1. A computer implemented method for building a database capable of inferring a probability of a first inference relating to a drug, the computer implemented method comprising:
establishing, by at least one processor, a database structure, wherein the database structure is adapted to receive a plurality of divergent data, wherein in the database the plurality of divergent data includes a plurality of cohort data, wherein the database is adapted such that each datum of the database is conformed to the dimensions of the database, wherein the database is further adapted such that each datum of the database has an associated metadata and an associated key, wherein the associated metadata comprises data regarding cohorts associated with the corresponding datum, data regarding hierarchies associated with the corresponding datum, data regarding a corresponding source of the datum, and data regarding probabilities associated with integrity, reliability, and importance of each associated datum;
importing, by the at least one processor, additional data into the plurality of divergent data, wherein the additional data initially is not associated with metadata and the additional data does not conform to the dimensions of the database;
conforming, by the at least one processor, the additional data to the dimensions of the database;
associating, by the at least one processor, metadata and a key with each datum of the additional data;
establishing, by the at least one processor, a first set of rules for the database structure, the first set of rules comprising rules for determining a second set of rules to be applied to a query submitted to the database, wherein the query is related to a drug, wherein the second set of rules at least determine that a fact submitted with the query will serve as a frame of reference when executing the query, wherein the frame of reference serves as an anchor for generating associations among the plurality of cohort data and is used to determine rules for limiting the plurality of divergent data that is searched, wherein the second set of rules determine a search space for the query, and wherein the second set of rules are adapted to create the probability of the first inference, wherein the probability of the first inference is determined from comparing the plurality of data according to the second set of rules using the fact as the frame of reference, wherein the probability of the first inference is based on factors consisting of: a timing of the plurality of data according to the first set of rules, a source of the plurality of data according to the first set of rules, a trustworthiness of the plurality of data according to the first set of rules, a relevance of the plurality of data according to the first set of rules the plurality of data according to the first set of rules, a reliability of the plurality of data according to the first set of rules, an importance of the plurality of data according to the first set of rules, a data integrity of the plurality of data according to the first set of rules, and cohort information of the plurality of data according to the first set of rules, wherein a combination of the factors has a synergistic effect on the probability of the first inference;
storing, by the at least one processor, the probability of the first inference, wherein subsequently viewing the first inference is accessible to individuals having one of a set of different security access clearances based on the probability of the first inference having a higher or lower threshold of certainty probabilities of inferences when the inference implicates medical privacy laws, wherein first ones the individuals having a first one of the set of different security access clearances are permitted to viewing the first inference, and, wherein second ones the individuals having a second one of the set of different security access clearances are not permitted to viewing the first inference.
2. The computer-implemented method of claim 1 wherein the first inference is further related to one of testing of the drug, identifying an unknown side effect of the drug, identifying a new use for the drug, identifying the drug as being useful for treating a pre-selected medical condition, identifying at least one interaction of the drug with at least one additional drug, identifying at least one interaction of the drug with at least one environmental factor, identifying at least one interaction of the drug with a combination of at least one additional drug and at least one environmental factor, or identifying an efficacy of the drug.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of fabricating an image sensor, comprising:
providing a substrate having first and second photoelectric conversion regions and a transistor region between the first and second photoelectric conversion regions;
forming a first etch stop layer on the substrate;
forming a first inner lens and a first etch stop layer pattern by patterning the first etch stop layer, the first inner lens being on the first photoelectric conversion region and having a convex upper surface;
forming a first interconnection structure on the first inner lens and the first etch stop layer pattern;
forming a second etch stop layer on the first interconnection structure;
forming a second inner lens and a second etch stop layer pattern by patterning the second etch stop layer, the second inner lens being on the second photoelectric conversion region and having a convex upper surface; and
forming a second interconnection structure on the second inner lens and the second etch stop layer pattern,
wherein a radius of curvature of the first inner lens is different from a radius of curvature of the second inner lens.
2. The method of claim 1, further comprising:
forming a microlens on at least one of the first and second interconnection structure.
3. The method of claim 1, wherein patterning at least one of the first and second etch stop layer includes:
forming a photoresist pattern on at least one of the first and second etch stop layers;
heat-treating the photoresist pattern to form an inner lens-shaped photoresist pattern; and
at least one of etching the inner lens-shaped photoresist pattern and the first etch stop layer when the photoresist pattern is formed on the first etch stop layer and etching the inner lens-shaped photoresist pattern and the second etch stop layer when the photoresist pattern is formed on the second etch stop layer.
4. The method of claim 1, wherein at least one of the first and second etch stop layers includes at least one of silicon nitride (SiN), silicon carbide (SiC), and silicon carbide nitride (SiCN), and wherein at least one interconnection of the first and second interconnection structures includes copper.
5. The method of claim 1, wherein forming at least one of the first and second interconnection structure includes:
at least one of forming an intermetal dielectric layer on the first inner lens and the first etch stop layer pattern and forming an intermetal dielectric layer on the second inner lens and the second etch stop layer pattern;
at least one of patterning the intermetal dielectric layer and the first etch stop layer pattern to form an opening when the intermetal dielectric layer is formed on the first inner lens and the first etch stop layer pattern and patterning the intermetal dielectric layer and the second etch stop layer pattern to form an opening when the intermetal dielectric layer is formed on the second inner lens and the second etch stop layer pattern; and
filling the opening with a conductive material.
6. The method of claim 1, further comprising:
stacking at least one interconnection etch stop layer and at least one intermetal dielectric layer on at least one of the first and second interconnection structure;
patterning the at least one intermetal dielectric layer and the at least one interconnection etch stop layer to form at least one of a trench and a via hole; and
filling at least one of the trench and the via hole with a conductive material.
7. The method of claim 1, further comprising:
forming a color filter on at least one of the first and second inner lens; and
forming a microlens on the color filter.
8. The method of claim 1, further comprising:
forming a barrier layer on at least one of the first and second interconnection structures;
forming an intermetal dielectric layer on the barrier layer;
patterning the intermetal dielectric layer and the barrier layer to form an opening; and
filling the opening with a conductive material.
9. The method of claim 8, wherein the barrier layer includes at least one of silicon nitride (SiN), silicon carbide nitride (SiCN), and cobalt tungsten phosphor (CoWP).
10. The method of claim 8, further comprising:
forming a color filter on at least one of the first and second interconnection structure; and
forming a microlens on the color filter.
11. The method of claim 1, wherein patterning at least one of the first and second etch stop layer includes:
forming a photoresist pattern on at least one of the first and second etch stop layer;
heat-treating the photoresist pattern to form an inner lens-shaped photoresist pattern;
at least one of etching the inner lens-shaped photoresist pattern and the first etch stop layer to form a preliminary inner lens when the photoresist pattern is formed on the first etch stop layer and etching the inner lens-shaped photoresist pattern and the second etch stop layer to form a preliminary inner lens when the photoresist pattern is formed on the second etch stop layer; and
at least one of providing a third etch stop layer on the preliminary inner lens to form an inner lens on the first photoelectric conversion region when the photoresist pattern is formed on the first etch stop layer and an etch stop layer pattern on the transistor region and providing a third etch stop layer on the preliminary inner lens to form an inner lens on the second photoelectric conversion region when the photoresist pattern is formed on the second etch stop layer and an etch stop layer pattern on the transistor region.
12. The method of claim 11, wherein the third etch stop layer is thinner than at least one of the first and second etch stop layer.
13. The method of claim 11, wherein forming at least one of the first and second interconnection structure includes:
at least one of forming an intermetal dielectric layer on the first inner lens and the first etch stop layer pattern and forming an intermetal dielectric layer on the second inner lens and the second etch stop layer pattern;
at least one of patterning the intermetal dielectric layer and the first etch stop layer pattern to form an opening when the intermetal dielectric layer is formed on the first inner lens and the first etch stop layer pattern and patterning the intermetal dielectric layer and the second etch stop layer pattern to form an opening when the intermetal dielectric layer is formed on the second inner lens and the second etch stop layer pattern; and
filling the opening with a conductive material.
14. The method of claim 13, further comprising:
stacking at least one interconnection etch stop layer and at least one intermetal dielectric layer on at least one of the first and second interconnection structure;
patterning the at least one intermetal dielectric layer and the at least one interconnection etch stop layer to form at least one of a trench and a via hole; and
filling at least one of the trench and the via hole with a conductive material.
15. The method of claim 13, further comprising:
forming a barrier layer on at least one of the first and second interconnection structure;
forming an intermetal dielectric layer on the barrier layer;
patterning the intermetal dielectric layer and the barrier layer to form an opening; and
filling the opening with a conductive material.
16. The method of claim 15, wherein the barrier layer includes at least one of silicon nitride (SiN), silicon carbide nitride (SiCN), and cobalt tungsten phosphor (CoWP).
17. The method of claim 8, wherein the conductive material comprises copper.