What is claimed is:
1. A semiconductor device comprising:
a base region of a first conducting type formed on a collector layer of a second conducting type;
a trench provided in the base region;
an emitter region of the second conducting type formed adjacent to a bottom portion of the trench;
a sidewall provided on an inside wall of the trench; and
an electrode in contact with the whole surface of the base region excluding the trench.
2. A semiconductor device comprising:
a base region of a first conducting type formed on a semiconductor substrate which serves as a collector layer of a second conducting type;
a trench provided in the base region;
an emitter region of the second conducting type formed adjacent to a bottom portion of the trench;
a sidewall provided on an inside wall of the trench;
an emitter electrode filling the trench and in contact with the emitter region;
a base electrode layer in contact with the whole surface of the base region excluding the trench;
an insulating film covering the base electrode layer; and
a base electrode provided on the insulating film and in contact with the base electrode layer.
3. The semiconductor device according to claim 2, wherein the trench is shallower than the base region.
4. The semiconductor device according to claim 2, wherein the trench has a shape so that the inside wall has an slope so that an angle created by a line tangent to the slope and a surface of the semiconductor substrate becomes gradually smaller in a direction from the trench bottom portion to the semiconductor substrate surface.
5. The semiconductor device according to claim 2, wherein the base electrode layer is formed of polysilicon.
6. The semiconductor device according to claim 2, wherein the base electrode layer is formed of silicide.
7. The semiconductor device according to claim 2, wherein the base electrode layer is formed of a multi-layer film comprising polysilicon and silicide.
8. The semiconductor device according to claim 2, wherein the insulating film is formed of an oxide film or a multi-layer film comprising an oxide film and a nitride film.
9. A method for manufacturing a semiconductor device comprising the steps of:
forming a base region of a first conducting type on a surface of a collector layer of a second conducting type;
forming a base electrode layer on a surface of the base region and forming an insulating film on a surface of the base electrode layer;
forming a trench, which does not reach the collector layer, in the base region by creating an opening at a part of the base electrode layer and the insulating film and forming a sidewall on an inside wall of the trench;
forming a polysilicon layer containing impurities for emitter diffusion inside the trench;
forming an emitter region by diffusing the impurities of the polysilicon layer; and
forming a through hole on the insulating film so as to form a base electrode which comes into contact with the base electrode layer and at the same time forming an emitter electrode which comes into contact with the polysilicon layer.
10. The method for manufacturing a semiconductor device of claim 9, wherein the trench is formed as a -shaped trench.
11. The method for manufacturing a semiconductor device according to claim 9, wherein the base electrode layer is formed of polysilicon, silicide, or a multi-layer film comprising polysilicon and silicide.
12. The method for manufacturing a semiconductor device according to claim 10, wherein the base electrode layer is formed of polysilicon, silicide, or a multi-layer film comprising polysilicon and silicide.
13. A method for manufacturing a semiconductor device comprising the steps of:
preparing a collector layer of a first conducting type;
forming a base electrode layer made of polysilicon containing impurities of a second conducting type on a surface of the collector layer and forming an insulating film on the surface of the base electrode layer;
forming a trench in the collector layer by creating an opening at a part of the base electrode layer and the insulating film and doping impurities of the second conducting type so that a doped region is formed around the trench and in the base electrode layer;
forming a sidewall on an inside wall of the trench;
forming a polysilicon layer containing impurities for emitter diffusion inside the trench;
diffusing the impurities of the second conducting type of the doped region for forming a base region and, at the same time, diffusing the impurities of the polysilicon layer for forming an emitter region; and
forming a through hole on the insulating film and forming a base electrode which comes into contact with the base electrode layer and, at the same time, forming an emitter electrode which comes into contact with the polysilicon layer.
14. The method for manufacturing a semiconductor device of claim 13, wherein the trench is formed as a -shaped trench.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A coil assembly comprising:
a core comprising a columnar winding section having a winding surface and both end, and flanges disposed on the both ends;
two conducting wires wound around the winding surface of the core; and
electrodes disposed on the flanges of the core to be connected to the two conducting wires;
wherein the winding section has a plurality of protrusions protruding from the winding surface, the two conducting wires being wound about the winding surface so as to pass between neighboring protrusions while remaining separated from each other.
2. The coil assembly as claimed in claim 1, wherein one of the conducting wires contacts one of the neighboring protrusions, while the other of the conducting wires contacts the other of the neighboring protrusions.
3. The coil assembly as claimed in claim 1, wherein the plurality of protrusions are identical in shape.
4. The coil assembly as claimed in claim 1, wherein the plurality of protrusions are arrayed linearly at fixed intervals in a direction from one of the flanges toward the other of the flanges.
5. The coil assembly as claimed in claim 1, wherein the winding section has a polygonal cross-section and has a first surface; and
wherein the plurality of protrusions include a plurality of first protrusions disposed on the first surface of the winding section, each of the first protrusions being identical in shape and arrayed linearly at fixed intervals in a direction from one of the flanges toward the other of the flanges.
6. The coil assembly as claimed in claim 5, wherein the winding section has a second surface;
and wherein the plurality of protrusions further include a plurality of second protrusions disposed on the second surface of the winding section, each of the second protrusions being identical in shape to each other and to the first protrusions and arrayed linearly at fixed intervals in a direction from one of the flanges toward the other of the flanges, the first protrusions and second protrusions being offset from each other in the direction from one of the flanges toward the other of the flanges.
7. The coil assembly as claimed in claim 1, wherein the plurality of protrusions each has a base end and a top end and are tapered so that a cross-sectional area of the base end is greater than a cross-sectional area of the top end eliminating an overhanging configuration.
8. The coil assembly as claimed in claim 1, wherein the two conducting wires are wound about the winding section at uniform intervals therebetween in a winding direction, and a set of two conducting wires is wound about the winding section at uniform intervals between each turn.
9. The coil assembly as claimed in claim 1, wherein the flanges comprise a first flange and a second flange;
wherein the two conducting wires comprise a first conducting wire and a second conducting wire;
wherein the electrodes comprise a first electrode disposed in the first flange and connected to one end of the first conducting wire, a second electrode disposed in the first flange and connected to one end of the second conducting wire, a third electrode disposed in the second flange and connected to another end of the second conducting wire, and a fourth electrode disposed in the second flange and connected to another end of the first conducting wire;
wherein provided that a direction in which the first and second conducting wires are wound is defined as a longitudinal direction, a direction connecting the first and second electrodes is defined as a first widthwise direction, and a direction orthogonal to the longitudinal direction and the first widthwise direction is defined as a first thickness direction, the winding section has a side surface extending in the first thickness direction and the longitudinal direction, and
wherein the side surface is formed with a first notch at a position near the first flange and near the first electrode, the first notch extending entirely over the side surface in the thickness direction, the first conducing wire and the second conducting wire extending from the first electrode and the second electrode being disposed in the first notch side by side to start winding of the first and second conducting wires from the first notch.
10. The coil assembly as claimed in claim 9, wherein the first notch is formed along a junction between the winding section and the first flange.
11. The coil assembly as claimed in claim 9, wherein the first notch has a first corner on the first flange side and extending in the first thickness direction, and has a second corner on the side opposite the first flange side and extending in the first thickness direction;
wherein the first conducting wire extending from the first electrode extends along the first corner; and
wherein the second conducting wire extending from the second electrode extends along the second corner.
12. The coil assembly as claimed in claim 9, wherein provided that a direction in which a direction connecting the third electrode and the fourth electrode is defined as a second widthwise direction, and a direction orthogonal to the longitudinal direction and the second widthwise direction is defined as a second thickness direction, the winding section has another side surface extending in the second thickness direction and the longitudinal direction, and
wherein the another side surface is formed with a second notch at a position near the second flange and near the third electrode, the second notch extending entirely over the another side surface in the second thickness direction, the first conducing wire and the second conducting wire those wound over the winding section being disposed in the second notch side by side and connected to the fourth electrode and the third electrode, respectively.
13. The coil assembly as claimed in claim 12, wherein the second notch is formed along a junction between the winding section and the second flange.
14. The coil assembly as claimed in claim 12, wherein the second notch has a third corner on the second flange side and extending in the second thickness direction, and has a fourth corner on a side opposite the second flange and extending in the second thickness direction; and
wherein a wire part near the another end of the second conducting wire extends along the third corner, and a wire part near the another end of the first conducting wire extends along the fourth corner.
15. The coil assembly as claimed in claim 14, wherein the first flange includes a first retaining part positioned directly downstream of the first electrode in the winding direction and a second retaining part positioned directly downstream of the second electrode in the winding direction and separated from the first retaining part in the first widthwise direction, the first conducting wire extending from the first electrode being engaged in the first retaining part and disposed along the first corner and the second conducting wire extending from the second electrode being engaged in the second retaining part and disposed along the second corner.
16. The coil assembly as claimed in claim 15, wherein the second flange includes a third retaining part positioned directly upstream of the third electrode in the winding direction and a fourth retaining part positioned directly upstream of the fourth electrode in the winding direction and separated from the third retaining part in the second widthwise, the second conducting wire extending from the third corner being engaged in the third retaining part and connected to the third electrode and the first conducting wire extending from the fourth corner being engaged in the fourth retaining part and connected to the fourth electrode.