1. A method of fabricating a semiconductor device, the method comprising:
forming a semiconductor substrate including a bulk substrate layer, the semiconductor substrate extending along a first axis to define a width and a second axis perpendicular to the first axis to define a height;
growing an epitaxial material on a first region of the bulk substrate layer to form a plurality of hetero semiconductor fins; and
selectively etching a second region of the bulk substrate layer different from the first region layer while maintaining the epitaxial material to form a plurality of non-hetero semiconductor fins that are integrally formed from the second region of the bulk substrate layer such that the material of the non-hetero semiconductor fins is different from the epitaxial material.
2. The method of claim 1, wherein the forming the plurality of hetero semiconductor fins and the plurality of non-hetero semiconductor fins further comprises:
forming a hardmask layer on the bulk substrate layer;
forming a plurality of first sacrificial elements and second sacrificial elements different from the first sacrificial elements on the hardmask layer, the plurality of first and second sacrificial elements arranged in an alternating series that extends along the width and between opposing ends of the semiconductor substrate;
removing a first portion of the first sacrificial elements located in the first region of the semiconductor substrate such that a cavity is formed between pairs of high-k elements while maintaining a second portion of the first sacrificial elements located in the second region of the semiconductor substrate, and extending a depth of each cavity to form a plurality of extended cavities in the bulk substrate layer; and
growing an epitaxial material on portions of semiconductor substrate exposed by the cavities to form hetero semiconductor channels having a first width in the first region.
3. The method of claim 2, further comprising removing the second sacrificial elements such that a trench is formed between pairs of first sacrificial elements, and patterning the bulk substrate layer to define a plurality of hetero semiconductor fins including the epitaxial material in the first region and a plurality of non-hetero semiconductor fins in the second region.
4. The method of claim 3, wherein the non-hetero semiconductor fins exclude the epitaxial material.
5. The method of claim 4, wherein a height of the hetero semiconductor fins is different than a height of the non-hetero semiconductor fins.
6. The method of claim 5, wherein the hetero semiconductor fins have a first height and the non-hetero semiconductor fins have a second height that is greater than the first height.
7. The method of claim 5, wherein a width of the hetero semiconductor fins is different than a width of the non-hetero semiconductor fins.
8. The method of claim 7, wherein the hetero semiconductor fins have a first width and the non-hetero semiconductor fins have a second width that is greater than the first width.
9. The method of claim 7, wherein the epitaxial material of the hetero semiconductor fins consists of silicon germanium (SiGe) to define a p-type field effect transistor and the non-hetero semiconductor fins consist of silicon (Si) to define an n-type field effect transistor.
10. The method of claim 3, wherein the removing a first portion of first sacrificial elements includes patterning a masking layer formed on the plurality of first sacrificial elements and second sacrificial elements such that a first portion of the plurality of first sacrificial elements and second sacrificial elements is exposed to define the first region of the semiconductor device while a second portion of the plurality of first sacrificial elements and second sacrificial elements remains covered to define the second region of the semiconductor device, and selectively etching a first portion of the first sacrificial elements located in a first region while maintaining the second sacrificial elements.
11. The method of claim 10, further comprising forming spacers on sidewalls of the second sacrificial elements prior to extending the depth of the cavities, the spacers extending into the cavities and being separated from one another by a distance to define a reduced cavity width.
12. The method of claim 11, wherein a width of the extended cavities matches the reduced cavity width defined by the spacers.
13. The method of claim 10, further comprising laterally etching an inner portion of the bulk substrate layer exposed by the extended cavities such that a width of the extended cavities is increased.
14. The method of claim 10, wherein the patterning the bulk substrate layer includes etching an upper portion of the bulk substrate layer exposed by a respective trench while maintaining an unexposed portion of the bulk substrate layer covered by a respective first sacrificial element to define the hetero semiconductor fins in the first region and a the non-hetero semiconductor fins in the second region.
15. A semiconductor device, comprising:
a semiconductor substrate including a bulk substrate layer that extends along a first axis to define a width and a second axis perpendicular to the first axis to define a height;
a plurality of hetero semiconductor fins including an epitaxial material formed on a first region of the bulk substrate layer; and
a plurality of non-hetero semiconductor fins formed on a second region of the bulk substrate layer different from the first region, the non-hetero semiconductor fins integrally formed from the bulk substrate layer such that the material of the non-hetero semiconductor fins is different from the epitaxial material.
16. The semiconductor device of claim 15, wherein the hetero semiconductor fins have a first height defined by a height of the epitaxial material and the non-hetero semiconductor fins have a second height that is different than the first height.
17. The method of claim 16, wherein the second height of the non-hetero semiconductor fins is greater than the first height of the hetero semiconductor fins.
18. The method of claim 16, wherein the hetero semiconductor fins have a first width defined by a width of the epitaxial material and the non-hetero semiconductor fins have a second width that is different than the first width.
19. The method of claim 18, wherein the second width of the non-hetero semiconductor fins is greater than the first width of the hetero semiconductor fins.
20. The method of claim 18, wherein the epitaxial material of the hetero semiconductor fins consists of silicon germanium (SiGe) to define a p-type field effect transistor and the non-hetero semiconductor fins consist of silicon (Si) to define an n-type field effect transistor.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A vehicle suspension system comprising:
a first suspension member having a first through bore;
a second suspension member having a second through bore;
a ball joint having a shank portion and a ball portion disposed in a socket shell, said ball joint operatively disposed between said first suspension member and said second suspension member for operatively supporting said first suspension member for movement relative to said second suspension member, said ball joint having a first end disposed adjacent said first suspension member and a second end disposed adjacent said second suspension member; and
a ball joint retention member having a first end operatively secured to a first end of said socket shell and a second end operatively secured to said shank portion; wherein said socket shell has a closed end and an open end, said shank portion extending through said open end;
wherein said socket shell defines a first outer diameter, said first end of said socket shell includes a flange at said closed end of said socket shell which defines a second outer diameter which is greater than said first outer diameter of said socket shell, and said first end of said ball joint retention member includes an opening which defines a first end inner diameter which is generally equal to or slightly greater than said first outer diameter of said socket shell and less than said second outer diameter of said flange to enable said first end of said ball joint retention member to be captured between said flange of said first end of said socket shell and an adjacent surface of said first suspension member when said socket shell extends through said first through bore and said opening; and
wherein said external retention member has an intermediate connecting portion extending between said first and second ends of said ball joint retention member, wherein said second end of said ball joint retention member is operatively captured between said second suspension member and a fastener provided on said shank portion when said shank portion extends through bore and an opening in said second end of said ball joint retention member.
2. The vehicle suspension system of claim 1 wherein said ball joint retention member is an external retention member.
3. The vehicle suspension system of claim 1 wherein said intermediate connecting portion is a tether strap formed from a generally flexible high strength material.
4. The vehicle suspension system of claim 1 wherein said first end is a generally flat plate having a circular opening formed therein, said second end is a generally flat plate having a circular opening formed therein, and said intermediate connecting portion is a tether strap formed from a generally flexible high strength material having opposed ends operatively connected to said plates of said first and second ends.
5. The vehicle suspension system of claim 1 wherein said ball joint retention member includes at least one tethering strap.
6. The vehicle suspension system of claim 5 wherein said tethering strap is formed from a generally flexible high strength material.
7. The vehicle suspension system of claim 1 wherein said ball joint retention member includes an intermediate connecting portion which extends between said first and second ends, and wherein said intermediate connecting portion defines an overall length which is at least slightly greater than a chord length of said ball joint when said ball joint is at a maximum length which occurs during a maximum oscillation of said ball joint to thereby allow free movement of said ball joint without any constraint from said ball joint retention member.
8. A vehicle suspension system comprising:
a first suspension member having a first through bore;
a second suspension member having a second through bore;
a ball joint having a shank portion and a ball portion disposed in a socket shell, said ball joint operatively disposed between said first suspension member and said second suspension member for operatively supporting said first suspension member for movement relative to said second suspension member, said ball joint having a first end disposed adjacent said first suspension member and a second end disposed adjacent said second suspension member; and
an external ball joint retention member having a first end, a second end and an intermediate connecting portion, said first end operatively secured to a first end of said socket shell, said second end operatively secured to said shank portion, and said intermediate connecting portion being formed from a generally flexible high strength material; wherein said socket shell has a closed end and an open end, said shank portion extending through said open end;
wherein said socket shell defines a first outer diameter, said first end of said socket shell includes a flange at said closed end of said socket shell which defines a second outer diameter which is greater than said first outer diameter of said socket shell, and said first end of said ball joint retention member includes an opening which defines a first end inner diameter which is generally equal to or slightly greater than said first outer diameter of said socket shell and less than said second outer diameter of said flange to enable said first end of said ball joint retention member to be captured between said flange of said first end of said socket shell and an adjacent surface of said first suspension member when said socket shell extends through said first through bore and said opening; and
wherein said second end of said ball joint retention member is operatively captured between said second suspension member and a fastener provided on said shank portion when said shank portion extends through said second through bore and an opening in said second end of said ball joint retention member.
9. The vehicle suspension system of claim 8 wherein said intermediate connecting portion defines an overall length which is at least slightly greater than a chord length of said ball joint when said ball joint is at a maximum length which occurs during a maximum oscillation of said ball joint to thereby allow free movement of said ball joint without any constraint from said ball joint retention member.
10. The vehicle suspension system of claim 8 wherein said first end is a generally flat plate having a circular opening formed therein, said second end is a generally flat plate having a circular opening formed therein, and said intermediate connecting portion is a tether strap having opposed ends operatively connected to said plates of said first and second ends.