1. A method for manufacturing a semiconductor device comprising:
forming a thin film transistor over a flexible substrate; and
forming an insulating film comprising resin over the thin film transistor.
2. A method for manufacturing a semiconductor device comprising:
forming a thin film transistor over a flexible substrate; and
forming an insulating film comprising silicon oxide over the thin film transistor,
wherein the insulating film is formed by applying a liquid.
3. A method for manufacturing a semiconductor device comprising:
performing a heat treatment on a flexible substrate;
forming a thin film transistor over the flexible substrate; and
forming an insulating film comprising resin over the thin film transistor.
4. A method for manufacturing a semiconductor device comprising:
performing a heat treatment on a flexible substrate;
forming a thin film transistor over the flexible substrate; and
forming an insulating film comprising silicon oxide over the thin film transistor,
wherein the insulating film is formed by applying a liquid.
5. A method for manufacturing a semiconductor device comprising:
forming a thin film transistor over a flexible substrate; and
forming an insulating film comprising resin over the thin film transistor,
wherein a semiconductor film comprising a crystalline. silicon of the thin film transistor is formed by a laser irradiation to an amorphous silicon or a microcrystalline silicon.
6. A method for manufacturing a semiconductor device comprising:
forming a thin film transistor over a flexible substrate; and
forming an insulating film comprising silicon oxide over the thin film transistor,
wherein the insulating film is formed by applying a liquid, and
wherein a semiconductor film comprising a crystalline silicon of the thin film transistor is formed by a laser irradiation to an amorphous silicon or a microcrystalline silicon.
7. A method for manufacturing a semiconductor device comprising:
forming a thin film transistor over a flexible substrate;
forming an insulating film comprising resin over the thin film transistor; and
forming a pixel electrode over the insulating film.
8. A method for manufacturing a semiconductor device comprising:
forming a thin film transistor over a flexible substrate;
forming an insulating film comprising silicon oxide over the thin film transistor; and
forming a pixel electrode over the insulating film,
wherein the insulating film is formed by applying a liquid.
9. A method for manufacturing a semiconductor device comprising:
forming a thin film transistor over a flexible substrate; and
forming an insulating film comprising resin over the thin film transistor,
wherein the thin film transistor is a coplanar type thin film transistor.
10. A method for manufacturing a semiconductor device comprising:
forming a thin film transistor over a flexible substrate; and
forming an insulating film comprising silicon oxide over the thin film transistor,
wherein the insulating film is formed by applying a liquid, and
wherein the thin film transistor is a coplanar type thin film transistor.
11. A method for manufacturing a semiconductor device comprising:
forming a thin film transistor over a flexible substrate; and
forming an insulating film comprising resin over the thin film transistor,
wherein the thin film transistor is an inverted stagger type thin film transistor.
12. A method for manufacturing a semiconductor device comprising:
forming a thin film transistor over a flexible substrate; and
forming an insulating film comprising silicon oxide over the thin film transistor,
wherein the insulating film is formed by applying a liquid, and
wherein the thin film transistor is an inverted stagger type thin film transistor.
13. A method for manufacturing a semiconductor device according to claim 3 or 4, wherein the heat treatment is performed above 200 \xb0 C.
14. A method for manufacturing a semiconductor device according to any one of claims 1-12, wherein the flexible substrate comprises at least one material selected from the group consisting of PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PES (polyethylene sulfite), and polyimide.
15. A method for manufacturing a semiconductor device according to claim 5 or 6, wherein a laser light irradiated in the laser irradiation is KrF excimer laser light or XeCI laser light.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for manufacturing of a powder mixture for a battery electrode comprising the following steps:
suspending of particles of at least one binder within an inert solvent in producing a first suspension wherein the at least one binder is not soluble or is very weakly soluble within the inert solvent;
slowly suspending of particles of an active material within said first suspension in producing a second suspension wherein the inert solvent is chemically inert with respect to the active material;
drying of said second suspension in producing a dry granulate material that is dry, free flowing and comprises a weak affinity to agglomeration wherein said at least one binder and said active material are configured to adhere during application of pressure when forming a battery electrode and wherein said inert solvent is not present during said application of pressure when forming said battery electrode.
2. The method according to claim 1, further comprising sieving said granulate material with a sieve with a predefined mesh width after said drying of said second suspension.
3. The method according to claim 1, further comprising suspending particles of at least one additive within the first suspension, between said producing said first suspension and said producing said second suspension.
4. The method according to claim 1, wherein said active material comprises a material for a cathode comprising a metal oxide or manganese dioxide or lithium cobalt oxide or lithium manganese spinel or lithium nickel cobalt oxide or silver vanadium oxide or a metal phosphate or copper oxyphosphate or iron phosphate or vanadium oxyphosphate or metal vanadate or copper vanadate or metal chromate or lead chromate.
5. The method according to claim 1, wherein said active material comprises a material for an anode comprising carbon or graphite or a meso-carbon composition or metal-oxide or lithium-titanium-oxide.
6. The method according to claim 1, wherein said at least one binder comprises polyvinylidendifluorid, polyethylene or polypropylene.
7. The method according to claim 1, further comprising an additive wherein said additive comprises carbon black, graphite, expanded graphite, carbon fibers, metals and porosity promoters, or ammonium-carbonate.
8. The method according to claim 1, wherein said solvent comprises alkanes, cycloalkanes, olefines, cyclic olefines, hexane, cyclohexane, heptane, octane, ethers or alcohols.