1. A method comprising:
responding to a contact point created by a party committing fraud, the response including a set of details, the set of details including a set of false personal information.
2. The method of claim 1, comprising responding a plurality of times, each response including a different set of details.
3. The method of claim 1, wherein the contact point is an Internet address referring to a web site.
4. The method of claim 1, wherein the contact point is an e-mail address.
5. The method of claim 1, wherein responding comprises transmitting information at a speed designed to mimic a human entering data.
6. The method of claim 1, comprising setting the timing of the responses to resemble that of a set of users responding to a Phishing attack.
7. The method of claim 1, wherein each response includes a set of details that are internally consistent.
8. The method of claim 1, comprising creating a database including a set of false identities, each false identity including a set of data which is consistent within the set.
9. The method of claim 1, wherein each response includes a set of details consistent with an Internet service provider used to respond.
10. The method of claim 1, wherein the responding is in response to a Phishing attack.
11. The method of claim 1, wherein the responding is conducted using a plurality of Internet access points.
12. The method of claim 1, wherein the responding is conducted using a plurality of intermediate networks.
13. The method of claim 1, wherein the responding is conducted using a plurality of intermediate Internet service providers.
14. The method of claim 1, wherein the data in a response is marked, the method comprising monitoring an institution for the use of marked data in an attempted transaction.
15. The method of claim 1, wherein the number of responses is in proportion to a size of an attack in response to which the responses are sent.
16. The method of claim 1, wherein responding comprises entering data into a web-form.
17. The method of claim 1, comprising marking a response using a cryptographic algorithm, such that the marking is detectable only with a suitable cryptographic key.
18. The method of claim 1, wherein the details and the timing of the sending of the data mimic the behavior of automated client software.
19. A method comprising:
contacting a plurality of times a website and, with each contact, filling in a web-form with a set data, each set of data including a set of details, the set of details including a set of false personal information.
20. The method of claim 19, wherein filling in the web-form comprises transmitting information at a speed designed to mimic a human entering data.
21. The method of claim 19, comprising setting the timing of the contacting to resemble that of a set of unrelated users.
22. The method of claim 19, wherein each contact includes a set of details that are internally consistent.
23. The method of claim 19, comprising creating a database including a set of false identities, each false identity including a set of data which is consistent within the set.
24. a system comprising:
a controller to:
respond to a contact point created by a party committing fraud, the response including a set of details, the set of details including a set of false personal information.
25. The system of claim 24, wherein the contact point is an Internet address referring to a web site.
26. The system of claim 24, wherein the contact point is an e-mail address.
27. The system of claim 24, wherein responding comprises transmitting information at a speed designed to mimic a human entering data.
28. The system of claim 24, wherein the timing of the responses is to resemble that of a set of users responding to a Phishing attack.
29. The system of claim 24, wherein each response includes a set of details that are internally consistent.
30. The system of claim 24, comprising a database including a set of false identities, each false identity including a set of data which is consistent within the set.
31. The system of claim 24, wherein the responding is conducted using a plurality of intermediate networks.
32. A system comprising:
a controller to contact a plurality of times a website and, with each contact, enter a set of data, each set of data including a set of details, the set of details including a set of false personal information.
33. The system of claim 32, comprising a database including a set of false identities.
34. The system of claim 32, wherein entering the data comprises transmitting information at a speed designed to mimic a human entering data.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A method for producing insulator structures in a semiconductor substrate, comprising:
introducing insulator trenches into the semiconductor substrate from a substrate surface of the semiconductor substrate; and
partially filling the insulator trenches with a main layer made of an additive-doped insulator material in the course of an HDP deposition process based on a high density plasma,
wherein a barrier layer, which blocks an interaction of the additive with the semiconductor substrate, is produced before a deposition of the main layer in the course of the HDP deposition process.
2. The method of claim 1, wherein in the course of the HDP deposition process, before the deposition of the barrier layer, a predeposition process is controlled with exclusion of halogens or halogen compounds and an additional layer of the insulator structure is produced.
3. The method of claim 2, wherein the predeposition process of the additional layer, the production of the barrier layer and a main deposition process relating to the main layer are controlled successively and in a common process chamber.
4. The method of claim 3, wherein a halogen or a halogen compound is provided as the additive.
5. The method of claim 4, wherein fluorine or a fluorine compound is provided as the halogen.
6. The method of claim 5, wherein silicon oxide is provided as the insulator material.
7. The method of claim 6, wherein in the course of the HDP deposition process, after the production of the main layer, an auxiliary deposition process is controlled with exclusion of halogens or halogen compounds and a termination layer of the insulator structure is provided.
8. The method of claim 7, wherein material deposited above the substrate surface in the course of the HDP deposition process is caused to recede as far as the substrate surface.
9. The method of claim 8, wherein p-channel transistors are provided outside the insulator structures in the area of the substrate surface.
10. The method of claim 9, wherein silane and oxygen are supplied as chemical precursor compounds in the course of the predeposition process.
11. The method of claim 10, wherein silane, oxygen and NF3 are supplied as chemical precursor compounds in the course of the main deposition process.
12. The method of claim 11, wherein the material of the barrier layer is selected from a group comprising SiN, SiON, SiC, SiOC, amorphous silicon and nitrided silicon oxide.
13. The method of claim 11, wherein SiN is selected as the material of the barrier layer and silane and N2 are supplied as precursors for the production of the barrier layer.
14. The method of claim 11, wherein the insulator trenches are provided with an aspect ratio of greater than 5:1.
15. An insulator structure in a semiconductor substrate, comprising:
a main layer formed from halogen-doped silicon oxide and has emerged from an HDP deposition process; and
a barrier layer, which isolates the main layer from the semiconductor substrate and is formed in direct connection with the main layer by means of an HDP deposition process and blocks an interaction of the halogen with the semiconductor substrate.
16. The insulator structure of claim 15, further comprising:
an additional layer that isolates the barrier layer from the semiconductor substrate and is formed in direct connection with the barrier layer by means of an HDP deposition process.
17. The insulator structure of claim 16, wherein the additional layer is formed from undoped silicon oxide.
18. The insulator structure of claim 17, wherein the barrier layer comprises SiN, SiON, SiC, SiOC, amorphous silicon andor nitrided silicon oxide.
19. The insulator structure of claim 18, wherein the halogen is fluorine.
20. The insulator structure of claim 19, wherein the insulator structure is formed in an insulator trench with an aspect ratio of greater than 5:1.
21. The insulator structure of claim 20, further comprising a termination layer made of undoped silicon oxide, which is arranged on the main layer.