1. A method of depositing a semiconductor alloy material including at least silicon and germanium by performing a set of at least one processing step at least once, said set of at least one processing step comprising a deposition step that deposits a semiconductor alloy material including at least silicon and germanium on a substrate by flowing a high order silane gas having a chemical formula of SinH2n+2 and a germanium precursor gas as reactant gases into a process chamber including said substrate, wherein n is an integer greater than 3.
2. The method of claim 1, wherein said set of processing steps further comprises an etch step that etches at least a portion of said deposited semiconductor alloy material by flowing at least one etchant gas into said process chamber.
3. The method of claim 2, wherein said at least one deposition step is performed at a deposition temperature not less than 380\xb0 C. and less than 400\xb0 C.
4. The method of claim 3, wherein said at least one etch step is performed at an etch temperature not less than 380\xb0 C. and not greater than 430\xb0 C.
5. The method of claim 2, wherein said at least one deposition step is performed at a deposition temperature in a range from, and including, 380\xb0 C. to, and including, 600\xb0 C.
6. The method of claim 5, wherein said at least one etch step is performed at an etch temperature in a range from, and including, 380\xb0 C. to, and including, 630\xb0 C.
7. The method of claim 6, wherein said etch temperature is the same as the deposition temperature.
8. The method of claim 6, wherein said etch temperature is higher than said deposition temperature.
9. The method of claim 8, wherein said etch temperature is higher than said deposition temperature by no more than 50\xb0 C.
10. The method of claim 2, wherein said at least one etchant gas is a combination of a hydrogen chloride gas and a germanium-containing gas.
11. The method of claim 10, wherein said germanium-containing gas is a germanium hydride.
12. The method of claim 10, wherein said germanium-containing gas is germanium chloride.
13. The method of claim 10, wherein said germanium-containing gas is germanium fluoride.
14. The method of claim 10, wherein said germanium-containing gas is selected from germane, digermane, germanium tetrachloride, and germanium tetrafluoride.
15. The method of claim 10, wherein said germanium-containing gas is the same as said germanium precursor gas.
16. The method of claim 10, wherein said germanium-containing gas is different from said germanium-containing gas.
17. The method of claim 2, wherein said set of at least one processing step is performed multiple times.
18. The method of claim 1, wherein said semiconductor alloy material is deposited on said substrate during said at least one deposition step within a process chamber at a pressure selected from a pressure range from 3 Torr to 300 Torr.
19. The method of claim 1, wherein said deposited semiconductor alloy material is etched during said at least one etch step within a process chamber at a pressure selected from a pressure range from 1 Torr to 300 Torr.
20. The method of claim 1, wherein said deposition step is performed at a total pressure and a deposition temperature at which flowing said high order silane gas without concurrent flow of any germanium precursor gas results in growth of silicon in a growth mode other than a Frank-van der Merwe (FM) growth mode, and deposition of a single crystalline semiconductor alloy material in an FM growth mode occurs within said deposition step.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A battery pack comprising:
a plurality of battery modules arranged in parallel, each of said battery modules comprising a plurality of sealed rechargeable batteries arranged in a row and integrally connected in series, said sealed rechargeable battery having a metal case;
a pair of holding brackets for holding both ends of said battery modules in a direction perpendicular to the parallel direction of said battery modules;
said battery modules being disposed with a cooling space provided between said battery modules;
said battery pack further comprising:
a tubular cover for surrounding the periphery of said plurality of battery modules so that said cover surrounds the entire periphery of said plurality of battery modules disposed with a cooling space provided therebetween; and
a coolant supply device for supplying coolant from one end to the other end of said tubular cover;
wherein said holding brackets are each provided with a ring-shaped protrusive wall into which said ends of said battery modules are fitted, said ring-shaped protrusive walls slide in both ends of said tubular cover, a slit is formed in said holding brackets in such a position as to correspond to said cooling space between the battery modules, and a fan is provided in the outer surface of at least one of said holding brackets.
2. The battery pack according to claim 1, wherein a member for restricting or promoting cooling is disposed in the sidewall of said sealed rechargeable battery facing said cooling space between said battery modules, to even cooling performance between an intake side and an discharge side of said coolant.
3. The battery pack according to claim 1, wherein a blow direction of said fan is changeable.