1. A compound of formula (I)
wherein:
R1 is H;
R2 is H;
R3, R4, R5, R6 and R7 are independently selected from the group consisting of H, halo, alkylsulfonyl, N-hydroxylsulfonamidyl, perhaloalkyl, nitro, aryl, cyano, alkoxy, perhaloalkoxy, alkyl, substituted aryloxy, alkylsulfanyl, alkylsulfinyl, heterocycloalkyl, substituted heterocycloalkyl, dialkylamino, cycloalkoxy, cycloalkylsulfanyl, arylsulfanyl, arylsulfinyl, carboxyl, carboxyl ester, acylamino and sulfonylamino, provided that at least one of R3, R4, R5, R6 and R7 is carboxyl, carboxyl ester, acylamino or sulfonylamino; and provided that when one of R3, R4, R5, R6 and R7 is carboxyl, \u2014C(O)O-alkyl or SO2NH2, then at least one of the remaining R3, R4, R5, R6 and R7 is a moiety other than H or halo;
or a pharmaceutically acceptable salt thereof.
2. The compound of claim 1, wherein R2 is H.
3. The compound of claim 1, wherein at least one of R3 and R7 is other than H.
4. The compound of claim 1, wherein at least one of R3 and R7 is an electron withdrawing group.
5. The compound of claim 1, wherein at least one of R3, R4, R5, R6 and R7 is carboxyl, \u2014COO-alkyl, \u2014C(O)NH2, \u2014C(O)NRaRb where Ra is hydrogen and Rb is alkyl, \u2014C(O)NRaRb where Ra and Rb are independently alkyl, \u2014C(O)NRaRb where Ra and Rb are taken together with the nitrogen to which they are attached to form a heterocyclic or substituted heterocyclic ring, \u2014SO2NH2, \u2014SO2NR-alkyl where R is hydrogen, \u2014SO2NR-alkyl where R is alkyl, or \u2014SO2NR2 where the two R groups are taken together with the nitrogen to which they are attached to form a heterocyclic or substituted heterocyclic ring.
6. A pharmaceutical composition comprising a compound of claim 1 and a pharmaceutically acceptable carrier.
7. A kit comprising a compound of claim 1 and instructions for use in the treatment of a disease or condition that is responsive to nitroxyl therapy.
8. The compound of claim 1, wherein at least one of R3, R4, R5, R6 and R7 is carboxyl ester, acylamino or sulfonylamino.
9. The compound of claim 1, wherein at least one of R3, R4, R5, R6 and R7 is \u2014COO-alkyl.
10. The compound of claim 1, wherein at least one of R3, R4, R5, R6 and R7 is \u2014S(O)2alkyl.
11. The compound of claim 1, wherein at least one of R3, R4, R5, R6 and R7 is \u2014C(O)NRaRb where Ra is hydrogen and Rb is alkyl, \u2014C(O)NRaRb where Ra and Rb are independently alkyl, \u2014C(O)NRaRb where Ra and Rb are taken together with the nitrogen to which they are attached to form a heterocyclic or substituted heterocyclic ring, \u2014SO2NH2, \u2014SO2NR-alkyl where R is hydrogen, \u2014SO2NR-alkyl where R is alkyl, or \u2014SO2NR2 where the two R groups are taken together with the nitrogen to which they are attached to form a heterocyclic or substituted heterocyclic ring.
12. The compound of claim 1, wherein at least one of R3, R4, R5, R6 and R7 is \u2014C(O)NRaRb where Ra and Rb are independently alkyl.
13. The compound of claim 1, wherein at least one of R3, R4, R5, R6 and R7 is carboxyl.
14. The compound of claim 1, wherein the compound is selected from compounds 1 to 72 in Table 1.
15. The pharmaceutical composition of claim 6, wherein at least one of R3, R4, R5, R6 and R7 in the compound of formula I is carboxyl ester, acylamino or sulfonylamino.
16. The pharmaceutical composition of claim 6, wherein at least one of R3, R4, R5, R6 and R7 in the compound of formula I is \u2014COO-alkyl.
17. The pharmaceutical composition of claim 6, wherein at least one of R3, R4, R5, R6 and R7 in the compound of formula I is \u2014S(O)2alkyl.
18. The pharmaceutical composition of claim 6, wherein at least one of R3, R4, R5, R6 and R7 in the compound of formula I is \u2014C(O)NRaRb where Ra is hydrogen and Rb is alkyl, \u2014C(O)NRaRb where Ra and Rb are independently alkyl, \u2014C(O)NRaRb where Ra and Rb are taken together with the nitrogen to which they are attached to form a heterocyclic or substituted heterocyclic ring, \u2014SO2NH2, \u2014SO2NR-alkyl where R is hydrogen, \u2014SO2NR-alkyl where R is alkyl, or \u2014SO2NR2 where the two R groups are taken together with the nitrogen to which they are attached to form a heterocyclic or substituted heterocyclic ring.
19. The pharmaceutical composition of claim 6, wherein at least one of R3, R4, R5, R6 and R7 in the compound of formula I is \u2014C(O)NRaRb where Ra and Rb are independently alkyl.
20. The pharmaceutical composition of claim 6, wherein at least one of R3, R4, R5, R6 and R7 in the compound of formula I is carboxyl.
21. The pharmaceutical composition of claim 6, wherein the compound of formula I is selected from compounds 1 to 72 in Table 1.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for fabricating a gate with dual gate dielectric layer, comprising:
providing a semiconductor substrate, with a dielectric layer, a hard mask layer, and a patterned photoresist layer with a first opening sequentially formed thereon, wherein the first opening exposes the hard mask layer;
etching the hard mask layer to form a second opening using the patterned photoresist layer as a mask;
removing the patterned photoresist layer;
conformally forming an insulating layer over the hard mask layer and the second opening;
anisotropically etching the insulating layer to form a spacer on a sidewall of the second opening;
implanting nitrogen ions into the semiconductor substrate using the hard mask layer and the spacer as masks;
removing the spacer and the exposed dielectric layer; and
thermally oxidizing the semiconductor substrate to form a gate oxide layer over a bottom of the second opening using the hard mask layer as a mask.
2. The method for fabricating a gate with dual gate dielectric layer as claimed in claim 1, further comprising:
forming a conducting layer over the hard mask layer, the second opening filled with the conducting layer;
planarizing the conducting layer to expose the hard mask layer; and
removing the hard mask layer.
3. The method for fabricating a gate with dual gate dielectric layer as claimed in claim 2, wherein the conducting layer comprises a polysilicon layer or an epi-silicon layer.
4. The method for fabricating a gate with dual gate dielectric layer as claimed in claim 1, wherein the dielectric layer comprises a pad oxide layer.
5. The method for fabricating a gate with dual gate dielectric layer as claimed in claim 1, wherein the hard mask layer comprises a nitride layer.
6. The method for fabricating a gate with dual gate dielectric layer as claimed in claim 1, wherein the insulating layer comprises an oxide layer.
7. The method for fabricating a gate with dual gate dielectric layer as claimed in claim 1, wherein the method of anisotropic etching comprises a reactive ion etching or a plasma etching.
8. The method for fabricating a gate with dual gate dielectric layer as claimed in claim 1, wherein the method of planarizing comprises chemical mechanical polishing.
9. The method for fabricating a gate with dual gate dielectric layer as claimed in claim 1, wherein the ions are nitrogen ions.
10. A method for fabricating a gate with dual gate dielectric layer, comprising:
providing a semiconductor substrate, with a dielectric layer and a patterned hard mask layer with an opening sequentially formed thereon;
forming a spacer on a sidewall of the opening;
implanting ions into the semiconductor substrate using the spacer and the hard mask as a mask;
removing the spacer; and
forming a gate oxide layer on a bottom of the opening after removing the spacer, wherein the gate oxide layer has different thicknesses in the opening.
11. The method for fabricating a gate with dual gate dielectric layer as claimed in claim 10, wherein the gate oxide layer is formed by oxidizing the semiconductor substrate.
12. The method for fabricating a gate with dual gate dielectric layer as claimed in claim 11, wherein the step of implanting ions forms an ion implanted area in a first portion of the substrate in the opening and uncovered by the spacer.
13. The method for fabricating a gate with dual gate dielectric layer as claimed in claim 12, wherein a first portion of the gate oxide layer formed on the first portion of the substrate is thinner than a second portion of the gate oxide layer formed on a second portion of the substrate in the opening but outside of the first portion of the substrate.
14. The method for fabricating a gate with dual gate dielectric layer as claimed in claim 12, wherein ions in the ion implanted area retard oxidation on the first portion of the substrate such that a first portion of the gate oxide layer formed on the ion implanted area is thinner than a second portion of the substrate in the opening but outside of the ion implanted area.