1. A drive train of a purely electrically all-wheel drivable motor vehicle, comprising: a first axle which has first axle halves and a differential connecting the axle halves, a second axle which has axle halves and a differential connecting the second axle halves, and first and second electric machines for driving the two axles, the first electric machine being connected via a first gearing to the one of the first axle halves (7) of the first axle (2) and the second electric machine (20) being connected via a second gearing (25) to the second axle half (8) of the first axle (2), and the two differentials (6, 9) are connected via a shaft (13).
2. The drive train of claim 1, wherein the first axle is a rear axle of the motor vehicle.
3. The drive train of claim 2, wherein the two electric machines are arranged behind the rear axle of the motor vehicle.
4. The drive train of claim 1, wherein the drive train is a drive train of a sports car.
5. The drive train of claim 1, wherein the two electric machines are arranged transversely with respect to a direction of travel of the motor vehicle.
6. The drive train of claim 5, axes of rotation of rotors of the electric machines are identical.
7. The drive train of claim 1, wherein the respective gearing has a spur gear toothing, and the respective electric machine is connected via the spur gear toothing to the associated axle half of the first axle.
8. The drive train of claim 1 to, wherein the differential of the first axle andor the differential of the second axle has a crown wheel.
9. The drive train of claim 8, wherein the two crown wheels are connected to each other via the shaft, wherein the shaft (13) has, in the region of the outer ends, pinions that interact with the crown wheels.
10. The drive train of claim 1, wherein the shaft has a controllable clutch.
11. The drive train of claim 1, wherein the two gearings and the differential of the first axle have a common housing with two housing shells.
12. The drive train of claim 1, wherein the two axle halves of the first axle are mounted one in the other by needle bearings.
13. The drive train of claim 12, wherein the two axle halves of the first axle are mounted in regions of outer sides of the housing shells.
14. The drive train of claim 1, wherein the respective gearing, has an intermediate shaft between a driven shaft of the electric machine assigned to said gearing and the axle half assigned to the electric machine, of the first axle, and wherein the intermediate shafts of the two gearings are mounted one in the other by needle bearings.
15. The drive train of claim 14, wherein the two intermediate shafts are mounted in the gearing shells, in a region of outer sides thereof.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor structure comprising:
a semiconductor;
a dielectric layer covering the semiconductor; and
an electrode layer covering the dielectric layer, wherein
the electrode layer has an amorphous structure with a surface roughness of 1 nm or less and a resistivity of 1 m\u03a9cm formed by metal-organic chemical vapor deposition (MOCVD) method or atomic layer deposition (ALD) by using activated particles,
the semiconductor is arranged to stand on a substrate, and
the dielectric layer and the electrode layer cover at least one side face of the semiconductor.
2. The semiconductor structure according to claim 1, wherein a part of or the entirety of the electrode layer covers a side face standing inclined at from 70\xb0 to 90\xb0 to the substrate, and a ratio of the thickness of the electrode layer covering an upper portion of the side face to the thickness of the electrode layer covering a lower portion of the side face is in a range of 0.9 to 1.2.
3. The semiconductor structure according to claim 1, wherein the electrode layer is a Ru oxide.
4. The semiconductor structure according to claim 1, wherein resistivity of the electrode layer is between 70 \u03bc\u03a9cm and 1 m\u03a9cm.
5. The semiconductor structure according to any one of claims 1, 2, 3 and 4, wherein the semiconductor structure configures a memory device having a threshold voltage controlled by trapped electric charges at trap levels in the dielectric layer.
6. The semiconductor structure according to any one of claims 1, 2, 3 and 4, wherein the amorphous structure of the electrode layer contains from 0.001% to 5% of carbon.