1. An adjustable electrical box comprising:
a box element having an enclosure with a box perimeter wall, a back wall and a front opening;
a box extender telescopically received in the box opening, the box extender having a tubular body with an extender perimeter wall, an open front, an open back, and a lateral outward flange connected to a portion of the open front and extending a distance no greater than to the perimeter of the box element; and
a first stop member pivotally connected to the lateral outward flange wherein the first stop member pivots between a first non-engaging position and a second surface-engaging position.
2. The electrical box of claim 1 wherein the lateral outward flange is connected to a portion of one or more locations on the open front of the box extender.
3. The electrical box of claim 2 further comprising a second stop member pivotally connected to the lateral outward flange wherein the second stop element pivots between a first-engaging position and a second non-engaging position, the second stop member being located on a portion of the lateral outward flange that is opposite the position of the first stop member.
4. The electrical box of claim 1 wherein the box element has a berm member located on an inside surface of the box perimeter wall adjacent the front opening wherein the berm member is positioned to provide a releasable interference fit with an outside surface of the extender perimeter wall of the box extender.
5. The electrical box of claim 1 wherein the box extender has a berm member located on an outside surface of the tubular body, the berm member positioned to provide an interference fit with an inside surface of the box element.
6. The electrical box of claim 1 wherein the box extender has a berm member located on one or more of an outside surface selected from the group consisting of a top side, a bottom side, a first opposed side, and a second opposed side.
7. The electrical box of claim 1 wherein the first opposed side and the second opposed side of the box extender has a sliding fit to the pair of opposed sidewalls of the box sufficiently close to allow the application of an insulating foam sealant between the box element and an edge of a surface opening that exposes the opening of the box while minimizing penetration of the insulating foam sealant to the interior of the box element.
8. The electrical box of claim 1 wherein the stop member has an outer surface that aligns with an outer surface of the lateral outward flange.
9. The electrical box of claim 1 wherein the box perimeter wall has a top wall, a bottom wall, a pair of opposed sidewalls, a back wall, and a front opening.
10. The electrical box of claim 1 wherein the extender perimeter wall has a top side, a bottom side, a first opposed side, and a second opposed side.
11. An electrical box extender for being telescopically received into an electrical box, the box extender comprising:
a tubular body, the tubular body with an extender perimeter wall, an open front, an open back, and a lateral outward flange connected to a portion of the open front and extending a distance no greater than to the perimeter of the box element; and
a first stop member pivotally connected to the lateral outward flange wherein the first stop member pivots between a first non-engaging position and a second surface-engaging position.
12. A method for efficiently extending an electrical box opening flush with a wall covering, the method comprising:
providing an electrical box for new construction installation, the electrical box comprising:
a box element forming an enclosure with a front opening;
a box extender telescopically received in the box front opening, the box extender having a tubular body with an extender perimeter wall, an open front, an open back, and a lateral outward flange connected to a portion of the open front and extending a distance no greater than to the perimeter of the box element; and
a first stop member pivotally connected to the lateral outward flange wherein the first stop member pivots between a first non-engaging position and a second surface-engaging position;
attaching the electrical box to a wall framework and installing electrical wiring to the electrical box;
applying a wall covering to the wall framework and creating an opening for exposing the electrical box and electrical wiring;
sliding the box extender outwardly from the box until the lateral outward flange is beyond the surface of the wall covering;
pivoting the first stop member from the first non-engaging position to the second surface-engaging position;
sliding the box extender inwardly into the box until the first stop member engages the surface of the wall covering; and
coupling an electrical component to the electrical wiring and to the electrical box.
13. The method of claim 12 further comprising sealing the space between the electrical box and the edge of the opening in the wall covering with an insulating foam sealant minimizing air and thermal flow between the space behind the wall covering and the room wherein the sliding fit between the box extender and the box element is sufficiently close to minimize the penetration of foam sealant into the box element.
14. The method of claim 12 wherein the step of coupling the electrical component to the electrical box includes coupling the first stop member between a portion of the electrical component and the wall covering.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
I claim:
1. An improved method for making silicon-on-sapphire transducers comprising the steps of:
forming a first silicon layer on a first side of a first sapphire wafer;
bonding a second sapphire wafer to said first side of said first sapphire wafer such that said first silicon layer is interposed between said first and second sapphire wafers;
reducing the thickness of said first sapphire wafer to a predetermined thickness;
depositing a second silicon layer on a second surface of said first sapphire wafer, wherein said second surface of said first sapphire wafer is oppositely disposed from said first surface of said first sapphire wafer;
bonding a silicon wafer to said second surface of said first sapphire wafer such that said second silicon layer is interposed between said first sapphire wafer and said silicon wafer, wherein said silicon wafer includes p regions indicative of a transducer structure and non-p regions; and,
removing said non-p regions of said silicon wafer thus forming said transducer structure of p regions on said second surface of said first sapphire wafer.
2. The method of claim 1, wherein said second sapphire wafer comprises a plurality of apertures.
3. The method of claim 2, wherein each of said plurality of apertures is approximately 0.150 inches in diameter.
4. The method of claim 1, wherein said second sapphire wafer is E.S. bonded to said first sapphire wafer.
5. The method of claim 1, wherein said second sapphire wafer is fusion bonded to said first sapphire wafer.
6. The method of claim 1, wherein said step of reducing the thickness of said first sapphire wafer comprises the step of lapping, or polishing said second surface of said first sapphire wafer until said first sapphire wafer is approximately of said predetermined thickness.
7. The method of claim 6, wherein said predetermined thickness is approximately 0.005 inches.
8. The method of claim 1, wherein said depositing of said second silicon layer comprises sputtering.
9. The method of claim 1, wherein said depositing of said second silicon layer comprises growing said second silicon layer.
10. The method of claim 1, further comprising the step of oxidizing said second silicon layer.
11. The method of claim 10, wherein said silicon wafer is fusion bonded to said oxidized second surface of said first sapphire wafer.
12. The method of claim 11 further comprising the step of sealing a non-conductive wafer including a depression in a surface thereof to said second surface of said first sapphire wafer over said p regions.
13. The method of claim 12, wherein said step of sealing comprises the step of E.S. bonding.
14. The method of claim 13, further comprising the step of forming a plurality of apertures in said non-conductive wafer at given locations corresponding to electrical contact locations.
15. The method of claim 14, wherein said non-conductive wafer comprises glass.
16. The method of claim 15, further comprising the step of filling each of said plurality of apertures in said non-conductive wafer with a glass metal frit.
17. The method of claim 1, wherein said silicon wafer comprises a sensor network and a plurality of contact areas, and said method further comprises the step of selectively etching those portions of said silicon wafer not corresponding to said sensor network or any of said contact areas.
18. A silicon-on-sapphire semiconductor structure comprising:
a sapphire wafer of a predetermined thickness;
a silicon layer formed on a surface of said first sapphire wafer; and,
p regions configured in a predetermined pattern indicative of a semiconductor structure bonded to said surface of said first sapphire wafer such that said silicon layer is interposed between said p regions and said sapphire wafer.
19. The structure of claim 18, wherein said silicon layer is oxidized.
20. An improved method for making silicon-on-sapphire semiconductor structures comprising the steps of:
forming a first silicon layer on a first side of a first sapphire wafer;
bonding a second sapphire wafer to said first side of said first sapphire wafer such that said first silicon layer is interposed between said first and second sapphire wafers;
reducing the thickness of said first sapphire wafer to a predetermined thickness;
depositing a second silicon layer on a second surface of said first sapphire wafer, wherein said second surface of said sapphire wafer is oppositely disposed from said first surface of said first sapphire wafer;
bonding a silicon wafer to said second surface of said first sapphire wafer such that said second silicon layer is interposed between said first sapphire wafer and said silicon wafer, wherein said silicon wafer includes regions of a first conductivity type indicative of a transducer structure and regions of a second conductivity type; and,
removing said regions of said second conductivity type thus forming said semiconductor structure of said regions of said first conductivity type on said second surface of said first sapphire wafer.