1. A plasma processing apparatus comprising:
a vacuum reactor composing a vacuum processing chamber for storing a sample;
a gas inlet for introducing a processing gas into the vacuum processing chamber;
a high frequency induction antenna disposed outside the vacuum processing chamber;
a magnetic field coil for forming a magnetic field in the vacuum processing chamber;
a high frequency power supply for generating plasma supplying a high frequency current to the high frequency induction antenna; and
a power supply for supplying power to the magnetic field coil, the high frequency power supply supplying high frequency current to the high frequency induction antenna for generating plasma from the gas supplied to the vacuum processing chamber to subject the sample to plasma processing;
wherein the high frequency induction antenna is divided into n (an integer of n\u22672) high frequency induction antenna elements, the divided respective high frequency induction antenna elements are arranged in tandem on a circle, high frequency current delayed sequentially by \u03bb (wavelength of high frequency power supply)n flows to the tandomly arranged high frequency induction antenna elements the current sequentially delayed in a clockwise direction with respect to a line of magnetic force of the magnetic field formed by supplying power to the magnetic field coil respectively, and an electric field rotating in a constant direction is formed to generate plasma for subjecting the sample to plasma processing.
2. The plasma processing apparatus according to claim 1, wherein
the high frequency induction antenna is divided into n (an integer of n\u22672) high frequency induction antenna elements, the divided respective high frequency induction antenna elements are arranged in tandem on a circle, delay means are disposed between the tandomly arranged high frequency induction antenna elements and the high frequency power supply, high frequency current delayed sequentially by \u03bb (wavelength of high frequency power supply)n flows to the respective high frequency induction antenna elements, and an electric field rotating in a constant direction is formed for subjecting the sample to plasma processing.
3. The plasma processing apparatus according to claim 1, wherein
the high frequency induction antenna is divided into n (an integer of n\u22672) high frequency induction antenna elements, the divided respective high frequency induction antenna elements are arranged in tandem on a circle, high frequency current delayed sequentially by \u03bb (wavelength of high frequency power supply)n in advance via n high frequency power supplies flows to the high frequency induction antenna elements arranged in tandem, and an electric field rotating in a constant direction is formed for subjecting the sample to plasma processing.
4. The plasma processing apparatus according to claim 1, wherein
the high frequency induction antenna is divided into m (m being a positive even number) high frequency induction antenna elements, the divided respective high frequency induction antenna elements are arranged in tandem on a circle, high frequency current delayed sequentially by \u03bb (wavelength of high frequency power supply)m in advance via m2 high frequency power supplies flows sequentially to the high frequency induction antenna elements starting from the first high frequency induction antenna element to the m2th high frequency induction antenna element,
high frequency currents having the same phases as those supplied to the first to m2th high frequency induction antenna elements to which the high frequency induction antenna elements are opposed to are flown sequentially to the high frequency induction antenna elements starting from the m2+1st high frequency induction antenna element to the mth high frequency induction antenna element, the high frequency induction antenna elements being arranged so that the directions of currents flowing through the high frequency induction antenna elements are reversed, and an electric field rotating in a constant direction is formed for subjecting the sample to plasma processing.
5. The plasma processing apparatus according to claim 1, wherein
the plurality of antennas and the magnetic field are arranged so that the induction electric field E formed by the plurality of antennas and the magnetic field B satisfy a relationship of E\xd7B\u22600.
6. The plasma processing apparatus according to claim 1, wherein
a rotational frequency of the rotating induction electric field E formed via the plurality of antennas is made to correspond to an electron cyclotron frequency via the magnetic field B.
7. The plasma processing apparatus according to claim 1, wherein
a variation frequency fB of the magnetic field B and a rotational frequency of Larmor motion (electron cyclotron frequency \u03c9c) satisfy a relationship of 2\u03c0fB<<\u03c9c.
8. A plasma generation apparatus comprising a vacuum processing chamber and a plurality of high frequency induction antennas through which high frequency flows disposed outside the vacuum processing chamber, wherein an induction electric field distribution formed in the vacuum processing chamber via the plurality of antennas is formed to rotate in a constant direction in a magnetic field having a finite value.
9. A plasma generation apparatus comprising a vacuum processing chamber and a plurality of high frequency induction antennas through which high frequency flows disposed outside the vacuum processing chamber, wherein the plurality of antennas are arranged axisymmetrically, a magnetic field is distributed axisymmetrically, the axis of the plurality of antennas and the axis of the magnetic field distribution correspond, and the induction electric field distribution formed in the vacuum processing chamber rotates in a constant direction.
10. The plasma generation apparatus according to claim 8 or claim 9, wherein
a direction of rotation of the induction electric field distribution rotating in the constant direction is clockwise with respect to a direction of a line of magnetic force of the magnetic field.
11. The plasma generation apparatus according to claim 8 or claim 9, wherein
the plurality of antennas and the magnetic field are arranged so that the induction electric field E formed via plurality of antennas and the magnetic field B satisfy a relationship of E\xd7B\u22600.
12. The plasma generation apparatus according to claim 8 or claim 9, wherein
a rotational frequency of the rotating induction electric field E formed via the plurality of antennas is made to correspond to an electron cyclotron frequency via the magnetic field B.
13. The plasma generation apparatus according to claim 8 or claim 9, wherein
a variation frequency f3 of the magnetic field B and a rotational frequency of Larmor motion (electron cyclotron frequency \u03c9c) satisfy a relationship of 2\u03c0fB<<\u03c9c.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. An equalizer arrangement for generating an output signal by equalizing an input signal, comprising:
at least two mutually interfering first equalizer sections; and
at least two correcting second equalizer sections, wherein each of said second equalizer sections is uniquely associated with an associated one of said first equalizer sections which has the same center frequency, and each of said first and second equalizer sections has an equalization response which at least partially compensates for interference between said first equalizer sections, wherein
each of said second equalizer sections at its center frequency has a gain that is equal to the negative sum of the gain of at least one of the plurality first equalizer sections adjacent to the first equalizer section associated with said associated second equalizer section.
2. The equalizer of claim 1, wherein the gain of one of said certain second equalizer sections is equal to the negative sum of the gains of the first equalizer sections that are immediately adjacent to said first equalizer section that is uniquely associated with said one of said certain section equalizer sections, wherein the gains are taken at the center frequency of said first equalizer section that is uniquely associated with said one of said certain section equalizer sections.
3. The equalizer of claim 1, wherein the gain of said one of said certain second equalizer sections is equal to the negative sum of the gains of the first equalizer sections that are adjacent to said first equalizer section that is uniquely associated with said one of said certain section equalizer sections, wherein the gains are taken at the center frequency of said first equalizer section that is uniquely associated with said one of said certain section equalizer sections.
4. The equalizer of claim 2, wherein said at least two mutually interfering first equalizer sections arranged in serial and upstream of said at least two correcting second equalizer sections, wherein said at least two correcting second equalizer sections are also arranged in serial.
5. The equalizer of claim 1, wherein said at least two mutually interfering first equalizer sections, and said at least two correcting second equalizer sections include discrete time domain filters.
6. The equalizer of claim 1, wherein said at least two mutually interfering first equalizer sections, and said at least two correcting second equalizer sections include continuous time domain filters.
7. An equalizer that receives an input signal, comprising:
a first equalizer, including a first equalizer section having a gain G1 that receives the input signal and provides a first equalizer output signal to a second equalizer section having a center frequency f2, wherein said second equalizer provides a second equalizer output signal to a third equalizer section having a gain G3 that provides a third equalizer output signal; and
a second equalizer having a first correcting equalizer section that receives a signal indicative of said third equalizer output signal and provides a first correcting equalizer output signal to a second correcting equalizer section that provides a second correcting equalizer output signal to a third correcting equalizer output section, which provides a third correcting equalizer output signal, wherein
said second correcting equalizer section includes a gain value that is indicative of the negative sum of the gains G1 and G3 associated with said first and third equalizer sections at the center frequency f2 of the second equalizer section.
8. The equalizer of claim 7, wherein each of said sections of said first and second equalizers each includes a bandpass filter.
9. An equalizer that receives an input signal, comprising:
a first equalizer, including a first equalizer section having a gain and that receives the input signal and provides a first equalizer output signal to a second equalizer section having a center frequency f2, wherein said second equalizer provides a second equalizer output signal; and
a second equalizer having a first correcting equalizer section that receives a signal indicative of said second equalizer output signal and provides a first correcting equalizer output signal to a second correcting equalizer section that provides a second correcting equalizer output signal, wherein
said second correcting equalizer section includes a correction gain value that is indicative of the negative the gain of said first equalizer section at the center frequency f2 of said second equalizer section.