1. A method for fabricating a device for sensor magnetic fields, the method comprising:
providing a substrate member having a surface region;
removing at least one portion of the substrate member;
forming an integrated circuit (IC) layer overlying the substrate member;
forming a first magnetic field sensor element comprising at least a first material and configured to detect at least an x-axis direction, the first magnetic field sensor element being operably coupled to the IC layer;
forming a second magnetic field sensor element comprising at least the first material and configured to detect at least a y-axis direction, the second magnetic field sensor element being operably coupled to the IC layer;
forming a third magnetic field sensor element comprising at least the first material and configured to detect at least a z-axis direction, the third magnetic field sensor element being operably coupled to the IC layer;
forming at least one magnetic field concentrator spatially disposed overlying at least one portion of the substrate member, the magnetic field concentrator being formed within a vicinity of the third magnetic field sensor element; and
forming at least one passivation material overlying the first, second, and third magnetic field sensor elements and the surface region;
wherein all of the x-axis, y-axis, and z-axis directions are configured in a mutually orthogonal manner.
2. The method of claim 1 wherein the substrate member comprises a silicon material, a dielectric material, or a polymer.
3. The method of claim 1 wherein the substrate member has at least one portion patterned through a wet etching, dry etching, deep reactive-ion etching (DRIE), or mechanical process.
4. The method of claim 1 wherein the IC layer comprises a silicon material, a dielectric material, or a metal material.
5. The method of claim 1 wherein the IC layer comprises at least one IC device.
6. The method of claim 1 wherein the first, second, and third magnetic field sensor elements comprise ordinary magneto-resistive (OMR) devices, anisotropic magneto-resistive (AMR) devices, giant magneto-resistive (GMR) devices, or tunnel junction magneto-resistive (TMR) devices.
7. The method of claim 1 wherein the first, second, and third magnetic field sensor elements comprise thin film device(s), the thin film device(s) being deposited overlying at least one portion of the surface region.
8. The method of claim 7 wherein the thin film device(s) are deposited by a sputtering process.
9. The method of claim 1 wherein the first, second, and third magnetic field sensor elements are formed as a Wheatstone bridges, half bridges, or single elements.
10. The method of claim 1 wherein the first magnetic field sensor element is configured to be 45 degrees away from a crystal easy axis direction.
11. The method of claim 1 wherein the first magnetic field sensor element is configured to detect magnetic fields in the x-axis direction.
12. The method of claim 1 wherein the second magnetic field sensor element is configured to be \u221245 degrees away from a crystal easy axis direction.
13. The method of claim 1 wherein the second magnetic field sensor element is configured to detect magnetic fields in the y-axis direction.
14. The method of claim 1 wherein the first and second magnetic field sensor elements are configured to be symmetrical across a crystal hard axis.
15. The method of claim 1 wherein the third magnetic field sensor is configured to a direction on a crystal hard axis or a crystal easy axis.
16. The method of claim 1 wherein the third magnetic field sensor element is aligned to the first or second magnetic sensor element.
17. The method of claim 1 wherein the third magnetic field sensor element is configured to detect magnetic fields in the z-axis direction, the third magnetic field sensor element being able to detect vertical magnetic fields via the field concentrator(s).
18. The method of claim 1 further comprising a conductive strap disposed within a vicinity of the first, second, and third magnetic field sensor elements.
19. The method of claim 18 wherein the conductive strap comprises a metal or metal alloy.
20. The method of claim 1 wherein the field concentrator(s) comprise a nickel iron (NiFe) material or a nickel iron cobalt (NiFeCo) material.
21. The method of claim 1 wherein the field concentrator(s) comprise permalloy materials, the permalloy materials having high permeability.
22. The method of claim 1 wherein the field concentrator(s) are formed via an electricplating process or a sputtering process.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. Calibration device for a plastic extrusion system comprising:
a. a housing (5) to receive the coolant (2), through which a plastic profile (1) may be transported and thereby cooled by the coolant,
b. calibration guides (6) through which the plastic profile (1) passes,
c. inlet and drainage openings (10, 23) with connected lines for the coolant,
d. wherein the coolant level (20) lies above the apex of the plastic profile (1) to be calibrated and is so adjusted that a liquid-free, air-filled volume (21) remains above the coolant level,
e. an air extraction aperture (8) above the coolant level (20) through which air may be extracted and a partial vacuum of
PuPaP
may be created in the liquid-free, air-filled volume above the coolant level with respect to ambient air pressure, whereby Pu is the partial vacuum prevailing in the calibration device, Pa is the ambient air pressure prevailing outside the calibration device, and P is the difference between the two pressure values, each of which is measured in height units of a coolant column, characterized in that
f. the drain opening for the coolant is positioned in a wall (27) of the housing (5) at the coolant level so that the coolant may drain without an additional pump,
g. and that a drain line (11) connected to the drain opening extends essentially vertically and ends below a level corresponding to P into a coolant supply tank (12) exposed to the ambient atmosphere, whereby a compact fluid column with a height h corresponding to P is formed.
2. Calibration device as in claim 1, characterized in that the drain line ends in an S-shaped bent siphon that includes a ventilation opening (15) in its upper curve.
3. Calibration device as in claim 1, characterized in that the drain line ends in an open basin (20) or an open channel, whereby the opening of the drain line is positioned below the coolant level (31) of the basin or the channel.
4. Calibration device as in one of the previous claims, characterized in that the drain line is provided with an observation glass (29) for the entire extent of the fluid column.
5. Calibration device as in one of the previous claims, characterized in that the coolant supply tank exposed to the ambient atmosphere is transported via a closed circuit through a heat exchanger (cooler 22) and a pump section that ends below the coolant level at the coolant inlet within the calibration device housing.
6. Calibration device as in one of the previous claims, characterized in that several drain openings (10, 10, 10) positioned one above the other and that may be closed are installed for the coolant in the housing wall.
7. Calibration device as in one of the previous claims, characterized in that at least one of the drain openings for the coolant is provided with an overflow spillway adjustable in height.
8. Calibration device as in claim 7, characterized in that at least one of the drain openings is provided with a gate (34) adjustable in height.
9. Calibration device as in one of the previous claims, characterized in that the vertical length of the drain line is positioned with a P pressure differential of 10 to 80 mbar, corresponding to a coolant column of from 10 to 80 cm, i.e., is at least 80 cm long.