1. A baseball glove having
a thumb pocket disposed inside the glove main body,
a soft member disposed in the thumb pocket, the soft member being constructed separately from the thumb pocket; the soft member being constructed in a substantially tubular shape so as to cover a thumb; and
a thumb catching member disposed in the interior of said thumb pocket,
wherein the soft member is formed from a multilayered material comprising a cushioning material sandwiched between two sheet members; the multilayered material is formed into a substantially tubular shape by overlapping both ends of the multilayered material and connecting these ends by stitching or by using an adhesive agent;
a thumb is inserted into the soft member so that the thumb does not come into direct contact with the thumb pocket; and
the soft member and the thumb catching member are disposed within the thumb pocket so that the internal space of the thumb pocket in relation to the dimension of the soft member in the longitudinal direction is set equal to or longer than the length dimension of the thumb catching member.
2. The baseball glove according to claim 1, wherein said soft member is a member in which a cushioning material consisting of a sponge or felt is sandwiched and integrated between two sheet materials consisting of leather or cloth.
3. The baseball glove according to claim 1 or claim 2, wherein the thumb insertion beginning end portion of said substantially tubular soft member that contacts the underside of the thumb is folded back to the outside in a state in which the thumb is inserted into this soft member.
4. The baseball glove according to claim 1 or claim 2, wherein said thumb pocket is formed into a pocket shape by stitching, or by joining by means of an adhesive agent, at least two sheet members, and said thumb catching member is fastened to a cord for fastening said thumb pocket to said glove, main body by causing the cord to pass through said glove main body after passing from one of said sheet members through the other sheet member.
5. The baseball glove according to claim 1, wherein the soft member is formed from a single layer having cushioning properties.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for improving electrical signal isolation between adjacent devices situated in a top semiconductor layer, said method comprising:
etching a trench through said top semiconductor layer and partially into a base oxide layer below said top semiconductor layer;
depositing a polysilicon filler into said trench;
removing said polysilicon filler and etching through said base oxide layer to an underlying handle wafer;
etching a portion of said handle wafer beneath said trench so as to create a void in said handle wafer to improve electrical signal isolation between said adjacent devices situated in said top semiconductor layer.
2. The method of claim 1, wherein said void has a void width greater than a trench width of said trench.
3. The method of claim 1, wherein said void extends beneath a portion of one or more of said adjacent devices on said top semiconductor layer.
4. The method of claim 1, wherein said etching a portion of said handle wafer preserves unetched portions of said handle wafer to provide mechanical support to said top semiconductor layer.
5. The method of claim 1, wherein said etching a portion of said handle wafer is performed isotropically.
6. The method of claim 1, further comprising growing a liner oxide on a portion of a sidewall of said trench before said depositing said polysilicon filler into said trench.
7. The method of claim 1, further comprising growing an oxide layer over said polysilicon filler after said depositing said polysilicon filler into said trench.
8. The method of claim 1, further comprising depositing an oxide over a top opening of said trench to pinch off a cavity formed by said trench and said void.
9. A method comprising:
etching a trench through a top semiconductor layer;
depositing a polysilicon filler into said trench;
removing said polysilicon filler and etching though a base oxide layer below said top semiconductor layer;
etching a portion of a handle wafer beneath said trench so as to create a void in said handle wafer.
10. The method of claim 9, wherein said void has a void width greater than a trench width of said trench.
11. The method of claim 9, wherein said void extends beneath a portion of one or more devices on said top semiconductor layer.
12. The method of claim 9, wherein said etching a portion of said handle wafer preserves unetched portions of said handle wafer to provide mechanical support to said top semiconductor layer.
13. The method of claim 9, wherein said etching said portion of said handle wafer is performed isotropically.
14. The method of claim 9, further comprising growing a liner oxide on a portion of a sidewall of said trench before said depositing said polysilicon filler into said trench.
15. The method of claim 9, further comprising depositing an oxide over a top opening of said trench to pinch off a cavity formed by said trench and said void.
16. A method comprising:
etching a trench through a top semiconductor layer;
depositing a polysilicon filler into said trench;
removing said polysilicon filler and etching below said top semiconductor layer;
etching beneath said trench so as to create a void that extends beneath a portion of one or more devices on said top semiconductor layer.
17. The method of claim 16, wherein said void has a void width greater than a trench width of said trench.
18. The method of claim 16, wherein said etching beneath said trench is performed isotropically.
19. The method of claim 16, further comprising growing a liner oxide on a portion of a sidewall of said trench before said depositing said polysilicon filler into said trench.
20. The method of claim 16, further comprising depositing an oxide over a top opening of said trench to pinch off a cavity formed by said trench and said void.