1. A process for the treatment of a component having at least one property that can be modified when subjected to thermal energy levels above a specified treatment level, comprising:
placing a component (1) for treatment, the component having a surface (2) and a depth, and the component being at a thermal energy level below a specified treatment level (7);
subjecting the placed component to a power flux (4) generated by a particle emission apparatus (3) located proximate to the surface (2) of the component; and
regulating the particle emission apparatus to (i) produce, for a specified time, at least one pulse having a thermal energy profile that includes thermal energy levels above and below the specified treatment level (7) and a maximum (5a) thermal energy level above the specified treatment level, (ii) localize the thermal energy levels above the specified treatment level (7) in at least one zone (6)
that is a distance from the surface (2) and in the depth, and (iii) localize the thermal energy levels below the specified treatment level (7) between the surface (2) and the at least one zone (6), wherein,
the location of the at least one zone (6) is determined by the location in the depth of the thermal energy levels above the specified treatment level (7),
at least one property of the component is modified in the at least one zone (6), and
the component is not modified between the surface (2) and the at least one zone (6).
2. The process of claim 1, further comprising choosing a power flux exclusively adapted for producing the pulse with the thermal energy profile.
3. The process of claim 1, wherein the thermal energy level corresponds to a temperature.
4. The process of claim 1, wherein the component is made of a single constituent material or of several parts of different materials.
5. The process of claim 1, wherein the component has a surface structure andor a volume structure.
6. The process of claim 1, wherein the power flux consists of a flux of particles selected from the group consisting of electrons, protons, ions, atoms, molecules and combinations thereof.
7. The process of claim 1, wherein,
the power flux is formed by a flux of particles comprising elements of atomic number Z less than or equal to six, which are not dopants for a constituent material or materials of the component, and
the elements are in a form selected from the group consisting of isotopes, molecular form, ions, and a neutral state.
8. The process of claim 1, wherein the particles are essentially monokinetic.
9. The process of claim 1, wherein the at least one zone comprises a constituent material and impurities.
10. The process of claim 9, wherein the impurities have a segregation coefficient, relative to the constituent material of the at least one zone, of less than one.
11. The process of claim 9, further comprising introducing the impurities into the constituent material prior to treating the component.
12. The process of claim 9, wherein the step of introducing the impurities includes at least one epitaxial growth.
13. The process of claim 9, wherein the impurities are introduced at least partly during subjecting the component to the power flux.
14. The process of claim 1, wherein the at least one zone comprises silicon as a constituent material and impurities selected from the group consisting of aluminium, bismuth, gallium, indium, antimony, tin, and combinations thereof.
15. The process of claim 1, wherein the at least one zone comprises silicon-germanium as a constituent material.
16. The process of claim 1, wherein the particle emission apparatus produces a power flux that is constant over time and moves the power flux with respect to the component so that a given region of the component is exposed to the flux only for one or more time intervals corresponding to the duration of the pulses.
17. The process of claim 1, wherein the power flux is spatially constant with respect to the component and the power flux has an intensity in the form of one or more pulses so as to vary the flux as a function of time.
18. The process of claim 1, further comprising regulating the particle emission apparatus to vary the location of the maximum thermal energy level of the pulse relative to the at least one zone.
19. The process of claim 1, wherein the power flux is chosen so as to produce a pulse having a thermal energy profile that includes thermal energy levels above the specified thermal energy level sufficient to liquefy a constituent material of the at least one zone.
20. The process of claim 1, wherein the power flux is chosen so as to produce a pulse having a thermal energy profile that includes thermal energy levels above the specified thermal energy level sufficient to generate inclusions in a constituent material of the at least one zone.
21. The process of claim 20, wherein said inclusions are selected from the group consisting of precipitates, bubbles, microbubbles, defects, changes of phase, of chemical composition, fractures, cavities and combinations thereof.
22. The process of claim 1, wherein the power flux is chosen so as to produce a pulse having a thermal energy profile that includes thermal energy levels above the specified thermal level sufficient to weaken the at least one zone.
23. The process of claim 1, wherein the power flux is chosen so as to produce a pulse having a thermal energy profile that includes thermal energy levels above the specified thermal level sufficient to weld or braze together two parts of the component that are in contact with one another in the at least one zone.
24. A process for the treatment of a component having at least one property that can be modified when subjected to thermal energy levels above a specified treatment level corresponding to a specified temperature level, consisting of:
placing a component (1) for treatment, the component having a surface (2) and a depth, and the component being at a temperature level below a specified temperature level (7);
subjecting the placed component to a power flux (4) generated by a particle emission apparatus (3) located proximate to the surface (2) of the component; and
regulating the particle emission apparatus to (i) produce, for a specified time, at least one pulse having a thermal energy profile that includes temperature levels above and below the specified temperature level (7) and a maximum (5a) temperature level above the specified temperature level, (ii) localize the temperature levels above the specified treatment level (7) in at least one zone (6) that is a distance from the surface (2) and in the depth, and (iii) localize the temperature levels below the specified temperature level (7) between the surface (2) and the at least one zone (6), wherein,
the location of the at least one zone (6) is determined by the location in the depth of the temperature levels above the specified temperature level (7),
at least one property of the component is modified in the at least one zone (6), and
the component is not modified between the surface (2) and the at least one zone (6).
25. The process of claim 24, wherein the power flux consists of a flux of particles selected from the group consisting of electrons, protons, ions, atoms, molecules and combinations thereof.
26. The process of claim 24, wherein the power flux is formed by a flux of particles consisting or composed of elements of atomic number Z less than or equal to six, which are not dopants for the constituent material or materials of said component, in any one of their isotopic species, in any one of their molecular forms and in any ionization state, including the neutral state.
27. A process for the treatment of a component having at least one property that can be modified when subjected to thermal energy levels above a specified treatment level, consisting of:
placing a component (1) for treatment, the component having a surface (2) and a depth, and the component being at a thermal energy level below the specified treatment level (7);
subjecting the placed component to a power flux (4) generated by a particle emission apparatus (3) located proximate to the surface (2) of the component; and
regulating the particle emission apparatus to (i) produce, for a specified time, at least one pulse having a thermal energy profile that includes thermal energy levels above and below the specified treatment level (7) and a maximum (5a) thermal energy level above the specified treatment level, (ii) localize the thermal energy levels above the specified treatment level (7) in at least one zone (6) that is a distance from the surface (2) and in the depth, (iii) localize the thermal energy levels below the specified treatment level (7) between the surface (2) and the at least one zone (6), wherein,
the power flux consists of a flux of particles selected from the group consisting of electrons, protons, ions, atoms, molecules and combinations thereof,
the location of the at least one zone (6) is determined by the location in the depth of the thermal energy levels above the specified treatment level (7),
a constituent material of the component is liquefied in the at least one zone (6), and
the component is not liquefied between the surface (2) and the at least one zone (6).
28. The process of claim 27, wherein the particles are essentially monokinetic.
29. A process for the treatment of a component having at least one property that can be modified when this zone is subjected to thermal energy levels above a specified treatment level, consisting of:
placing a component (1) for treatment, the component having a surface (2) and a depth, and the component being at a thermal energy level below a specified level (7);
subjecting the placed component to a power flux (4) generated by a particle emission apparatus (3) located proximate to the surface (2) of the component; and
regulating the particle emission apparatus to (i) produce, for a specified time, at least one pulse having a thermal energy profile that includes thermal energy levels above and below the specified treatment level (7) and a maximum (5a) thermal energy level above the specified treatment level, (ii) localize the thermal energy levels above the specified treatment level (7) in at least one zone (6) that is a distance from the surface (2) and in the depth, (iii) localize the thermal energy levels below the specified treatment level (7) between the surface (2) and the at least one zone (6), wherein,
the power flux is formed by a flux of particles comprising elements of atomic number Z less than or equal to six, which are not dopants for a constituent material or materials of the component,
the elements are in a form selected from the group consisting of isotopes, molecular form, ions, and a neutral state,
the location of the at least one zone (6) is determined by the location in the depth of the thermal energy levels above the specified treatment level (7),
a constituent material of the component is liquefied in the at least one zone (6), and
the component is not liquefied between the surface (2) and the at least one zone (6).
30. The process of claim 29, wherein the particles are essentially monokinetic.
31. A process for the treatment of a component having at least one property that can be modified when subjected to thermal energy levels above a specified treatment level, consisting of:
placing a component (1) for treatment, the component having a surface (2) and a depth, and the component being at a thermal energy level below a specified treatment level (7);
subjecting the placed component to a power flux (4) generated by a particle emission apparatus (3) located proximate to the surface (2) of the component; and
regulating the particle emission apparatus to (i) produce, for a specified time, at least one pulse having a thermal energy profile that includes thermal energy levels above and below the specified treatment level (7) and a maximum (5a) thermal energy level above the specified treatment level, (ii) localize the thermal energy levels above the specified treatment level (7) in at least one zone (6) that is a distance from the surface (2) and in the depth, (iii) localize the thermal energy levels below the specified treatment level (7) between the surface (2) and the at least one zone (6), wherein,
the component is chosen so as to include at least in the at least one zone (6) impurities having a segregation coefficient, relative to a constituent material of the component in the at least one zone (6), of less than one,
the location of the at least one zone (6) is determined by the location in the depth of the thermal energy levels above the specified treatment level (7),
the constituent material is liquefied in the at least one zone (6), and
the component is not liquefied between the surface (2) and the at least one zone (6).
32. The process of claim 31, wherein,
the constituent material of the at least one zone to be treated comprises silicon, and
the at least one zone to be treated contains impurities from selected from the group consisting of aluminium, bismuth, gallium, indium, antimony, tin, and combinations thereof.
33. The process of claim 31, wherein the constituent material of the at least one zone to be treated comprises silicon germanium.
34. A process for the treatment of a component having at least one property that can be modified when subjected to thermal energy levels above a specified treatment level, consisting of:
placing a component (1) for treatment, the component having a surface (2) and a depth, and the component being at a thermal energy level below a specified treatment level (7);
subjecting the placed component to a power flux (4) generated by a particle emission apparatus (3) located proximate to the surface (2) of the component; and
regulating the particle emission apparatus to (i) produce, for a specified time, at least one pulse having a thermal energy profile that includes thermal energy levels above and below the specified treatment level (7) and a maximum (5a) thermal energy level above the specified treatment level, (ii) localize the thermal energy levels above the specified treatment level (7) in at least one zone (6) that is a distance from the surface (2) and in the depth, (iii) localize the thermal energy levels below the specified treatment level (7) between the surface (2) and the at least one zone (6), wherein,
the power flux is constant over time,
the power flux position varies with respect to the component so that a given zone sees the flux only for one or more time intervals corresponding to the duration of the pulse,
the location of the at least one zone (6) is determined by the location in the depth of the thermal energy levels above the specified treatment level (7),
a constituent material of the component is liquefied in the at least one zone (6), and
the component is not liquefied between the surface (2) and the at least one zone (6).
35. The process of claim 34, wherein the power flux consists of a flux of particles selected from the group consisting of electrons, protons, ions, atoms, molecules and combinations thereof.
36. The process of claim 34, wherein,
the power flux is formed by a flux of particles comprising elements of atomic number Z less than or equal to six, which are not dopants for a constituent material or materials of the component, and
the elements are in a form selected from the group consisting of isotopes, molecular form, ions, and a neutral state.
37. A process for the treatment of a component having at least one property that can be modified when subjected to thermal energy levels above a specified treatment level, consisting of:
placing a component (1) for treatment, the component having a surface (2) and a depth, and the component being at a thermal energy level below a specified treatment level (7);
subjecting the placed component to a power flux (4) generated by a particle emission apparatus (3) located proximate to the surface (2) of the component; and
regulating the particle emission apparatus to (i) produce, for a specified time, at least one pulse having a thermal energy profile that includes thermal energy levels above and below the specified treatment level (7) and a maximum (5a) thermal energy level above the specified treatment level, (ii) localize the thermal energy levels above the specified treatment level (7) in at least one zone (6) that is a distance from the surface (2) and in the depth, (iii) localize the thermal energy levels below the specified treatment level (7) between the surface (2) and the at least one zone (6), wherein,
the power flux is spatially constant with respect to the at least one zone (6),
the power flux is in the form of one or more pulses so as to vary the as a function of time,
the location of the at least one zone (6) is determined by the location in the depth of the thermal energy levels above the specified treatment level (7),
a constituent material of the component is liquefied in the at least one zone (6), and
the component is not liquefied between the surface (2) and the at least one zone (6).
38. The process of claim 37, wherein the power flux consists of a flux of particles selected from the group consisting of electrons, protons, ions, atoms, molecules and combinations thereof.
39. The process of claim 1, wherein,
the power flux is formed by a flux of particles comprising elements of atomic number Z less than or equal to six, which are not dopants for a constituent material or materials of the component, and
the elements are in a form selected from the group consisting of isotopes, molecular form, ions, and a neutral state.
40. A process for the treatment of a component, having at least one property that can be modified when subjected to thermal energy levels above a specified treatment level, consisting of:
placing a component (1) for treatment, the component having a surface (2) and a depth, and the component being at a thermal energy level below a specified treatment level (7);
subjecting the placed component to a power flux (4) generated by a particle emission apparatus (3) located proximate to the surface (2) of the component; and
regulating the particle emission apparatus to (i) produce, for a specified time, at least one pulse having a thermal energy profile that includes thermal energy levels above and below the specified treatment level (7) and a maximum (5a) thermal energy level above the specified treatment level, (ii) localize the thermal energy levels above the specified treatment level (7) in at least one zone (6) that is a distance from the surface (2) and in the depth, (iii) localize the thermal energy levels below the specified treatment level (7) between the surface (2) and the at least one zone (6), wherein,
the location of the at least one zone (6) is determined by the location in the depth of the thermal energy levels above the specified treatment level (7),
inclusions are generated in a constituent material of the component in the at least one zone (6), and
inclusions are not generated in a constituent material between the surface (2) and the at least one zone (6).
41. The process of claim 40, wherein the specified thermal energy level corresponds to a specified temperature.
42. The process of claim 40, wherein the at least one zone comprises silicon as a constituent material and impurities selected from the group consisting of aluminium, bismuth, gallium, indium, antimony, tin, and combinations thereof.
43. The process of claim 40, wherein the constituent material the at least one zone comprises silicon-germanium.
44. A process for the treatment of a component having at least one property that can be modified when subjected to thermal energy levels above a specified treatment level, consisting of:
placing a component (1) for treatment, the component having a surface (2) and a depth, and the component being at a thermal energy level below a specified treatment level (7);
subjecting the placed component to a power flux (4) generated by a particle emission apparatus (3) located proximate to the surface (2) of the component; and
regulating the particle emission apparatus to (i) produce, for a specified time, at least one pulse having a thermal energy profile that includes thermal energy levels above and below the specified treatment level (7) and a maximum (5a) thermal energy level above the specified treatment level, (ii) localize the thermal energy levels above the specified treatment level (7) in at least one zone (6) that is a distance from the surface (2) and in the depth, (iii) localize the thermal energy levels below the specified treatment level (7) between the surface (2) and the at least one zone (6), wherein,
the location of the at least one zone (6) is determined by the location in the depth of the thermal energy levels above the specified treatment level (7),
the component is weakened in the at least one zone (6), and
the component is not weakened between the surface (2) and the at least one zone (6).
45. The process of claim 44, wherein the specified thermal energy level corresponds to a specified temperature.
46. The process of claim 44, wherein the at least one zone comprises silicon as a constituent material and impurities selected from the group consisting of aluminium, bismuth, gallium, indium, antimony, tin, and combinations thereof.
47. The process of claim 44, wherein the constituent material of the at least one zone comprises silicon-germanium.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for producing a memory component comprising a memory cell region having memory cells and first control electrode tracks for driving individual memory cells and a peripheral region having peripheral elements and second control electrode tracks for driving the peripheral elements, comprising:
applying, in a first direction, to a provision of a substrate having memory cell structures, an insulation layer, a layer stack and a patterning layer;
applying a first mask layer on the patterning layer in the first direction;
patterning the first mask layer in the first direction, the first mask layer comprising, in the memory cell region and the peripheral region, closed regions, in which the first mask layer is not removed and which are assigned to the first and second control electrode tracks, and open regions, in which the first mask layer is removed, in at least one second direction perpendicular to the first direction;
transferring the mask structure of the first mask layer to the patterning layer in the first direction, such that the structure of the patterning layer corresponds to the mask structure;
removing the first mask layer;
filling open regions of the patterning layer in at least the memory cell region with a protective material, such that the open regions are filled with the protective material in the second direction in a manner essentially flush with the patterning layer;
selectively setting the expansion of closed regions of the patterning layer in the peripheral region in at least the second direction, such that the expansion of closed regions bounded by at least one open region of the patterning layer, the open region having no protective material, is set;
removing the protective material in the memory cell region and in the peripheral region selectively with respect to the patterning layer and the layer stack;
transferring the structures of the patterning layer in the first direction to the layer stack to produce the first and the second control electrode tracks.
2. The method as claimed in claim 1, in which the filling comprises:
applying the protective material in the memory cell region and the peripheral region.
3. The method as claimed in claim 2, in which the filling further comprises:
direction-selective removing the protective material in the first direction, such that the protective material is removed in the first direction from the upper ends of the closed regions of the patterning layer, and the open regions are filled with the protective material in at least the second direction in a manner essentially flush with the upper ends of the closed regions of the patterning layer.
4. The method as claimed in claim 3, in which the filling further comprises:
applying a second mask layer at least on the memory cell region.
5. The method as claimed in claim 4, in which the filling further comprises:
removing the protective material in the regions of the peripheral region which are not covered by the second mask layer, selectively with respect to the patterning layer and the layer stack.
6. The method as claimed in claim 5, in which the filling further comprises:
removing the second mask layer.
7. The method as claimed in claim 5, in which removing the protective material in the regions of the peripheral region which are not covered by the second mask layer comprises removing the protective material using hydrofluoric acid.
8. The method as claimed in claim 1, in which the selectively setting further comprises:
partially removing the patterning layer in the memory cell region and in the peripheral region selectively with respect to the protective material.
9. The method as claimed claim 8, in which partially removing the patterning layer comprises removing the patterning layer using a mixture of hydrofluoric acid and ethylene glycol.
10. The method as claimed in claim 1, in which the patterning of the first mask layer comprises patterning by means of photolithography.
11. The method as claimed in claim 1, in which the transfer of the mask structure of the first mask layer to the patterning layer comprises selectively etching the patterning layer.
12. The method as claimed in claim 1, in which the transfer of the structures of the patterning layer to the layer stack comprises selectively etching the layer stack with respect to the insulation layer.
13. The method as claimed in claim 1, in which the layer stack has a control electrode layer and a conductivity increasing layer.
14. The method as claimed in claim 13, in which the control electrode layer comprises polysilicon.
15. The method as claimed in claim 13, in which the conductivity increasing layer comprises tungsten silicide.
16. The method as claimed in claim 13, in which the patterning layer comprises silicon nitride.
17. The method as claimed in claim 13, in which the first andor the second mask layer comprise a resist layer.
18. The method as claimed in claim 1, in which the provision comprises:
a provision of the insulation layer having insulators which are embedded in the substrates and which isolate the memory cell regions from the peripheral regions.
19. The method as claimed in claim 1, in which the memory component comprises a dynamic random access memory.
20. The method as claimed in claim 1, in which the first and second control electrode tracks comprise gate stacks of MOS field-effect transistors.
21. The method as claimed in claim 1, in which the substrate comprises silicon.
22. The method as claimed in claim 1, in which the insulation layer comprises silicon oxide.
23. The method as claimed in claim 1, in which the protective layer comprises an oxide.
24. The method as claimed in claim 23, in which the oxide is formed by means of a subatmospheric chemical vapor deposition or a low pressure chemical vapor deposition.