What is claimed is:
1. A vehicle door lock apparatus for at least locking a door based on a signal transmitted from a portable transmitter, comprising:
a reception unit for receiving the signal from the portable transmitter;
a door openclosed state detection unit for detecting openclosed state of each of doors;
a first determination unit for determining as to whether or not a door on a driver’s seat side is closed when a door lock request is received from the transmitter, based on the signal received by the reception unit and a detection signal outputted from the door openclosed state detection unit; and
a lock unit for conducting door locking after all doors, are closed based on the signal outputted by the door openclosed state detection unit, when the door lock request is received and the first determination unit determines that the door on the driver’s seat side is closed.
2. The vehicle door lock apparatus according to claim 1,
wherein the first determination unit determines as to whether or not the door on the driver’s seat side is closed and another doors is open when the door lock request is received; and
wherein the lock unit conducts door locking after all doors are closed when the door lock request is received and the first determination unit determines that the door on the driver’s seat side is closed and another door is open.
3. The vehicle door lock apparatus according to claim 1, wherein the lock unit does not conduct door locking when the door lock request is not received by the time a predetermined time has elapsed since the door on the driver’s seat side is closed.
4. The vehicle door lock apparatus according to claim 1, wherein the lock unit does not conduct door locking when all doors are not closed by the time a predetermined time has elapsed since the first determination unit determines that the door on the driver’s seat side is closed upon reception of the door lock request.
5. The vehicle door lock apparatus according to claim 1, further comprising a first notification unit for giving a predetermined notification to user when the door lock request is received and the first determination unit determines that the door on the driver’s seat side is closed and another door is open.
6. The vehicle door lock apparatus according to claim 1, further comprising a second notification unit for notifying user that all doors are locked when the lock unit locks all doors of a vehicle.
7. The vehicle door lock apparatus according to claim 1, further comprising a third notification unit for giving a predetermined notification to user until a predetermined time period has elapsed when the door lock request is received and the first determination unit determines that the door on the driver’s seat side is closed and another’door is open.
8. The vehicle door lock apparatus according to claim 7, wherein termination of the predetermined time period is time when all doors of the vehicle is closed.
9. The vehicle door lock apparatus according to claim 7, wherein when the door lock request is received and the first determination unit determines that all doors are closed, the third notification unit does not give the predetermined notification.
10. The vehicle door lock apparatus according to claim 1,
wherein the lock unit has a second determination unit for determining as to whether or not a predetermined operation is performed after the first determination unit determines that the door on the driver’s seat side is closed when the door lock request is received;
wherein when the second determination unit determines that the predetermined operation is performed, the lock unit does not perform door locking.
11. The vehicle door lock apparatus according to claim 10, wherein the predetermined operation is to open the door on the driver’s seat side.
12. The vehicle door lock apparatus according to claim 10, wherein the predetermined operation is the door unlock request from the transmitter.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of manufacturing a semiconductor device, comprising the steps of:
forming a first semiconductor film comprising amorphous semiconductor over an insulating surface;
introducing a metallic element for promoting crystallization of the first semiconductor film comprising amorphous semiconductor into the first semiconductor film comprising amorphous semiconductor;
partially crystallizing the first semiconductor film by a heat treatment to form a second semiconductor film in which a crystal regions and amorphous regions are intermingled; and
performing a laser annealing to the second semiconductor film with a laser beam having a wave length from 360 to 650 nm in order for the crystal regions generated by the heat treatment to remain and for annealing mainly the amorphous regions.
2. A method of manufacturing a semiconductor device, comprising the steps of:
forming a first semiconductor film comprising amorphous semiconductor over an insulating surface;
introducing a metallic element for promoting crystallization of the first semiconductor film comprising amorphous semiconductor into the first semiconductor film comprising amorphous semiconductor;
partially crystallizing the first semiconductor film comprising amorphous semiconductor by a heat treatment to form a second semiconductor film in which crystal regions and amorphous regions are intermingled; and
irradiating a laser beam with a wave length from 360 to 650 nm to the second semiconductor film in which the crystal regions and the amorphous regions are intermingled to form a third semiconductor film comprising polycrystalline semiconductor with an improved crystallinity in order for the crystal regions generated by the heat treatment to remain and for annealing mainly the amorphous regions;
wherein an area of each of the amorphous regions in the second semiconductor film in which the crystal regions and the amorphous regions are intermingled is equal to or less than 10.0 \u03bcm2, and
wherein an area of at least one of the amorphous regions is equal to or greater than 0.30 \u03bcm2.
3. A method of manufacturing a semiconductor device according to claim 2, wherein the metallic element is one kind or plural kinds of elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, Al, In, Sn, Pb, P. As and Sb.
4. A method of manufacturing a semiconductor device according to claim 2, wherein the laser beam is one kind selected from the group consisting of a second harmonic of a YAG laser, a second harmonic of a glass laser, an Ar laser, a second harmonic of a YLF laser, and a second harmonic of a YVO4 laser.
5. A method of manufacturing a semiconductor device according to claim 2, wherein the semiconductor device is a liquid crystal display device or a light-emitting device.
6. A method of manufacturing a semiconductor device according to claim 2, wherein the semiconductor device is a portable telephone, a video camera, a digital camera, a projector, a goggle type display, a personal computer, a DVD player, an electronic book, or a portable information terminal.
7. A method of manufacturing a semiconductor device according to claim 2, wherein the laser beam has a wave length from 400 to 600 nm.
8. A method of manufacturing a semiconductor device, comprising the steps of:
forming a first semiconductor film comprising amorphous semiconductor over an insulating surface;
introducing a metallic element for promoting crystallization of the first semiconductor film comprising amorphous semiconductor into the first semiconductor film comprising amorphous semiconductor;
partially crystallizing the first semiconductor film comprising amorphous semiconductor by a heat treatment to form a second semiconductor film in which a crystal regions and amorphous regions are intermingled; and
performing a laser annealing to the second semiconductor film in which the crystal regions and the amorphous regions are intermingled with a laser beam having a wave length from 360 to 650 nm in order for the crystal regions generated by the heat treatment to remain and for annealing mainly the amorphous regions to form a third semiconductor film comprising polycrystalline semiconductor;
forming a gate insulating film over the third semiconductor film comprising polycrystalline semiconductor after the step of performing the laser annealing; and
forming a gate electrode over the gate insulating film.
9. A semiconductor device according to claim 8, wherein the metallic element is one kind or plural kinds of elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, Al, In, Sn, Pb, P, As and Sb.
10. A method of manufacturing a semiconductor device according to claim 8, wherein the laser beam is one kind selected from the group consisting of a second harmonic of a YAG laser, a second harmonic of a glass laser, an Ar laser, a second harmonic of a YLF laser, and a second harmonic of a YVO4 laser.
11. A method of manufacturing a semiconductor device according to claim 8, wherein the semiconductor device is a portable telephone, a video camera, a digital camera, a projector, a goggle type display, a personal computer, a DVD player, an electronic book, or a portable information terminal.
12. A method of manufacturing a semiconductor device according to claim 8, wherein the laser beam has a wave length from 400 to 600 nm.
13. A semiconductor device according to claim 8, wherein the semiconductor device is a liquid crystal display device or a light-emitting device.
14. A method of manufacturing a semiconductor device, comprising the steps of:
forming a first semiconductor film comprising amorphous semiconductor over an insulating surface;
introducing a metallic element for promoting crystallization of the first semiconductor film comprising amorphous semiconductor into the first semiconductor film comprising amorphous semiconductor;
partially crystallizing the first semiconductor film comprising amorphous semiconductor by a heat treatment to form a second semiconductor film in which crystal regions and amorphous regions are intermingled;
irradiating a laser beam with a wave length from 360 to 650 nm to the second semiconductor film in which the crystal regions and the amorphous regions are intermingled to form a third semiconductor film comprising a polycrystalline semiconductor with an improved crystallinity in order for the crystal regions generated by the heat treatment to remain and for annealing mainly the amorphous regions;
forming a gate insulating film over the third semiconductor film; and
forming a gate electrode over the gate insulating film,
wherein an area of each of the amorphous regions in the second semiconductor film in which the crystal regions and the amorphous regions are intermingled is equal to or less than 10.0 \u03bcm2, and
wherein an area of at least one of the amorphous regions is equal to or greater than 0.30 \u03bcm2.
15. A semiconductor device according to claim 14, wherein the metallic element is one kind or plural kinds of elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, Al, In, Sn, Pb, P, As and Sb.
16. A method of manufacturing a semiconductor device according to claim 14, wherein the laser beam is one kind selected from the group consisting of a second harmonic of a YAG laser, a second harmonic of a glass laser, an Ar laser, a second harmonic of a YLF laser, and a second harmonic of a YVO4 laser.
17. A method of manufacturing a semiconductor device according to claim 14, wherein the semiconductor device is a portable telephone, a video camera, a digital camera, a projector, a goggle type display, a personal computer, a DVD player, an electronic book, or a portable information terminal.
18. A method of manufacturing a semiconductor device according to claim 14, wherein the laser beam has a wave length from 400 to 600 nm.
19. A semiconductor device according to claim 14, wherein the semiconductor device is a liquid crystal display device or a light-emitting device.