What is claimed is:
1. An apparatus for cleaning head of surface-contact memory card slot, comprising:
a base having a shape and dimensions similar to those of a general memory card; and
a sheeted cleaning element being spread and attached to an upper andor a lower side of a front portion of said base.
2. The apparatus for cleaning head of surface-contact memory card slot as claimed in claim 1, wherein said cleaning element is made of a paper-based material.
3. The apparatus for cleaning head of surface-contact memory card slot as claimed in claim 1, wherein said cleaning element is made of a cloth-based material.
4. The apparatus for cleaning head of surface-contact memory card slot as claimed in claim 1, wherein said cleaning element is made of a foamed material.
5. The apparatus for cleaning head of surface-contact memory card slot as claimed in claim 1, wherein said cleaning element is attached to the upper andor the lower side of the front portion of said base by means of a bonding material.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A plasma etching method of plasma etching a wide-gap semiconductor substrate placed on a platen arranged in a processing chamber using a plasma generated from a reactive etching gas, comprising;
a deposition step of forming a high speed etching film on a surface of the wide-gap semiconductor substrate, the high speed etching film comprising a component which is etched at a higher speed than a component of the wide-gap semiconductor substrate by reactive species generated by generating the plasma from the reactive etching gas,
a mask forming step of forming a mask having an opening on the high speed etching film formed on the surface of the wide-gap semiconductor substrate; and
an etching step of placing the wide-gap semiconductor substrate on the platen arranged in the processing chamber, heating the wide-gap semiconductor substrate to a temperature equal to or higher than 200\xb0 C., and supplying the reactive etching gas into the processing chamber to generate the plasma and applying a bias potential to the platen on which the wide-gap semiconductor substrate is placed, thereby etching, through the opening, the high speed etching film and the wide-gap semiconductor substrate by the plasma generated from the reactive etching gas.
2. The plasma etching method according to claim 1, in which the high speed etching film comprises at least one of titanium, titanium nitride, amorphous silicon, polysilicon, tungsten silicide and silicon nitride.
3. The plasma etching method according to claim 1, in which the wide-gap semiconductor substrate is a substrate comprising silicon carbide.
4. The plasma etching method according to claim 1, in which the reactive etching gas is a fluorine-containing gas.
5. The plasma etching method according to claim 1, in which the deposition step is performed by a vapor deposition, and the high speed etching film is deposited under a deposition condition which is set corresponding to an angle of a side wall surface to a bottom surface of an etching structure to be formed in the etching step.
6. The plasma etching method according to claim 5, in which the deposition condition includes at least one of a supply flow rate of a source gas for deposition supplied into a process chamber, a supply flow rate of a carrier gas supplied into the process chamber, a pressure inside the process chamber, and a power applied to electrode.
7. The plasma etching method according to claim 1, in which:
the high speed etching film comprises at least one of amorphous silicon, polysilicon, tungsten silicide and silicon nitride, and
the deposition step is performed by a vapor deposition, and the high speed etching film is deposited under a deposition condition which is set so that the high speed etching film has a predetermined refractive index.
8. The plasma etching method according to claim 7, in which the deposition condition includes at least one of a supply flow rate of a source gas for deposition supplied into a process chamber, a supply flow rate of a carrier gas supplied into the process chamber, a pressure inside the process chamber, and a power applied to electrode.
9. The plasma etching method according to claim 1, in which the deposition step is performed by a vapor deposition, and the high speed etching film is deposited so as to have a film thickness which is set corresponding to an angle of a side wall surface to a bottom surface of an etching structure to be formed in the etching step.