1. A computer program product stored in a computer readable storage device, comprising functional descriptive material that, when executed by an information handling system, causes the information handling system to perform actions comprising:
receiving a request from a first computer system at the information handling system, wherein the request includes a catalog identifier that identifies a message catalog file utilized by the first computer system to generate the request in a first language corresponding to a regional location of the first computer system;
determining, at the information handling system, that the catalog identifier does not correspond to a native message catalog file included on the information handling system, the native message catalog file corresponding to a second language that is different than the first language;
sending, from the information handling system, a catalog request to the first computer system that requests the message catalog file in response to determining that the catalog identifier does not correspond to the native message catalog file;
receiving the message catalog file from the first computer system in response to sending the catalog request; and
sending a response message to the first computer system using the received message catalog file.
2. The computer program product of claim 1 wherein:
the message catalog file includes information for the information handling system to generate the response message in the first language that corresponds to the regional location of the first computer system.
3. The computer program product of claim 2 wherein:
the information includes one or more message strings extracted by the information handling system that are written in the first language; and
the response message includes one or more of the extracted message strings.
4. The computer program product of claim 1 wherein the functional descriptive material, when executed by the information handling system, causes the information handling system to perform further actions comprising:
extracting the catalog identifier from the client request;
determining whether a log file includes the extracted catalog identifier; and
performing the sending of the catalog request in response to determining that the log file fails to include the extracted catalog identifier.
5. The computer program product of claim 4 wherein, in response to receiving the message catalog file, the functional descriptive material, when executed by the information handling system, causes the information handling system to perform further actions comprising:
updating the log file to include the catalog identifier; and
storing the message catalog file in a memory storage area.
6. An information handling system comprising:
one or more processors;
a memory accessible by at least one of the processors; a set of instructions stored in the memory and executed by at least one of the processors in order to perform actions of:
receiving a request from a first computer system at the information handling system, wherein the request includes a catalog identifier that identifies a message catalog file utilized by the first computer system to generate the request in a first language corresponding to a regional location of the first computer system;
determining at the information handling system based upon the catalog identifier, that the catalog identifier does not correspond to a native message catalog file included on the information handling system, the native message catalog file corresponding to a second language that is different than the first language;
sending a catalog request to the first computer system that requests the message catalog file in response to determining that the catalog identifier does not correspond to the native message catalog file;
receiving the message catalog file from the first computer system in response to sending the catalog request; and
sending a response message to the first computer system using the received message catalog file.
7. The information handling system of claim 6 wherein:
the message catalog file includes information for the information handling system to generate the response message in the first language that corresponds to the regional location of the first computer system.
8. The information handling system of claim 7 wherein:
the information includes one or more message strings extracted by the information handling system that are written in the first language; and
the response message includes one or more of the extracted message strings.
9. The information handling system of claim 6 wherein the set of instructions, when executed by one of the processors, further performs actions of:
extracting the catalog identifier from the client request;
determining whether a log file includes the extracted catalog identifier; and
performing the sending of the catalog request in response to determining that the log file fails to include the extracted catalog identifier.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for manufacturing a semiconductor, wherein crystal growth is carried out by using a wafer carrier having a spot facing part, comprising:
carrying out crystal growth by mounting the wafer at a bottom of the spot facing part, the spot facing part having a plurality of grooves formed therein to make a surface temperature of the wafer uniform by diffusing heat,
wherein a depth of the plurality of grooves formed at the spot facing part is deeper at a peripheral part of the wafer than at a central part of the wafer.
2. A method for manufacturing a semiconductor, wherein crystal growth is carried out by using a wafer carrier having a spot facing part, comprising:
carrying out crystal growth by mounting the wafer at a bottom of the spot facing part, the spot facing part having a plurality of grooves formed therein to make a surface temperature of the wafer uniform by diffusing heat,
wherein a density of the plurality of grooves formed at the spot facing part is higher at a peripheral part of the wafer than at a central part of the wafer.
3. A method for manufacturing a semiconductor, wherein crystal growth is carried out by using a wafer carrier having a spot facing part, comprising:
carrying out crystal growth by mounting the wafer on a spacer plate placed on the spot facing part, the spacer plate having a plurality of grooves formed therein to make a surface temperature of the wafer uniform by diffusing heat,
wherein a depth of the plurality of grooves formed in the spacer plate is deeper at a peripheral part of the wafer than at a central part of the wafer.
4. A method for manufacturing a semiconductor, wherein crystal growth is carried out by using a wafer carrier having a spot facing part, comprising:
carrying out crystal growth by mounting the wafer on a spacer plate placed on the spot facing part, the spacer plate having a plurality of grooves formed therein to make a surface temperature of the wafer uniform by diffusing heat,
wherein a density of the plurality of grooves formed in the spacer plate is higher at a peripheral part of the wafer than at a central part of the wafer.
5. A method for manufacturing a semiconductor, wherein crystal growth is carried out by using a wafer carrier having a spot facing part, comprising:
forming a plurality of grooves at a rear surface of the wafer, to make a surface temperature of the wafer uniform by diffusing heat; and
carrying out crystal growth by mounting the wafer having the plurality of grooves formed therein, on the spot facing part,
wherein a depth of the plurality of grooves formed in the rear surface of the wafer is deeper at a peripheral part of the wafer than at a central part of the wafer.
6. A method for manufacturing a semiconductor, wherein crystal growth is carried out by using a wafer carrier having a spot facing part, comprising:
forming a plurality of grooves at a rear surface of the wafer, to make a surface temperature of the wafer uniform by diffusing heat; and
carrying out crystal growth by mounting the wafer having the plurality of grooves formed therein, on the spot facing part,
wherein a density of the plurality of grooves formed in the rear surface of the wafer is higher at a peripheral part of the wafer than at a central part of the wafer.
7. A method for manufacturing a semiconductor according to claim 5, wherein the plurality of grooves are formed by using photolithography.
8. A method for manufacturing a semiconductor according to claim 5, wherein the plurality of grooves are formed by using etching.
9. A method for manufacturing a semiconductor according to claim 5, wherein the plurality of grooves are removed by carrying out polishing of the rear surface after the crystal growth.
10. A method for manufacturing a semiconductor, wherein crystal growth is carried out by using a wafer carrier having a spot facing part, comprising:
forming an insulating film on a rear surface of the wafer;
forming a plurality of grooves in the insulating film, to make a surface temperature of the wafer uniform by diffusing heat; and
carrying out crystal growth by mounting the wafer having the insulating film with the plurality of grooves formed therein, on the spot facing part.
11. A method for manufacturing a semiconductor according to claim 10, wherein a depth of the plurality of grooves formed in the insulating film is deeper at a peripheral part of the wafer than at a central part of the wafer.
12. A method for manufacturing a semiconductor according to claim 10, wherein a density of the plurality of grooves formed in the insulating film is higher at a peripheral part of the wafer than at a central part of the wafer.
13. A method for manufacturing a semiconductor according to claim 10, wherein the plurality of grooves are formed by using photolithography.
14. A method for manufacturing a semiconductor according to claim 10, wherein the plurality of grooves are formed by using etching.
15. A method for manufacturing a semiconductor according to claim 10, wherein the insulating film with the plurality of grooves formed therein is removed by etching after the crystal growth.
16. A method for manufacturing a semiconductor according to claim 10, wherein the insulating film is a silicon oxide film.
17. A method for manufacturing a semiconductor according to claim 6, wherein the plurality of grooves are formed by using photolithography.
18. A method for manufacturing a semiconductor according to claim 6, wherein the plurality of grooves are formed by using etching.
19. A method for manufacturing a semiconductor according to claim 6, wherein the plurality of grooves are removed by carrying out polishing of the rear surface after the crystal growth.