the x,y,z position of the imaging chip using cross-correlation of the imaged pattern and the optical projection grid, with respect to center of the grating pattern.
13. The method for sensing position of a nanofabrication element of claim 11, further comprising placing a plurality of imaging chips on multiple locations, both on probe and on fabrication object’s proximal surface to determine relative positions with respect to markers on surface.
14. The method for sensing position of a nanofabrication element of claim 11, further comprising:
modulating the patterned optical projection at a selected modulation frequency, to generate a modulated projection;
detecting said modulated projection in the pattern, and heterodyning said detected signal.
15. The method for sensing position of a nanofabrication element of claim 11, wherein step (d) comprises projecting a precise patterned optical projection between said optical pattern generator and said target fabrication object’s proximal surface, to provide a precise optical gauge which provides absolute three dimensional position information for said nanofabrication element.
16. A method for detecting the position of a fabrication element, comprising:
(a) generating an optical emission;
(b) providing an optical pattern generator, and illuminating said optical pattern generator with said optical emission;
(c) providing an optical sensor array;
(d) projecting a patterned optical projection upon the optical sensor array;
(e) providing a fabrication element and a fabrication mount to which a target fabrication object can be secured, wherein the fabrication element and the fabrication mount can move relative to one another, and wherein the position of the projected optical pattern relative to one and the position of the optical sensor array relative to the other is known;
(f) detecting at least a portion of said patterned optical projection when projected upon said optical sensor array, and, in response to said detection, generating projection pattern position data;
(g) providing a computing device configured to receive said projection pattern position data; and
(h) cross correlating said patterned optical projection and said projection pattern position data to determine a location for said fabrication element relative to said fabrication mount and to any target fabrication object secured thereto.
17. The method for sensing position of a nanofabrication element of claim 16, wherein step (b) comprises projecting a precise patterned optical projection between said optical pattern generator and said target fabrication object’s proximal surface, to provide a precise optical gauge which provides absolute three dimensional position information.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device, comprising:
a transistor including a channel film; and
a capacitor that is spaced apart from the transistor, the capacitor including
a first electrode including, in order, a first conductive film, a first insulating film provided on the first conductive film, and an oxide semiconductor film provided on the insulating film, the first conductive film and the oxide semiconductor film being electrically connected by a wiring,
a second insulating film, and
a second electrode,
wherein the channel film of the transistor and the oxide semiconductor film are made of the same material.
2. The semiconductor device according to claim 1, wherein
the first conductive film is provided in a same layer as a gate electrode of the transistor, and the oxide semiconductor film is provided in a same layer as a channel film of the transistor, and
the first insulating film extends between the gate electrode and the channel film.
3. The semiconductor device according to claim 2, wherein
the gate electrode of the transistor and the first conductive film are made of a same material.
4. The semiconductor device according to claim 1, wherein the first conductive film includes a metal material.
5. The semiconductor device according to claim 1, wherein the first conductive film has a potential that is same as a potential of the oxide semiconductor film.
6. A display unit, comprising:
a display layer; and
a semiconductor device configured to drive the display layer, the semiconductor device including
a transistor including a channel film, and
a capacitor that is spaced apart from the transistor, the capacitor including
a first electrode including, in order, a first conductive film, a first insulating film provided on the first conductive film, and an oxide semiconductor film provided on the insulating film, the first conductive film and the oxide semiconductor film being electrically connected by a wiring,
a second insulating film, and
a second electrode,
wherein the channel film of the transistor and the oxide semiconductor film are made of the same material.
7. The display unit according to claim 6, wherein the oxide semiconductor film and the first conductive film face each other with the display layer interposed in between.
8. The display unit according to claim 7, wherein the display layer is an organic layer that includes a luminescent layer.
9. The display unit according to claim 7, wherein
the semiconductor device includes a capacitor, and
the oxide semiconductor film and the first conductive film serve as an electrode of the capacitor.
10. An electronic apparatus provided with a display unit, the display unit being provided with a display layer and a semiconductor device configured to drive the display layer, the semiconductor device comprising:
a transistor including a channel film; and
a capacitor that is spaced apart from the transistor, the capacitor including
a first electrode including, in order, a first conductive film, a first insulating film provided on the first conductive film, and an oxide semiconductor film provided on the insulating film, the first conductive film and the oxide semiconductor film being electrically connected by a wiring,
a second insulating film, and
a second electrode,
wherein the channel film of the transistor and the oxide semiconductor film are made of the same material.