1. A compound of the formula:
wherein:
R1 is hydroxy or methoxy;
R2 and R3 are independently hydrogen or methyl.
2. The compound of claim 1, wherein R1 is hydroxy.
3. The compound of claim 1, wherein R1 is methoxy.
4. The compound of claim 1, wherein R2 is hydrogen.
5. The compound of claim 1, wherein R2 is methyl.
6. The compound of claim 1, wherein R3 is hydrogen.
7. The compound of claim 1, wherein R3 is methyl.
8. The compound of claim 1, wherein the compound is
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming a pattern using a chemically amplified resist composition, said method comprising:
forming an underlayer film on a support using an underlayer film-forming material, forming a hard mask on said underlayer film using a silicon-based hard mask-forming material, forming a first resist film by applying a chemically amplified positive resist composition to said hard mask, forming a first resist pattern by selectively exposing said first resist film through a first mask pattern and then performing developing, forming a first pattern by etching said hard mask using said first resist pattern as a mask,
forming a second resist film by applying a chemically amplified positive silicon-based resist composition to said first pattern and said underlayer film, forming a second resist pattern by selectively exposing said second resist film through a second mask pattern and then performing developing, and forming a second pattern by etching said underlayer film using said first pattern which is formed by etching said hard mask using said first resist pattern as a mask and said second resist pattern as a mask.
2. A pattern-forming method according to claim 1, wherein
said chemically amplified positive silicon-based resist composition comprises a resin component (A) that exhibits increased alkali solubility under action of acid and an acid generator component (B) that generates acid upon exposure, and
said resin component (A) comprises a resin (A1) containing a structural unit (a1) represented by general formula (a1) shown below and a structural unit (a2) represented by general formula (a2) shown below:
\u2003wherein R1 is an acid-decomposable group represented by general formula (I) shown below:
\u2014(R2)g\u2014L\u2014(R3)h\u2014Z\u2003\u2003(I)
\u2003wherein R2 and R3 each independently represents a linking group; L represents a group selected from the group consisting of linear or branched alkylene groups of 1 to 10 carbon atoms, linear or branched fluoroalkylene groups of 2 to 20 carbon atoms, substituted or unsubstituted arylene groups, substituted or unsubstituted cyclic alkylene groups, and substituted or unsubstituted alkarylene groups; Z represents an acid-dissociable group; g represents 0 or 1; and h represents 0 or 1.
3. A pattern-forming method according to claim 1 or claim 2, wherein said first mask pattern is used as said second mask pattern, and said second resist film is selectively exposed with said first mask pattern provided in a different location from that used for selective exposure of said first resist film.