1. A displacement control valve, comprising:
a valve element;
a stationary cage portion surrounding the valve element and at least partially forming:
a high-pressure passage;
a low-pressure passage;
a first displacement actuator passage;
a second displacement actuator passage; and
at least one control valve passage; and
a movable cage portion disposed proximate the stationary cage portion and being movable to selectively restrict fluid flow through only the first and second displacement actuator passages.
2. The displacement control valve of claim 1, wherein the at least one control valve passage includes:
a regeneration control passage; and
a load-holding control passage.
3. The displacement control valve of claim 2, wherein the valve element is movable between:
a first position at which the first and second displacement actuator passages are simultaneously exposed to substantially similar fluid pressures;
a second position at which the first displacement actuator passage is fluidly connected with the high-pressure passage and the second displacement actuator passage is fluidly connected with the low-pressure passage; and
a third position at which the second displacement actuator passage is fluidly connected with the high-pressure passage and the first displacement actuator passage is fluidly connected with the low-pressure passage.
4. The displacement control valve of claim 3, wherein the first and second displacement actuator passages are simultaneously fluidly connected to both the high- and low-pressure passages when the valve element is in the first position.
5. The displacement control valve of claim 4, wherein fluid flow between the high- and low-pressure passages and the first and second displacement actuator passages is restricted when the valve element is in the first position.
6. The displacement control valve of claim 3, wherein the regeneration control passage is also simultaneously exposed to substantially similar fluid pressures as the first and second displacement actuator passages when the valve element is in the first position.
7. The displacement control valve of claim 3, wherein the load-holding control passage is blocked when the valve element is in the first position.
8. The displacement control valve of claim 3, wherein the regeneration and load-holding control passages are fluidly connected to the low-pressure passage with the valve element is in the second position.
9. The displacement control valve of claim 3, wherein:
the regeneration control passage is fluidly connected with the high-pressure passage when the valve element is in the third position; and
the load-holding control passage is fluidly connected with the low-pressure passage when the valve element is in the third position.
10. The displacement control valve of claim 1, further including a link connected to the movable cage portion at a first end and connectable with a displacement actuator at a second end, the link being configured to transfer motion of the displacement actuator to the movable cage portion and reduce fluid communication between the displacement control valve and the displacement actuator as the displacement actuator moves away from a neutral position.
11. The displacement control valve of claim 1, wherein:
the valve element is a spring-biased and pilot-operated spool; and
pilot flows of fluid to the valve element are electronically controllable based on operator input.
12. A hydraulic system, comprising:
a pump;
a tank;
a displacement actuator having a first chamber and a second chamber;
a regeneration valve;
a load-holding valve; and
a displacement control valve, the displacement control valve including:
a valve element;
a stationary cage portion surrounding the valve element and at least partially forming:
a high-pressure passage fluidly connecting the pump with the valve element;
a low-pressure passage fluidly connecting the valve element with the tank;
a first displacement actuator passage fluidly connecting the valve element with the first chamber of the displacement actuator;
a second displacement actuator passage fluidly connecting the valve element with the second chamber of the displacement actuator;
a load-holding control passage fluidly connecting the valve element with the load-holding valve; and
a regeneration control passage fluidly connecting the valve element with the regeneration valve; and
a movable cage portion disposed proximate the stationary cage portion and being movable to selectively restrict fluid flow through only the first and second displacement actuator passages.
13. The hydraulic system of claim 12, wherein the valve element is movable between:
a first position at which the first and second displacement actuator passages are simultaneously fluidly connected to both the high- and low-pressure passages;
a second position at which the first displacement actuator passage is fluidly communicated with the high-pressure passage and the second displacement actuator passage is fluidly communicated with the low-pressure passage; and
a third position at which the second displacement actuator passage is fluidly communicated with the high-pressure passage and the first displacement actuator passage is fluidly communicated with the low-pressure passage.
14. The hydraulic system of claim 13, wherein:
fluid flow between the high- and low-pressure passages and the first and second displacement actuator passages is restricted when the valve element is in the first position; and
the regeneration control passage is also simultaneously exposed to the high- and low-pressure passages when the valve element is in the first position.
15. The hydraulic system of claim 14, wherein:
the load-holding control passage is blocked when the valve element is in the first position;
the regeneration and load-holding control passages are fluidly connected to the low-pressure passage with the valve element is in the second position; and
the regeneration control passage is fluidly connected with the high-pressure passage and the load-holding control passage is fluidly connected with the low-pressure passage when the valve element when the valve element is in the third position.
16. The hydraulic system of claim 13, further including a link connected between the movable cage portion and the displacement actuator, the link being configured to transfer motion of the displacement actuator to the movable cage portion and reduce fluid communication between the displacement control valve and the displacement actuator as the displacement actuator moves away from a neutral position.
17. The hydraulic system of claim 13, wherein the valve element is a spring-biased and pilot-operated spool.
18. The hydraulic system of claim 13, wherein:
the pump is a charge pump;
the load-holding valve is a first load-holding valve associated with the first actuator passage;
the hydraulic system further includes:
primary pump;
a hydraulic actuator;
first and second actuator passages connecting the primary pump with the hydraulic actuator in closed loop manner; and
a second load-holding valve associated with the second actuator passage; and
the regeneration valve is disposed within a passage connecting the first and second actuator passages.
19. The hydraulic system of claim 18, further including:
an operator interface device configured to receive input regarding desired movement of the hydraulic actuator; and
a controller in communication with the operator interface device and the displacement control valve, the controller being configured to control movement of the valve element between the first, second, and third positions based on the input.
20. A hydraulic system, comprising:
primary pump;
a displacement actuator associated with the primary pump and having first and second chambers;
a hydraulic actuator;
first and second actuator passages connecting the primary pump with the hydraulic actuator in closed loop manner;
a regeneration valve disposed within a passage connecting the first and second actuator passages;
first and second load-holding valves associated with the first and second actuator passages, respectively;
a charge pump;
a tank;
a displacement control valve including:
a valve element movable between:
a first position at which the first and second chambers of the displacement actuator and the regeneration valve are simultaneously fluidly connected to both the charge pump and the tank in a restricted manner, and flow from the first and second load-holding valves to the tank is blocked;
a second position at which the first chamber of the displacement actuator is fluidly connected with the charge pump, and the second chamber of the displacement actuator, the regeneration valve, and the first and second load-holding valves are fluidly connected with the tank; and
a third position at which the second chamber of the displacement actuator and the regeneration valve are fluidly communicated with the charge pump and the first chamber of the displacement actuator and the first and second load-holding valves are fluidly communicated with the tank;
a stationary cage portion surrounding the valve element; and
a movable cage portion disposed proximate the stationary cage portion and being movable to selectively restrict fluid flow between the valve element and the displacement actuator;
a link connected between the movable cage portion and the displacement actuator, the link being configured to transfer motion of the displacement actuator to the movable cage portion;
an operator interface device configured to receive input regarding desired movement of the hydraulic actuator; and
a controller in communication with the operator interface device and the displacement control valve, the controller being configured to control movement of the valve element between the first, second, and third positions based on the input.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
That which is claimed is:
1. An integrated circuit device, comprising:
a semiconductor substrate having a semiconductor region of first conductivity type therein extending adjacent a surface thereof;
an electrically insulating layer having a contact hole therein that exposes the semiconductor region of first conductivity type, on the surface of said semiconductor substrate; and
a poly-Si1-xGex conductive plug of first conductivity type that extends in the contact hole and is electrically connected to the semiconductor region of first conductivity type.
2. The device of claim 1, wherein the germanium mole fraction x within said poly-Si1-xGex conductive plug is in a range between about 0.1 and about 0.5.
3. The device of claim 2, wherein the germanium mole fraction x within said poly-Si1-xGex conductive plug is less than about 0.35.
4. The device of claim 3, wherein the germanium mole fraction x within said poly-Si1-xGex conductive is greater than about 0.25.
5. The device of claim 1, wherein said poly-Si1-xGex conductive plug is doped with impurities selected from the group consisting of phosphorus (P), arsenic (As) and antimony (Sb).
6. An integrated circuit memory device, comprising:
a semiconductor substrate;
a memory cell access transistor adjacent a surface of said semiconductor substrate, said memory cell access transistor comprising a word line on the surface and source and drain regions of first conductivity type in said semiconductor substrate;
a first interlayer insulating layer on said semiconductor substrate, said first interlayer insulating layer having a first opening therein that extends opposite the source region;
a first poly-Si1-xGex conductive plug of first conductivity type that extends in the first opening and is electrically connected to the source region; and
an integrated circuit capacitor that extends on said semiconductor substrate and has an electrode electrically connected to said first poly-Si1-xGex conductive plug.
7. The device of claim 6, wherein the germanium mole fraction x within said first poly-Si1-xGex conductive plug is in a range between about 0.1 and about 0.5.
8. The device of claim 7, wherein the germanium mole fraction x within said first poly-Si1-xGex conductive plug is less than about 0.35.
9. The device of claim 8, wherein the germanium mole fraction x within said poly-Si1-xGex conductive is greater than about 0.25.
10. The device of claim 7, wherein said first poly-Si1-xGex conductive plug is doped with impurities selected from the group consisting of phosphorus (P), arsenic (As) and antimony (Sb).
11. The device of claim 6, further comprising:
a second interlayer insulating layer on said first interlayer insulating layer, said second interlayer insulating layer having a second opening therein that extends opposite said first poly-Si1-xGex conductive plug; and
a second poly-Si1-xGex conductive plug of first conductivity type that extends in the second opening and is electrically connected to said poly-Si1-xGex conductive plug.
12. The device of claim 11, wherein the germanium mole fraction x within said second poly-Si1-xGex conductive plug is unequal to the germanium mole fraction x within said first poly-Si1-xGex conductive plug.
13. The device of claim 11, further comprising an integrated circuit capacitor that extends on said second interlayer insulating layer and has a lower electrode electrically connected to said second poly-Si1-xGex conductive plug.
14. The device of claim 13, wherein the lower electrode directly contacts said second poly-Si1-xGex conductive plug.
15. An integrated circuit device, comprising:
a semiconductor substrate;
an electrically insulating layer on said semiconductor substrate, said electrically insulating layer having a contact hole therein; and
a poly-Si1-xGex conductive plug of first conductivity type that extends in the contact hole.
16. The device of claim 15, wherein the germanium mole fraction x within said poly-Si1-xGex conductive plug is in a range between about 0.1 and about 0.5.
17. The device of claim 16, wherein the germanium mole fraction x within said poly-Si1-xGex conductive plug is less than about 0.35.
18. The device of claim 17, wherein the germanium mole fraction x within said poly-Si1-xGex conductive is greater than about 0.25.
19. The device of claim 15, wherein said poly-Si1-xGex conductive plug is doped with impurities selected from the group consisting of phosphorus (P), arsenic (As) and antimony (Sb).
20. A method of fabricating an integrated circuit device, comprising:
forming a semiconductor substrate having a semiconductor region of first conductivity type therein extending adjacent a surface thereof;
forming an electrically insulating layer having a contact hole therein that exposes the semiconductor region of first conductivity type, on the surface of said semiconductor substrate; and
forming a poly-Si1-xGex conductive plug of first conductivity type that extends in the contact hole and is electrically connected to the semiconductor region of first conductivity type.
21. The method according to claim 20, wherein forming a poly-Si1-xGex conductive plug of first conductivity type comprises:
forming a doped poly-Si1-xGex conductive plug that extends in the contact hole; and
annealing the doped poly-Si1-xGex plug.
22. The method according to claim 21, wherein annealing the poly-Si1-xGex plug comprises annealing the poly-Si1-xGex plug at temperature of about 900 C. for about 40 minutes.
23. The method according to claim 21, wherein annealing the poly-Si1-xGex plug comprises:
annealing the poly-Si1-xGex plug at temperature lower than about 750 C.; and
performing a rapid thermal process (RPT) at a temperature lower than about 900 C.
24. The method according to claim 21, wherein forming a doped poly-Si1-xGex plug comprises forming a doped poly-Si1-xGex plug having a dopant concentration of about 41015 cm2 and an injection energy of about 60 KeV.
25. The method according to claim 20, wherein forming a poly-Si1-xGex conductive plug comprises forming a poly-Si1-xGex conductive plug having a germanium mole fraction x in a range between about 0.1 and about 0.5.
26. The method according to claim 25, wherein forming a poly-Si1-xGex conductive plug comprises forming a poly-Si1-xGex conductive plug having a germanium mole fraction x that is less than about 0.35.
27. The method according to claim 26, wherein forming a poly-Si1-xGex conductive plug comprises forming a poly-Si1-xGex conductive plug having a germanium mole fraction x that is greater than about 0.25.
28. The method according to claim 20, wherein forming a poly-Si1-xGex conductive plug comprises forming a poly-Si1-xGex conductive plug that is doped with impurities selected from the group consisting of phosphorus (P), arsenic (As) and antimony (Sb).
29. A method of fabricating an integrated circuit memory device, comprising:
forming a semiconductor substrate;
forming a memory cell access transistor adjacent a surface of said semiconductor substrate, said memory cell access transistor comprising a word line on the surface and source and drain regions of first conductivity type in said semiconductor substrate;
forming a first interlayer insulating layer on said semiconductor substrate, said first interlayer insulating layer having a first opening therein that extends opposite the source region;
forming a first poly-Si1-xGex conductive plug of first conductivity type that extends in the first opening and is electrically connected to the source region; and
forming an integrated circuit capacitor that extends on said semiconductor substrate and has an electrode electrically connected to said first poly-Si1-xGex conductive plug.
30. The method according to claim 29, wherein forming a first poly-Si1-xGex conductive plug comprises forming a first poly-Si1-xGex conductive plug having a germanium mole fraction x within in a range between about 0.1 and about 0.5.
31. The method according to claim 30, wherein forming a first poly-Si1-xGex conductive plug comprises forming a first poly-Si1-xGex conductive plug having a germanium mole fraction x that is less than about 0.35.
32. The method according to claim 31, wherein forming a first poly-Si1-xGex conductive plug comprises forming a first poly-Si1-xGex conductive plug having a germanium mole fraction x that is greater than about 0.25.
33. The method according to claim 29, wherein forming a first poly-Si1-xGex conductive plug comprises forming a first poly-Si1-xGex conductive plug that is doped with impurities selected from the group consisting of phosphorus (P), arsenic (As) and antimony (Sb).
34. The method according to claim 29, further comprising:
forming a second interlayer insulating layer on said first interlayer insulating layer, said second interlayer insulating layer having a second opening therein that extends opposite said first poly-Si1-xGex conductive plug; and
forming a second poly-Si1-xGex conductive plug of first conductivity type that extends in the second opening and is electrically connected to said poly-Si1-xGex conductive plug.
35. The method according to claim 34:
wherein forming a first poly-Si1-xGex conductive plug of first conductivity type comprises forming a first doped poly-Si1-xGex conductive plug that extends in the contact hole and annealing the first doped poly-Si1-xGex plug; and
wherein forming a second poly-Si1-xGex conductive plug of first conductivity type comprises forming a second doped poly-Si1-xGex conductive plug that extends in the contact hole and annealing the second doped poly-Si1-xGex plug.
36. The method according to claim 35:
wherein annealing the first poly-Si1-xGex plug comprises annealing the first poly-Si1-xGex plug at temperature of about 900 C. for about 40 minutes; and wherein annealing the second poly-Si1-xGex plug comprises annealing the second poly-Si1-xGex plug at temperature of about 900 C. for about 40 minutes.
37. The method according to claim 35:
wherein annealing the first poly-Si1-xGex plug comprises:
annealing the first poly-Si1-xGex plug at temperature lower than about 750 C.; and
performing a rapid thermal process (RPT) at a temperature lower than about 900 C.; and
wherein annealing a second poly-Si1-xGex plug comprises:
annealing the second poly-Si1-xGex plug at temperature lower than about 750 C.; and
performing a rapid thermal process (RPT) at a temperature lower than about 900 C.
38. The method according to claim 35:
wherein forming a first doped poly-Si1-xGex plug comprises forming a first doped poly-Si1-xGex plug having a dopant concentration of about 41015 cm2 and an injection energy of about 60 KeV; and
wherein forming a second doped poly-Si1-xGex plug comprises forming a second doped poly-Si1-xGex plug having a dopant concentration of about 41015 cm2 and an injection energy of about 60 KeV.
39. The method according to claim 34, wherein the germanium mole fraction x within said second poly-Si1-xGex conductive plug is unequal to the germanium mole fraction x within said first poly-Si1-xGex conductive plug.
40. The method according to claim 34, further comprising:
forming an integrated circuit capacitor that extends on said second interlayer insulating layer and has a lower electrode electrically connected to said second poly-Si1-xGex conductive plug.
41. The method of claim 40, wherein the lower electrode directly contacts said second poly-Si1-xGex conductive plug.
42. A method of fabricating an integrated circuit device, comprising:
forming a semiconductor substrate;
forming an electrically insulating layer on said semiconductor substrate, said electrically insulating layer having a contact hole therein; and
forming a poly-Si1-xGex conductive plug of first conductivity type that extends in the contact hole.
43. The method according to claim 42, wherein forming a poly-Si1-xGex conductive plug of first conductivity type comprises:
forming a doped poly-Si1-xGex conductive plug that extends in the contact hole; and
annealing the doped poly-Si1-xGex plug.
44. The method according to claim 43, wherein annealing the poly-Si1-xGex plug comprises annealing the poly-Si1-xGex plug at temperature of about 900 C. for about 40 minutes.
45. The method according to claim 43, wherein annealing the poly-Si1-xGex plug comprises:
annealing the poly-Si1-xGex plug at temperature lower than about 750 C.; and
performing a rapid thermal process (RPT) at a temperature lower than about 900 C.
46. The method according to claim 43, wherein forming a doped poly-Si1-xGex plug comprises forming a doped poly-Si1-xGex plug having a dopant concentration of about 41015 cm2 and an injection energy of about 60 KeV.
47. The method according to claim 42, wherein forming a poly-Si1-xGex conductive plug comprises forming a poly-Si1-xGex conductive plug having a germanium mole fraction x is in a range between about 0.1 and about 0.5.
48. The method according to claim 47, wherein forming a poly-Si1-xGex conductive plug comprises forming a poly-Si1-xGex conductive plug having a germanium mole fraction x that is less than about 0.35.
49. The method according to claim 48, wherein forming a poly-Si1-xGex conductive plug comprises forming a poly-Si1-xGex conductive plug having a germanium mole fraction x that is greater than about 0.25.
50. The method according to claim 42, wherein forming poly-Si1-xGex conductive plug comprises forming poly-Si1-xGex that is doped with impurities selected from the group consisting of phosphorus (P), arsenic (As) and antimony (Sb).