What is claimed is:
1. A composition comprising
(1) a ligand characterized by the following general formula:
52
wherein, E is selected from O, S, Se, Te; each R1 and R2 is independently selected from the group consisting of hydrogen, alkyl, substituted alkyl, cycloalkyl, substituted cycloalkyl, heteroalkyl, substituted heteroalkyl, heterocycloalkyl, substituted hetercycloalkyl, aryl, substituted aryl, heteroaryl, substituted heteroaryl, alkoxyl, aryloxyl, silyl, boryl, phosphino, amino, thio, seleno, and combinations thereof; X is any covalent bridging moiety provided that X is not a benzylic bridge where the benzylic carbon atom is bound to the NHR fragment and optionally, R1 andor R2 may joined together with X in a ring structure;
(2) a metal precursor compound characterized by the general formula M(L)n where M is a metal selected from Groups 3, 4 and the lanthanides; L is independently selected from the group consisting of halide, alkyl, substituted alkyl, cycloalkyl, substituted cycloalkyl, heteroalkyl, substituted heteroalkyl heterocycloalkyl, substituted heterocycloalkyl, aryl, substituted aryl, heteroaryl, substituted heteroaryl, alkoxy, aryloxy, hydroxy, boryl, silyl, amino, amine, hydrido, allyl, diene, seleno, phosphino, carboxylates, thio, 1,3-dionates, oxalates, carbonates, nitrates, sulphates, and combinations thereof; n is 1, 2, 3, 4, 5, 6, 7, 8, or 9; and
(3) optionally, at least one activator;
with the provisio that when M is zirconium, then the ligand is not a compound according to formula XVI:
53
wherein each Ra and Rb are each independently selected from the group consisting of alkyl, aryl, substituted aryl, heteroaryl, substituted heteroaryl and hydrogen; and Rc and Rd are each independently selected from the group consisting of alkyl, aryl and hydrogen.
2. The composition of claim 1, with the further proviso that M is not zirconium when R1 and X are joined together in a ring structure.
3. The composition of claim 1 in which the ligand is not a compound according to structure (IIa) or (IIb), where M is zirconium.
4. The composition of claim 1 in which the ligand is not a compound according to structure (IIa) or (IIb).
5. The composition of claim 1 in which the ligand is a compound according to formulae (III), (IV), (V), (VI), (VII), (VIII), (IX) (X) and (XI).
6. The composition of claim 5 in which the metal precursor is substantially pure with respect to the metal.
7. The composition of claim 6 in which the metal is hafnium.
8. A composition comprising a ligand characterized by formula (III), (IV), (V), (VI), (VII), (VIII), (IX), (X) or (XI);
a metal precursor compound characterized by the general formula M(L)n where M is hafnium; L is independently selected from the group consisting of halide, alkyl, substituted alkyl, cycloalkyl, substituted cycloalkyl, heteroalkyl, substituted heteroalkyl heterocycloalkyl, substituted heterocycloalkyl, aryl, substituted aryl, heteroaryl, substituted heteroaryl, alkoxy, aryloxy, hydroxy, boryl, silyl, amino, amine, hydrido, allyl, diene, seleno, phosphino, carboxylates, thio, 1,3-dionates, oxalates, carbonates, nitrates, sulphates, and combinations thereof; n is 1, 2, 3, 4, 5, 6, 7, 8, or 9; and
optionally, at least one activator.
9. The composition of claim 8 in which the metal precursor compound is about 90% or more pure with respect to the metal.
10. A metal ligand complex characterized by the following formula:
54
wherein, E is selected from O, S, Se, Te; each R1 and R2 is independently selected from the group consisting of hydrogen, alkyl, substituted alkyl, cycloalkyl, substituted cycloalkyl, heteroalkyl, substituted heteroalkyl, heterocycloalkyl, substituted hetercycloalkyl, aryl, substituted aryl, heteroaryl, substituted heteroaryl, alkoxyl, aryloxyl, silyl, boryl, phosphino, amino, thio, seleno, and combinations thereof; X is any covalent bridging moiety provided that X is not a benzylic bridge where the benzylic carbon atom is bound to the NHR2 fragment; and optionally, R1 andor R2 may joined together with X in a ring structure; M is a metal selected from Groups 3, 4 and the lanthanides; L is a ligand which is independently selected from the group consisting of halide, alkyl, substituted alkyl, cycloalkyl, substituted cycloalkyl, heteroalkyl, substituted heteroalkyl heterocycloalkyl, substituted heterocycloalkyl, aryl, substituted aryl, heteroaryl, substituted heteroaryl, alkoxy, aryloxy, hydroxy, boryl, silyl, amino, amine, hydrido, allyl, diene, seleno, phosphino, carboxylates, thio, 1,3-dionates, oxalates, carbonates, nitrates, sulphates, and combinations thereof; n is 1, 2, 3, 4, 5, 6; and when M is a Group 3 or lanthanide metal, y may be 1 or 2; and when M is a Group 4 metal, y may be 1, 2, or 3; provided that the metal ligand complex is not a complex according to formula (XXVII) in which M is zirconium.
11. The metal ligand complex of claim 10 with the proviso that when E is O and R1 and X are joined together in a non-aromatic ring structure, then M is other than zirconium.
12. The metal ligand complex of claim 10 with the proviso that when R1 and X are joined together in a ring structure, then M is other than zirconium.
13. The metal ligand complex of claim 10 which is not characterized by the formula (XVIII) where M is zirconium.
14. The metal ligand complex of claim 10 which is characterized by a formula selected from the group consisting of (XIX), (XX), (XXI), (XXX), (XXXI), (XXXII), (XXXIII), (XXXIV) and (XXXV).
15. The metal ligand complex of claim 10 which is substantially pure with respect to the metal.
16. The metal ligand complex of claim 15 in which the metal is hafnium.
17. A metal ligand complex which is characterized by either of the following formulae:
55
wherein, E is selected from O, S, Se, Te; each R1 and R2 is independently selected from the group consisting of hydrogen, alkyl, substituted alkyl, cycloalkyl, substituted cycloalkyl, heteroalkyl, substituted heteroalkyl, heterocycloalkyl, substituted hetercycloalkyl, aryl, substituted aryl, heteroaryl, substituted heteroaryl, alkoxyl, aryloxyl, silyl, boryl, phosphino, amino, thio, seleno, and combinations thereof; M is a metal selected from Groups 3, 4 and the lanthanides; and L is independently chosen from the group consisting of halide, alkyl, substituted alkyl, cycloalkyl, substituted cycloalkyl, heteroalkyl, substituted heteroalkyl heterocycloalkyl, substituted heterocycloalkyl, aryl, substituted aryl, heteroaryl, substituted heteroaryl, alkoxy, aryloxy, hydroxy, boryl, silyl, amino, hydrido, allyl, diene, seleno, phosphino, carboxylates, thio, 1,3-dionates, oxalates, carbonates, nitrates, sulphates, and combinations thereof; y is 1, 2 or 3; and n is 1, 2, 3, 4, 5, 6.
18. A metal ligand complex characterized by the following formula:
56
where M is hafnium; E is selected from the group consisting of O, S, Se, and Te; y is 1, 2 or 3; n is 1, 2, 3, 4, 5, 6; R2, R6 and R7 are each independently selected from the group consisting of hydrogen, alkyl, substituted alkyl, cycloalkyl, substituted cycloalkyl, heteroalkyl, substituted heteroalkyl, heterocycloalkyl, substituted hetercycloalkyl, aryl, substituted aryl, heteroaryl, substituted heteroaryl, alkoxyl, aryloxyl, silyl, boryl, phosphino, amino, thio, seleno, and combinations thereof; and each R8 is independently selected from the group alkyl, substituted alkyl, cycloalkyl, substituted cycloalkyl, heteroalkyl, substituted heteroalkyl, heterocycloalkyl, substituted hetercycloalkyl, aryl, substituted aryl, heteroaryl, substituted heteroaryl, alkoxyl, aryloxyl, silyl, boryl, phosphino, amino, thio, seleno, and combinations thereof.
19. The metal ligand complex of claim 18 characterized by the following formula:
57
wherein R17 is aryl or substituted aryl; R17 and R15 are independently hydrogen, alkyl, substituted alkyl or aryl; and M, L and n are as previously defined.
20. A metal ligand complex characterized by a formula selected from the group consisting of (XIX), (XX), (XXI), (XXX), (XXXI), (XXXII), (XXXIII), (XXXIV), and (XXXV) in which M is hafnium.
21 The metal ligand complex of claim 20 which is substantially pure with respect to the hafnium.
22. A polymerization reaction or process employing a composition according to claim 1.
23 A polymerization reaction or process employing a composition according to claim 2.
24. A polymerization reaction or process employing a composition according to claim 3.
25. A polymerization reaction or process employing a composition according to claim 4.
26. A polymerization reaction or process employing a composition according to claim 5.
27. A polymerization reaction or process employing a composition according to claim 6.
28. A polymerization reaction or process employing a composition according to claim 7.
29. A polymerization reaction or process employing a composition according to claim 8.
30. A polymerization reaction or process employing a composition according to claim 9.
31. A polymerization reaction or process employing a metal ligand complex according to claim 10.
32. A polymerization reaction or process employing a metal ligand complex according to claim 17.
33. A polymerization reaction or process employing a metal ligand complex according to claim 18.
34. A polymerization reaction or process employing a metal ligand complex according to claim 20.
35. A polymerization reaction or process employing a metal ligand complex according to claim 21.
36. The process of any one of claims 22-35 wherein the at least one activator comprises an ion forming activator and, optionally, a group 13 reagent.
37. The process of any of claims 22-35 wherein the at least one activator comprises an ion forming activator and, optionally, a divalent reagent.
38. The process of any one of claims 22-35 wherein the at least one activator comprises an ion forming activator and, optionally, an alkali metal reagent.
40. A process for catalytically polymerizing a monomer comprising subjecting the monomer to polymerization conditions in the presence of a catalyst composition, wherein said catalyst composition comprises a metal ligand complex according to any one of claims 1, 8, 16-18 and 20.
41. The process of claim 40 wherein said at least one monomer is an olefin, diolefin or acetylenically unsaturated compound.
42. A process for polymerizing a monomer, comprising providing a reactor, providing at least one monomer to said reactor and providing a composition or catalyst to said reactor, wherein said composition or catalyst is defined as in any one of claims 1, 8, 16-18 and 20 and subjecting said reactor contents to polymerization conditions.
43. The process of claim 42 wherein said at least one monomer is an olefin, diolefin or acetylenically unsaturated compound.
44. An array of compounds wherein each compound of the array is different from the other compounds of the array, and there are at least 8 compounds in the array, wherein each of the compounds is characterized by the general formula:
58
wherein, E is selected from O, S, Se, Te; each R1 and R2 is independently selected from the group consisting of hydrogen, alkyl, substituted alkyl, cycloalkyl, substituted cycloalkyl, heteroalkyl, substituted heteroalkyl, heterocycloalkyl, substituted hetercycloalkyl, aryl, substituted aryl, heteroaryl, substituted heteroaryl, alkoxyl, aryloxyl, silyl, boryl, phosphino, amino, thio, seleno, and combinations thereof; X is any covalent bridging moiety excluding a benzylic bridge where the benzylic carbon atom is bound to the NHR fragment; and optionally, R1 andor R2 may joined together with X in a ring structure.
45. The array of claim 44, wherein each compound additionally comprises a metal precursor M(L)n where M is a transition metal or main group metal or lanthanide metal and L is independently each occurrence selected from the group consisting of halide, alkyl, substituted alkyl, cycloalkyl, substituted cycloalkyl, heterocycloalkyl, substituted heterocycloalkyl, cyclopentadienyl, substituted cyclopentadienyl, aryl, substituted aryl, heteroaryl, substituted heteroaryl, alkoxy, aryloxy, hydroxy, boryl, silyl, hydride, thio, seleno, phosphino, amino, amine, carboxylates, 1,3-dionates, oxalates, carbonates, nitrates, sulfates, perchlorates, sulfonates phosphonates and combinations thereof; and n is an integer from 1-9.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An apparatus comprising:
an optical system having a processor coupled with a storage medium, the optical system further having
a trench formed in waveguides having a first sidewall and a second sidewall, the first and second sidewalls forming first and second angles with an optical signals propagation direction; and
a detector array coupled to the waveguides and a plurality of laser gain blocks, the detector array to provide wavelength stabilization for the waveguides, to provide power usage equalization of the plurality of laser gain blocks, to monitor power of optical signals, and to balance the power of the optical signals by increasing or decreasing each optical signal to achieve a desired power level.
2. The apparatus of claim 1, further comprising:
the waveguides formed in a semiconductor substrate to propagate an optical signal received at a first end of the waveguides; and
the detector array to receive the optical signal propagated in the waveguides through the first sidewall and reflected from a reflective surface formed on the second sidewall.
3. The apparatus of claim 1, wherein the detector array is positioned above the trench.
4. A method comprising:
forming a trench in waveguides having a first sidewall and a second sidewall, the first and second sidewalls forming first and second angles with an optical signals propagation direction; and
providing, via a detector array, wavelength stabilization for the waveguides, to provide power usage equalization of a plurality of laser gain blocks, to monitor power of optical signals, and to balance the power of the optical signals by increasing or decreasing each optical signal to achieve a desired power level, wherein the detector array is coupled to the waveguides and a plurality of laser gain blocks.
5. The method of claim 4, further comprising:
forming the waveguides in a semiconductor substrate to propagate an optical signal received at a first end of the waveguides; and
receiving, via the detector array, the optical signal propagated in the waveguides through the first sidewall and reflected from a reflective surface formed on the second sidewall.
6. The method of claim 4, further comprising positioning the detector array above the trench.
7. A machine-readable medium comprising instruction which, when executed, cause machine to:
form a trench in waveguides having a first sidewall and a second sidewall, the first and second sidewalls forming first and second angles with an optical signals propagation direction; and
provide, via a detector array, wavelength stabilization for the waveguides, to provide power usage equalization of a plurality of laser gain blocks, to monitor power of optical signals, and to balance the power of the optical signals by increasing or decreasing each optical signal to achieve a desired power level, wherein the detector array is coupled to the waveguides and a plurality of laser gain blocks.
8. The machine-readable medium of claim 7, wherein the instructions which, when executed, further cause the machine to:
form the waveguides in a semiconductor substrate to propagate an optical signal received at a first end of the waveguides; and
receive, via the detector array, the optical signal propagated in the waveguides through the first sidewall and reflected from a reflective surface formed on the second sidewall.
9. The machine-readable medium of claim 7, wherein the instructions which, when executed, further cause the machine to position the detector array above the trench.
10. An optical system comprising:
a trench formed in waveguides; and
a detector array coupled to the waveguides and a plurality of laser gain blocks, the detector array to provide wavelength stabilization for the waveguides, to provide power usage equalization of the plurality of laser gain blocks, to monitor power of optical signals, and to balance the power of the optical signals by increasing or decreasing each optical signal to achieve a desired power level.
11. The optical system of claim 10, wherein the waveguides include a first sidewall and a second sidewall, the first and second sidewalls forming first and second angles with an optical signals propagation direction.
12. The optical system of claim 10, further comprising:
the waveguides formed in a semiconductor substrate to propagate an optical signal received at a first end of the waveguides; and
the detector array to receive the optical signal propagated in the waveguides through the first sidewall and reflected from a reflective surface formed on the second sidewall.
13. The optical system of claim 10, wherein the detector array is positioned above the trench.