1. A low cost ATSC digital television modulator compatible with ATSC television receivers, comprising:
a crystal oscillator circuit;
a Weaver modulator circuit connected to the crystal oscillator circuit; and
a digital-to-analog conversion circuit connected to the Weaver modulator, wherein
the crystal oscillator circuit comprises:
a crystal oscillator for producing a first frequency output;
a first frequency-division circuit connected to the crystal oscillator first frequency output for producing a first base frequency output at a first fraction of the frequency of the crystal oscillator; and
a second frequency-division circuit connected to the crystal oscillator first frequency output for producing a local-oscillator step frequency output at a second fraction of the frequency of the crystal oscillator;
a third frequency-division circuit connected to the local-oscillator step frequency output for producing a second base frequency output at a first fraction of the frequency of the local-oscillator step frequency output;
a first frequency multiplier circuit connected to the local-oscillator step frequency output for producing output video channel frequencies in steps according to the local-oscillator step frequency; and
a second frequency multiplier circuit connected to the local-oscillator step frequency output for producing local oscillator channel frequencies in steps according to the local-oscillator step frequency; and
a third frequency multiplier circuit connected to the second base frequency output for producing an MPEG-2 frequency output at a multiple of the frequency of the second base frequency output.
2. The apparatus of claim 1 wherein the crystal oscillator circuit further comprises:
a fourth frequency multiplier circuit connected to the first base frequency output for producing a quadrature frequency output at a first multiple of the frequency of the first base frequency output; and
a fourth frequency-division circuit connected to the quadrature frequency output for producing a Weaver modulator (fixed intermediate) frequency output at a fraction of the frequency of the quadrature frequency output.
3. The apparatus of claim 1 wherein the crystal oscillator circuit comprises:
a crystal oscillator for a first frequency output;
a divide-by-3 circuit connected to the crystal oscillator first frequency output for producing a first base frequency output at one-third of the frequency of the crystal oscillator; and
a divide-by-5 circuit connected to the crystal oscillator first frequency output for producing a local-oscillator step frequency output at one-fifth of the frequency of the crystal oscillator.
4. The apparatus of claim 3 wherein the crystal oscillator circuit further comprises:
a multiply-by-77 circuit connected to the first base frequency output for producing a quadrature frequency output at 77 times the frequency of the first base frequency output; and
a divide-by-2 circuit connected to the quadrature frequency output for producing a Weaver modulator (fixed intermediate) frequency output at one-half of the frequency of the quadrature frequency output.
5. The apparatus of claim 3 wherein the crystal oscillator circuit further comprises:
a divide-by-2 circuit connected to the local-oscillator step frequency output for producing a second base frequency output at one-half the frequency of the local-oscillator step frequency output;
a multiplier circuit connected to the local-oscillator step frequency output for producing output video channel frequencies in steps according to the local-oscillator step frequency; and
a multiply-by-9 circuit connected to the second base frequency output for producing an MPEG-2 frequency output at 9 times the frequency of the second base frequency output.
6. The apparatus of claim 1 wherein the Weaver modulator circuit comprises a finite-impulse-response (FIR) filter circuit.
7. The apparatus of claim 6 wherein the finite-impulse-response (FIR) filter circuit comprises:
a three-bit input video signal line;
a one-bit input clock signal line for shifting input video signals;
a plurality of shift registers (taps) connected in line to each other via a three-bit shift video signal line and a one-bit shift clock signal line, of which a first shift register is connected to the three-bit input video signal line and the one-bit input clock signal line;
an address decoder connected to each shift register;
a read-only memory connected to each address decoder for retrieving a coefficient value corresponding to each shift register value;
an arithmetic circuit connected to each read-only memory for multiplying each shift register value by the retrieved coefficient value to produce a filter register output value;
a balancing circuit connected to each arithmetic circuit and connected to the one-bit input clock signal line for incorporating the phase-shifted negative of the filter register output value to produce a balanced output value;
an adder circuit connected to each balancing circuit;
a signal bus connecting each adder circuit to the adder circuits connected via balancing circuits to the adjacent shift registers;
an accumulator circuit for summing the contents of all of the adder circuits.
8. The apparatus of claim 7 wherein the total number of shift registers (taps) connected sequentially to each other is no smaller in value than 31.
9. A method of producing a modulated television signal compatible with ATSC (Advanced Television Standards Committee) television receivers, comprising the steps of:
selecting an output television frequency band;
selecting a fixed IF (intermediate frequency) for amplification below the lowest frequency of the output television frequency band and above half the highest frequency of the output television frequency band;
selecting a local oscillator (LO) frequency band above the frequencies of the output television frequency band;
adopting a Weaver modulator circuit for use in filtering the input television signal;
selecting a number of finite-impulse-response (FIR) filter taps for the Weaver modulator circuit;
precomputing modified weights for the finite-impulse-response (FIR) filter taps of the Weaver modulator circuit;
storing the precomputed modified filter tap coefficients in read-only memory (ROM);
applying the modified Weaver modulator circuit to an MPEG-2 video input signal to produce a digital balanced-modulator vestigial-sideband signal;
converting the digital balanced-modulator vestigial-sideband signal to analog form.
10. The method of claim 9, wherein the step of selecting an output television frequency band further comprises the step of selecting an output television frequency band having uniformly-spaced channels.
11. The method of claim 9, wherein the step of selecting an output television frequency band having uniformly-spaced channels further comprises the step of selecting an output television frequency band comprising UHF (ultra-high-frequency) television channels 14 through 51.
12. The method of claim 9, wherein the step of selecting a fixed IF (intermediate frequency) further comprises the step of placing the IF geometrically the same ratio below the output television frequency band as the lowest local oscillator (LO) frequency is above the output television frequency band.
13. The method of claim 9, wherein the step of selecting a local oscillator (LO) frequency band further comprises the step of selecting the LO frequency as a multiple of 6 MHz.
14. The method of claim 13, wherein the step of selecting a local oscillator (LO) frequency band further comprises the step of adjusting the IF frequency in a 6 MHz increment or submultiple thereof.
15. The method of claim 13, wherein the step of selecting a fixed IF (intermediate frequency) further comprises the step of selecting an IF frequency in the range of 382-388 MHz.
16. The method of claim 15, wherein the step of selecting a fixed IF (intermediate frequency) in the range of 382-388 MHz further comprises the step of selecting an IF frequency of 385 MHz.
17. The method of claim 15, wherein the step of selecting a fixed IF (intermediate frequency) further comprises the step of adjusting the IF frequency in a 6 MHz increment or submultiple thereof.
18. The method of claim 9, wherein the step of selecting a number of finite-impulse-response (FIR) filter taps for the Weaver modulator circuit further comprises the steps of:
computing the minimum number of filter taps that can produce root-raised-cosine responses to ATSC specification;
using the minimum number of filter taps computed in the previous step as the number of filter taps for the Weaver modulator.
19. The method of claim 9, wherein the step of selecting a number of finite-impulse-response (FIR) filter taps for the Weaver modulator circuit further comprises the steps of:
computing the minimum number of filter taps that can produce root-raised-cosine responses to ATSC specification;
using the minimum number of filter taps computed in the previous step, minus 1, as the number of filter taps for the Weaver modulator.
20. The method of claim 9, wherein the step of precomputing modified weights for the finite-impulse-response (FIR) filter taps of the Weaver modulator circuit further comprises the steps of:
selecting trellis coefficient values;
selecting a carrier frequency offset value;
selecting a digital-to-analog (D-to-A) converter;
adding the carrier frequency offset value to each trellis coefficient value to produce a multiplier factor, thereby eliminating a separate pilot carrier insertion step during signal processing;
computing conventional filter tap coefficients (filter tap weights) for a Weaver modulator FIR filter;
multiplying each conventional filter tap coefficient by each multiplier factor to produce a modified filter tap coefficient for each trellis value, thereby eliminating a separate trellis coding step during signal processing;
normalizing the modified filter tap coefficients to use the full dynamic range of the D-to-A converter, producing normalized filter tap coefficients;
extending the normalized filter tap coefficient size to absorb rounding errors, producing extended filter tap coefficients;
storing each extended filter tap coefficient in read-only memory (ROM) addressable by the trellis value.
21. The method of claim 20, wherein the step of normalizing the modified filter tap coefficients to use the full dynamic range of the D-to-A converter further comprises the steps of:
determining the highest total filter tap coefficient value to be produced during FIR filter operation;
determining the maximum input signal level during FIR filter operation;
multiplying the highest total filter tap coefficient value by the maximum input signal level to produce a maximum expected input D-to-A value;
determining the maximum usable signed input value for the D-to-A converter;
computing the ratio of the maximum usable signed input value to the maximum expected input D-to-A value to produce a weight scaling factor;
multiply each modified filter tap coefficient by the weight scaling factor to produce a normalized filter tap coefficient.
22. The method of claim 20, wherein the step of extending the normalized filter tap coefficient size to absorb rounding errors, producing extended filter tap coefficients further comprises the steps of:
dividing the number of FIR filter stages by 2 and rounding the result upward to produce a filter tap coefficient size increment;
adding 1 to the filter tap coefficient size increment to provide an extended filter tap coefficient size increment for correct rounding of filter calculations;
adding the extended filter tap coefficient size increment to the input signal size to produce an extended filter tap coefficient size.
23. The method of claim 9, wherein the step of applying the modified Weaver modulator circuit to an MPEG-2 video input signal to produce a digital balanced-modulator vestigial-sideband signal further comprises the steps of:
passing an input MPEG-2 video signal through the stages of the FIR filter;
in each stage of the filter, computing a ROM address using the input MPEG-2 video signal;
in each stage of the filter, retrieving a precomputed modified filter stage tap coefficient value from the ROM using the computed ROM address;
producing the digital modulation waveform using the retrieved filter tap coefficient values;
producing a polarity-reversed copy of the digital modulation waveform using the negatives of the retrieved filter tap coefficient values, thereby producing a precise quadrature signal;
producing a balanced modulator digital output signal using the digital modulation waveform and the polarity-reversed copy of the digital modulation waveform to produce a digital balanced-modulator vestigial-sideband signal, thereby eliminating a separate balanced modulator processing step.
24. The method of claim 23, wherein the step of applying the modified Weaver modulator circuit to an MPEG-2 video input signal to produce a digital balanced-modulator vestigial-sideband signal further comprises the steps of:
passing an input MPEG-2 video signal through a Reed-Solomon encoder to produce a block-encoded MPEG-2 video signal;
passing the block-encoded MPEG-2 video signal through a randomizer circuit to produce a uniformly-distributed MPEG-2 video signal.
25. The method of claim 23, wherein the step of producing a polarity-reversed copy of the digital modulation waveform using the negatives of the retrieved filter tap coefficient values further comprises the steps of:
providing a control signal at the balanced modulator carrier frequency; and
applying said control signal to generate the ones-complement (XOR) of each filter tap coefficient value, thereby producing a polarity-reversed copy of the digital modulation waveform as a quadrature output;
delaying the output of the polarity-reversed copy of the digital modulation waveform by ninety degrees of phase of the input carrier frequency, thereby providing the polarity-reversed copy of the digital modulation waveform as a precise quadrature signal, and also thereby avoiding duplication of the FIR filter.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor light emitting device comprising:
a light emitting element including a semiconductor layer, the semiconductor layer having a first face, a side surface continued from the first face, and an active layer configured to emit a light, a p-side electrode provided on the semiconductor layer, and an n-side electrode provided on the semiconductor layer;
a p-side interconnection portion being electrically connected to the p-side electrode;
an n-side interconnection portion being electrically connected to the n-side electrode;
an insulating material disposed on the side surface of the semiconductor layer, a periphery of the p-side interconnection portion, and a periphery of the n-side interconnection portion, the insulating material blocking light emitted by the light emitting element;
a phosphor layer disposed on the insulating material and the first face of the semiconductor layer, the phosphor layer comprising a transparent medium, phosphor dispersed in the transparent medium, and particles dispersed in the transparent medium, the phosphor, when excited by the light, emitting a fluorescence, the particles being of a magnitude of not more than 110 of a wavelength of the light and having a refractive index that is different from a refractive index of the transparent medium; and
a fluorescent reflection film provided between the light emitting element and the phosphor layer, the fluorescent reflection film having a reflectance with respect to a wavelength of the fluorescence emitted by the phosphor that is greater than a reflectance with respect to the wavelength of the light, the fluorescent reflection film being in contact with a substantial portion of the first face of the semiconductor layer and a surface of the insulating material disposed on the side surface of the semiconductor layer.
2. The device according to claim 1, wherein an average grain diameter of the particles is not less than 15 nm and not more than 45 nm.
3. The device according to claim 1, wherein
the semiconductor layer includes a second face opposite to the first face,
the p-side electrode is provided on the second face in a region including the active layer, and
the n-side electrode is provided on the second face in a region not including the active layer.
4. The device according to claim 3,
wherein the insulating material includes a first insulating material provided on a side of the second face, and having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode,
the p-side interconnection portion is provided on the first insulating material, and electrically connected to the p-side electrode through the first opening, and
the n-side interconnection portion is provided on the first insulating material, and electrically connected to the n-side electrode through the second opening.
5. The device according to claim 4, wherein the first insulating material is disposed on the side surface continued from the first face of the semiconductor layer.
6. The device according to claim 4, wherein the insulating material includes a second insulating material provided between the p-side interconnection portion and the n-side interconnection portion.
7. The device according to claim 6, wherein the second insulating material is disposed on the periphery of the p-side interconnection portion and the periphery of the n-side interconnection portion.
8. The device according to claim 4, wherein the p-side interconnection portion includes:
a p-side interconnection layer provided inside the first opening and on the first insulating material; and
a p-side metal pillar provided on the p-side interconnection layer and being thicker than the p-side interconnection layer, and
the n-side interconnection portion includes:
an n-side interconnection layer provided inside the second opening and on the first insulating material; and
an n-side metal pillar provided on the n-side interconnection layer and being thicker than the n-side interconnection layer.
9. The device according to claim 1, wherein the transparent medium is a resin layer.
10. The device according to claim 1, wherein the fluorescent reflection film is a silicon nitride film.
11. The device according to claim 1, further comprising a top coat film provided on the phosphor layer.
12. The device according to claim 11, wherein the top coat film is a silicon nitride film.
13. The device according to claim 11, wherein the top coat film is a silicon oxide film.
14. The device according to claim 11, wherein the top coat film is a LiF film.
15. The device according to claim 11, wherein the top coat film has a refractive index between a refractive index of the transparent medium of the phosphor layer and a refractive index of an air.
16. The device according to claim 11, wherein
the transparent medium of the phosphor layer is a resin layer, and
the top coat film has a lower adhesion than a adhesion of the resin layer.
17. The device according to claim 11, wherein a grain diameter of the particles is \u03bb10 n in the case in which the wavelength of the light of the light emitting element is set to \u03bb and a refractive index of the transparent medium of the phosphor layer is set to n.
18. A semiconductor light emitting device, comprising:
a light emitting element including a semiconductor layer, the semiconductor layer having a first face, a side surface continued from the first face, and an active layer configured to emit a first light;
an insulating material covering the side surface of the semiconductor layer;
a phosphor layer disposed on the light emitting element, the phosphor layer comprising a transparent medium, phosphor dispersed in the transparent medium, and particles dispersed in the transparent medium, the phosphor, when excited by the first light, emitting a fluorescence, the particles being of a magnitude of not more than 110 of a wavelength of the first light and having a refractive index that is different from a refractive index of the transparent medium; and
a fluorescent reflection film provided as a continuous layer between the light emitting element and the phosphor layer, the fluorescent reflection film having a reflectance with respect to a wavelength of the fluorescence emitted by the phosphor that is greater than a reflectance with respect to the wavelength of the first light.
19. The device according to claim 18, wherein the fluorescent reflection film is a planar film directly contacting the first face of the semiconductor layer.
20. The device according to claim 18, wherein the fluorescent reflection film is directly contacting a surface of the insulating material covering the side surface of the semiconductor layer.