1. A method for manufacturing an SOI substrate, comprising the steps of:
polishing a first surface of a semiconductor substrate;
forming an embrittled region in the semiconductor substrate by irradiating a second surface of the semiconductor substrate which is opposite to the first surface with ions;
attaching the semiconductor substrate to a base substrate while the second surface of the semiconductor substrate faces the base substrate;
forming a semiconductor layer over the base substrate by separating a part of the semiconductor substrate from the rest of the semiconductor substrate along the embrittled region; and
thinning the semiconductor layer by etching,
wherein the step of polishing the first surface of the semiconductor substrate is performed by performing chemical mechanical polishing using a first slurry on the first surface of the semiconductor substrate and then performing chemical mechanical polishing using a second slurry on the first surface of the semiconductor substrate, and
wherein the step of polishing the first surface of the semiconductor substrate is performed before the step of forming the embrittled region in the semiconductor substrate.
2. The method for manufacturing an SOI substrate, according to claim 1,
wherein \u03c3 denotes a standard deviation of a thickness of the semiconductor layer, and
wherein 3\u03c3 is less than or equal to 1.5 nm.
3. The method for manufacturing an SOI substrate, according to claim 1, wherein the first surface of the semiconductor substrate is planarized by the step of polishing.
4. The method for manufacturing an SOI substrate, according to claim 1, wherein the semiconductor substrate and the base substrate are heated in the separation of the semiconductor layer.
5. The method for manufacturing an SOI substrate, according to claim 1, wherein the step of polishing is performed by mechanical polishing or chemical mechanical polishing.
6. The method for manufacturing an SOI substrate, according to claim 1, wherein a source gas of the ions is a gas containing hydrogen.
7. A method for manufacturing an SOI substrate, comprising the steps of:
polishing a first surface of a semiconductor substrate;
forming a first insulating layer on the semiconductor substrate;
forming an embrittled region in the semiconductor substrate by irradiating a second surface of the semiconductor substrate which is opposite to the first surface with ions;
forming a second insulating layer over a base substrate;
attaching the semiconductor substrate to the base substrate with the first insulating layer and the second insulating layer interposed between the semiconductor substrate and the base substrate;
forming a semiconductor layer over the base substrate by separating a part of the semiconductor substrate from the rest of the semiconductor substrate along the embrittled region; and
thinning the semiconductor layer by etching,
wherein the step of polishing the first surface of the semiconductor substrate is performed by performing chemical mechanical polishing using a first slurry on the first surface of the semiconductor substrate and then performing chemical mechanical polishing using a second slurry on the first surface of the semiconductor substrate, and
wherein the step of polishing the first surface of the semiconductor substrate is performed before the step of forming the embrittled region in the semiconductor substrate.
8. The method for manufacturing an SOI substrate, according to claim 7,
wherein \u03c3 denotes a standard deviation of a thickness of the semiconductor layer, and
wherein 3\u03c3 is less than or equal to 1.5 nm.
9. The method for manufacturing an SOI substrate, according to claim 7, wherein the first surface of the semiconductor substrate is planarized by the step of polishing.
10. The method for manufacturing an SOI substrate, according to claim 7, wherein the semiconductor substrate and the base substrate are heated in the separation of the semiconductor layer.
11. The method for manufacturing an SOI substrate, according to claim 7, wherein the step of polishing is performed by mechanical polishing or chemical mechanical polishing.
12. The method for manufacturing an SOI substrate, according to claim 7, wherein a source gas of the ions is a gas containing hydrogen.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A developer container comprising:
a developer containing part that has an cylindrical hollow shape inside and contains developer therein; and
an agitation member that is elastic and rotatably provided inside the developer containing part, rotating around a rotation axis that is a center of the cylindrical hollow shape, having at least a side edge extending substantially orthogonal to the rotation axis, wherein
the developer containing part has a side wall part on one end thereof in a direction of the rotation axis of the agitation member, the side wall part extending to correspond to the side edge of the agitation member and the agitation member scraping a surface of the side wall part while the agitation member rotates,
the side wall part has a projection part that projects toward inside of the developer containing part so that the side edge of the agitation member is elastically deformed by the projection part when passing over the projection part.
2. The developer container according to claim 1, wherein
the agitation member is composed with an elastically deformable agitation part and a support part, which are combined each other,
the agitation part has basically a quadrangle shape, one of longitudinal edges thereof being a proximal end that is attached to the support part, the other of longitudinal edges being a distal edge that is farther to the rotation axis than the proximal edge and extending substantially parallel to the rotation axis, the side edge connecting the distal and proximal edges,
the support part is a shaft rotating around the rotation axis.
3. The developer container according to claim 2, wherein
a distance from the rotation axis to the distal edge of the agitation part is longer than an inner radius of the developer containing part.
4. The developer container according to claim 3, wherein
due to rotation of the agitation member, the distal edge of the agitation part scrapes an inner peripheral surface of the developer container.
5. The developer container according to claim 3, wherein,
the developer containing part further has
a supply port for supplying the developer contained therein to outside, and
a shutter that is in a thin tube shape of which an outer diameter fits to an inner diameter of the cylindrical hollow shape of developer containing part, rotating around the rotation axis, and having an opening that corresponds to the supply port so that the developer inside goes downwardly through the supply port and the opening when the supply port meets the opening,
due to rotation of the agitation member, the distal edge of the agitation part scrapes an inner peripheral surface of the shutter.
6. The developer container according to claim 2, wherein
the agitation part has a slit that extends from the distal edge in a direction substantially orthogonal to the rotation axis.
7. The developer container according to claim 2, wherein
in the direction of the rotation axis, a distance (D1) that is measured from the side edge of the agitation part to the slit, and a distance (D2) that is measured from a wall surface of the side wall part to a distal end of the projection part satisfy a relation below:
D1>D2.
8. The developer container according to claim 2, wherein
in a direction orthogonal to the rotation axis, a distance (L1), which is measured from the rotation axis to a slit end of the slit of the agitation part, and a distance (L2), which is measured from the rotation axis to the projection part of the side wall part, satisfy a relation below:
L1<L2.
9. The developer container according to claim 8, wherein
the distance (L1) of the agitation part and the distance (L2) of the projection part further satisfy a relation below:
1.3\xd7L1\u2266L2\u22661.8\xd7L1.
10. The developer container according to claim 2, wherein
the agitation part and the support part are separately formed, and
the agitation part is attached to the support part in such a manner that two side ends of the agitation part in the direction of the rotation axis move, in a rotation direction of the agitation member, ahead of a central part of the agitation part in the direction of the rotation axis.
11. The developer container according to claim 2, wherein
the agitation part and the support part are separately formed,
the agitation part has a constant width in the orthogonal direction, having a plurality of slits arranged with an interval, the slits extending from the distal edge toward the proximal edge, and
the support part has side heights (d2) at the both ends in the rotation axis and has a height (d1) at the middle in the rotation axis, the side heights (d2) being greater than the height (d1).
12. The developer container according to claim 2, wherein
the agitation part is rectangle,
another side edge is arranged, which is on the other end from the side edge in the direction of the rotation axis,
the side edge and the another side edge extend perpendicular to the rotation axis,
the developer containing part has another side wall part on the other end in the direction of the rotation axis,
the another side wall part has a projection part that projects toward the inside of the developer containing part, and
the another side edge scraps a surface of the another side wall part while the agitation member rotates.
13. The developer container according to claim 12, wherein
the agitation part has a strip-like portion between each of side edges of the agitation part and slits adjacent to the each of the side edges, the strip-like portion having a predetermined length (D1) in the direction of the rotation axis, the side edges respectively opposing the side wall parts of the developer containing part and the slits extending in a direction substantially orthogonal to the rotation axis from the distal edge of the agitation part.
14. An image forming apparatus comprising:
the image forming unit according to claim 12.
15. The developer container according to claim 1, wherein
the developer containing part has a supply port for supplying the developer contained therein to outside, and
the projection part is arranged at a position that is in the vicinity of and above the supply port in a cross section orthogonal to the rotation axis.
16. The developer container according to claim 1, wherein
the projection part is composed with a plurality of the projection parts, and
the projection parts are arranged on outer circumference of the side wall part, all of which are facing in the same direction.
17. The developer container according to claim 1, wherein
the projection part has a sloped part of which an amount of projection toward the inside of the developer containing part increases as the sloped part separates away from the rotation axis.
18. An image forming unit comprising:
the developer container according to claim 1.
19. An image forming apparatus comprising:
the developer container according to claim 1.