1. A semiconductor device comprising:
a heat sink provided on at least one side of the semiconductor device; and
an adhesive attaching the heat sink to at least one side of the semiconductor device, wherein
adhesive strength of the adhesive decreases as the temperature of the adhesive increases.
2. The semiconductor device of claim 1, wherein the adhesive includes conductive particles, wherein the conductive particles include at least one of Ag, Cu or Ni, and ceramic particles.
3. The semiconductor device of claim 1, wherein the semiconductor device includes a semiconductor package including at least one semiconductor chip.
4. The semiconductor device of claim 1, wherein the semiconductor device includes a stack package including a plurality of semiconductor packages.
5. The semiconductor device of claim 4, wherein the heat sink is attached to an uppermost semiconductor package of the stack package.
6. The semiconductor device of claim 1, wherein the semiconductor device includes a semiconductor module having at least one semiconductor package mounted on at least one side of a board.
7. The semiconductor device of claim 6, wherein the heat sink is attached to a top surface of the semiconductor package.
8. The semiconductor device of claim 1, wherein the semiconductor device includes a semiconductor module having at least one stack package mounted on at least one side of a board.
9. The semiconductor device of claim 8, wherein the heat sink is attached to a top surface of the stack package.
10. A method of separating a heat sink from at least one side of a semiconductor device attached via at least one adhesive, the method comprising:
heating the heat sink, the adhesive, and the semiconductor device; and
separating the heat sink and the semiconductor device such that no residue remains on the semiconductor device.
11. The method of claim 10, wherein the adhesive is a thermally induced adhesive in which an adhesive strength of the thermally induced adhesive decreases when heated.
12. The method of claim 10, wherein the adhesive includes conductive particles.
13. The method of claim 12, wherein the conductive particles include at least one of Ag, Cu or Ni, and ceramic particles.
14. The method of claim 10, wherein the semiconductor device is one of a semiconductor chip, a semiconductor chip package, a semiconductor stack, and a semiconductor stack package.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A diversity receiving device, comprising:
a plurality of antennas to diversity receive radio waves;
an antenna switching device that selects any one of a plurality of antennas and carries out connection switching thereof;
a demodulation portion that demodulates a wireless signal obtained via an antenna connected by means of the antenna switching device and thus obtains a spread spectrum signal;
a correlation value detection means that finds the correlation value of said spread spectrum signal and a spreading code thereof;
an average value calculation portion that finds the average value per frame of a maximum correlation value output by the correlation value detection means; and
a level comparison device that compares said average value output by the average value calculation portion and a predetermined threshold value, and outputs a control signal to the antenna switching device in order to control antenna switching in the antenna switching device.
2. The diversity receiving device according to claim 1, wherein said antenna switching device switches antennas during a guard time contained in a frame.
3. The diversity receiving device according to claim 1 or claim 2, wherein said correlation value detection means is a digital matched filter.