1. A magnetic-pattern transfer master disk for transferring a predetermined magnetic pattern onto a magnetic recording medium that can record magnetic information, said wherein a surface of the master disk facing the recording medium during the transfer operation comprises:
magnetic pattern regions in which magnetic layers are formed; and
blank regions in which the magnetic layers are not formed,
wherein said blank regions form concave portions relative to said magnetic pattern regions,
said blank regions having a larger combined surface area than said magnetic pattern regions, and
wherein said blank regions are adjacent to said magnetic regions, and upon performing a magnetic transfer operation between said master disk and said recording medium, of said blank regions and said magnetic pattern regions, only said magnetic pattern regions contact the surface of the magnetic recording medium.
2. The magnetic-pattern transfer master disk as claimed in claim 1, wherein a reinforcing member for reinforcing the concave portion is provided in the concave portion.
3. The magnetic-pattern transfer master disk as claimed in claim 2, wherein the reinforcing member is formed as a beam that extends in a width direction of the concave portion or pillars scattered in the concave portion.
4. The magnetic-pattern transfer master disk as claimed in claim 3, wherein a plurality of the reinforcing members, which form beams and have widths that are smaller than a magnetic pattern width, are arranged at predetermined intervals.
5. The magnetic-pattern transfer master disk as claimed in claim 3, wherein a plurality of the pillars have a diameter smaller than a magnetic pattern width and are arranged at predetermined intervals.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of removing metal-containing material, comprising:
exposing the metal-containing material to a solution comprising at least about 10 weight percent H2O2 and from greater than 0 weight percent to less than about 2 weight percent of a nitrogen-containing compound;
wherein the metal-containing material is received between polycrystalline silicon and borophosphosilicate glass, one side of the metal-containing material being directly against the polycrystalline silicon and an opposing side of the metal-containing material being directly against the borophosphosilicate glass;
wherein the solution has a selectivity for removing the metal-containing material relative to the polycrystalline silicon and the borophosphosilicate glass of at least 600:1; and
wherein the exposing of the metal-containing material to the solution removes the metal-containing material from between the polycrystalline silicon and the borophosphosilicate glass to form a space between the polycrystalline silicon and the borophosphosilicate glass.
2. The method of claim 1 wherein the selectivity for removing the metal-containing material relative to the polycrystalline silicon and the borophosphosilicate glass is at least 10,000:1.
3. The method of claim 1 wherein the metal-containing material comprises a metal nitride.
4. The method of claim 1 wherein the metal-containing material consists essentially of a metal nitride.
5. The method of claim 1 wherein the metal-containing material consists of a metal nitride.
6. The method of claim 1 wherein the metal-containing material comprises titanium nitride.
7. The method of claim 1 wherein the metal-containing material consists essentially of titanium nitride.
8. The method of claim 1 wherein the metal-containing material consists of titanium nitride.
9. The method of claim 1 wherein the nitrogen-containing compound is ammonia or ammonium.
10. The method of claim 1 wherein the nitrogen-containing compound is tetra-methyl ammonium hydroxide.
11. The method of claim 1 wherein a temperature of the solution is maintained at from about 65\xb0 C. to about 95\xb0 C. during the exposing.
12. The method of claim 11 wherein the temperature of the solution is maintained at from about 85\xb0 C. to about 95\xb0 C. during the exposing.
13. The method of claim 1 wherein the solution consists of water, H2O2 and ammonium hydroxide when the exposing is initiated.
14. The method of claim 1 wherein the solution consists of water, EDTA, H2O2 and ammonium hydroxide when the exposing is initiated.
15. The method of claim 1 wherein the solution consists of water, H2O2 and ammonium phosphate when the exposing is initiated.