1. An inkjet printhead comprising:
a substrate having a first layer and a second layer;
a flexible element supported by the second layer and having an orifice defined therein;
an actuator for deflecting the flexible element; wherein,
the substrate has an opening formed through the first layer and a hole through the second layer such that the hole and the opening are in fluid communication with the orifice to eject ink by deflecting the flexible element.
2. An inkjet printhead according to claim 1 wherein the actuator has conductive material that generates heats in response to an electrical pulse, the conductive material being positioned such that the flexible element deflects from a differential in thermal expansion of the flexible element immediately adjacent the heater element and the flexible element remote from the heater element.
3. An inkjet printhead according to claim 1 wherein the substrate further comprises CMOS layers between the first layer and the second layer, the CMOS layers having circuitry for sending drive signals to the actuator, the CMOS layers also having holes in registration with the holes in the first layer for fluid communication with the opening in the second layer.
4. An inkjet printhead according to claim 1 wherein the flexible element is formed from material with a high coefficient of thermal expansion.
5. An inkjet printhead according to claim 4 wherein the flexible element fits within the opening in the second layer such that the second layer and the flexible element define an ink chamber, and the flexible element deflects towards the CMOS to eject ink through the orifice.
6. An inkjet printhead according to claim 5 wherein the flexible element further comprises cantilevered panels configured such that a free end of each cantilevered panel bends toward the CMOS layer to eject in through the orifice.
7. An inkjet printhead according to claim 6 wherein each of the cantilevered panels has sides and a free end that is spaced from other elements of the printhead by a gap that allows the respective panels to bend towards the CMOS layer without obstruction, the gap being sized in accordance with the ink properties such that surface tension avoids ink leakage through the gap.
8. An inkjet printhead according to claim 7 wherein the orifice is fixed relative to the substrate and the cantilevered panels are each fixed to the panels such that they extend radially outwards.
9. An inkjet printhead according to claim 8 wherein each of the cantilevered panels has an inner side that faces the ink chamber interior and an outer side facing away from the ink chamber interior such that heating the outer side of the panel relative to the inner side deflects it towards the CMOS layer.
10. An inkjet printhead according to claim 9 wherein the actuator has a conductor adjacent the outer side such that the conductor heats the outer side of the cantilevered panels via Joule heating in response to a drive pulse from the CMOS layer.
11. An inkjet printhead according to claim 10 wherein the conductor follows a serpentine path to distribute to heat more evenly across the respective outer sides of the cantilevered panels.
12. An inkjet printhead according to claim 11 wherein the conductor is embedded in the outer surface.
13. An inkjet printhead according to claim 12 wherein the cantilevered panels are formed from material with a high coefficient of thermal expansion relative to that of the first and second layers of the substrate.
14. An inkjet printhead according to claim 13 wherein the cantilevered panels are formed from polytetrafluoroethylene (PTFE).
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
We claim:
1. A method for manufacturing a semiconductor device, comprising:
forming an opening in an interlayer dielectric film formed on a semiconductor substrate.
forming a conductive coating over the interlayer dielectric film and covering said opening; and
gradually cooling the formed conductive coating.
2. The method of claim 1, wherein said opening is formed through the interlayer dielectric film.
3. The method of claim 1, wherein said conductive coating is made of material containing aluminum.
4. The method of claim 1, wherein the step of forming said conductive coating comprises:
forming a first conductive film on said interlayer dielectric film at a first temperature; and
forming a second conductive film on said first conductive film at a second temperature different than the first temperature.
5. The method of claim 4, wherein said conductive coating is made of material containing aluminum.
6. The method of claim 5, wherein said second temperature is higher in degree than the first temperature.
7. The method of claim 5, wherein said first temperature is 200 C. or lower.
8. The method of claim 7, wherein said second temperature is 300 C. or higher.
9. The method of claim 1 further comprising removing gasification components contained in said interlayer dielectric film after forming an opening in said interlayer dielectric film.
10. The method of claim 9, wherein said removal of gasification components comprises performance of heat treatment under reduced pressure at substrate temperatures.
11. The method of claim 10, wherein said substrate temperatures are between 300 and 550 C.
12. The method of claim 1, further comprising cooling the substrate to a third temperature prior to forming a conductive coating on the interlayer dielectric film.
13. The method of claim 12, wherein said third temperature is 100 C. or lower.
14. The method of claim 1, wherein the step of forming the conductive coating and the step of cooling the substrate are continuously performed.
15. The method of claim 14, wherein the step of forming the conductive coating and the step of cooling the substrate are continuously performed in an apparatus having a plurality of chambers that are maintained under a reduced pressure state.
16. A method for manufacturing a semiconductor device, comprising:
forming an opening in an interlayer dielectric film formed on a semiconductor substrate;
performing heat treatment under reduced pressure and at substrate temperature to remove gasification components contained in the interlayer dielectric film;
forming a conductive coating on surfaces of the interlayer dielectric film and the opening, wherein the step of forming the conductive coating comprises:
forming a first conductive film over said interlayer dielectric film at a first temperature; and
forming a second conductive film over said first conductive film at a second temperature that is higher than said first temperature;
gradually cooling the formed conductive coating;
wherein, said first and second conductive films are formed by a sputtering method.
17. The method of claim 16, wherein said conductive coating is made of material containing aluminum.
18. The method of claim 17, wherein said first and second conductive films are continuously formed in a same apparatus.
19. The method of claim 18 further comprising, forming a third conductive film over said first and second conductive films at a fourth temperature, after gradually cooling said first and second conductive films.
20. The method of claim 19, wherein said fourth temperature is lower than said first temperature.
21. The method of claim 20, wherein said forth temperature is approximately 100 C.
22. The method of claim 21, wherein said third conductive film is formed by a sputtering method over said first and second conductive films.
23. The method of claim 22, wherein said step of cooling said conductive coating and said step of forming said third conductive film on said conductive coating are continuously performed in a same apparatus.
24. A semiconductor device which is made by the method as recited in claim 1 or claim 16.
25. A method for manufacturing a semiconductor device, comprising the steps of:
(a) forming a through hole in an interlayer dielectric film formed on a semiconductor substrate having an element;
(b) forming a conductive film made of material containing aluminum on surfaces of the interlayer dielectric film and the through hole; and
(c) gradually cooling the conductive film.
26. A method according to claim 25, wherein the step (b) comprises a step (d) of forming a first film made of material containing aluminum at temperatures of 200 C. or lower, and a step (e) of forming, on the first film, a second film made of material containing aluminum at temperatures of 300 C. or higher.
27. A method for manufacturing a semiconductor device according to claim 25, further comprising a degasification step (f) wherein, after the step (a), heat treatment is performed under a reduced pressure at substrate temperatures of 300-550 C. to thereby remove gasification components contained in the interlayer dielectric film.
28. A method for manufacturing a semiconductor device according to claim 25, further comprising a step (g) of cooling the substrate to the temperatures of 100 C. or lower, before the step (b).
29. A method for manufacturing a semiconductor device according to claim 28, wherein the step (b) and the step (g) are continuously performed in a same apparatus having a plurality of chambers that are maintained under a reduced pressure state.
30. A method for manufacturing a semiconductor device according to claim 26, wherein, in the step (d) and in the step (e), the first and second films are formed by a sputtering method.
31. A method for manufacturing a semiconductor device according to claim 26, wherein, in the step (d) and the step (e), the first and second films made are continuously formed in a same chamber.
32. A method for manufacturing a semiconductor device according to a claim 25, further comprising, after the step (c), a step (h) of forming a third film made of material containing aluminum over the first and second films at temperatures ranging from normal temperature to 100 C.
33. A method for manufacturing a semiconductor device according to claim 32, wherein, in the step (h), the third film is formed by a sputtering method.
34. A method for manufacturing a semiconductor device according to claim 32, wherein the step (c) and the step (h) are continuously performed in a same chamber.