1. A method of forming a semiconductor device comprising:
forming a semiconductor layer over a substrate;
forming a gate insulating film over the semiconductor layer;
forming a first conductive film over the gate insulating film;
forming a second conductive film over the first conductive film;
forming a second layer of a gate electrode from the second conductive film;
adding an impurity element having one conductivity type to the semiconductor layer through the gate insulating film and the first conductive film after forming the second layer of the gate electrode;
forming a first layer of the gate electrode from the first conductive film so that a part of the first layer of the gate electrode extends beyond at least one of the side edges of the second layer of the gate electrode after adding the impurity element having one conductivity type to the semiconductor layer through the gate insulating film and the first conductive film; and
adding an impurity element having the one conductivity type to the semiconductor layer through the gate insulating film after forming the first layer of the gate electrode.
2. A method of forming a semiconductor device according to claim 1, wherein the second layer of the gate electrode is made of one kind or plural kinds of elements selected from the group consisting of titanium (Ti), tantalum (Ta), tungsten (W), and molybdenum (Mo), or a compound containing the element as its main ingredient.
3. A method of forming a semiconductor device according to claim 1, wherein the semiconductor device is one selected from the group consisting of a liquid crystal display device, an EL display device, and an image sensor.
4. A method of forming a semiconductor device according to claim 1, wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a projection TV, a goggle display, a car navigation system, a personal computer, and a portable information terminal.
5. A method of forming a semiconductor device according to claim 1, wherein the semiconductor layer is a crystalline semiconductor, a microcrystalline semiconductor, or a single crystal silicon layer.
6. A method of forming a semiconductor device according to claim 1, wherein the first layer of the gate electrode is made of one kind or plural kinds of elements selected from the group consisting of silicon (Si) and germanium (Ge), or a compound containing the element as its main ingredient.
7. A method of forming a semiconductor device comprising:
forming a semiconductor layer over a substrate;
forming a gate insulating film over the semiconductor layer;
forming a first conductive film over the gate insulating film;
forming a second conductive film over the first conductive film;
forming a second layer of a gate electrode from the second conductive film;
adding an impurity element having one conductivity type to the semiconductor layer through the gate insulating film and the first conductive film after forming the second layer of the gate electrode;
forming a first layer of the gate electrode from the first conductive film so that a part of the first layer of the gate electrode extends beyond at least one of the side edges of the second layer of the gate electrode after adding the impurity element having one conductivity type to the semiconductor layer through the gate insulating film and the first conductive film; and
adding an impurity element having the one conductivity type to the semiconductor layer through the gate insulating film after forming the first layer of the gate electrode; and
removing a part of the first layer of the gate electrode.
8. A method of forming a semiconductor device according to claim 7, wherein the first layer of the gate electrode is made of one kind or plural kinds of elements selected from the group consisting of silicon (Si) and germanium (Ge), or a compound containing the element as its main ingredient.
9. A method of forming a semiconductor device according to claim 7, wherein the second layer of the gate electrode is made of one kind or plural kinds of elements selected from the group consisting of titanium (Ti), tantalum (Ta), tungsten (W), and molybdenum (Mo), or a compound containing the element as its main ingredient.
10. A method of forming a semiconductor device according to claim 7, wherein the semiconductor device is one selected from the group consisting of a liquid crystal display device, an EL display device, and an image sensor.
11. A method of forming a semiconductor device according to claim 7, wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a projection TV, a goggle display, a car navigation system, a personal computer, and a portable information terminal.
12. A method of forming a semiconductor device according to claim 7, wherein the semiconductor layer is a crystalline semiconductor, a microcrystalline semiconductor, or a single crystal silicon layer.
13. A method of forming a semiconductor device comprising:
forming a first semiconductor layer and a second semiconductor layer over a substrate;
forming a gate insulating film over the first semiconductor layer and the second semiconductor layer;
forming a first conductive film over the gate insulating film;
forming a second conductive film over the first conductive film;
forming a second layer of a gate electrode from the second conductive film;
adding an impurity element having first conductivity type to at least the first semiconductor layer through the gate insulating film and the first conductive film after forming the second layer of the gate electrode;
adding an impurity element having second conductivity type opposite to the first conductivity type to the second semiconductor layer;
forming a first layer of the gate electrode from the first conductive film so that a part of the first layer of the gate electrode extends beyond at least one of the side edges of the second layer of the gate electrode after adding the impurity element having one conductivity type to the semiconductor layer through the gate insulating film and the first conductive film;
adding an impurity element having the first conductivity type to at least the first semiconductor layer through the gate insulating film after forming the first layer of the gate electrode.
14. A method of forming a semiconductor device according to claim 13, wherein the first layer of the gate electrode is made of one kind or plural kinds of elements selected from the group consisting of silicon (Si) and germanium (Ge), or a compound containing the element as its main ingredient.
15. A method of forming a semiconductor device according to claim 13, wherein the second layer of the gate electrode is made of one kind or plural kinds of elements selected from the group consisting of titanium (Ti), tantalum (Ta), tungsten (W), and molybdenum (Mo), or a compound containing the element as its main ingredient.
16. A method of forming a semiconductor device according to claim 13, wherein the semiconductor device is one selected from the group consisting of a liquid crystal display device, an EL display device, and an image sensor.
17. A method of forming a semiconductor device according to claim 13, wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a projection TV, a goggle display, a car navigation system, a personal computer, and a portable information terminal.
18. A method of forming a semiconductor device according to claim 13, wherein each of the first and second the semiconductor layers is a crystalline semiconductor, a microcrystalline semiconductor, or a single crystal silicon layer.
19. A method of forming a semiconductor device comprising:
forming a first semiconductor layer and a second semiconductor layer over a substrate;
forming a gate insulating film over the first semiconductor layer and the second semiconductor layer;
forming a first conductive film over the gate insulating film;
forming a second conductive film over the first conductive film;
forming a second layer of a gate electrode from the second conductive film;
adding an impurity element having first conductivity type to at least the first semiconductor layer through the gate insulating film and the first conductive film after forming the second layer of the gate electrode;
adding an impurity element having second conductivity type opposite to the first conductivity type to the second semiconductor layer;
forming a first layer of the gate electrode from the first conductive film so that a part of the first layer of the gate electrode extends beyond at least one of the side edges of the second layer of the gate electrode;
adding an impurity element having the first conductivity type to at least the first semiconductor layer through the gate insulating film after forming the first layer of the gate electrode; and
removing a part of the first layer of the gate electrode.
20. A method of forming a semiconductor device according to claim 19, wherein the first layer of the gate electrode is made of one kind or plural kinds of elements selected from the group consisting of silicon (Si) and germanium (Ge), or a compound containing the element as its main ingredient.
21. A method of forming a semiconductor device according to claim 19, wherein the second layer of the gate electrode is made of one kind or plural kinds of elements selected from the group consisting of titanium (Ti), tantalum (Ta), tungsten (W), and molybdenum (Mo), or a compound containing the element as its main ingredient.
22. A method of forming a semiconductor device according to claim 19, wherein the semiconductor device is one selected from the group consisting of a liquid crystal display device, an EL display device, and an image sensor.
23. A method of forming a semiconductor device according to claim 19, wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a projection TV, a goggle display, a car navigation system, a personal computer, and a portable information terminal.
24. A method of forming a semiconductor device according to claim 19, wherein each of the first and second the semiconductor layers is a crystalline semiconductor, a microcrystalline semiconductor, or a single crystal silicon layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A knee pad comprising:
a shaped cushion element having a concave interior in the form of a trough with a forward, upper side wall, a first lateral side wall for positioning against the outside of a knee, a second lateral side wall for positioning against the inside of a knee, an inside surface, and an open lower end, said inside surface including an insert receiving recess with a peripheral recess side wall sloping into the recess;
an insert positioned in the recess, said insert having a configuration substantially congruent with the configuration of the recess, said insert deformable in response to placement of a knee of an individual against the insert to displace portions of the insert toward the peripheral recess side wall of the recess to accommodate positioning of a knee against the insert, said recess having a vertical axis substantially midway between the first and second lateral side walls, said recess defining a greater volume for said insert intermediate the axis and the first lateral side wall of the cushion element relative to the volume of said recess for said insert intermediate the axis and the second lateral side wall.
2. The knee pad of claim 1 further including a flexible, elastic sheet positioned over the insert.
3. The knee pad of claim 1 further including at least a partial peripheral rib around upper wall and lateral side walls having a thickness greater, at least in part, than the adjacent portion of the said wall of the cushion element to define a deformable, elastic lip.
4. The knee pad of claim 1 farther including a shell element attachable to the cushion element.
5. A set of two knee pads configured respectively for the left knee and the right knee, said left knee pad including a recess having a greater volume on the left hand side of said vertical axis thereof and said right kneepad including a recess having a greater volume on the right hand side of the vertical axis thereof.
6. A knee pad comprising:
a shaped cushion element having a concave interior in the form of a trough with a forward, upper side wall, a first lateral side wall for positioning against the outside of a knee, a second lateral side wall for positioning against the inside of a knee, an inside surface, and an open lower end, said inside surface including an insert receiving recess with a peripheral recess side wall sloping into the recess;
an insert positioned in the recess, said insert having a configuration substantially congruent with the configuration of the recess, said insert deformable in response to placement of a knee of an individual against the insert to displace portions of the insert toward the peripheral recess side wall of the recess to accommodate positioning of a knee against the insert, said recess having a vertical axis substantially midway between the first and second lateral side walls, said recess defining a greater volume for said insert intermediate the axis and the first lateral side wall of the cushion element relative to the volume of said recess for insert intermediate the axis and the second lateral side wall; and
further including a flexible, elastic sheet positioned over said insert.