1. A semiconductor process for manufacturing particular patterns, comprising the steps of:
sequentially forming a target layer and a plurality of evenly-spaced core bodies having uniform width on a substrate;
conformally forming a spacer material layer on said target layer and said core bodies so that a plurality of recesses are formed between two adjacent said core bodies in said spacer material layer;
forming a first photoresist on said spacer material layer, wherein said first photoresist covers a predetermined region encompassing at least two said core bodies and at least one said recess;
performing a first etch process using said first photoresist as an etch mask to remove said spacer material layer outside the said predetermined region so that said core bodies outside said predetermined region are exposed;
removing said exposed core bodies to expose underlying said target layer;
forming a second photoresist on said spacer material layer in said predetermined region, wherein said second photoresist at least encompasses all of said recesses in said predetermined region; and
performing a second etch process using remaining said spacer material layer and said second photoresist as an etch mask to pattern said target layer.
2. A semiconductor process for manufacturing particular patterns according to claim 1, further comprising forming a flat layer on said spacer material layer before forming said first photoresist.
3. A semiconductor process for manufacturing particular patterns according to claim 2, wherein said first etch process is an anisotropic etch process which removes a portion of said flat layer outside said predetermined region.
4. A semiconductor process for manufacturing particular patterns according to claim 3, wherein the step of removing said exposed core bodies comprises removing said first photoresist and remaining said flat layer.
5. A semiconductor process for manufacturing particular patterns according to claim 2, wherein said flat layer is an anti- reflective layer.
6. A semiconductor process for manufacturing particular patterns according to claim 1, wherein the spacing between said core bodies is triple the width of said core bodies.
7. A semiconductor process for manufacturing particular patterns according to claim 1, wherein said spacer material layer has uniform thickness corresponding to the width of word lines or the width of bit lines to be formed.
8. A semiconductor process for manufacturing particular patterns according to claim 1, wherein said predetermined region corresponds to the select gate to be formed.
9. A semiconductor process for manufacturing particular patterns according to claim 1, wherein said particular pattern is a plurality of word lines, a plurality of bit lines or a select gate.
10. A semiconductor process for manufacturing particular patterns according to claim 1, wherein said second etch process is an anisotropic etch process which removes said spacer material layer under said recesses out of said predetermined region so that said spacer material layer out of said predetermined region changes into a plurality of evenly-spaced spacers with uniform width.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of improving recognition of a particular person in images by constructing a composite model of at least the portion of the head of that particular person, comprising
(a) acquiring a collection of images taken during a particular event;
(b) identifying image(s) having a particular person in the collection;
(c) identifying one or more features in the identified image(s) associated with that particular person;
(d) searching the collection using the identified features to identify the particular person in other images of the collection; and
(e) constructing a composite model of at least a portion of the particular person’s head using identified images of the particular person.
2. The method of claim 1 wherein the features include apparel.
3. The method of claim 1 wherein the composite model includes:
(i) stored portions of the head of the particular person for later searching;
(ii) determining the pose of the head in each of the identified images having the particular person; or
(iii) creating a three dimensional model of the head of the particular person;
4. The method of claim 3 further including storing the identified features for use in searching subsequent collections.
5. The method of claim 3 further comprising using the composite model (i) or (iii) to search other image collections to identify the particular person.
6. The method of claim 5 further including using the stored identified features to search other image collections to identify the particular person.
7. The method of claim 3 further comprising using the composite model (ii) and extracting head features and using such extracted head features to search other image collections to identify the particular person.
8. The method of claim 7 further including using the stored identified features to search other image collections to identify the particular person.