What is claimed is:
1. A gasket comprises:
an elongated strip of flexible material wherein said flexible material comprises silicon, hydrated alumina, a flame retardant paste, di benzoyl peroxide, a minusil filler, and a cross linking peroxide.
2. A gasket comprises:
a block of flexible material having a trough for receiving a cable, wherein said flexible material comprises silicon, hydrated alumina, a flame retardant paste, di benzoyl peroxide, a minusil filler, and a cross linking peroxide.
3. A method for forming a gasket, comprising the steps of:
placing a silicone compound on a mill to allow said silicone compound to break down and warm up.
adding slowly a flame retardant paste, hydrated alumina, minusil filler, di benzoyl and cross linking peroxide to said silicone compound to form a combined mixture;
rolling and mixing said combined mixture until it is blended homogeneously throughout; and
verify the combined mixture is mixed properly by using an oscillating disc rheometer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An organic molecular memory, comprising:
a first conducive layer;
a second conductive layer; and
an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer having an organic molecule, the organic molecule having a linker group bonded to the first conductive layer, a \u03c0 conjugated chain bonded to the linker group, and a phenyl group bonded to the \u03c0 conjugated chain opposite to the linker group and facing the second conductive layer, the \u03c0 conjugated chain having single bonds and double bonds or triple bonds bonded alternately, a carbon number of the \u03c0 conjugated chain being larger than twelve and not larger than forty six, the \u03c0 conjugated chain including electron-accepting groups or electron-donating groups arranged in line asymmetry with respect to a bonding direction of the \u03c0 conjugated chain, the phenyl group having substituents R0, R1, R2, R3, and R4 as shown in the following formula, the substituent R0 being an electron-accepting group or an electron-donating group
2. The organic molecular memory according to claim 1, wherein the substituents R1, R2, R3, and R4 are arranged in line symmetry with respect to the bonding direction.
3. The organic molecular memory according to claim 1, wherein when the substituent R0 is the electron-accepting group, the substituents R1, R2, R3, and R4 are hydrogen or electron-donating groups, and when the substituent R0 is the electron-donating group, the substituents R1, R2, R3, and R4 are hydrogen or electron-accepting groups.
4. The organic molecular memory according to claim 1, wherein the substituent R0 is a nitro group, halogen, a cyano group, a carbonyl group, a sulfonyl group, or a trialkylamino group.
5. The organic molecular memory according to claim 1, wherein the substituent R0 is an alkoxy group, a hydroxyl group, an amino group, an alkylamino group, a dialkylamino group, or an amide group.
6. The organic molecular memory according to claim 1, wherein the substituents R1, R2, R3, and R4 are all hydrogen.
7. The organic molecular memory according to claim 1, wherein at least any one of the substituents R1, R2, R3, and R4 is a nitro group, halogen, a cyano group, a carbonyl group, a sulfonyl group, or a trialkylamino group.
8. The organic molecular memory according to claim 1, wherein at least any one of the substituents R1, R2, R3, and R4 is an alkoxy group, a hydroxyl group, an amino group, an alkylamino group, a dialkylamino group, or an amide group.
9. The organic molecular memory according to claim 1, wherein the \u03c0 conjugated chain includes a phenylene ring, a thiophene ring, a pyrrole ring, a furan ring, a vinylene group, or an ethynylene group.
10. The organic molecular memory according to claim 1, wherein the first conductive layer and the second conductive layer are formed of different materials.
11. The organic molecular memory according to claim 1, wherein one of the first conductive layer and the second conductive layer includes Au, Ag, Cu, Pt, Pd, Fe, W, or WN2, and the other includes Ta, TaN, Mo, MoN, or TiN.
12. The organic molecular memory according to claim 1, wherein when the substituent R0 is the electron-accepting group, a work function of the second conductive layer is larger than a work function of the first conducive layer.
13. The organic molecular memory according to claim 1, wherein when the substituent R0 is the electron-donating group, a work function of the first conductive layer is larger than a work function of the second conducive layer.
14. The organic molecular memory according to claim 1, wherein the linker group is a thiol group, a silanol group, an alcohol group, a phosphonic acid group, a carboxyl group, or an azo group.
15. The organic molecular memory according to claim 1, wherein the organic molecule has a dipole moment of 1.3 Debye or more to 15 Debye or less in the bonding direction.
16. An organic molecular memory, comprising:
a first conducive layer;
a second conductive layer; and
an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer having an organic molecule, the organic molecule having a linker group bonded to the first conductive layer, a \u03c0 conjugated chain bonded to the linker group, and a phenyl group bonded to the \u03c0 conjugated chain opposite to the linker group, the \u03c0 conjugated chain having single bonds and double bonds or triple bonds bonded alternately, a carbon number of the \u03c0 conjugated chain being larger than twelve and not larger than forty six, the \u03c0 conjugated chain including electron-accepting groups or electron-donating groups arranged in line asymmetry with respect to a bonding direction of the \u03c0 conjugated chain, the phenyl group having substituents R0, R1, R2, R3, and R4 as shown in the following formula, the substituent R0 being an aromatic ring, the aromatic ring facing the second conductive layer, at least one of the substituents R1, R2, R3, and R4 being an electron-accepting group or an electron-donating group
17. The organic molecular memory according to claim 16, wherein the substituents R1, R2, R3, and R4 are arranged in line symmetry with respect to the bonding direction.
18. The organic molecular memory according to claim 16, wherein the aromatic ring is a phenyl ring, a thiophene ring, a pyrrole ring, or a furan ring.
19. The organic molecular memory according to claim 16, wherein at least one of the substituents R1, R2, R3, and R4 is a nitro group, halogen, a cyano group, a carbonyl group, a sulfonyl group, or a trialkylamino group.
20. The organic molecular memory according to claim 16, wherein at least one of the substituents R1, R2, R3, and R4 is an alkoxy group, a hydroxyl group, an amino group, an alkylamino group, a dialkylamino group, or an amide group.