1. A robot apparatus comprising:
a main body;
a driving mechanism inside the main body;
a guide mechanism driven by the driving mechanism, the guide mechanism comprising:
a working table connected to the driving mechanism;
a guide frame positioned on the working table;
a first guide wheel and two second guide wheels installed on the guide frame, the first guide wheel positioned parallel with and located between the two second guide wheels; and
two adjustment assemblies configured to adjust a height of the first guide wheel relative to the guide frame, the adjustment assembly comprising:
a guide shaft; and
an elastic member configured to elastically resist against the first guide wheel and the guide shaft; and
a sealed belt configured to seal the driving mechanism inside the main body, the sealed belt positioned passing through the first guide wheel and the two second guide wheels;
wherein, either the first guide wheel or the two second guide wheels can be resisted against an inner side of the sealed belt in the direction away from the working table, and a remaining can be resisted against an outside side of the sealed belt in the direction toward the working table.
2. The robot apparatus as claimed in claim 1, wherein, the guide shaft includes a shaft portion and a protrusion portion connected to the shaft portion.
3. The robot apparatus as claimed in claim 2, wherein, the elastic member is coiled on the shaft portion, and is resisted against and located between the first guide wheel and the protrusion portion.
4. The robot apparatus as claimed in claim 2, wherein, the guide frame defines a recess portion positioned in the middle of the guide frame and the first guide wheel is received in the recess portion.
5. The robot apparatus as claimed in claim 4, wherein, the guide frame defines two blind holes on either opposite end of the guide frame adjacent to the recess portion.
6. The robot apparatus as claimed in claim 5, wherein, the first guide wheel defines two guide holes facing to the two blind holes.
7. The robot apparatus as claimed in claim 6, wherein, the first guide wheel further defines a receiving hole connected to the guide hole configured to receive the elastic member, and a diameter of the receiving hole is larger than the guide hole.
8. The robot apparatus as claimed in claim 7, wherein, an end of the shaft portion adjacent to the elastic member is received in the guide hole and the receiving hole, and the end of the shaft portion away from the elastic member is received in and resisted against the blind hole.
9. The robot apparatus as claimed in claim 1, wherein, the guide mechanism further includes four adjustment frames adjustably connected to the guide frame, and each one of the two second guide wheels is connected to the guide frame by each two of the four adjustment frames.
10. The robot apparatus as claimed in claim 9, wherein, the adjustment frame is L-shaped, and each one of the four adjustment frames defines an oval adjusting hole positioned on an end of the adjustment frame adjustably connected to the guide frame.
11. The robot apparatus as claimed in claim 10, wherein, a longer axial direction of the adjusting hole is substantially perpendicular to the guide frame.
12. The robot apparatus as claimed in claim 1, wherein, the driving mechanism further includes a shaft rotatably positioned in the main body, and a wheel connected to the shaft moved by the shaft in an axial direction of the shaft.
13. The robot apparatus as claimed in claim 12, wherein, the working table is coiled on the shaft connected to the wheel and the working table can be moved by the wheel in the axial direction of the shaft.
14. The robot apparatus as claimed in claim 1, wherein, the guide mechanism further includes a sliding member connected to the working table and a guide rail adjacent to the sliding member parallel with the shaft, and the sliding member is slidingly positioned on the guide rail.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A semiconductor integrated circuit device, comprising:
a first insulating film formed over a semiconductor substrate;
a first interconnection serving as a wiring line, buried in a surface of said first insulating film and including a first conductor film and a second conductor film having copper as a main component, wherein said first conductor film is interposed between said second conductor film and said first insulating film and includes a function to suppress diffusion of copper;
a second insulating film formed over said first interconnection, said second insulating film including a function to suppress diffusion of copper;
a third insulating film formed over said second insulating film;
a second interconnection serving as a wiring line, including aluminum as a main component and formed over said third insulating film; and
a connecting conductor buried in said second insulating film and third insulating film, wherein said connecting conductor is contacting said first interconnection and said second interconnection and includes a function to suppress diffusion of copper,
a fourth insulating film formed over said second interconnection;
a third interconnection connecting with said second interconnection through said fourth insulating film by a connecting portion formed therein, including aluminum as a main component and formed over said fourth insulating film, and
wherein said third interconnection includes an electrode extending portion electrically connected to a pad portion.
2. A semiconductor integrated circuit device according to claim 1, wherein said second insulating film comprises a nitride film.
3. A semiconductor integrated circuit device according to claim 1, wherein said first conductor film has a thickness smaller than that of said second conductor film.
4. A semiconductor integrated circuit device according to claim 1, wherein said first conductor film is comprised of one selected from the group consisting of tungsten, titanium nitride, titanium, tantalum, tungsten nitride, tantalum nitride, tungsten silicide nitride, titanium silicide nitride and tantalum silicide nitride.
5. A semiconductor integrated circuit device according to claim 1, wherein said connecting conductor is comprised of one selected from the group consisting of tungsten, titanium nitride, titanium, tantalum, tungsten nitride, tantalum nitride, tungsten silicide nitride, titanium silicide nitride and tantalum silicide nitride.
6. A semiconductor integrated circuit device according to claim 1, further comprising a passivation film over said third interconnection.
7. A semiconductor integrated circuit device according to claim 6, wherein said electrode extending portion includes said pad portion and is electrically connected with a bonding wire via an opening formed in said passivation film.
8. A semiconductor integrated circuit device according to claim 6, wherein said electrode extending portion includes said pad portion and is electrically connected with a bump electrode via an opening formed in said passivation film.
9. A semiconductor integrated circuit device according to claim 1, wherein said third interconnection is connected with said second interconnection via a connecting portion formed as a part of said third interconnection.
10. A semiconductor integrated circuit device according to claim 1, wherein said third interconnection is connected with said second interconnection via a connecting portion formed by a same material as said connecting conductor.
11. A semiconductor integrated circuit device, comprising:
a first insulating film formed over a semiconductor substrate;
a first interconnection serving as a wiring line, including copper as a main component and buried in a surface of said first insulating film;
a second insulating film formed over said first interconnection;
a second interconnection serving as a wiring line, including aluminum as a main component and formed over said second insulating film;
a connecting conductor buried in said second insulating film and electrically connecting said first interconnection and said second interconnection, wherein said first interconnection is covered with a barrier layer to suppress diffusion of copper;
a third insulating film formed over said second interconnection;
a third interconnection connecting with said second interconnection through said third insulating film by a connecting portion formed therein, including aluminum as a main component and formed over said third insulating film, and
wherein said third interconnection includes an electrode extending portion electrically connected to a pad portion.
12. A semiconductor integrated circuit device according to claim 11, wherein said barrier layer comprises a first barrier film interposed between said first insulating film and said first interconnection and a second barrier film interposed between said first interconnection and said second insulating film.
13. A semiconductor integrated circuit device according to claim 12, wherein said first barrier film is comprised of one selected from the group consisting of tungsten, titanium nitride, titanium, tantalum, tungsten nitride, tantalum nitride, tungsten silicide nitride, titanium silicide nitride and tantalum silicide nitride.
14. A semiconductor integrated circuit device according to claim 12, wherein said second barrier layer is comprised of a silicon nitride film.
15. A semiconductor integrated circuit device according to claim 11, wherein said connecting conductor includes a function to suppress diffusion of copper.
16. A semiconductor integrated circuit device according to claim 15, wherein said connecting conductor is comprised of one selected from the group consisting of tungsten, titanium nitride, titanium, tantalum, tungsten nitride, tantalum nitride, tungsten silicide nitride, titanium silicide nitride and tantalum silicide nitride.
17. A semiconductor integrated circuit device according to claim 11, further comprising a passivation film over said third interconnection.
18. A semiconductor integrated circuit device according to claim 17, wherein said electrode extending portion includes said pad portion and is electrically connected with a bonding wire via an opening formed in said passivation film.
19. A semiconductor integrated circuit device according to claim 17, wherein said electrode extending portion includes said pad portion and is electrically connected with a bump electrode via an opening formed in said passivation film.
20. A semiconductor integrated circuit device according to claim 11, wherein said third interconnection is connected with said second interconnection via a connecting portion formed as a part of said third interconnection.
21. A semiconductor integrated circuit device according to claim 11, wherein said third interconnection is connected with said second interconnection via a connecting portion formed by a same material as said connecting conductor.