1. A composite building component comprising:
a. spaced pairs of elongate members, the members of each pair being in face to face contacting orientation;
b. a generally sinuous shaped spacer rod sub assembly having spacer portions connected at junctures;
c. the elongate member pairs each having mating faces including recesses each contoured to receive one of the junctures and parts of connected spacer portions, the connected spacer portions projecting angularly in opposed directions from their associated juncture and its recess in one of the pairs toward the other pair of members; and,
d. each of the junctures being disposed in an associated recess whereby to provide a composite component having the pairs of elongate members maintained in spaced relationship by the rod subassembly.
2. The component of claim 1 wherein the rod junctures in the recesses of the one pair are interconnected by an elongate rod.
3. The component of claim 2 wherein the recesses of the one pair are in a first of the pair and the other of said one pair includes an elongate recesses receiving the elongate rod.
4. The component of claim 2 wherein the junctures in the recesses of the other pair of members are interconnected by another elongate rod.
5. The component of claim 4 wherein the recesses of the other pair of members are in a first of the other pair and the other member of the other pair includes an elongate recess receiving said another elongate rod.
6. A composite building component comprising:
a. a spaced pair of elongate rods,
b. a plurality of serpentine rods each rod having two spaced sets of junctures;
c. the junctures of one set being fused to one of the elongate rods and the junctures of the other set being fused to the other of the elongate rods;
d. spaced pairs of elongate wood members with the members of each pair being in face to face contacting relationship;
e. one member of each wood pair having an elongate groove in its face sized to receive an associated one of the elongate rods;
f. the other member of each wood pair having spaced contoured recesses each housing an associated one of the junctures whereby the serpentine rods and junctures are each disposed between the members of an associated one of the wood pairs; and,
g. at least two composite members disposed between the elongate wood members covering a portion of said serpentine rods and on opposite sides of the serpentine rods whereby to provide a composite component strengthened by metal rods while having the appearance of a wood structure.
7. The component of claim 6 wherein the rods are steel and the fusing of the rods is by welds.
8. The component of claim 6 wherein the composite members are wood composites.
9. The component of claim 6 wherein the composite members are plywood.
10. The component of claim 6 wherein sections of the serpentine rods between the junctures are straight.
11. The component of claim 6 wherein the serpentine rod is comprised of a plurality of parts each having a straight central portion and curved ends, each curved end being joined to a like curved end of another part to form one of the junctures.
12. A process of making a composite building component comprising:
a. forming a metal reenforcement by connecting a plurality of sinusoidal section sections to a spaced pair of reenforcing rods;
b. forming grooves in each of two pairs of elongate wood members with the grooves being shaped to receive top and bottom portions of the reenforcement;
c. bring the members of each pair into face to face engagement with one of the pairs encasing the top portion and the other of the pairs encasing the bottom portion; and,
d. securing a pair of wood side panels in facing spaced relationship between the member pairs and on opposite sides of a central portion of the reenforcement whereby to provide a composite component with the reenforcement circumferentially encased in wood to provide the appearance and workability of a wood component.
13. The component of claim 1, wherein two composite members on opposite sides of the sinuous shaped spacer rod sub assembly, and cover a portion of said sinuous shaped spacer rod sub assembly.
14. The component of claim 13, wherein said composite members are of varying thicknesses.
15. The component of claim 13, wherein said composite members cover the entire sinuous shaped spacer rod sub assembly.
16. The component of claim 13, wherein said composite members extend to the circumference of said elongate members.
17. The component of claim 13, wherein said composite members are disposed between said elongate members.
18. The composite building component of claim 6, wherein said composite members are of varying thickness.
19. The composite building component of claim 6, wherein said composite members cover a portion of said elongate wood members.
20. The composite building component of claim 10, wherein said composite members enclose the serpentine rods.
21. The composite building component of claim 6, wherein said composite members cover the perimeter of said elongate wood members.
22. The process of making a composite building component of claim 12, wherein said wood side panels provide a composite component with reenforcement partially encased in wood.
23. The component of claim 1, wherein said spacer portions include a gap between said spacer portions at their associated juncture.
24. The component of claim 1, wherein said spacer portions include arcuately curved end parts.
25. The component of claim 2, wherein said spacer portions include a gap between said spacer portions at their associated juncture for fusing said spacer portions to said elongate rod.
26. The component of claim 25, wherein the spacer portions and said elongate rod are steel and said fusing of said rods is by welds.
27. The component of claim 1, wherein said recesses are arcuate.
28. The component of claim 6, wherein spaced contoured recesses are arcuate.
29. The component of claim 6, wherein said spaced set of junctures includes a gap for welding said elongate rods to said serpentine rods.
30. The component of claim 6, wherein said plurality of serpentine rods each comprise a straight portion having two directionally opposed semi-arcuate ends.
31. A composite beam comprising:
a. a spaced pair of elongate rods,
b. a plurality of serpentine rods having a straight portion and a pair of opposing arcuate ends;
c. each pair of serpentine rods further forming a plurality of spaced sets of junctures at said arcuate ends;
d. the junctures of a first set being fused to one of the elongate rods and the junctures of a second set being fused to the other of the elongate rods;
e. a spaced pair of elongate wood members with the members of each pair being in face to face contacting relationship;
f. one member of each elongate wood member pair having an elongate groove in its face sized to receive an associated one of the elongate rods;
g. the other member of each elongate wood member pair having spaced arcuate recesses each housing an associated one of the junctures whereby, the serpentine rods and junctures are each disposed between the members of an associated one of the wood pairs; and,
h. at least two composite members disposed between the elongate wood members covering a portion of said serpentine rods and on opposite sides of the serpentine rods whereby to provide a composite component strengthened by metal rods while having the appearance of a wood structure.
32. The composite beam of claim 31, wherein the junctures of said serpentine rods are welded to said elongate rods.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor memory device comprising:
a nonvolatile memory including a memory cell array of multi-level cells (MLCs), each MLC being configured to store data according to a plurality of data states including;
an erase state indicated by a threshold voltage in a first threshold voltage distribution,
a first program state indicated by a threshold voltage in a second threshold voltage distribution greater than the first threshold voltage distribution,
a second program state indicated by a threshold voltage in a third threshold voltage distribution greater than the second threshold voltage distribution, and
a third program state indicated by a threshold voltage in a fourth threshold voltage distribution greater than the third threshold voltage distribution; and
a memory controller configured to perform a data rearrangement operation and an error correction code (ECC) operation for write data having an initial data arrangement and to be stored in the nonvolatile memory, wherein the data rearrangement operation rearranges the initial data arrangement to generate a new arrangement for the write data such that data in the write data having the erase state and data in the write data having the third program state are not stored in adjacent memory cells.
2. The semiconductor memory device of claim 1, wherein the ECC operation is performed according to a systematic ECC scheme that adds an error detectioncorrection parity to the write data and maintains an arrangement of message bits.
3. The semiconductor memory device of claim 1, wherein the ECC operation is performed according to a non-systematic ECC scheme that adds an error detectioncorrection parity to the write data and changes an arrangement of message bits.
4. The semiconductor memory device of claim 3, wherein the memory controller performs the ECC operation before the data rearrangement operation.
5. The semiconductor memory device of claim 1, wherein the data rearrangement operation reconfigures the initial arrangement of the write data using at least one of a run-length limited (RLL) code, a randomizing operation, and an interleaving operation.
6. The semiconductor memory device of claim 1, wherein the memory controller is further configured to perform a data read operation during which the memory controller detectscorrects an error in read data obtained from the nonvolatile memory using the ECC operation and to recover the initial arrangement for the read data according to the data rearrangement operation.
7. The semiconductor memory device of claim 1, wherein the data rearrangement operation is applied only to some of the MLCs in the memory cell array.
8. The semiconductor memory device of claim 1, wherein each MLC is configured to store two (2) data bits.
9. The semiconductor memory device of claim 1, wherein the memory controller is further configured to randomization operation on the write date.
10. The semiconductor memory device of claim 9, wherein the randomization operation is performed on the write data before the ECC operation, and the ECC operation is performed on the write data before the data rearrangement operation.
11. The semiconductor memory device of claim 9, wherein the memory controller is further configured to perform a data read operation by obtaining read data from the nonvolatile memory, detecting and correcting an error in the read data using the ECC operation, recovering the initial arrangement for the read data using the data rearrangement operation, and then de-randomizing the read data.
12. A semiconductor memory device comprising:
a nonvolatile memory having a plurality of memory cells, the memory cells are multi-level cells that store data as program states of different respective threshold voltages; and
a memory controller performing a data rearrangement operation and an error correction code (ECC) operation to reduce interference between the memory cells,
the data rearrangement operation rearranges the data to be stored in the nonvolatile memory so that data corresponding to an erase program state and data corresponding to a program state with a highest threshold voltage from among the different respective threshold voltages are not stored in adjacent memory cells.
13. The semiconductor memory device of claim 12, wherein the ECC operation is performed according to a systematic ECC scheme that adds an error detectioncorrection parity to the data and maintains an arrangement of message bits.
14. The semiconductor memory device of claim 12, wherein the ECC operation is performed according to a non-systematic ECC scheme that adds an error detectioncorrection parity to the data and changes an arrangement of message bits.
15. The semiconductor memory device of claim 12, wherein the memory controller performs the ECC operation before the data rearrangement operation.
16. The semiconductor memory device of claim 12, wherein the data rearrangement operation reconfigures an arrangement of the data by at least one of a run-length limited (RLL) code, a randomizing operation, and an interleaving operation.
17. The semiconductor memory device of claim 12, wherein in a data read operation, the memory controller detectscorrects an error in read data provided from the nonvolatile memory according to the ECC operation and recovers an arrangement of the read data according to the data rearrangement operation.
18. The semiconductor memory device of claim 12, wherein the data rearrangement operation is applied only to some of the memory cells.