1. A solution for extracting RNA from a biological sample containing RNA and at least DNA, said solution comprising:
(a) phenol in an amount of more than 50% by volume based on the total amount of said solution;
(b) a polyol in an amount of 3 to 10% by volume based on the total amount of said solution;
(c) a guanidinium salt at a concentration of 0.5 to 2.0 M based on the total amount of said solution;
(d) a thiocyanate at a concentration of 0.1 to 0.5 M based on the total amount of said solution; and
(e) a buffer for maintaining the pH of said solution at 4 to 6.
2. The solution according to claim 1, wherein the phenol concentration is 55 to 65% by volume based on the total amount of said solution.
3. The solution according to claim 1, further comprising an organic solvent for separating an aqueous layer.
4. The solution according to claim 1, wherein said biological sample is a culture liquid of cultured cells.
5. The solution according to claim 1, wherein said biological sample is a body fluid component of an organism.
6. The solution according to claim 1, wherein said biological sample is a blood component of an organism.
7. A method for extracting RNA from a biological sample containing RNA and at least DNA, said method comprising the steps of:
homogenizing said biological sample together with a solution comprising:
(a) phenol in an amount of more than 50% by volume based on the total amount of said solution;
(b) a polyol in an amount of 3 to 10% by volume based on the total amount of said solution;
(c) a guanidinium salt at a concentration of 0.5 to 2.0 M based on the total amount of said solution;
(d) a thiocyanate at a concentration of 0.1 to 0.5 M based on the total amount of said solution; and
(e) a buffer for maintaining the pH of said solution at 4 to 6;
mixing the obtained homogenate with an organic solvent for separation of an aqueous layer;
centrifuging the obtained mixture; and
recovering an RNA-containing aqueous layer produced by the centrifugation.
8. A method for extracting RNA from a biological sample containing RNA and at least DNA, said method comprising the steps of:
homogenizing said biological sample together with a solution comprising:
(a) phenol in an amount of more than 50% by volume based on the total amount of said solution;
(b) a polyol in an amount of 3 to 10% by volume based on the total amount of said solution;
(c) a guanidinium salt at a concentration of 0.5 to 2.0 M based on the total amount of said solution;
(d) a thiocyanate at a concentration of 0.1 to 0.5 M based on the total amount of said solution;
(e) a buffer for maintaining the pH of said solution at 4 to 6; and
(f) an organic solvent for separation of an aqueous layer;
centrifuging the obtained homogenate; and
recovering an RNA-containing aqueous layer produced by the centrifugation.
9. The method according to claim 7 or 8, wherein the phenol concentration is 55 to 65% by volume based on the total amount of said solution of (a) to (e).
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for manufacturing a single-crystal silicon solar cell in which at least a metal substrate, a single-crystal silicon layer as a light conversion layer, and a transparent protective film are laminated and the transparent protective film side serves as a light receiving surface, the method comprising the steps of:
preparing the metal substrate and a single-crystal silicon substrate which is of a first conductivity type;
implanting at least one of a hydrogen ion and a rare gas ion into the single-crystal silicon substrate to form an ion implanted layer;
forming a transparent insulator layer on the metal substrate;
performing a surface activation treatment with respect to at least one of the ion implanted surface of the single-crystal silicon substrate and a surface of the transparent insulator layer on the metal substrate;
bonding the ion implanted surface of the single-crystal silicon substrate to the surface of the transparent insulator layer on the metal substrate;
giving an impact shock to the ion implanted layer and mechanically delaminating the single-crystal silicon substrate to provide the single-crystal silicon layer;
forming a plurality of diffusion regions which are of a second conductivity type different from the first conductivity type in the delaminated surface side of the single-crystal silicon layer and forming a plurality of p-n junctions in at least a plane direction so that a plurality of first conductivity type regions and the plurality of second conductivity type regions are present in the delaminated surface of the single-crystal silicon layer;
forming a plurality of first individual electrodes on the plurality of first conductivity type regions of the single-crystal silicon layer and forming a plurality of second individual electrodes on the plurality of second conductivity type regions of the same;
forming a first collecting electrode connecting the plurality of first individual electrodes and a second collecting electrode connecting the plurality of second individual electrodes; and
forming a transparent protective film that covers the plurality of first conductivity type regions and the plurality of second conductivity type regions.
2. The method for manufacturing a single-crystal silicon solar cell according to claim 1, wherein the metal substrate has a reflectivity of 60% or above with respect to a visible light.
3. The method for manufacturing a single-crystal silicon solar cell according to claim 1, wherein the transparent insulator layer contains at least one of a silicon oxide, a silicon nitride, and an aluminum oxide.
4. The method for manufacturing a single-crystal silicon solar cell according to claim 2, wherein the transparent insulator layer contains at least one of a silicon oxide, a silicon nitride, and an aluminum oxide.
5. The method for manufacturing a single-crystal silicon solar cell according to claim 1, wherein the surface activation treatment is at least one of a plasma treatment and an ozone treatment.
6. The method for manufacturing a single-crystal silicon solar cell according to claim 4, wherein the surface activation treatment is at least one of a plasma treatment and an ozone treatment.
7. The method for manufacturing a single-crystal silicon solar cell according to claim 1, wherein a depth of the ion implantation is set to fall within the range of 2 \u03bcm to 50 \u03bcm from the ion implanted surface.
8. The method for manufacturing a single-crystal silicon solar cell according to claim 6, wherein a depth of the ion implantation is set to fall within the range of 2 \u03bcm to 50 \u03bcm from the ion implanted surface.
9. The method for manufacturing a single-crystal silicon solar cell according to claim 1, wherein the transparent insulator layer has light scattering properties.
10. The method for manufacturing a single-crystal silicon solar cell according to claim 8, wherein the transparent insulator layer has light scattering properties.
11. The method for manufacturing a single-crystal silicon solar cell according to claim 1, wherein the transparent protective film has light scattering properties.
12. The method for manufacturing a single-crystal silicon solar cell according to claim 10, wherein the transparent protective film has light scattering properties.
13. A single-crystal silicon solar cell manufactured by the method for manufacturing a single-crystal silicon solar cell according to claim 1.
14. A single-crystal silicon solar cell, wherein at least a metal substrate, a transparent insulator layer, a single-crystal silicon layer, and a transparent protective film are sequentially laminated, a plurality of first conductivity type regions and a plurality of second conductivity type regions are formed in a surface of the single-crystal silicon layer in the transparent protective film side, a plurality of p-n junctions are formed in at least a plane direction, a plurality of first individual electrodes are respectively formed on the plurality of first conductivity type regions of the single-crystal silicon layer, a plurality of second individual electrodes are respectively formed on the plurality of second conductivity type regions of the same, and a first collecting electrode connecting the plurality of first individual electrodes and a second collecting electrode connecting the plurality of second individual electrodes are formed.
15. The single-crystal silicon solar cell according to claim 14, wherein the metal substrate has a reflectivity of 60% or above with respect to a visible light.
16. The single-crystal silicon solar cell according to claim 14, wherein the transparent insulator layer contains at least one of a silicon oxide, a silicon nitride, and an aluminum oxide.
17. The single-crystal silicon solar cell according to claim 15, wherein the transparent insulator layer contains at least one of a silicon oxide, a silicon nitride, and an aluminum oxide.
18. The single-crystal silicon solar cell according to claim 14, wherein a film thickness of the single-crystal silicon layer falls within the range of 2 \u03bcm to 50 \u03bcm.
19. The single-crystal silicon solar cell according to claim 17, wherein a film thickness of the single-crystal silicon layer falls within the range of 2 \u03bcm to 50 \u03bcm.
20. The single-crystal silicon solar cell according to claim 14, wherein the transparent insulator layer has light scattering properties.
21. The single-crystal silicon solar cell according to claim 19, wherein the transparent insulator layer has light scattering properties.
22. The single-crystal silicon solar cell according to claim 14, wherein the transparent protective film has light scattering properties.
23. The single-crystal silicon solar cell according to claim 21, wherein the transparent protective film has light scattering properties.