1. A dye composition comprising, in a medium that is suitable for dyeing keratin fibers:
at least one dye chosen from oxidation dye precursors and direct dyes;
at least one alkoxylated andor glycerolated nonionic surfactant;
at least one anionic surfactant;
at least one fatty alcohol;
at least one non-ethoxylated fatty acid ester of a C1-C10 monohydroxylated alcohol or a glycerol;
wherein the weight ratio of the total amount of fatty alcohols to the total amount of nonionic and anionic surfactants is greater than 0.5; and
wherein the dye composition comprises at least 55% water relative to the total weight of the dye composition.
2. A dye composition according to claim 1, wherein the dye composition comprises water in an amount of at least 60% by weight relative to the total weight of the dye composition.
3. A dye composition according to claim 1, wherein the at least one nonionic surfactant is chosen from:
oxyalkylenated or glycerolated fatty alcohols;
oxyalkylenated alkylphenols in which the alkyl chain has 8 to 18 carbon atoms;
oxyalkylenated or glycerolated fatty amides;
oxyalkylenated plant oils;
optionally oxyalkylenated fatty acid esters of sorbitan;
optionally oxyalkylenated fatty acid esters of sucrose;
fatty acid esters of polyethylene glycol;
(C6-C30)alkylpolyglycosides;
N\u2014(C6-C30)alkylglucamine derivatives;
amine oxides;
copolymers of ethylene oxide and of propylene oxide; and
mixtures thereof.
4. A dye composition according to claim 3, wherein said amine oxides are chosen from (C10-C14)alkylamine oxides and N-acylaminopropylmorpholine oxides.
5. A dye composition according to claim 1 wherein the at least one nonionic surfactant is chosen from oxyalkylenated and glycerolated fatty alcohols.
6. A dye composition according to claim 1, wherein the at least one nonionic surfactant is present in an amount ranging from 0.01% to 50% by weight relative to the total weight of the dye composition.
7. A dye composition according to claim 1, wherein the at least one anionic surfactant is chosen from:
(C6-C30)alkyl sulfates, (C6-C30)alkyl ether sulfates, (C6-C30)alkylamido ether sulfates, alkylaryl polyether sulfates, monoglyceride sulfates;
(C6-C30)alkylsulfonates, (C6-C30)alkylamide sulfonates, (C6-C30)alkylaryl sulfonates, \u03b1-olefin sulfonates, paraffin sulfonates;
(C6-C30)alkyl phosphates;
(C6-C30)alkyl sulfosuccinates, (C6-C30)alkyl ether sulfosuccinates, (C6-C30)alkylamide sulfosuccinates;
(C6-C30)alkyl sulfoacetates;
(C6-C24)acyl sarcosinates;
(C6-C24)acyl glutamates;
(C6-C30)alkylpolyglycoside carboxylic ethers; (C6-C30)alkylpolyglycoside sulfosuccinates;
(C6-C30)alkyl sulfosuccinamates;
(C6-C24)acyl isethionates;
N\u2014(C6-C24)acyl taurates;
fatty acid salts;
(C8-C20)acyl lactylates;
(C6-C30)alkyl-D-galactoside uronic acid salts;
polyoxyalkylenated(C6-C30)alkyl ether carboxylic acid salts, polyoxyalkylenated(C6-C30)alkylaryl ether carboxylic acid salts, polyoxyalkylenated(C6-C30)alkylamido ether carboxylic acid salts;
and mixtures thereof.
8. A dye composition according to claim 1, wherein the at least one anionic surfactant is present in an amount ranging from 0.01% to 50% by weight relative to the total weight of the dye composition.
9. A dye composition according to claim 1, wherein the at least one fatty alcohol is present in an amount ranging from 0.1% to 30% by weight relative to the total weight of the dye composition.
10. A dye composition according to claim 1, wherein the weight ratio of the total amount of fatty alcohols to the total amount of nonionic and anionic surfactants is greater than 0.75.
11. A dye composition according to claim 1, wherein the composition comprises at least one fatty substance other than the at least one fatty alcohol.
12. A dye composition according to claim 11, wherein the at least one fatty substance is chosen from non-oxyalkylenated, non-glycerolated fatty acid amides, carboxylic acid monoesters and polyesters, mineral oils and plant oils, and mixtures thereof.
13. A dye composition according to claim 1, wherein the at least one non-ethoxylated fatty acid ester of a C1-C10 alcohol is a monoester, diester or triester of a linear or branched, saturated or unsaturated C8-C30 carboxylic acid and of a linear or branched, saturated or unsaturated C1-C10 monohydroxylated alcohol or glycerol, with the exception of monoethylene, diethylene and triethylene glycol.
14. A dye composition according to claim 13, wherein the at least one fatty acid ester is chosen from the monoesters, diesters or triesters of oleic acid, lauric acid, palmitic acid, myristic acid, behenic acid, stearic acid, linoleic acid, linolenic acid, capric acid or arachidonic acid, and of methanol, ethanol, propanol, isopropanol, glycerol, octanol or decanol, and also mixtures thereof.
15. A dye composition according to claim 1, wherein the at least one non-ethoxylated fatty acid ester of a C1-C10 alcohol is present in an amount ranging from 0.1% to 20% by weight relative to the total weight of the dye composition.
16. A dye composition according to claim 1, wherein the at least one oxidation dye precursor is chosen from oxidation bases and couplers, and mixtures thereof.
17. A dye composition according to claim 16, wherein the composition comprises oxidation base(s) in an amount ranging from 0.0005% to 12% by weight relative to the total weight of the dye composition.
18. A dye composition according to claim 16, wherein the composition comprises coupler(s) in an amount ranging from 0.0001% to 15% by weight relative to the total weight of the dye composition.
19. A dye composition according to claim 1, wherein the at least one direct dye is present in an amount ranging from 0.0005% to 15% by weight relative to the total weight of the dye composition.
20. A dye composition according to claim 1, wherein the composition further comprises at least one basifying agent.
21. A dye composition according to claim 20, wherein the at least one basifying agent is chosen from aqueous ammonia, alkanolamines and combinations of C2-C10 alkanolamines with alkali metal or alkaline-earth metal silicates.
22. A dye composition according to claim 1, further comprising at least one cationic or amphoteric substantive polymer.
23. A dye composition according to claim 22, wherein the at least one cationic or amphoteric substantive polymer is present in an amount ranging from 0.01% to 10% by weight relative to the total weight of the dye composition.
24. A dye composition according to claim 1, further comprising at least one oxidizing agent.
25. A process for dyeing keratin fibers comprising
applying to wet or dry keratin fibers a dye composition comprising, in a medium that is suitable for dyeing keratin fibers:
at least one dye chosen from oxidation dye precursors and direct dyes;
at least one alkoxylated andor glycerolated nonionic surfactant;
at least one anionic surfactant;
at least one fatty alcohol;
at least one non-ethoxylated fatty acid ester of a C1-C10 monohydroxylated alcohol or a glycerol;
wherein the weight ratio of the total amount of fatty alcohols to the total amount of nonionic and anionic surfactants is greater than 0.5; and
wherein the dye composition comprises at least 55% water relative to the total weight of the dye composition.
26. A process for dyeing keratin fibers comprising
applying to wet or dry keratin fibers a dye composition, in the presence of at least one oxidizing composition, wherein said at least one oxidizing composition is applied simultaneously with or successively to the dye composition without intermediate rinsing,
leaving the mixture on the fibers, and
rinsing the fibers,
wherein the dye composition comprises, in a medium that is suitable for dyeing keratin fibers:
at least one dye chosen from oxidation dye precursors and direct dyes;
at least one alkoxylated andor glycerolated nonionic surfactant;
at least one anionic surfactant;
at least one fatty alcohol;
at least one non-ethoxylated fatty acid ester of a C1-C10 monohydroxylated alcohol or a glycerol;
wherein the weight ratio of the total amount of fatty alcohols to the total amount of nonionic and anionic surfactants is greater than 0.5; and
wherein the dye composition comprises at least 55% water relative to the total weight of the dye composition.
27. A process for dyeing keratin fibers, comprising applying to wet or dry keratin fibers, in the presence of at least one oxidizing composition, a dye composition, wherein said at least one oxidizing composition is mixed with the dye composition before application,
wherein said dye composition comprises, in a medium that is suitable for dyeing keratin fibers:
at least one dye chosen from oxidation dye precursors and direct dyes;
at least one alkoxylated andor glycerolated nonionic surfactant;
at least one anionic surfactant;
at least one fatty alcohol;
at least one non-ethoxylated fatty acid ester of a C1-C10 monohydroxylated alcohol or a glycerol;
wherein the weight ratio of the total amount of fatty alcohols to the total amount of nonionic and anionic surfactants is greater than 0.5; and
wherein the dye composition comprises at least 55% water relative to the total weight of the dye composition.
28. A multi-compartment device for dyeing keratin fibers comprising a first compartment comprising a dye composition comprising, in a medium that is suitable for dyeing keratin fibers:
at least one dye chosen from oxidation dye precursors and direct dyes;
at least one alkoxylated andor glycerolated nonionic surfactant;
at least one anionic surfactant;
at least one fatty alcohol;
at least one non-ethoxylated fatty acid ester of a C1-C10 monohydroxylated alcohol or a glycerol;
wherein the weight ratio of the total amount of fatty alcohols to the total amount of nonionic and anionic surfactants is greater than 0.5; and
wherein the dye composition comprises at least 55% water relative to the total weight of the dye composition,
and comprising a second compartment comprising an oxidizing composition.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of manufacturing a flash memory device, the method comprising:
providing a semiconductor substrate comprising a first region where a cell region is formed, a second region where a peripheral region is formed, and a third region formed in the peripheral region at the boundary portion of the cell region and the peripheral region;
performing a first ion implant process to form a triple well region in the semiconductor substrate of a predetermined region of the first region, wherein an end portion of the triple well region is also formed in the third region;
forming a gate oxide film for high voltage on the semiconductor substrate of the third region;
forming a pattern for defining an isolation film of the cell region in the first region and a predetermined region of the third region, and forming a first trench only in the first region through patterning using the pattern;
forming additional patterns for defining isolation films of the peripheral region in predetermined regions of the second and third regions, performing patterning through the additional patterns to form a second trench deeper than the first trench only in the second region, wherein in the patterning for forming the first and second trenches, a dummy active region is formed in the third region in which the patterning is prevented;
forming an insulating film for trench burial only within the first and second trenches, thus forming a first isolation film in the first region and a second isolation film, which is deeper than the first isolation film, in the second region;
forming a gate oxide film for low voltage on the entire surface except for the dummy active region after forming the first and second isolation films; and
forming a first polysilicon film for a floating gate electrode on the entire surface, patterning the first polysilicon film to form the floating gate electrode in the first region and a patterned polysilicon film in the third region, wherein the gate oxide film for high voltage and the patterned polysilicon film are stacked on the dummy active region.
2. The method as claimed in claim 1, wherein the triple well region includes a deep N well region, a P well region formed in a predetermined region of the deep N well region, and a N well region formed adjacent to the P well region.
3. The method as claimed in claim 2, wherein the P well region of the triple well region is located in the third region.
4. The method as claimed in claim 1, wherein the dummy active region is shifted about 0.1 to 0.5 \u03bcm toward the peripheral region at a boundary portion of the cell region and the peripheral region.
5. The method as claimed in claim 1, wherein the gate oxide film for high voltage is formed to a thickness of 360 to 440 \u212b.
6. The method as claimed in claim 1, wherein a well region for the peripheral region is formed within the semiconductor substrate of a predetermined region of the peripheral region.
7. The method as claimed in claim 6, further including the step of forming a field stop region within the semiconductor substrate of the peripheral region between the well region for the peripheral region and the triple well region of the cell region by performing a second ion implant process.
8. A method of manufacturing a flash memory device, the method comprising:
providing a semiconductor substrate comprising a first region where a cell region is formed, a second region where a peripheral region is formed, and a third region formed in the peripheral region at the boundary portion of the cell region and the peripheral region;
performing a first ion implant process to form a triple well region in the semiconductor substrate of a predetermined region of the first region, wherein an end portion of the triple well region is also formed in the third region;
forming a gate oxide film for high voltage on the semiconductor substrate of the third region;
forming a pattern for defining an isolation film of the cell region in the first region and a predetermined region of the third region, and forming a first trench only in the first region through patterning using the pattern;
forming additional patterns for defining isolation films of the peripheral region in predetermined regions of the second and third regions, performing patterning through the additional patterns to form a second trench deeper than the first trench only in the second region, wherein in the patterning for forming the first and second trenches, a dummy active region is formed in the third region in which the patterning is prevented;
forming a field stop well region within the semiconductor substrate of the peripheral region between the well region for the peripheral region and the triple well region of the cell region by performing a second ion implant process;
forming an insulating film for trench burial only within the first and second trenches, thus forming a first isolation film in the first region and a second isolation film, which is deeper than the first isolation film, in the second region;
forming a gate oxide film for low voltage on the entire surface except for the dummy active region; and
forming a first polysilicon film for a floating gate electrode on the entire surface, patterning the first polysilicon film to form the floating gate electrode in the first region and a patterned polysilicon film in the third region, wherein the gate oxide film for high voltage and the patterned polysilicon film are stacked on the dummy active region.
9. The method as claimed in claim 8, wherein the triple well region includes a deep N well region, a P well region formed in a predetermined region of the deep N well region, and a N well region formed adjacent to the P well region.
10. The method as claimed in claim 9, wherein the P well region of the triple well region is located in the third region.
11. The method as claimed in claim 8, wherein the dummy active region is shifted about 0.1 to 0.5 \u03bcm toward the peripheral region at a boundary portion of the cell region and the peripheral region.
12. The method as claimed in claim 8, wherein the gate oxide film for high voltage is formed to a thickness of 360 to 440 \u212b.
13. The method as claimed in claim 8, wherein a well region for the peripheral region is formed within the semiconductor substrate of a predetermined region of the peripheral region.