1. A quantum dot light emitting element, comprising:
a substrate;
an anode formed on the substrate;
a quantum light emitting layer formed on the anode, the quantum light emitting layer comprising charge transporting particles and quantum dots mixed therein; and
a cathode formed on the quantum light emitting layer,
wherein the charge transporting particles comprise oxide nanoparticles,
wherein the oxide nanoparticles comprise p-type semiconductor nanoparticles and n-type semiconductor nanoparticles,
wherein the p-type and n-type oxide nanoparticles are larger than the quantum dots,
wherein the p-type semiconductor nanoparticles comprise one of nickel oxide (NiOx), vanadium oxide (VOx), chrome oxide (CrOx), and barium oxide (BOx), and
wherein the n-type semiconductor nanoparticles comprise one of indium oxide (InOx), aluminum oxide (AL2O3), zirconium oxide ZrOx, tin oxide (SnOx), and tungsten oxide (WOx).
2. The quantum dot light emitting element of claim 1, wherein the quantum dots have a diameter of 2 nm\u02dc20 nm.
3. The quantum dot light emitting element of claim 1, wherein the quantum dots are formed of 2-6 or 3-5 group semiconductor compounds.
4. The quantum dot light emitting element of claim 1, wherein the oxide nanoparticles have a diameter of 2 nm\u02dc100 nm.
5. A method for manufacturing a quantum dot light emitting element, the method comprising:
forming an anode on a substrate;
forming a quantum light emitting layer comprising charge transporting particles and quantum dots mixed therein on the anode; and
forming a cathode on the quantum light emitting layer,
wherein the charge transporting particles comprise oxide nanoparticles,
wherein the oxide nanoparticles comprise p-type semiconductor nanoparticles and n-type semiconductor nanoparticles,
wherein the p-type and n-type oxide nanoparticles are larger than the quantum dots,
wherein the p-type semiconductor nanoparticles comprise one of nickel oxide (NiOx), vanadium oxide (VOx), chrome oxide (CrOx), and barium oxide (BOx), and
wherein the n-type semiconductor nanoparticles comprise one of indium oxide (InOx), aluminum oxide (AL2O3), zirconium oxide ZrOx, tin oxide (SnOx), and tungsten oxide (WOx).
6. The method for manufacturing the quantum dot light emitting element of claim 5, wherein forming the quantum light emitting layer is performed in a solution process which uses liquid comprising the quantum dots dispersed in a solvent in coating.
7. The method for manufacturing the quantum dot light emitting element of claim 6, wherein the solution process is performed according to one of inkjet, spin coating, nozzle coating, spray coating, and slit coating.
8. The method for manufacturing the quantum dot light emitting element of claim 6, wherein the solvent is H2O or an organic solvent.
9. A method for manufacturing a quantum dot light emitting element, the method comprising:
forming a first electrode on a substrate;
forming a quantum light emitting layer comprising charge transporting particles and quantum dots mixed therein on the first electrode, the charge transporting particles comprising first oxide nanoparticles, the first oxide nanoparticles comprise one of p-type semiconductor nanoparticles or n-type semiconductor nanoparticles, the forming a quantum light emitting layer comprising:
providing the mixed charge transporting particles and quantum dots dispersed in a first solvent a solution process; and
volatizing the first solvent;
forming a layer of second oxide nanoparticles over the quantum light emitting layer, the second oxide nanoparticles comprising p-type semiconductor nanoparticles or n-type semiconductor nanoparticles other than that of the first oxide nanoparticles, the forming a layer of second oxide nanoparticles comprising:
providing the second oxide nanoparticles dispersed in a second solvent different from the first solvent; and
volatizing the second solvent; and
forming a second electrode on the quantum light emitting layer,
wherein the p-type and n-type oxide nanoparticles are larger than the quantum dots,
wherein the p-type semiconductor nanoparticles comprise one of nickel oxide (NiOx), vanadium oxide (VOx), chrome oxide (CrOx), and barium oxide (BOx), and
wherein the n-type semiconductor nanoparticles comprise one of indium oxide (InOx), aluminum oxide (AL2O3), zirconium oxide ZrOx, tin oxide (SnOx), and tungsten oxide (WOx).
10. The method of claim 9, wherein each of the first and second solvents comprises one of: H2O and an organic solvent.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for monitoring an internal combustion engine having an injection system, in particular for preventing dieseling in the case of a diesel engine, comprising the following steps of:
Establishing a theoretical calorific balance of the internal combustion engine, and
Determining a diagnostic signal reflecting the disequilibrium of the theoretically determined calorific balance, said diagnostic signal indicating a malfunction in the injection system andor the internal combustion engine.
2. The method according to claim 1, comprising the following steps of:
Input-side determination of a calorific state variable of the internal combustion engine;
Output-side determination of a calorific state variable of the internal combustion engine; and
Taking into account of the two state variables in the calorific balance of the internal combustion engine to produce the diagnostic signal.
3. The method according to claim 2, wherein the state variable determined on the input side is the enthalpy supplied to the internal combustion engine by fuel andor fresh air.
4. The method according to claim 1, wherein the state variable determined on the output side is the enthalpy removed from the internal combustion engine by the exhaust gas flow.
5. The method according to claim 1, wherein the mechanical work performed by the internal combustion engine is determined and taken into account in the calorific balance of the internal combustion engine to produce the diagnostic signal.
6. The method according to claim 1, wherein the thermal losses of the internal combustion engine are determined and taken into account in the calorific balance of the internal combustion engine to produce the diagnostic signal.
7. The method according to claim 1, comprising the following steps of:
Determining the exhaust gas temperature;
Determining the mass air flow; and
Determining the enthalpy removed from the internal combustion engine from the exhaust gas temperature and the mass air flow.
8. The method according to claim 1, comprising the following steps of:
Determining the exhaust gas temperature;
Determining the RPM of the internal combustion engine; and
Determining the enthalpy removed from the internal combustion engine from the exhaust gas temperature, the RPM of the internal combustion engine and the predefined cubic capacity of the internal combustion engine.
9. The method according to claim 1, comprising the following steps of:
Determining the injection quantity; and
Determining the enthalpy supplied to the internal combustion engine from the injection quantity.
10. The method according to claim 1, comprising the following steps of:
Feeding back part of the exhaust gas flow of the internal combustion engine to the air intake of the internal combustion engine in accordance with a defined exhaust gas recirculation rate; and
Determining the enthalpy supplied to the internal combustion engine as a function of the exhaust gas recirculation rate.
11. The method according to claim 1, comprising the following steps of:
Comparing the diagnostic signal with a first limit value; and
Emergency shutdown of the internal combustion engine andor injection system if the first limit value is exceeded.
12. The method according to claim 1, comprising the following steps of:
Comparing the diagnostic signal with a second limit value; and
Activating a visual or audible warning signal if the second limit value is exceeded.