1. A mask pattern creation method comprising:
extracting a DSA pattern formation area in which a DSA material is directed self-assembled to form a DSA pattern, from a design pattern area of the design pattern based on the design pattern of an on-substrate pattern to be formed on a substrate and information on the DSA material that forms patterns using directed self-assembly;
creating a guide pattern that causes the DSA pattern to be formed in the DSA pattern formation area based on the design pattern, the information on the DSA material, the DSA pattern formation area, and a design constraint when forming the guide pattern; and
creating a mask pattern of the guide pattern using the guide pattern.
2. The mask pattern creation method according to claim 1, wherein
when creating the guide pattern,
a center-to-center distance between adjacent design patterns is extracted from design patterns in the DSA pattern formation area,
a center-to-center distance which is smaller than a prescribed value is extracted as an allowable distance,
design patterns adjacent within the allowable distance are set to belong to one group, whereby design patterns formed in the DSA pattern formation are grouped, and
the guide pattern is formed for each of the grouped design patterns.
3. The mask pattern creation method according to claim 1, further comprising:
predicting by simulation DSA patterns to be formed from the guide pattern and verifying whether the dimension of each of the predicted DSA patterns falls within an allowable range; and
when the dimension of the predicted DSA pattern is out of the allowable range, correcting the guide pattern so that the dimension of the DSA pattern falls within the allowable range.
4. The mask pattern creation method according to claim 1, further comprising:
creating a mask pattern used when removing an unnecessary DSA pattern which does not correspond to the design pattern among the DSA patterns based on the DSA patterns and the design patterns.
5. The mask pattern creation method according to claim 1, further comprising:
creating a mask pattern used when forming a design pattern which is not formed on the substrate by the DSA patterns among the design patterns based on the DSA patterns and the design patterns.
6. The mask pattern creation method according to claim 1, wherein
the information on the DSA material includes information on the length of DSA molecules that constitute the DSA material.
7. The mask pattern creation method according to claim 1, wherein
the information on the DSA material includes information on the type of DSA molecules that constitute the DSA material.
8. A non-transitory computer readable recording medium storing a mask pattern creation program for causing a computer to create mask patterns, the mask pattern creation program causing the computer to execute:
extracting a DSA pattern formation area in which a DSA material is directed self-assembled to form a DSA pattern, from a design pattern area of the design pattern based on the design pattern of an on-substrate pattern to be formed on a substrate and information on the DSA material that forms patterns using directed self-assembly;
creating a guide pattern that causes the DSA pattern to be formed in the DSA pattern formation area based on the design pattern, the information on the DSA material, the DSA pattern formation area, and a design constraint when forming the guide pattern; and
creating a mask pattern of the guide pattern using the guide pattern.
9. The non-transitory computer readable recording medium according to claim 8, wherein
when creating the guide pattern,
a center-to-center distance between adjacent design patterns is extracted from design patterns in the DSA pattern formation area,
a center-to-center distance which is smaller than a prescribed value is extracted as an allowable distance,
design patterns adjacent within the allowable distance are set to belong to one group, whereby design patterns formed in the DSA pattern formation are grouped, and
the guide pattern is formed for each of the grouped design patterns.
10. The non-transitory computer readable recording medium according to claim 8, further comprising:
predicting by simulation DSA patterns to be formed from the guide pattern and verifying whether the dimension of each of the predicted DSA patterns falls within an allowable range; and
when the dimension of the predicted DSA pattern is out of the allowable range, correcting the guide pattern so that the dimension of the DSA pattern falls within the allowable range.
11. The non-transitory computer readable recording medium according to claim 8, further comprising:
creating a mask pattern used when removing an unnecessary DSA pattern which does not correspond to the design pattern among the DSA patterns based on the DSA patterns and the design patterns.
12. The non-transitory computer readable recording medium according to claim 8, further comprising:
creating a mask pattern used when forming a design pattern which is not formed on the substrate by the DSA patterns among the design patterns based on the DSA patterns and the design patterns.
13. The non-transitory computer readable medium according to claim 8, wherein
the information on the DSA material includes information on the length of DSA molecules that constitute the DSA material.
14. The non-transitory computer readable recording medium according to claim 8, wherein
the information on the DSA material includes information on the type of DSA molecules that constitute the DSA material.
15. A semiconductor device manufacturing method comprising:
extracting a DSA pattern formation area in which a DSA material is directed self-assembled to form a DSA pattern, from a design pattern area of the design pattern based on the design pattern of an on-substrate pattern to be formed on a substrate and information on the DSA material that forms patterns using directed self-assembly;
creating a guide pattern that causes the DSA pattern to be formed in the DSA pattern formation area based on the design pattern, the information on the DSA material, the DSA pattern formation area, and a design constraint when forming the guide pattern;
creating a mask pattern of the guide pattern using the guide pattern;
producing a mask using the mask pattern; and
forming guide patterns as the on-substrate pattern on the substrate using the mask.
16. The semiconductor device manufacturing method according to claim 15, wherein
when creating the guide pattern,
a center-to-center distance between adjacent design patterns is extracted from design patterns in the DSA pattern formation area,
a center-to-center distance which is smaller than a prescribed value is extracted as an allowable distance,
design patterns adjacent within the allowable distance are set to belong to one group, whereby design patterns formed in the DSA pattern formation are grouped, and
the guide pattern is formed for each of the grouped design patterns.
17. The semiconductor device manufacturing method according to claim 15, further comprising:
predicting by simulation DSA patterns to be formed from the guide pattern and verifying whether the dimension of each of the predicted DSA patterns falls within an allowable range, and
when the dimension of the predicted DSA pattern is out of the allowable range, correcting the guide pattern so that the dimension of the DSA pattern falls within the allowable range.
18. The semiconductor device manufacturing method according to claim 15, further comprising:
creating a mask pattern used when removing an unnecessary DSA pattern which does not correspond to the design pattern among the DSA patterns based on the DSA patterns and the design patterns.
19. The semiconductor device manufacturing method according to claim 15, further comprising:
creating a mask pattern used when forming a design pattern which is not formed on the substrate by the DSA patterns among the design patterns based on the DSA patterns and the design patterns.
20. The semiconductor device manufacturing method according to claim 15, wherein
the information on the DSA material includes information on the length of DSA molecules that constitute the DSA material.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for measuring a pixel drive current of a TFT array comprising multiple pixels arranged in array form and an array drive signal line for supplying the pixel drive current to each of said multiple pixels and wherein the array drive current flowing to said array drive signal line comprises said pixel drive current component and an offset current component, said method comprising:
an array drive current measurement step wherein said array drive current when each of the pixels under test is driven is measured in succession for part or all of the pixels under test of said multiple pixels at a pre-determined time interval;
an offset current measurement step wherein said offset current component is measured when said array drive current measurement step is not executed;
an offset current calculation step wherein, when this array current of a pixel under test is being measured, said offset current is calculated from said results of measuring multiple offset currents; and
a pixel drive current calculation step wherein said pixel drive current of each of said multiple pixels is calculated from the difference between the measurement results of said array current measurement step and the calculation results of said offset current calculation step.
2. The method according to claim 1, wherein each of said pixels under test belong to a specific column or row in this TFT array.
3. The method according to claim 1, wherein said offset current measurement step is executed before the array drive current measurement step.
4. The method according to claim 1, wherein said offset current measurement step is executed after the array drive current measurement step.
5. The method according to claim 1, wherein said offset current is calculated in this offset current calculation step by linear interpolation from the measurement results of the offset current measured immediately before and immediately after the array current of the pixel under test is measured.
6. A device for measuring the drive current of a TFT array, said device comprising:
a pixel selection signal generator with which signals that select a specific pixel of a TFT array are generated;
a drive current supply unit with which the drive current is supplied to multiple pixels of this TFT array;
a measurement unit with which said drive current is measured when said pixels are not driven and said drive current is measured when said multiple pixels are being driven at a specific time interval; and
a data processor with which the drive current of these pixels is calculated from said drive current when said multiple pixels are not driven and said drive current when these pixels are driven.
7. The device for measuring the drive current of a TFT array according to claim 6, wherein the multiple pixels that are subjected to said measurement of the drive current when the pixels are being driven by said measurement unit are arranged linearly.