1. A scroll compressor comprising:
a first scroll member having a base and a generally spiral wrap extending from said base;
a second scroll member having a base and a generally spiral wrap extending from its base, said wraps of said first and second scroll members interfitting to define compression chambers;
a drive shaft for rotating about a drive axis, and causing said second scroll member to orbit relative to said first scroll member;
said first scroll member having a central discharge port extending through said base and into a discharge plenum;
a reed valve on said central discharge port, said reed valve having a valve portion at a first end and a pin holding said reed valve onto said base of said first scroll member at a second end, said reed valve extending along a plane which is non-perpendicular relative to said drive axis of said drive shaft such that said second end is further removed from said compression chambers than is said first end which covers said central discharge port;
said central discharge port extending along a port axis which is parallel to the drive axis, said reed valve being non-perpendicular to said port axis; and
there is at least one over-pressure discharge port spaced radially outwardly of a location of said central discharge port, and there being a second reed valve having a similar orientation as first reed valve covering said at least one over-pressure discharge port.
2. The scroll compressor as set forth in claim 1, wherein there are two of said over-pressure discharge ports spaced on opposed radial sides of said central discharge port and each receiving a reed valve with a similar orientation.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A light-emitting diode comprising:
a first semiconductor body, which comprises at least one active region which is electrically contact-connected, wherein electromagnetic radiation in a first wavelength range is generated in the active region during the operation of the light-emitting diode;
a second semiconductor body, which is fixed to the first semiconductor body a top side of the first semiconductor body, wherein the second semiconductor body has a re-emission region with a multiple quantum well structure, and wherein electromagnetic radiation in the first wavelength range is absorbed and electromagnetic radiation in a second wavelength range is re-emitted in the re-emission region during the operation of the light-emitting diode; and
a connecting material arranged between the first and second semiconductor body, wherein the connecting material mechanically connects the first and the second semiconductor body to one another.
2. The light-emitting diode according to claim 1, wherein the connecting material is electrically insulating.
3. The light-emitting diode according to claim 2, wherein the connecting material is silicone or contains a silicone.
4. The light-emitting diode according to claim 1, wherein the first semiconductor body has a multiplicity of coupling-out structures at its top side facing the second semiconductor body.
5. The light-emitting diode according to claim 4, wherein the connecting material encloses the coupling-out structures at their exposed outer areas.
6. The light-emitting diode according to claim 4, wherein the coupling-out structures consist of a material whose refractive index deviates by at most 30% from the refractive index of the first semiconductor body.
7. The light-emitting diode according to claim 1, wherein the second semiconductor body has a multiplicity of coupling-out structures at its top side remote from the first semiconductor body andor its underside facing the first semiconductor body.
8. The light-emitting diode according to claim 7, wherein the coupling-out structures consist of a material whose refractive index deviates by at most 30% from the refractive index of the second semiconductor body.
9. The light-emitting diode according to claim 4, wherein the coupling-out structures are formed with a material which is different from the material of the first semiconductor body and from the material of the second semiconductor body.
10. The light-emitting diode according to claim 9, wherein the material of the coupling-out structures contains or consists of one of the following substances: TiO2, ZnS, AlN, SiC, BN, Ta2O5.
11. The light-emitting diode according to claim 1, wherein a mirror layer is fixed to the first semiconductor body at the underside of the first semiconductor body remote from the second semiconductor body.
12. The light-emitting diode according to claim 1, wherein the first wavelength range comprises electromagnetic radiation from the wavelength range of UV radiation andor blue light.
13. The light-emitting diode according to claim 12, wherein the second wavelength range comprises electromagnetic radiation from the wavelength range of green light.
14. The light-emitting diode according claim 1, wherein the multiple quantum well structure of the re-emission region has at least 20 quantum well layers.
15. A light-emitting diode comprising:
a first semiconductor body, which comprises at least one active region which is electrically contact-connected, wherein electromagnetic radiation in a first wavelength range is generated in the active region during the operation of the light-emitting diode;
a second semiconductor body, which is fixed to the first semiconductor body at a top side of the first semiconductor body, wherein the second semiconductor body has a re-emission region with a multiple quantum well structure, and wherein electromagnetic radiation in the first wavelength range is absorbed and electromagnetic radiation in a second wavelength range is re-emitted in the re-emission region during the operation of the light-emitting diode; and
a connecting material arranged between the first and second semiconductor body, wherein the connecting material mechanically connects the first and the second semiconductor body to one another,
wherein the first semiconductor body has a multiplicity of coupling-out structures at its top side facing the second semiconductor body,
wherein the connecting material encloses the coupling-out structures at their exposed outer areas, and
wherein the coupling-out structures are formed with a material which is different from the material of the first semiconductor body and from the material of the second semiconductor body.
16. The light-emitting diode according claim 15, wherein the multiple quantum well structure of the re-emission region has at least 20 quantum well layers.
17. The light-emitting diode comprising:
a first semiconductor body, which comprises at least one active region which is electrically contact-connected, wherein electromagnetic radiation in a first wavelength range is generated in the active region during the operation of the light-emitting diode; and
a second semiconductor body, which is fixed to the first semiconductor body at a top side of the first semiconductor body, wherein the second semiconductor body has a re-emission region with a multiple quantum well structure, and wherein electromagnetic radiation in the first wavelength range is absorbed and electromagnetic radiation in a second wavelength range is re-emitted in the re-emission region during the operation of the light-emitting diode; and
wherein a connecting material arranged between the first and second semiconductor body, wherein the connecting material mechanically connects the first and the second semiconductor body to one another,
wherein the first wavelength range comprises electromagnetic radiation from the wavelength range of UV radiation andor blue light,
wherein the second wavelength range comprises electromagnetic radiation from the wavelength range of green light, and
the multiple quantum well structure of the re-emission region has at least 20 quantum well layers.