1-18. (canceled)
19. A method of producing a gas barrier layer made of silicon nitride, silicon carbide or silicon carbonitride by plasma-enhanced CVD, comprising:
starting plasma discharge for forming the gas barrier layer in a film deposition chamber; and
producing the gas barrier layer by using a plasma after a first predetermined period of time has elapsed from a start of the plasma discharge.
20. The method according to claim 19, wherein the gas barrier layer is formed on a surface of a flexible film.
21. The method according to claim 20, wherein the flexible film is elongated and the gas barrier layer is formed on the surface of the flexible film which travels in a longitudinal direction thereof.
22. The method according to claim 21, wherein marking is made at a specified portion of at least one of the flexible film and the formed gas barrier layer after the first predetermined period of time has elapsed from the start of the plasma discharge.
23. The method according to claim 22, wherein the marking is made by putting a mark which can be visually confirmed.
24. The method according to claim 21,
wherein the elongated flexible film has a film base portion to be served as a product and a guide base portion connected to an advancing end side of the film base portion, the guide base portion being not to be served as a product,
wherein the plasma discharge for forming the gas barrier layer is started before a boundary between the film base portion and the guide base portion reaches the film deposition chamber, and
wherein a point in time when a second predetermined period of time elapsed from entry of the boundary between the film base portion and the guide base portion into the film deposition chamber is regarded as a point in time when the first predetermined period of time has elapsed from the start of the plasma discharge for forming the gas barrier layer.
25. The method according to claim 24, wherein the guide base portion is made of a material which is identical to that of the film base portion.
26. The method according to claim 20, wherein the flexible film comprises a base body and a layer structure formed on the base body including at least one layer, the gas barrier layer being formed on the surface of the layer structure.
27. The method according to claim 20, wherein the flexible film comprises a base body and a layer structure formed on the base body, a first said gas barrier layer being formed on the surface of the layer structure, the layer structure comprising a second gas barrier layer.
28. The method according to claim 20, wherein at least a part of the surface of the flexible film is formed with an organic material.
29. The method according to claim 20, wherein the gas barrier layer is formed with a temperature of the flexible film kept at 120\xb0 C. or less.
30. The method according to claim 19, wherein the gas barrier layer is formed at a static film deposition rate of at least 300 nmmin.
31. The method according to claim 19, wherein the first predetermined period of time is 3 seconds or more.
32. The method according to claim 20, comprising:
starting the plasma discharge with a shutter for preventing formation of the gas barrier layer on the flexible film closed; and
opening the shutter after the first predetermined period of time has elapsed from the start of the plasma discharge to form the gas barrier layer.
33. The method according to claim 32, wherein the shutter is made of a material which is identical to that of the flexible film.
34. The method according to claim 32, wherein the shutter is made of a dielectric material.
35. A gas barrier film for solar batteries obtained by forming a gas barrier layer on a flexible film sheet by the production method according to claim 19.
36. A gas barrier film for displays obtained by forming a gas barrier layer on a flexible film sheet by the production method according to claim 19.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A process for preparing an optically enriched compound of Formula 1
wherein:
the carbon atoms alpha and beta to the carboxy group are stereocenters;
R1 and R\u20321 are each independently H, optionally substituted aliphatic, optionally substituted cycloaliphatic, optionally substituted arylaliphatic, optionally substituted heteroaliphatic or optionally substituted heteroarylaliphatic;
R\u20322 is \u2014NHR2 or \u2014OE;
R2 is H, optionally substituted aliphatic, optionally substituted cycloaliphatic, optionally substituted arylaliphatic, optionally substituted heteroaliphatic or optionally substituted heteroarylaliphatic; and
E is C1-C6 alkyl or benzyl;
comprising the steps of:
a) forming a salt of a compound of Formula 1
b) crystallizing said salt to give a compound of greater than 55% enantiomeric excess.
2. The process of claim 1, wherein R1 is C1-C6 alkyl, R\u20321 is H and R\u20322 is \u2014NHR2 wherein R2 is C1-C6 alkyl or C1-C6 cycloalkyl.
3. The process of claim 2, wherein R1 is propyl and R2 is cyclopropyl.
4. The process of claim 1, further comprising aminating a compound of Formula ii
with an aminating reagent to provide a compound of Formula iii
5. The process of claim 4, wherein the aminating reagent is an azide salt and the intermediate azido compound is reduced by hydrogenation.
6. The process of claim 4, further comprising oxidizing an unsaturated compound of Formula i
wherein R\u20322 is \u2014NHR2 or \u2014OE, wherein E is C1-C5 alkyl or optionally substituted benzyl, with an oxidizing reagent to provide a compound of Formula ii.
7. The process of claim 6, wherein the oxidizing reagent is t-butyl hydroperoxide.
8. The process of claim 6, wherein the oxidizing reagent includes a chiral reagent.
9. The process of claim 8, wherein the oxidizing reagent is a mixture of samarium (III) isopropoxide, triphenyl arsine oxide, S-(\u2212)1,1\u2032-bi-2-naphthol and 4 \u212b molecular sieves.
10. The process of claim 6, wherein the oxidizing reagent is urea-hydrogen peroxide in the presence of trifluoroacetic anhydride.
11. The process of claim 6, wherein R\u20322 is \u2014OE.
12. The process of claim 6, wherein R2 is \u2014NHR2.
13. The process of claim 11, further comprising hydrolyzing the compound of Formula ii to give an acid and then converting the acid to an amide compound of Formula ii wherein R\u20322 is \u2014NHR2.
14. A process for preparing a compound of Formula 1
wherein:
R1 and R\u20321 are each independently H, optionally substituted aliphatic, optionally substituted cycloaliphatic, optionally substituted arylaliphatic, optionally substituted heteroaliphatic or optionally substituted heteroarylaliphatic;
R2 is H, optionally substituted aliphatic, optionally substituted cycloaliphatic, optionally substituted arylaliphatic, optionally substituted heteroaliphatic or optionally substituted heteroarylaliphatic; and
the compound of Formula 1 has an enantiomeric excess of greater than 55%, comprising the steps of:
a) oxidation of an unsaturated compound of Formula i
to provide a compound of formula ii
b) reacting a compound of Formula ii with an aminating reagent to provide a compound of Formula iii
c) forming a salt of a compound of Formula iii with an optically active organic acid;
d) crystallizing said salt to give a compound of greater than 55% enantiomeric excess.
15. The process of claim 14, wherein the compound of Formula 1 is (2S,3S)-3-amino-N-cyclopropyl-2-hydroxyhexanamide.
16. The process of claim 14, wherein the organic acid is L-tartaric acid.
17. The process of claim 14, wherein the organic acid is deoxycholic acid.
18. A compound which is N-cyclopropyl-3-propyloxirane-2-carboxamide.
19. A compound which is N-cyclopropyl-3-propyloxirane-2-carboxamide.
20. A compound which is 3-azido-N-cyclopropyl-2-hydroxyhexanamide.
21. A compound which is 3-amino-N-cyclopropyl-2-hydroxyhexanamide, L-tartaric acid salt.
22. A compound which is 3-amino-N-cyclopropyl-2-hydroxyhexanamide, deoxycholic acid salt.